Abstract: The invention concerns a support intended for the implementation of a method of self-assembly of at least one element on a surface of the support, including at least one assembly pad on said surface, a liquid drop having a static angle of contact on the assembly pad smaller than or equal to 15°, and nanometer- or micrometer-range pillars on said surface around the pad, the liquid drop having a static angle of contact on the pillars greater than or equal to 150°.

Abstract: Method of assembly of a first element (I) and a second element (II) each having an assembly surface, at least one of the assembly surfaces comprising recessed metal portions (6, 106) surrounded by dielectric materials (4, 104) comprising: A) a step to bring the two assembly surfaces into contact without application of pressure such that direct bonding is obtained between the assembly surfaces, said first and second assemblies (I, II) forming a stack with a given thickness (e), B) a heat treatment step of said stack during which the back faces (10, 110) of the first (I) and the second (II) elements are held in position so that they are held at a fixed distance (E) between the given stack thickness+/?2 nm.

Abstract: A method for self-assembling microelectronic components includes providing a self-aligning substrate having protrusions, each having a thickness greater than 1 ?m and an upper face and flanks, the upper face and the flanks being hydrophobic. The method also includes providing dies, each die having a first face and a second hydrophilic face, and providing a self-assembling substrate. Finally, the method includes obtaining, by capillary effect, the self-alignment of each die through the first face thereof on a protrusion of the self-aligning substrate, then obtaining the assembly of the dies through the second hydrophilic face thereof on the self-assembling substrate by direct adhesion. Such a method has application in the industrial production of 3D integrated circuits.

Abstract: A method for bonding a first surface provided with at least one copper area surrounded by a silicon oxide area to a second surface includes an operation of treatment of the first surface by a plasma, before placing the first surface in contact with the second surface. The plasma is formed from a gas source containing a silicon oxide nitriding agent and a copper oxide reducing agent containing hydrogen. The gas source may include an N2 and NH3 and/or H2 gas mixture or a N2O and H2 gas mixture, or ammonia, which is then used both as a nitriding agent and as a reducing agent. The plasma obtained from this gas source then necessarily contains nitrogen and hydrogen, which enables, in a single operation, to provide a high-performance bonding between the first and second surfaces.

Abstract: A method for self-assembling microelectronic components includes providing a self-aligning substrate having protrusions, each having a thickness greater than 1 ?m and an upper face and flanks, the upper face and the flanks being hydrophobic. The method also includes providing dies, each die having a first face and a second hydrophilic face, and providing a self-assembling substrate. Finally, the method includes obtaining, by capillary effect, the self-alignment of each die through the first face thereof on a protrusion of the self-aligning substrate, then obtaining the assembly of the dies through the second hydrophilic face thereof on the self-assembling substrate by direct adhesion. Such a method has application in the industrial production of 3D integrated circuits.

Abstract: The invention concerns a support intended for the implementation of a method of self-assembly of at least one element on a surface of the support, including at least one assembly pad on said surface, a liquid drop having a static angle of contact on the assembly pad smaller than or equal to 15°, and nanometer- or micrometer-range pillars on said surface around the pad, the liquid drop having a static angle of contact on the pillars greater than or equal to 150°.

Abstract: A method of manufacturing an emissive LED display device, including the steps of forming a plurality of chips, each including at least one LED and, on a connection surface, a plurality of hydrophilic electric connection areas and a hydrophobic area; forming a transfer substrate including, for each chip, a plurality of hydrophilic electric connection areas and a hydrophobic area; arranging a drop of a liquid on each electric connection area of the transfer substrate and/or of each chip; and affixing the chips to the transfer substrate by direct bonding, using the capillary restoring force of the drops to align the electric connection areas of the chips with the electric connection areas of the transfer substrate.

Abstract: Method including the steps of a) Providing a first stack including a first substrate on which is deposited a first metal layer including a first metal, and a first solubilization layer distinct from the first metal layer, the first solubilization layer including a first getter material configured to solubilize the oxygen, b) Providing a second stack including a second substrate on which is deposited a second metal layer including a second metal, c) Contacting the first metal layer and the second metal layer so as to obtain a direct metal bonding between the first metal layer and the second metal layer, and d) Applying a heat treatment for annealing the bonding.

Abstract: A method for modifying crystalline structure of a copper element with a planar surface, including: a) producing a copper standard having large grains, wherein the standard includes a planar surface, b) reducing roughness of the planar surfaces to a roughness of less than 1 nm, c) cleaning the planar surfaces, d) bringing the two planar surfaces into contact, and e) annealing.

Abstract: A method for capillary self-assembly of a plate and a carrier, including: forming an etching mask on a region of a substrate; reactive-ion etching the substrate, the etching using a series of cycles each including isotropic etching followed by surface passivation, wherein a duration of the isotropic etching for each cycle increases from one cycle to another, a ratio between durations of the passivation and etching of each cycle is lower than a ratio for carrying out a vertical anisotropic etching to form a carrier having an upper surface defined by the region and side walls defining an acute angle with the upper surface; removing the etching mask; placing a droplet on the upper surface of the carrier; and placing the plate on the droplet.

