Abstract: A method of conditioning processing pads increases the removal rate of conductive material from a substrate surface during polishing. In this method, the direction of rotation of the processing pad relative to the conditioning disc during conditioning is opposite the direction of rotation of the processing pad relative to the substrate during polishing.

Abstract: A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, and biasing a second electrode disposed radially inward of the first electrode with a bias that is different than the bias applied to the first electrode. In one embodiment, the first electrode is coated with an inert material and in this way the same polish rate is obtained with a lower potential level applied to the first electrode.

Abstract: A method and apparatus for conditioning a conductive polishing material is described. In one embodiment, the pad dresser comprises a backing plate adapted to coupled to a conditioning head assembly, the backing plate comprising a rigid disk having a first side and an opposing second side, the second side having a perpendicular orientation to a centerline of the backing plate, and an annular member having a base portion adhered to the second side of the backing plate, wherein the annular member defines a conditioning surface opposite the second side that is radially sloped relative to a plane of the second side.

Abstract: Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In certain embodiments, a composition for processing a substrate having a conductive material layer disposed thereon is provided wherein the composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, an amount of a pH adjusting agent sufficient to provide a pH between about 3 and about 10, anionic polymer abrasive particles, and a solvent. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.

Abstract: A method for electrochemical mechanical polishing (ECMP) is disclosed. The polishing rate and surface finish of the layer on the wafer are improved by controlling the surface speed of both the platen and head, controlling the current applied to the pad, and preselecting the density of the perforations on the fully conductive polishing pad. ECMP produces much higher removal rates, good surface finishes, and good planarization efficiency at a lower down force. Generally, increasing the surface speed of both the platen and the head will increase the surface smoothness. Also, increasing the current density on the wafer will increase the surface smoothness. There is virtually no difference in the smoothness of the wafer surface between the center, middle, and edge of the wafer. For copper, removal rates of 10,000 ?/min and greater can be achieved.

Abstract: A method for determining a polishing endpoint includes obtaining spectra from different zones on a substrate during different times in a polishing sequence, matching the spectra with indexes in a library and using the indexes to determining a polishing rate for each of the different zones from the indexes. An adjusted polishing rate can be determined for one of the zones, which causes the substrate to have a desired profile when the polishing end time is reached.

Abstract: A method and apparatus for monitoring polishing pad conditioning mechanisms is provided. In one embodiment, a semiconductor substrate polishing system includes a rinse station, a polishing surface, a conditioning element, and a conditioning mechanism. The conditioning mechanism selectively positions the conditioning element over the polishing surface and over the rinse station. At least one sensor is provided and is configured to detect a first position and a second position of the conditioning element when disposed over the rinse station.

Abstract: The embodiments of the invention generally relate to a method and apparatus for processing a substrate where reduced defect formation is desired. Embodiments of the invention may be beneficially practiced in chemical mechanical polishing and electrochemical mechanical polishing processes, among other processes where reduction in defect formation due to foam formation is desired. In one embodiment, a processing system for planarizing a substrate is provided that includes a platen, a pad disposed on the platen, a carrier head configured to retain the substrate against the pad while contacting an electronically conductive processing solution; and a foam removal assembly. The foam removal assembly is configured to remove foam from the electrically conductive processing solution, wherein a gap exists between a surface of the electrically conductive processing solution and a bottom edge of the foam removal assembly.

Abstract: A method for electrochemically processing a substrate is provided. In one embodiment, the method includes performing a conditioning procedure on a processing pad having a plurality of process cells, energizing the process cells by applying a voltage to the conditioned processing pad, placing a substrate having at least a conductive layer disposed thereon on the energized pad, and removing at least a portion of the conductive layer in the energized process cells. In another embodiment, a method for polishing a substrate includes placing an unused conductive pad having a plurality of process cells on a platen of a processing system, breaking in the pad on the platen, energizing the process cells by applying a voltage to the broken-in pad, placing a substrate having at least a conductive layer disposed thereon on the energized pad, and removing at least a portion of the conductive layer in the energized cells.

