Abstract: Methodologies and test configurations are provided for testing thermal interface materials and, in particular, methodologies and test configurations are provided for testing thermal interface materials used for testing integrated circuits. A test methodology includes applying a thermal interface material on a device under test. The test methodology further includes monitoring the device under test with a plurality of temperature sensors. The test methodology further includes determining whether any of the plurality of temperature sensors increases above a steady state.

Abstract: A method for formation of a segregated interfacial dopant layer at a junction between a semiconductor material and a silicide layer includes depositing a doped metal layer over the semiconductor material; annealing the doped metal layer and the semiconductor material, wherein the anneal causes a portion of the doped metal layer and a portion of the semiconductor material to react to form the silicide layer on the semiconductor material, and wherein the anneal further causes the segregated interfacial dopant layer to form between the semiconductor material and the silicide layer, the segregated interfacial dopant layer comprising dopants from the doped metal layer; and removing an unreacted portion of the doped metal layer from the silicide layer.

Abstract: A method to determine the cleanness of a semiconductor substrate and the quantity/density of pin holes that may exist within a patterned antireflective coating (ARC) is provided. Electroplating is employed to monitor the changes in the porosity of the ARC caused by the pin holes during solar cell manufacturing. In particular, electroplating a metal or metal alloy to form a metallic grid on an exposed front side surface of a substrate also fills the pin holes. The quantity/density of metallic filled pin holes (and hence the number of pin holes) in the patterned ARC can then be determined.

Abstract: Methodologies and test configurations are provided for testing thermal interface materials and, in particular, methodologies and test configurations are provided for testing thermal interface materials used for testing integrated circuits. A test methodology includes applying a thermal interface material on a device under test. The test methodology further includes monitoring the device under test with a plurality of temperature sensors. The test methodology further includes determining whether any of the plurality of temperature sensors increases above a steady state.

Abstract: A method to determine the cleanness of a semiconductor substrate and the quantity/density of pin holes that may exist within a patterned antireflective coating (ARC) is provided. Electroplating is employed to monitor the changes in the porosity of the ARC caused by the pin holes during solar cell manufacturing. In particular, electroplating a metal or metal alloy to form a metallic grid on an exposed front side surface of a substrate also fills the pin holes. The quantity/density of metallic filled pin holes (and hence the number of pin holes) in the patterned ARC can then be determined.

Abstract: The present disclosure relates to an improved method of providing a Ni silicide metal contact on a silicon surface by electrodepositing a Ni film on a silicon substrate. The improved method results in a controllable silicide formation wherein the silicide has a uniform thickness. The metal contacts may be incorporated in, for example, CMOS devices, MEM (micro-electro-mechanical) devices, and photovoltaic cells.

Abstract: Methodologies and test configurations are provided for testing thermal interface materials and, in particular, methodologies and test configurations are provided for testing thermal interface materials used for testing integrated circuits. A test methodology includes applying a thermal interface material on a device under test. The test methodology further includes monitoring the device under test with a plurality of temperature sensors. The test methodology further includes determining whether any of the plurality of temperature sensors increases above a steady state.

Abstract: A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.

Abstract: A method to determine the cleanness of a semiconductor substrate and the quantity/density of pin holes that may exist within a patterned antireflective coating (ARC) is provided. Electroplating is employed to monitor the changes in the porosity of the ARC caused by the pin holes during solar cell manufacturing. In particular, electroplating a metal or metal alloy to form a metallic grid on an exposed front side surface of a substrate also fills the pin holes. The quantity/density of metallic filled pin holes (and hence the number of pin holes) in the patterned ARC can then be determined.

Abstract: The invention is directed to a radiation sensitive compound comprising a surface binding group proximate to one end of the compound for attachment to a substrate, and a metal binding group proximate to an opposite end of the compound. The metal binding group is not radiation sensitive. The radiation sensitive compound also includes a body portion disposed between the surface binding group and the metal binding group, and a radiation sensitive group positioned in the body portion or adjacent to the metal binding group. The surface binding group is capable of attaching to a substrate selected from a metal, a metal oxide, or a semiconductor material.

Abstract: A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.