Abstract: A support is provided, including a reception zone in which the external envelope matches the shape of a plate configured to be placed on a droplet deposited at least in the reception zone in order to achieve capillary self-assembly of the plate and the support, and at least one pair of tracks that extend on the support from the reception zone and that have a lyophilic-type affinity with the droplet such that an overflow of the droplet beyond the reception zone is guided in the tracks, wherein the at least one pair of tracks includes a first track and a second track that do not have the same lyophilic-type degree of affinity with the droplet.

Abstract: A three-dimensional integrated structure may include two assembled integrated circuits respectively including two metallic lines, and at least two cavities passing through one of the integrated circuits and opening onto two locations respectively in electrical contact with the two metallic lines. The cavities may be sized to place a measuring apparatus at the bottom of the cavities, and in electrical contact with the two locations.

Abstract: A method for capillary self-assembly of a plate and a carrier, including: forming an etching mask on a region of a substrate; reactive-ion etching the substrate, the etching using a series of cycles each including isotropic etching followed by surface passivation, wherein a duration of the isotropic etching for each cycle increases from one cycle to another, a ratio between durations of the passivation and etching of each cycle is lower than a ratio for carrying out a vertical anisotropic etching to form a carrier having an upper surface defined by the region and side walls defining an acute angle with the upper surface; removing the etching mask; placing a droplet on the upper surface of the carrier; and placing the plate on the droplet.

Abstract: Method including the steps of a) Providing a first stack including a first substrate on which is deposited a first metal layer including a first metal, and a first solubilization layer distinct from the first metal layer, the first solubilization layer including a first getter material configured to solubilize the oxygen, b) Providing a second stack including a second substrate on which is deposited a second metal layer including a second metal, c) Contacting the first metal layer and the second metal layer so as to obtain a direct metal bonding between the first metal layer and the second metal layer, and d) Applying a heat treatment for annealing the bonding.

Abstract: A method for producing at least one photosensitive infrared detector by assembling a first electronic component including plural photodiodes sensitive to infrared radiation and a second electronic component including at least one electronic circuit for reading the plurality of photodiodes, an infrared detector, and an assembly for producing such a detector, the method including: production, on each one of the first and second components, of a connection face formed at least partially by a silicon oxide (SiO2)-based layer; bonding the first component and the second component by the connection faces thereof, thus performing the direct bonding of the two components. The method can simplify hybridization of heterogeneous components for producing an infrared detector.

Abstract: A method for producing at least one pad assembly (32, 50) on a support (19, 43) for use in a method for self-assembling at least one element (10) on the support (19, 43), comprises fanning, on the support (19, 43), a layer (28, 48) of at least one fluorinated material around the location (30, 44) of the pad assembly (32, 50), the layer (28, 48) having a thickness greater than 10 nm. The layer (28, 48) and the location (30, 44) are exposed to an ultraviolet treatment in the presence of ozone to form the pad assembly (32, 50) at said location (30, 44), wherein a drop of liquid (16) having a static contact angle on the pad assembly (32, 50) less than or equal to 15°, after the exposure to the ultraviolet treatment, has a static contact angle on the layer (28, 48) greater than or equal to 100°.

Abstract: A method for producing at least one pad assembly (32, 50) on a support (19, 43) for use in a method for self-assembling at least one element (10) on the support (19, 43), comprises fanning, on the support (19, 43), a layer (28, 48) of at least one fluorinated material around the location (30, 44) of the pad assembly (32, 50), the layer (28, 48) having a thickness greater than 10 nm. The layer (28, 48) and the location (30, 44) are exposed to an ultraviolet treatment in the presence of ozone to form the pad assembly (32, 50) at said location (30, 44), wherein a drop of liquid (16) having a static contact angle on the pad assembly (32, 50) less than or equal to 15°, after the exposure to the ultraviolet treatment, has a static contact angle on the layer (28, 48) greater than or equal to 100°.

Abstract: A direct bonding method between at least a first layer (104) comprising silicon oxide having a thickness equal to or higher than about 10 nm and a second layer (108) of material having hydrophilicity, comprising at least the steps of: making the first layer (104) on a first substrate (102) such that the absorbance value of this first layer (104), at a vibration frequency of silanol bonds present in the first layer (104) equal to about 3660 cm?1, is equal to or higher than about 1.5×10?5 nm?1, the silanol bonds being formed in at least part of the thickness of the first layer (104) which is equal to or higher than about 10 nm; direct bonding between the first layer (104) and the second layer (108).

Abstract: To avoid problems of hydrolysis of the silicon oxide formed by PECVD at the surface of at least one wafer, it is proposed to cover, in the vacuum deposition chamber used to deposit the silicon oxide, said oxide with a temporary protective layer containing nitrogen. The protective layer thus protects the silicon oxide against the outer environment and especially against humidity when the wafer provided with the silicon oxide is stored outside of the vacuum deposition chamber. Afterwards, the protective layer is removed, for example, by chemical-mechanical. polishing, just before the two wafers are placed into contact. The protective layer may be formed by a PECVD silicon nitride deposition, by plasma nitriding or nitrogen doping of a superficial portion of the silicon oxide.

Abstract: A three-dimensional integrated structure may include two assembled integrated circuits respectively including two metallic lines, and at least two cavities passing through one of the integrated circuits and opening onto two locations respectively in electrical contact with the two metallic lines. The cavities may be sized to place a measuring apparatus at the bottom of the cavities, and in electrical contact with the two locations.