Abstract: Methods and apparatus for filling features on a substrate are provided herein. In some embodiments, a method of filling features on a substrate includes: depositing a first metallic material on the substrate and within a feature disposed in the substrate in a first process chamber via a chemical vapor deposition (CVD) process at a first temperature; depositing a second metallic material on the first metallic material in a second process chamber at a second temperature and at a first bias power to form a seed layer of the second metallic material; etching the seed layer in the second process chamber at a second bias power greater than the first bias power to form an intermix layer within the feature comprising the first metallic material and the second metallic material; and heating the substrate to a third temperature greater than the second temperature, causing a reflow of the second metallic material.

Abstract: Methods and apparatus for processing a plurality of substrates are provided herein. In some embodiments, a method of processing a plurality of substrates in a physical vapor deposition (PVD) chamber includes: performing a series of reflow processes on a corresponding series of substrates over at least a portion of a life of a sputtering target disposed in the PVD chamber, wherein a substrate-to-target distance in the PVD chamber and a support-to-target distance within the PVD chamber are each controlled as a function of the life of the sputtering target.

Abstract: Methods and apparatus for processing a plurality of substrates are provided herein. In some embodiments, a method of processing a plurality of substrates in a physical vapor deposition (PVD) chamber includes: performing a series of reflow processes on a corresponding series of substrates over at least a portion of a life of a sputtering target disposed in the PVD chamber, wherein a substrate-to-target distance in the PVD chamber and a support-to-target distance within the PVD chamber are each controlled as a function of the life of the sputtering target.

Abstract: Methods and apparatus for processing a substrate are provided herein. A method, for example, includes igniting a plasma at a first pressure within a processing volume of a process chamber; depositing sputter material from a target disposed within the processing volume while decreasing the first pressure to a second pressure within a first time frame while maintaining the plasma; continuing to deposit sputter material from the target while decreasing the second pressure to a third pressure within a second time frame less than the first time frame while maintaining the plasma; and continuing to deposit sputter material from the target while maintaining the third pressure for a third time frame that is greater than or equal to the second time frame while maintaining the plasma.

Abstract: Methods and apparatus for method for filling a feature with copper. In some embodiments, the methods include: (a) depositing a first cobalt layer via a physical vapor deposition (PVD) process atop a substrate field and atop a sidewall and a bottom surface of a feature disposed in a substrate to form a first cobalt portion atop the substrate field and a second cobalt portion atop the sidewall; (b) depositing copper atop the first cobalt portion atop the substrate field; and (c) flowing the copper disposed atop the first cobalt portion atop the substrate field over the second cobalt portion and into the feature, wherein the first cobalt portion atop the substrate field reduces the mobility of copper compared to the mobility of copper over the second cobalt portion.

Abstract: Methods and apparatus for filling features on a substrate are provided herein. In some embodiments, a method of filling features on a substrate includes: depositing a first metallic material on the substrate and within a feature disposed in the substrate in a first process chamber via a chemical vapor deposition (CVD) process at a first temperature; depositing a second metallic material on the first metallic material in a second process chamber at a second temperature and at a first bias power to form a seed layer of the second metallic material; etching the seed layer in the second process chamber at a second bias power greater than the first bias power to form an intermix layer within the feature comprising the first metallic material and the second metallic material; and heating the substrate to a third temperature greater than the second temperature, causing a reflow of the second metallic material.

Abstract: Methods and apparatus for processing a substrate are provided herein. A method, for example, includes igniting a plasma at a first pressure within a processing volume of a process chamber; depositing sputter material from a target disposed within the processing volume while decreasing the first pressure to a second pressure within a first time frame while maintaining the plasma; continuing to deposit sputter material from the target while decreasing the second pressure to a third pressure within a second time frame less than the first time frame while maintaining the plasma; and continuing to deposit sputter material from the target while maintaining the third pressure for a third time frame that is greater than or equal to the second time frame while maintaining the plasma.

Abstract: A method of filling structures on a substrate uses a semi-dynamic reflow process. The method may include depositing a metallic material on the substrate at a first temperature, heating the substrate to a second temperature higher than the first temperature wherein heating of the substrate causes a static reflow of the deposited metallic material on the substrate, stopping heating of the substrate, and depositing additional metallic material on the substrate causing a dynamic reflow of the deposited additional metallic material on the substrate. RF bias power may be applied during the dynamic reflow to facilitate in maintaining the temperature of the substrate.

Abstract: A method of filling structures on a substrate uses a semi-dynamic reflow process. The method may include depositing a metallic material on the substrate at a first temperature, heating the substrate to a second temperature higher than the first temperature wherein heating of the substrate causes a static reflow of the deposited metallic material on the substrate, stopping heating of the substrate, and depositing additional metallic material on the substrate causing a dynamic reflow of the deposited additional metallic material on the substrate. RF bias power may be applied during the dynamic reflow to facilitate in maintaining the temperature of the substrate.

Abstract: A silicon and tin based micro-structured material and methods are shown. In one example, the silicon and tin based micro-structured material is used as an electrode in a battery, such as a lithium ion battery.

Abstract: Methods and apparatus for method for filling a feature with copper. In some embodiments, the methods include: (a) depositing a first cobalt layer via a physical vapor deposition (PVD) process atop a substrate field and atop a sidewall and a bottom surface of a feature disposed in a substrate to form a first cobalt portion atop the substrate field and a second cobalt portion atop the sidewall; (b) depositing copper atop the first cobalt portion atop the substrate field; and (c) flowing the copper disposed atop the first cobalt portion atop the substrate field over the second cobalt portion and into the feature, wherein the first cobalt portion atop the substrate field reduces the mobility of copper compared to the mobility of copper over the second cobalt portion.

Abstract: A silicon and tin based micro-structured material and methods are shown. In one example, the silicon and tin based micro-structured material is used as an electrode in a battery, such as a lithium ion battery.

Abstract: A nanostructured composite material includes a substrate, a porous layer including a highly structured material, and a coating including nanoparticles. A method for forming the nanostructured composite material can include forming a porous layer on a substrate, the porous layer including a highly structured material, and applying nanoparticles to the porous layer to form the nanostructured composite material.

Abstract: A nanostructured composite material includes a substrate, a porous layer including a highly structured material, and a coating including nanoparticles. A method for forming the nanostructured composite material can include forming a porous layer on a substrate, the porous layer including a highly structured material, and applying nanoparticles to the porous layer to form the nanostructured composite material.