Abstract: An ammonia slip control catalyst having a layer containing perovskite and a separate layer containing an SCR catalyst is described. The ammonia slip catalyst can have two stacked layers, with the top overlayer containing an SCR catalyst, and the bottom layer containing a perovskite. The ammonia slip catalyst can alternatively be arranged in sequential layers, with the SCR catalyst being upstream in the flow of exhaust gas relative to the perovskite. A system comprising the ammonia slip catalyst upstream of a PGM-containing ammonia oxidation catalyst and methods of using the system are described. The system allows for high ammonia oxidation with good nitrogen selectivity. Methods of making and using the ammonia slip catalyst to reduce ammonia slip and selectively convert ammonia to N2 are described.

Abstract: A three-way catalyst is disclosed. The three-way catalyst comprises a silver-containing extruded zeolite substrate and a catalyst layer disposed on the silver-containing extruded zeolite substrate. The catalyst layer comprises a supported platinum group metal catalyst comprising one or more platinum group metals and one or more inorganic oxide carriers. The invention also includes an exhaust system comprising the three-way catalyst. The three-way catalyst results in improved hydrocarbon storage and conversion, in particular during the cold start period.

Abstract: A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer.

Abstract: A method for fabricating a semiconductor component includes forming an interlayer dielectric (ILD) layer on a substrate, forming a trench in the interlayer dielectric layer, forming a metal gate in the trench, removing a portion of the metal gate protruding from the ILD layer, reacting a reducing gas with the metal gate, and removing a top portion of the metal gate.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The dielectric layer has a trench passing through the dielectric layer. The method includes forming a gate stack in the trench. The method includes performing a hydrogen-containing plasma process over the gate stack. The method includes removing a top portion of the gate stack to form a first recess surrounded by the gate stack and the dielectric layer. The method includes forming a cap layer in the first recess to fill the first recess.

Abstract: A semiconductor device includes a first substrate including a surface, and a pad array on the surface of the substrate, wherein the pad array comprises a first type pad and a second type pad located on a same level. The semiconductor device further includes a conductive bump connecting either the first type pad or the second type pad to a second substrate and a via connected a conductive feature at a different level to the first type pad and the via located within a projection area of the first type pad and directly contacting the first type pad. The semiconductor device also has a dielectric in the substrate and directly contacting the second type pad, wherein the second type pad is floated on the dielectric.

Abstract: A three-way catalyst is disclosed. The three-way catalyst comprises a palladium component comprising palladium and a ceria-zirconia-alumina mixed or composite oxide, and also comprises a rhodium component comprising rhodium and a zirconia-containing material. The palladium component and the rhodium component are coated onto a silver-containing extruded molecular sieve substrate. The invention also includes an exhaust system comprising the three-way catalyst. The three-way catalyst results in improved hydrocarbon storage and conversion, in particular during the cold start period.

Abstract: The present invention provides a direct sampler and detector for analytes found in exhaled breath condensate. Analytes in the breath condensate are detected instantaneously as they condense prior to reaching the sensor surface or condense directly on the sensor surface. Because the analysis or assay is performed immediately after patient exhalation, analyte stability is significantly improved providing accurate, reliable, consistent, and clinically applicable results. In certain embodiments, combined breath condensate/breath samplers and detectors are provided, enabling multiplexed analysis of condensed and vapor-phase analytes provided in a single sampling session. Breath is collected and directed to one or more subsystems. Within each subsystem, the breath portion is either condensed or prevented from condensing.

Abstract: Embodiments of nanoelectronic sensors are described, including sensors for detecting analytes such ammonia. An environmental control system employing nanoelectronic sensors is described. A personnel safety system configured as a disposable badge employing nanoelectronic sensors is described. A method of dynamic sampling and exposure of a sensor providing a number of operational advantages is described.

Abstract: Sensors and detection systems suitable for measuring analytes, such as biomolecule, organic and inorganic species, including environmentally and medically relevant volatiles and gases, such as NO, NO2, CO2, NH3, H2, CO and the like, are provided. Certain embodiments of nanostructured sensor systems are configured for measurement of medically important gases in breath. Applications include the measurement of endogenous nitric oxide (NO) in breath, such as for the monitoring or diagnosis of asthma and other pulmonary conditions.

