Abstract: A solar cell device includes a light-transmissive substrate, a solar cell module, an optical composite film assembly, and a light-transmissive top plate. The solar cell module is disposed on the light-transmissive substrate and includes a solar cell unit. The optical composite film assembly is light-transmissive, and includes a light diffusion layer and a fiber layer. The optical composite film assembly and the solar cell module are disposed on each other. The light-transmissive top plate is disposed spaced apart from the light-transmissive substrate and cooperates with the light-transmissive substrate to sandwich the solar cell module and the optical composite film assembly.

Abstract: A system includes a lighting module, a processing module, and photovoltaic units. Each of the photovoltaic units receives light reflected off a body portion which is illuminated by light from the lighting module, and converts light energy of the reflected light into electricity. The processing module stores modes each of which specifies a code set. When one of the modes is selected, the processing module activates the lighting module to emit light based on the code set specified by the mode thus selected. The processing module converts electrical quantities measured individually for the photovoltaic units into respective code parameters, and composes an identification code using the code parameters.

Abstract: A composite material and a foam prepared from the composite material are provided. The composite material includes a network polymer, a fluorine-containing polymer fiber, and a reinforcement fiber. The polymer network is a crosslinking reaction product of a polymer and an oligomer, wherein the polymer is polyamide, polyester, polyurethane, or a combination thereof, and the oligomer is a vinyl aromatic-co-acrylate oligomer with an epoxy functional group. The oligomer has a weight percentage of 1% to 10%, based on the weight of the network polymer. The ratio of the weight of the reinforcement fiber to the total weight of the network polymer and the fluorine-containing polymer fiber is from 1:9 to 4:6.

Abstract: A branched polymer, a preparation method thereof and a method for preparing a foam are provided. The branched polymer is a transesterification product of a composition, and the composition includes 100 parts by weight of polyethylene terephthalate and 0.5-2.0 parts by weight of polyol. The branched polymer has an inherent viscosity of from 1.2 dL/g to 1.6 dL/g, a number average molecular weight of from 75,000 g/mol to 90,000 g/mol, a polydispersity index from 3.0 to 6.0, a melt index from 0.8 g/10 min to 7.5 g/10 min, a shear viscosity from 800 Pa·s to 1900 Pa·s, and a melt strength from 30 cN to 80 cN.

Abstract: A branched polymer, a preparation method thereof and a method for preparing a foam are provided. The branched polymer is a transesterification product of a composition, and the composition includes 100 parts by weight of polyethylene terephthalate and 0.5-2.0 parts by weight of polyol. The branched polymer has an inherent viscosity of from 1.2 dL/g to 1.6 dL/g, a number average molecular weight of from 75,000 g/mol to 90,000 g/mol, a polydispersity index from 3.0 to 6.0, a melt index from 0.8 g/10 min to 7.5 g/10 min, a shear viscosity from 800 Pa·s to 1900 Pa·s, and a melt strength from 30 cN to 80 cN.

Abstract: Disclosed is a thermoplastic polyester elastomer, which is formed by reacting 100 parts by weight of polyester and 0.01 to 2 parts by weight of an epoxy resin with two epoxy groups, wherein the polyester is formed by reacting a parts by mole of a hard-segment diol, b parts by mole of a soft-segment diol, and 1 part by mole of a diacid, wherein 1?a?3 and 0.005?b?1.5.

Abstract: In some embodiments, a semiconductor device comprises a first active region, a second active region, and a conductive metal structure. The second active region is separate from the first active region. The conductive metal structure is arranged to connect the first active region and the second active region. The conductive metal structure includes a first leg, a second leg and a body. The second leg is separate from the first leg and a body extending between and connecting the first leg and the second leg.

Abstract: A semiconductor structure includes a substrate and a metal gate. The metal gate includes a metallic filling layer and disposed over the substrate. The semiconductor structure further includes a dielectric material over the metallic filling layer and separating the metallic filling layer from a conductive trace. The conductive trace is over the dielectric material. The semiconductor structure further includes a conductive plug extending longitudinally through the dielectric material and ending with a lateral encroachment inside the metallic filling layer along a direction. The lateral direction is substantially perpendicular to the longitudinal direction of the conductive plug.

Abstract: A method and a circuit component for suppressing crosstalk associated with the common voltage in a liquid crystal display are disclosed. In particular, in a liquid crystal display where the crosstalk is mainly caused by various control signals generated by a timing control circuit, one or more timing control signals are extracted from the timing control circuit and processed to become a compensation signal. The compensation signal is provided to display area of the liquid crystal display. The timing control signals generated by the timing control circuit include a start signal and a plurality of clock signals. The steps for processing these signals may include summing, inverting, high-pass filtering and amplitude adjustment, to be carried out in different orders and/or combinations. When the timing control signals are current signals, the steps for processing these signals may include current-to-voltage conversion, summing and inverting.