Abstract: An apparatus and a method with fluid flow assist elements for electrochemical mechanical processing is provided in this invention. In one embodiment, the apparatus includes a first conductive layer having an upper surface adapted to contact a substrate, a second conductive layer disposed below the first conductive layer, an isolation layer disposed between the conductive layers, and a plurality of apertures, each having a first end formed through the first conductive layer and a second end formed through the second conductive layer, wherein the second ends of at least two apertures are laterally coupled by a channel.

Abstract: Methods and apparatus for voltage-mode current control. A computer implemented method includes: (a) commencing a ECMP polishing step on a conductive film of a substrate; (b) setting a current output voltage of a voltage source, the current output voltage being set in accordance with a recipe for the ECMP polishing step; (c) measuring current flow through the conductive film; (d) calculating, based on the measured current flow, a current polishing rate; (e) determining whether an adjustment to the current output voltage is needed, the determining being based on a target polishing rate; and (f) when an adjustment is determined to be needed, calculating and effecting the adjustment to the current output voltage.

Abstract: An article of manufacture and apparatus are provided for processing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive polishing surface. An electrode is disposed below the polishing surface having a dielectric material therebetween. A plurality of apertures may be formed in the polishing surface and the dielectric material to at least partially expose the electrode to the polishing surface. A membrane may be disposed between the electrode and the polishing surface that is permeable to ions and current to promote continuity between the electrode and the polishing surface.

Abstract: A method for conditioning an Ecmp pad is provided. In one embodiment, a method for electrochemically processing a substrate includes the steps of providing an electrical bias voltage between the top surface of the pad assembly and an electrode, and electrochemically removing contaminants from the top surface of the pad.

Abstract: A method and apparatus for monitoring polishing pad conditioning mechanisms is provided. In one embodiment, a semiconductor substrate polishing system includes a rinse station, a polishing surface, a conditioning element, and a conditioning mechanism. The conditioning mechanism selectively positions the conditioning element over the polishing surface and over the rinse station. At least one sensor is provided and is configured to detect a first position and a second position of the conditioning element when disposed over the rinse station.

Abstract: A method and apparatus for monitoring polishing pad conditioning mechanisms is provided. In one embodiment, a semiconductor substrate polishing system includes a rinse station, a polishing surface, a conditioning element, and a conditioning mechanism. The conditioning mechanism selectively positions the conditioning element over the polishing surface and over the rinse station. At least one sensor is provided and is configured to detect a first position and a second position of the conditioning element when disposed over the rinse station.

Abstract: Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.

Abstract: Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a leveler a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.

Abstract: Methods for polishing tungsten are provided. During ECMP, increasing the voltage to the pad is not always enough to increase the polishing rate. When polishing tungsten, simply increasing the applied voltage will, in some cases, actually decrease the removal rate. By increasing the down force pressure between the polishing pad and the substrate, the applied voltage, and the rotation speed of the substrate and the polishing pad, the tungsten removal rate will also increase.

Abstract: Embodiments of the present invention generally relate to an apparatus for processing a substrate and more specifically to a device that will transfer electrical power and/or control signals between a stationary base and a rotating platen without involving mechanical contact. The device does not suffer the drawbacks of conventional slip rings burdened with moving surfaces. In one embodiment, an apparatus for processing a substrate is provided. The apparatus includes a platen assembly having a surface for supporting a planarizing material and disposed on a stationary base so that the platen assembly may rotate relative to the base. The apparatus further includes a coupling assembly for transferring electrical energy from a primary coil to a secondary coil. The coupling assembly includes the primary coil of wire wrapped around a first core; the first core coupled to the base; the secondary coil of wire wrapped around a second core; and the second core coupled to the platen assembly.

Abstract: An apparatus and method for manufacturing and refurbishing a conductive polishing pad assembly for performing an electrochemical process on a substrate is disclosed. The conductive polishing pad assembly is formed using a contact surface as a foundation that is coated with a metallic coating to create a conductive contact surface. In one embodiment, the metallic coating is a high purity tin/zinc alloy that is sprayed on the contact surface. The contact surface contains abrasive particles while the metallic coating provides at least conductive qualities to the contact surface.