Abstract: Methods and systems for optoelectronics transceivers of a CMOS chip are disclosed and may include receiving optical signals from optical fibers via grating couplers, which may include a guard ring. A CW optical signal may be received from a laser source via optical couplers, and may be modulated using optical modulators, which may be Mach-Zehnder and/or ring modulators. Circuitry in the CMOS chip may drive the optical modulators. The modulated optical signal may be communicated out of the CMOS chip into optical fibers via grating couplers. The received optical signals may be communicated between devices via waveguides. The photodetectors may include germanium waveguide photodiodes, avalanche photodiodes, and/or heterojunction diodes. The CW optical signal may be generated using an edge-emitting and/or a vertical-cavity surface emitting semiconductor laser.

Abstract: Methods and systems for optoelectronics transceivers of a CMOS chip are disclosed and may include receiving optical signals from optical fibers via grating couplers, which may include a guard ring. A CW optical signal may be received from a laser source via optical couplers, and may be modulated using optical modulators, which may be Mach-Zehnder and/or ring modulators. Circuitry in the CMOS chip may drive the optical modulators. The modulated optical signal may be communicated out of the CMOS chip into optical fibers via grating couplers. The received optical signals may be communicated between devices via waveguides. The photodetectors may include germanium waveguide photodiodes, avalanche photodiodes, and/or heterojunction diodes. The CW optical signal may be generated using an edge-emitting and/or a vertical-cavity surface emitting semiconductor laser.

Abstract: A transceiver comprising a chip, a semiconductor laser bonded to the chip, and one or more photodetectors, the chip comprising optical and optoelectronic devices and electronic circuitry, where the transceiver is operable to: communicate, utilizing the semiconductor laser, an optical source signal into the chip, generate first optical signals in the chip based on the optical source signal, transmit the first optical signals from the chip via a, and receive second optical signals from the light pipe and converting the second optical signals to electrical signals via the photodetectors. The optical signals may be communicated out of and in to a top surface of the chip. The one or more photodetectors may be integrated in the chip. The optoelectronic devices may include the one or more photodetectors integrated in the chip.

Abstract: A transceiver comprising a chip, a semiconductor laser bonded to the chip, and one or more photodetectors, the chip comprising optical and optoelectronic devices and electronic circuitry, where the transceiver is operable to: communicate, utilizing the semiconductor laser, an optical source signal into the chip, generate first optical signals in the chip based on the optical source signal, transmit the first optical signals from the chip via a, and receive second optical signals from the light pipe and converting the second optical signals to electrical signals via the photodetectors. The optical signals may be communicated out of and in to a top surface of the chip. The one or more photodetectors may be integrated in the chip. The optoelectronic devices may include the one or more photodetectors integrated in the chip.

Abstract: Various embodiments are drawn to systems and methods for detecting an analyte of interest in a sample including an optical sensor, a capture probe attached to a surface of the optical sensor wherein the capture probe is capable of binding to the analyte to form a duplex or complex, and an antibody capable of binding to the analyte, duplex, or complex. In several embodiments, systems and methods further include a particle attached to the antibody or capable of binding to the antibody. In several embodiments, systems and methods for analyte detection feature one or more of the following: high detection sensitivity and specificity, scalability and multiplex capacity, ability to analyze large analytes, and ability to detect or measure multiple individual binding events in real-time.

Abstract: A transceiver comprising a chip, a semiconductor laser, and one or more photodetectors, the chip comprising optical and optoelectronic devices and electronic circuitry, where the transceiver is operable to: communicate, utilizing the semiconductor laser, an optical source signal into the chip, generate first optical signals in the chip based on the optical source signal, transmit the first optical signals from the chip via a light pipe with a sloped reflective surface coupled to the chip, and receive second optical signals from the light pipe and converting the second optical signals to electrical signals via the photodetectors. The optical signals may be communicated out of and in to a top surface of the chip. The one or more photodetectors may be integrated in the chip. The optoelectronic devices may include the one or more photodetectors integrated in the chip. The light pipe may be a planar lightwave circuit (PLC).

Abstract: A transceiver comprising a chip, a semiconductor laser, and one or more photodetectors, the chip comprising optical and optoelectronic devices and electronic circuitry, where the transceiver is operable to: communicate, utilizing the semiconductor laser, an optical source signal into the chip, generate first optical signals in the chip based on the optical source signal, transmit the first optical signals from the chip via a light pipe with a sloped reflective surface coupled to the chip, and receive second optical signals from the light pipe and converting the second optical signals to electrical signals via the photodetectors. The optical signals may be communicated out of and in to a top surface of the chip. The one or more photodetectors may be integrated in the chip. The optoelectronic devices may include the one or more photodetectors integrated in the chip. The light pipe may be a planar lightwave circuit (PLC).