Abstract: The invention is directed to a radiation sensitive compound comprising a surface binding group proximate to one end of the compound for attachment to a substrate, and a metal binding group proximate to an opposite end of the compound. The metal binding group is not radiation sensitive. The radiation sensitive compound also includes a body portion disposed between the surface binding group and the metal binding group, and a radiation sensitive group positioned in the body portion or adjacent to the metal binding group. The surface binding group is capable of attaching to a substrate selected from a metal, a metal oxide, or a semiconductor material.

Abstract: The present disclosure relates to an improved method of providing a Ni silicide metal contact on a silicon surface by electrodepositing a Ni film on a silicon substrate. The improved method results in a controllable silicide formation wherein the silicide has a uniform thickness. The metal contacts may be incorporated in, for example, CMOS devices, MEM (micro-electro-mechanical) devices, and photovoltaic cells.

Abstract: The invention is directed to a method of forming carbon nanomaterials or semiconductor nanomaterials. The method comprises providing a substrate and attaching a molecular precursor to the substrate. The molecular precursor includes a surface binding group for attachment to the substrate and a binding group for attachment of metal-containing species. The metal-containing species is selected from a metal cation, metal compound, or metal or metal-oxide nanoparticle to form a metallized molecular precursor. The metallized molecular precursor is then subjected to a heat treatment to provide a catalytic site from which the carbon nanomaterials or semiconductor nanomaterials form. The heating of the metallized molecular precursor is conducted under conditions suitable for chemical vapor deposition of the carbon nanomaterials or semiconductor nanomaterials.

Abstract: A method for formation of a segregated interfacial dopant layer at a junction between a semiconductor material and a silicide layer includes depositing a doped metal layer over the semiconductor material; annealing the doped metal layer and the semiconductor material, wherein the anneal causes a portion of the doped metal layer and a portion of the semiconductor material to react to form the silicide layer on the semiconductor material, and wherein the anneal further causes the segregated interfacial dopant layer to form between the semiconductor material and the silicide layer, the segregated interfacial dopant layer comprising dopants from the doped metal layer; and removing an unreacted portion of the doped metal layer from the silicide layer.

Abstract: A method to determine the cleanness of a semiconductor substrate and the quantity/density of pin holes that may exist within a patterned antireflective coating (ARC) is provided. Electroplating is employed to monitor the changes in the porosity of the ARC caused by the pin holes during solar cell manufacturing. In particular, electroplating a metal or metal alloy to form a metallic grid on an exposed front side surface of a substrate also fills the pin holes. The quantity/density of metallic filled pin holes (and hence the number of pin holes) in the patterned ARC can then be determined.

Abstract: A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.

Abstract: Methodologies and test configurations are provided for testing thermal interface materials and, in particular, methodologies and test configurations are provided for testing thermal interface materials used for testing integrated circuits. A test methodology includes applying a thermal interface material on a device under test. The test methodology further includes monitoring the device under test with a plurality of temperature sensors. The test methodology further includes determining whether any of the plurality of temperature sensors increases above a steady state.

Abstract: The present disclosure provides a method of electrodeposition of a metal or metal alloy on at least one surface of a semiconductor material. The method of the present invention provides full coverage of an electrodeposited metallic film on the at least one surface of the semiconductor material. The method of the present disclosure includes providing a semiconductor material. A metallic film is applied to at least one surface of the semiconductor material by an electrodeposition process. The electrodeposition process employed uses current waveforms that apply a low current density initially, and after a predetermined period of time, the current density is changed to a high current density.

Abstract: The invention is directed to a method of forming carbon nanomaterials or semiconductor nanomaterials. The method comprises providing a substrate and attaching a molecular precursor to the substrate. The molecular precursor includes a surface binding group for attachment to the substrate and a binding group for attachment of metal-containing species. The metal-containing species is selected from a metal cation, metal compound, or metal or metal-oxide nanoparticle to form a metallized molecular precursor. The metallized molecular precursor is then subjected to a heat treatment to provide a catalytic site from which the carbon nanomaterials or semiconductor nanomaterials form. The heating of the metallized molecular precursor is conducted under conditions suitable for chemical vapor deposition of the carbon nanomaterials or semiconductor nanomaterials.