Abstract: A low-cost wafer-level packaging (WLP) method for attaching glass to optical image-sensor devices on a semiconductor wafer in order to increase the yield of image-sensor modules during later steps of assembly. One embodiment relates to applications with image-sensors (and microlenses) fabricated on a wafer. A glass wafer is singulated, aligned to mirror the die pattern on an image-sensor wafer, and then bonded to the image-sensor wafer such that optical adhesive forms a layer between the each image-sensor and its glass cover. Another embodiment applies cavity walls to singulated glass covers, which are then attached to image sensors which may be formed on a single wafer. The wafer can then be singulated and a plurality of image sensor packages is formed.

Abstract: The embodiments of the present invention include a bias circuit for a power-amplifying device, which receives and amplifies an input RF signal having a series of RF cycles within a modulation envelop. The bias circuit compensates odd-order distortion processes by detecting the power in the input signal and providing a dynamic adjustment to a bias stimulus for the power-amplifying device within a time scale of the modulation envelope.

Abstract: Embodiments of the invention provide analyte sensors having elements designed to modulate their chemical reactions as well as methods for making and using such sensors. In certain embodiments of the invention, the sensor includes a hydrophilic comb-copolymer having a central chain and a plurality of side chains coupled to the central chain, wherein at least one side chain comprises a silicone moiety.

Abstract: The safe-operating area (SOA) in a heterojunction bipolar transistor (HBT) is improved by providing a collector region in the transistor having a graded (uniformly or stepped) doping between the base region and the underlying subcollector region with the collector doping being lower near the base and higher near the subcollector and with the collector doping being less than the doping of the subcollector. The non-uniformly doped collector reduces Kirk effect induced breakdown when collector current increases.

Abstract: A method of removing a sacrificial emitter feature in a bipolar complementary metal oxide semiconductor (BICMOS) process with a super self-aligned bipolar junction transistor (BJT) is disclosed. According to the new method, a mask layer, such as an oxide deposited using high density plasma (HDP) techniques, is deposited over an extrinsic base layer and over a sacrificial emitter structure. Because of the particular characteristic of the HDP oxide, the deposition of HDP oxide forms a triangular-like structure over the sacrificial emitter structure having a maximum thickness less than the thickness of the HDP oxide over the extrinsic base layer. This facilitates the complete removal of the HDP oxide above the sacrificial emitter layer without the complete removal of the HDP oxide above the extrinsic base layer. This allows the removal of the sacrificial emitter structure while the remaining HDP oxide, serving as a mask, protects the underlying extrinsic base layer.

Abstract: The safe-operating area (SOA) in a heterojunction bipolar transistor (HBT) is improved by providing a collector region in the transistor having a graded (continuous or stepped) doping between the base region and the underlying subcollector region with the collector doping being lowest near the base and highest near the subcollector and with the collector doping being less than the doping of the subcollector. The non-uniformly doped collector reduces Kirk effect induced breakdown when collector current increases.

Abstract: The safe-operating area (SOA) in a heterojunction bipolar transistor (HBT) is improved by providing a collector region in the transistor having a graded (uniformly or stepped) doping between the base region and the underlying subcollector region with the collector doping being lower near the base and higher near the subcollector and with the collector doping being less than the doping of the subcollector. The non-uniformly doped collector reduces Kirk effect induced breakdown when collector current increases.

Abstract: An electronic module includes an interconnect module having a plurality of metal layers separated by a plurality of dielectric layers in a stacked structure with electronic components mounted on one surface of the module. The electronic components are selectively interconnected by drilling via holes completely through all dielectric layers with a conductive material such as solder in each via contacting metal layers to be interconnected and each metal layer which is not connected by a via having a metal pattern devoid of metal at the via location. For via connecting non-ground layers, there will be a patch of solder mask on the backside ground layer to electrically prevent this via from inadvertently connecting to ground.

Abstract: An insulated trench isolation structure is formed by ion implanting impurities proximate to the trench edges for enhancing the oxidation rate and, hence, increasing the thickness of the oxide at the trench edges. Embodiments include ion implanting impurities prior to growing an oxide liner. The resulting thick oxide on the trench edges avoids overlap of a subsequently deposited polysilicon layer and breakdown problems attendant upon a thinned gate oxide at the trench edges.

Abstract: Waste toner is detected in a container of an image forming apparatus. An auger is provided within the container. A switch is provided which is operable depending upon a torque associated with operation of the auger. A frequency of activation of the switch is detected. A “not full”, “near full” and “full” condition of the waste toner in the container is determined depending upon the frequency of activation of the switch.