Abstract: An ammonia slip control catalyst having a layer containing perovskite and a separate layer containing an SCR catalyst is described. The ammonia slip catalyst can have two stacked layers, with the top overlayer containing an SCR catalyst, and the bottom layer containing a perovskite. The ammonia slip catalyst can alternatively be arranged in sequential layers, with the SCR catalyst being upstream in the flow of exhaust gas relative to the perovskite. A system comprising the ammonia slip catalyst upstream of a PGM-containing ammonia oxidation catalyst and methods of using the system are described. The system allows for high ammonia oxidation with good nitrogen selectivity. Methods of making and using the ammonia slip catalyst to reduce ammonia slip and selectively convert ammonia to N2 are described.

Abstract: A hardware-capability update method for a portable device with at least first and second SIM cards is provided. The method includes detecting whether a hardware capability for a first SIM card has to be responded to a requesting terminal; determining whether the hardware capability for the first SIM card can be responded immediately; transmitting the information about hardware capability to the requesting terminal when the hardware capability for the first SIM card can be responded immediately; and storing the information about pending updated hardware capability when the hardware capability for the first SIM card cannot be responded immediately.

Abstract: A hardware-capability update method for a portable device with at least first and second SIM cards is provided. The method includes detecting whether a hardware capability for a first SIM card has to be responded to a requesting terminal; determining whether the hardware capability for the first SIM card can be responded immediately; transmitting the information about hardware capability to the requesting terminal when the hardware capability for the first SIM card can be responded immediately; and storing the information about pending updated hardware capability when the hardware capability for the first SIM card cannot be responded immediately.

Abstract: Embodiments of nanoelectronic sensors are described, including sensors for detecting analytes inorganic gases, organic vapors, biomolecules, viruses and the like. A number of embodiments of capacitive sensors having alternative architectures are described. Particular examples include integrated cell membranes and membrane-like structures in nanoelectronic sensors.

Abstract: A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer.

Abstract: A semiconductor device includes a first substrate including a surface, and a pad array on the surface of the substrate, wherein the pad array comprises a first type pad and a second type pad located on a same level. The semiconductor device further includes a conductive bump connecting either the first type pad or the second type pad to a second substrate and a via connected a conductive feature at a different level to the first type pad and the via located within a projection area of the first type pad and directly contacting the first type pad. The semiconductor device also has a dielectric in the substrate and directly contacting the second type pad, wherein the second type pad is floated on the dielectric.

Abstract: A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer.

Abstract: A three-way catalyst is disclosed. The three-way catalyst comprises a silver-containing extruded zeolite substrate and a catalyst layer disposed on the silver-containing extruded zeolite substrate. The catalyst layer comprises a supported platinum group metal catalyst comprising one or more platinum group metals and one or more inorganic oxide carriers. The invention also includes an exhaust system comprising the three-way catalyst. The three-way catalyst results in improved hydrocarbon storage and conversion, in particular during the cold start period.

Abstract: Provided herein is a new hybrid material system, mCNT, including magnetic carbon nanotubes for biological and medical sensing applications. In certain embodiments, the systems include magnetic material on the interior of carbon nanotubes (CNTs). The amount of magnetic particles inside CNTs may be such that mCNT can respond to small, low cost, portable magnet. The exterior CNT surface is kept intact for biomolecular attachments or other functionalizations. Performance enhancement with this novel material includes improved sensitivity, reduced response time, and reduced sample volume. According to various embodiments, the mCNTs are substrates for the adherence of molecules participating in these assays or as active sensing elements. Also provided are methods of fabricating two-dimensional mCNT and CNT networks on printed electrodes.

Abstract: A light source sensing device and a light source sensing method thereof are provided. The light source sensing device includes an optical sensor, a rod, a motor and a controller. The optical sensor is used for sensing lighting brightness emitted by the light source. The rod is disposed on a circular track which surrounds the optical sensor. When the light source irradiates the rod, a shadow is formed on a sensing surface of the optical sensor. The motor drives the rod to move along the circular track in a moving speed. The controller is coupled to the motor and the optical sensor, and controls the optical sensor to sample in a sampling frequency during a sampling period for obtaining a plurality of brightness values. The controller calculates and processes the brightness values for obtaining an irradiating angle of the light source.