Abstract: Various embodiments are drawn to systems and methods for detecting an analyte of interest in a sample including an optical sensor, a capture probe attached to a surface of the optical sensor wherein the capture probe is capable of binding to the analyte to form a duplex or complex, and an antibody capable of binding to the analyte, duplex, or complex. In several embodiments, systems and methods further include a particle attached to the antibody or capable of binding to the antibody. In several embodiments, systems and methods for analyte detection feature one or more of the following: high detection sensitivity and specificity, scalability and multiplex capacity, ability to analyze large analytes, and ability to detect or measure multiple individual binding events in real-time.

Abstract: A transceiver comprising a chip, a semiconductor laser, and one or more photodetectors, the chip comprising optical and optoelectronic devices and electronic circuitry, where the transceiver is operable to: communicate, utilizing the semiconductor laser, an optical source signal into the chip via a light pipe with a sloped reflective surface, generate first optical signals in the chip based on the optical source signal, transmit the first optical signals from the chip via the light pipe, and receive second optical signals from the light pipe and converting the second optical signals to electrical signals via the photodetectors. The optical signals may be communicated out of and in to a top surface of the chip. The one or more photodetectors may be integrated in the chip. The optoelectronic devices may include the one or more photodetectors integrated in the chip. The light pipe may be a planar lightwave circuit (PLC).

Abstract: Methods and systems for optoelectronics transceivers integrated on a CMOS chip are disclosed and may include receiving optical signals from optical fibers via grating couplers on a top surface of a CMOS chip, which may include a guard ring. Photodetectors may be integrated in the CMOS chip. A CW optical signal may be received from a laser source via grating couplers, and may be modulated using optical modulators, which may be Mach-Zehnder and/or ring modulators. Circuitry in the CMOS chip may drive the optical modulators. The modulated optical signal may be communicated out of the top surface of the CMOS chip into optical fibers via grating couplers. The received optical signals may be communicated between devices via waveguides. The photodetectors may include germanium waveguide photodiodes, avalanche photodiodes, and/or heterojunction diodes. The CW optical signal may be generated using an edge-emitting and/or a vertical-cavity surface emitting semiconductor laser.

Abstract: A transceiver comprising a chip, a semiconductor laser, and one or more photodetectors, the chip comprising optical and optoelectronic devices and electronic circuitry, where the transceiver is operable to: communicate, utilizing the semiconductor laser, an optical source signal into the chip via a light pipe with a sloped reflective surface, generate first optical signals in the chip based on the optical source signal, transmit the first optical signals from the chip via the light pipe, and receive second optical signals from the light pipe and converting the second optical signals to electrical signals via the photodetectors. The optical signals may be communicated out of and in to a top surface of the chip. The one or more photodetectors may be integrated in the chip. The optoelectronic devices may include the one or more photodetectors integrated in the chip. The light pipe may be a planar lightwave circuit (PLC).

Abstract: A transceiver comprising a chip, a semiconductor laser, and one or more photodetectors, the chip comprising optical and optoelectronic devices and electronics circuitry, where the transceiver is operable to: communicate, utilizing the semiconductor laser, an optical source signal into the chip via a light pipe with a sloped reflective surface, generate first optical signals in the chip based on the optical source signal, transmit the first optical signals from the chip via the light pipe, and receive second optical signals from the light pipe and converting the second optical signals to electrical signals via the photodetectors. The optical signals may be communicated out of and in to a top surface of the chip. The one or more photodetectors may be integrated in the chip. The optoelectronic devices may include the one or more photodetectors integrated in the chip. The light pipe may be a planar lightwave circuit (PLC).

Abstract: A transceiver comprising a chip, a semiconductor laser, and one or more photodetectors, the chip comprising optical and optoelectronic devices and electronics circuitry, where the transceiver is operable to: communicate, utilizing the semiconductor laser, an optical source signal into the chip via a light pipe with a sloped reflective surface, generate first optical signals in the chip based on the optical source signal, transmit the first optical signals from the chip via the light pipe, and receive second optical signals from the light pipe and converting the second optical signals to electrical signals via the photodetectors. The optical signals may be communicated out of and in to a top surface of the chip. The one or more photodetectors may be integrated in the chip. The optoelectronic devices may include the one or more photodetectors integrated in the chip. The light pipe may be a planar lightwave circuit (PLC).