Abstract: A temperature compensating circuit for use with a current mirror circuit for maintaining a reference current value during temperature variations includes a compensating transistor connected in parallel with a reference current transistor and bias circuitry for biasing the compensating transistor whereby current flows from the reference node to ground through the compensating transistor to remove excess current from the reference transistor when temperature increases. A diode can be included in the bias circuitry for limiting bias current flow when the reference voltage drops below the voltage drop of the diode. An on/off switch circuit can be provided in parallel with the reference current transistor to further reduce reference current in specific applications.

Abstract: An end seal for use in an electrophotographic image forming apparatus uses an array of ridges (or grooves) to urge toner inwardly so as to help prevent toner escape. The end seal works in conjunction with a cleaning blade. The end seal includes a blade pocket for mating with the end portions of the cleaning blade and a middle portion having an array of ridges thereon. The ridges are angled inward to urge any toner trapped therebetween inward away from the end seals, where the toner can be directed to a waste reservoir in a normal fashion. This “snowplowing” action of the ridges helps prevent outward migration of toner, thereby minimizing toner escape. The end seal may be composed of two or more layers of differing materials. There may be an end seal at each end of the cleaner blade.

Abstract: A temperature compensating circuit for use with a current mirror circuit for maintaining a reference current value during temperature variations includes a compensating transistor connected in parallel with a reference current transistor and bias circuitry for biasing the compensating transistor whereby current flows from the reference node to ground through the compensating transistor to remove excess current from the reference transistor when temperature increases. A diode can be included in the bias circuitry for limiting bias current flow when the reference voltage drops below the voltage drop of the diode. An on/off switch circuit can be provided in parallel with the reference current transistor to further reduce reference current in specific applications.

Abstract: Waste toner is detected in a container of an image forming apparatus. An auger is provided within the container. A switch is provided which is operable depending upon a torque associated with operation of the auger. A frequency of activation of the switch is detected. A “not full”, “near full” and “full” condition of the waste toner in the container is determined depending upon the frequency of activation of the switch.

Abstract: A waste toner container and auger therefor. Auger flights have a continuously decreasing flight pitch from the front of the auger to the back of the auger. The auger includes a flightless portion near the back wall of the container.

Abstract: An end seal for use in an electrophotographic image forming apparatus uses an array of ridges (or grooves) to urge toner inwardly so as to help prevent toner escape. The end seal works in conjunction with a cleaning blade. The end seal includes a blade pocket for mating with the end portions of the cleaning blade and a middle portion having an array of ridges thereon. The ridges are angled inward to urge any toner trapped therebetween inward away from the end seals, where the toner can be directed to a waste reservoir in a normal fashion. This “snowplowing” action of the ridges helps prevent outward migration of toner, thereby minimizing toner escape. The end seal may be composed of two or more layers of differing materials. There may be an end seal at each end of the cleaner blade.

Abstract: An RF microwave power transistor has an input/output feed structure which functions as a low impedance microstrip line by providing a ground plane in close proximity to the feed structure on one surface of a semiconductor body. A second ground plane can be provided on an opposing surface of the semiconductor body with vias interconnecting the first and second ground planes. In addition to reducing feed impedance, a larger total transistor size can be provided before “odd mode oscillation” occurs.

Abstract: Efficiency of an RF/microwave power amplifier is increased at a back-off power level by increasing the load resistance of the amplifier at the reduced output power level as compared to load impedance at a higher power level including full operating power. The different load impedances can be realized with two amplification units in parallel each having different load impedances. Alternatively, a single amplification path can be provided with an output impedance matching network which is selectively bypassed for increased impedance load during back-off power operation. In another embodiment, the output impedance matching network can include a shunt inductance which is selectively switched into the network to increase impedance for back-off power operation.

Abstract: A toner cleaning apparatus for a printing device includes a toner separator operating against a component of the printing device, to dislodge toner particles therefrom. A toner receptacle is provided for collecting the dislodged toner particles, and an auger positively conveys the dislodged toner particles into the toner receptacle. A vibration plate is provided for receiving the toner particles dislodged by the toner separator, and for directing the dislodged toner particles to the auger. The vibration plate includes lengths thereof extending into the auger and deflected by the auger to induce vibrations along the plate and distribute-and convey toner particles disposed thereon.

Abstract: A waste toner container and auger therefor. Auger flights have a continuously decreasing flight pitch from the front of the auger to the back of the auger. The auger includes a flightless portion near the back wall of the container.