Abstract: In some embodiments, a semiconductor device comprises a first active region, a second active region, and a conductive metal structure. The second active region is separate from the first active region. The conductive metal structure is arranged to connect the first active region and the second active region. The conductive metal structure includes a first leg, a second leg and a body. The second leg is separate from the first leg and a body extending between and connecting the first leg and the second leg.

Abstract: Disclosed is a thermoplastic polyester elastomer, which is formed by reacting 100 parts by weight of ester and 0.01 to 2 parts by weight of an epoxy resin with two epoxy groups, wherein the ester is formed by reacting a parts by mole of a hard-segment diol, b parts by mole of a soft-segment diol, and 1 part by mole of a diacid, wherein 1?a?3 and 0.005?b?1.5.

Abstract: A method for manufacturing a foam shoe material includes the following steps. (a) A plate prototype is formed, wherein the plate prototype is composed of thermoplastic polyurethane. (b) The plate prototype is foamed by a supercritical fluid to form a foam shoe material including a plurality of microporous structures and an average aperture of the microporous structures is smaller than 100 micrometers.

Abstract: A semiconductor structure includes a substrate and a metal gate. The metal gate includes a metallic filling layer and disposed over the substrate. The semiconductor structure further includes a dielectric material over the metallic filling layer and separating the metallic filling layer from a conductive trace. The conductive trace is over the dielectric material. The semiconductor structure further includes a conductive plug extending longitudinally through the dielectric material and ending with a lateral encroachment inside the metallic filling layer along a direction. The lateral direction is substantially perpendicular to the longitudinal direction of the conductive plug.

Abstract: A semiconductor structure includes a substrate and a metal gate. The metal gate includes a metallic filling layer and disposed over the substrate. The semiconductor structure further includes a dielectric material over the metallic filling layer and separating the metallic filling layer from a conductive trace. The conductive trace is over the dielectric material. The semiconductor structure further includes a conductive plug extending longitudinally through the dielectric material and ending with a lateral encroachment inside the metallic filling layer along a direction. The lateral direction is substantially perpendicular to the longitudinal direction of the conductive plug.

Abstract: A semiconductor structure includes a substrate and a metal gate. The metal gate includes a metallic filling layer and disposed over the substrate. The semiconductor structure further includes a dielectric material over the metallic filling layer and separating the metallic filling layer from a conductive trace. The conductive trace is over the dielectric material. The semiconductor structure further includes a conductive plug extending longitudinally through the dielectric material and ending with a lateral encroachment inside the metallic filling layer along a direction. The lateral direction is substantially perpendicular to the longitudinal direction of the conductive plug.

Abstract: A method and a circuit component for suppressing crosstalk associated with the common voltage in a liquid crystal display are disclosed. In particular, in a liquid crystal display where the crosstalk is mainly caused by various control signals generated by a timing control circuit, one or more timing control signals are extracted from the timing control circuit and processed to become a compensation signal. The compensation signal is provided to display area of the liquid crystal display. The timing control signals generated by the timing control circuit include a start signal and a plurality of clock signals. The steps for processing these signals may include summing, inverting, high-pass filtering and amplitude adjustment, to be carried out in different orders and/or combinations. When the timing control signals are current signals, the steps for processing these signals may include current-to-voltage conversion, summing and inverting.

Abstract: A method for packaging a light emitting diode is provided. The steps comprise: providing a material; drying the material; feeding the material into a feeding inlet; and providing a mold with pre-embedded light diodes. The material enters the feeding inlet and is injected into the mold by pressing a screw, allowing the material to combine with the light emitting diode.

Abstract: Disclosed is a high thermally conductive composite, including a first composite and a second composite having a co-continuous and incompatible dual-phase manner. The first composite consists of glass fiber distributed into polyphenylene sulfide, and the second composite consists of carbon material distributed into polyethylene terephthalate. The carbon material includes graphite, graphene, carbon fiber, carbon nanotube, or combinations thereof.

Abstract: The disclosed is a copolymer having a formula as: R1 is a combination of naphthalene, phenylene, butyl, and hexyl. R2 is a combination of ethylene, cyclohexlene, 2-methylpropyl, and neopentyl. n is a number of 1500 to 3000. The copolymer has a transparency greater than 80%, a thermal resistance greater than 100° C., a moisture absorption less than 0.5 wt %, and yellowing under UV/climate resistance greater than 1000 hours.

Abstract: The disclosed is a copolymer having a formula as: R1 is a combination of naphthalene, phenylene, butyl, and hexyl. R2 is a combination of ethylene, cyclohexlene, 2-methylpropyl, and neopentyl. n is a number of 1500 to 3000. The copolymer has a transparency greater than 80%, a thermal resistance greater than 100, a moisture absorption less than 0.5 wt %, and yellowing under UV/climate resistance greater than 1000 hours, such that the copolymer is adapted to be applied in packaging material for light emitting devices.