Abstract: A transceiver comprising a plurality of CMOS chips, a first chip comprising optical and optoelectronic devices and at least a second chip comprising electronic devices may be operable to communicate an optical source signal from a semiconductor laser into the first CMOS chip. The optical source signal may be used to generate first optical signals that may be transmitted from the first CMOS chip to optical fibers. Second optical signals may be received from the optical fibers and converted to electrical signals via photodetectors. The optical source signal may be communicated from the semiconductor laser into the CMOS chip via optical fibers in to a top surface and the first optical signals may be communicated out of a top surface of the CMOS chip. The first optical signals may be communicated from the first CMOS chip via optical couplers, which may comprise grating couplers.

Abstract: Various embodiments are drawn to systems and methods for detecting an analyte of interest in a sample including an optical sensor, a capture probe attached to a surface of the optical sensor wherein the capture probe is capable of binding to the analyte to form a duplex or complex, and an antibody capable of binding to the analyte, duplex, or complex. In several embodiments, systems and methods further include a particle attached to the antibody or capable of binding to the antibody. In several embodiments, systems and methods for analyte detection feature one or more of the following: high detection sensitivity and specificity, scalability and multiplex capacity, ability to analyze large analytes, and ability to detect or measure multiple individual binding events in real-time.

Abstract: A transceiver comprising a CMOS chip and a plurality of semiconductor lasers coupled with the CMOS chip may be operable to communicate optical source signals from the plurality of semiconductor lasers into the CMOS chip. The source signals may be used to generate first optical signals that may be transmitted from the CMOS chip to optical fibers. Second optical signals may be received from the optical fibers and converted to electrical signals for use by the CMOS chip. The optical source signals may be communicated from the semiconductor lasers into the CMOS chip via optical fibers in to a top surface and the first optical signals may be communicated out of a top surface of the CMOS chip. The first optical signals may be communicated from the CMOS chip via optical couplers, which may comprise grating couplers.

Abstract: Systems and methods for configuring an integrated transceiver are disclosed. In one embodiment, very small form factor transceivers can be configured to allow 10 G optical interconnects over distances up to 2 km. Transceiver circuitry can be integrated on a single die, and be electrically connected to a transmitter such as a laser-diode and a receiver such as a photo-diode. In one embodiment, the laser and photo diodes can be edge-operating, and be mounted on the die. In one embodiment, one or both of the diodes can be surface-operating so as to allow relaxation of alignment requirement. In one embodiment, one or both of the diodes can be mounted on a submount that is separate from the die so as to facilitate separate assembly and testing. In one embodiment, the diodes can be optically coupled to a ferrule via an optical coupling element so as to manage loss in certain situations.

Abstract: A transceiver on a CMOS chip including optical and optoelectronic devices, and electronic circuitry may be operable to communicate optical signals between the CMOS chip and optical fibers coupled to the CMOS chip via a semiconductor laser and one or more photodetectors. The optical and optoelectronic devices may include waveguides, modulators, multiplexers, switches, and couplers. The photodetector may be integrated in the CMOS chip. The photodetector and the semiconductor laser may be mounted on the CMOS chip. The optical signals may be communicated out of and in to a top surface of the CMOS chip. A transceiver on a CMOS chip including optical and optoelectronic devices, and electronic circuitry, may be operable to communicate optical signals between the CMOS chip and optical fibers coupled to the CMOS chip via grating couplers. The optical signals may be communicated out of and in to a top surface of the CMOS chip.

Abstract: A transceiver comprising a plurality of CMOS chips may be operable to communicate an optical source signal from a semiconductor laser into a first CMOS chip via optical couplers. The optical source signal may be used to generate first optical signals that are transmitted from the first CMOS chip to optical fibers coupled to the first CMOS chip via one or more optical couplers. Second optical signals may be received from the optical fibers and converted to electrical signals via photodetectors in the first CMOS chip. The optical source signal may be communicated from the semiconductor laser into the first CMOS chip via optical fibers in to a top surface and the first optical signals may be communicated out of a top surface of the first CMOS chip. The electrical signals may be communicated to at least a second of the plurality of CMOS chips comprising electronic devices.

Abstract: A transceiver comprising a CMOS chip and a laser coupled to the chip may be operable to communicate an optical source signal from a semiconductor laser into the CMOS chip. The optical source signal may be used to generate first optical signals that are transmitted from the CMOS chip to optical fibers coupled to the CMOS chip. Second optical signals may be received from the optical fibers and converted to electrical signals via photodetectors in the CMOS chip. The optical source signal may be communicated from the semiconductor laser into the CMOS chip via optical fibers in to a top surface and the first optical signals may be communicated out of a top surface of the CMOS chip. The optical source signal may be communicated into the CMOS chip and the first optical signals may be communicated from the CMOS chip via optical couplers, which may comprise grating couplers.