Abstract: A method relaxing a strained thin film, secured via a first main face of an initial support, the second main face of the thin film being a contact face. The method supplies an intermediate support including a polymer layer having a main free contact face, the polymer's thermal expansion coefficient being greater than that of the thin film, adhesively brings into contact the contact face of the strained thin film with the contact face of the polymer layer, eliminates the initial support, realizing relaxation of the thin film through formation of wrinkles and revealing the first main face of the thin film, increases the polymer layer temperature to stretch the relaxed thin film and eliminate the wrinkles, secures the first main face of the thin film with one face of a receiving substrate, and eliminates the intermediate support to obtain a relaxed thin film integral with the receiving substrate.

Abstract: A method for transferring a thin layer from an initial substrate includes forming an assembly of the initial substrate with one face of a silicone type polymer layer, this face having been treated under an ultraviolet radiation, and processing the initial substrate to form the thin layer on the silicone type polymer layer.

Abstract: A method of carrying out a transfer of one or more first components or of a first layer onto a second substrate including: a) application and maintaining, by electrostatic effect, of the one or more first components or of the first layer, on a first substrate, made of a ferroelectric material, electrically charged, b) placing in contact, direct or by molecular adhesion, and transfer of the components or the layer onto a second substrate, and c) dismantling of the first substrate, leaving at least one part of the components or the layer on the second substrate.

Abstract: A method of forming, on a surface of a substrate, at least one hydrophilic attachment area for the purpose of self-assembling a component or a chip, in which a hydrophobic area, which delimits the hydrophilic attachment area, is produced.

Abstract: In the fabrication of a thin-film flexible electronic device of the screen type that includes a plurality of thin-film components on a glass support a starting support is prepared, including a rigid bulk substrate and a glass sheet fastened to the rigid bulk substrate by reversible direct bonding so as to obtain a removable interface. The plurality of thin-film components are fabricated on the glass sheet. The glass sheet is separated from the rigid bulk substrate by disassembling the interface and, the glass sheet and the plurality of thin-film components are transferred to a final support.

Abstract: A method of forming an epitaxially grown layer by forming a region of weakness in a support substrate to define a support portion and a remainder portion on opposite sides of the region of weakness, epitaxially growing an epitaxially grown layer on the support portion after forming the region of weakness but prior to detachment of the support portion from the remainder portion; bonding the epitaxially grown layer to an acceptor substrate before detaching the remainder portion from the support portion; and detaching the remainder portion from the support portion at the region of weakness. The epitaxially grown layer may be removed from the support portion as a free-standing structure.

Abstract: A method of separating a structure including a fragile zone delimiting two substructures to be separated, where at least one plane blade is advanced in a separation plane corresponding to a median plane of the fragile zone, from an entry edge of the structure in a direction of advance toward an exit edge of the structure, so as to cause progressive separation of the two substructures, and where the inclination of the blade in the separation plane is varied relative to the direction of advance.

Abstract: A method for transferring a thin layer from an initial substrate includes forming an assembly of the initial substrate with one face of a silicone type polymer layer, this face having been treated under an ultraviolet radiation, and processing the initial substrate to form the thin layer on the silicone type polymer layer.

Abstract: A method of forming an epitaxially grown layer by providing a support substrate that includes a region of weakness therein to define a support portion and a remainder portion on opposite sides of the region of weakness. The region of weakness comprises atomic species implanted in the support substrate to facilitate detachment of the support portion from the remainder portion. The method also includes epitaxially growing an epitaxially grown layer in association with the support portion.

Abstract: The invention relates to a method for manufacturing an optoelectronic device comprising: a step for manufacturing optical guiding means; a step for assembling these means with electronic circuit means and generating optically active means on top of this assembly.

Abstract: A method for direct molecular adhesion of an electronic compound (6) on a polymer (4) is described. The polymer (4) is coated with a bonding layer (5), for example silicon oxide, which enables the problems caused by the presence of hydrocarbons to be overcome. The method makes it possible to produce adhesive-free three-dimensional structures (10).

Abstract: A method for assembling by molecular bonding two substrates, at least one of which is made of a semiconductor material characterised in that one of substrates, called a first substrate, includes a surface (A), where at least one portion is flat and provided with an initial surface roughness compatible with the molecular bonding. The inventive method consists in depositing a thin oxide or nitride bonding layer, whose thickness ranges from 10 to 20 nm, on at least one portion of the surface flat part of the first substrate for carrying out a molecular bonding without pre-polishing, in saturating the thin bonding layer with hydroxyl groups, in bringing the thin bonding layer saturated with hydroxyl groups in contact with the second substrate (10) surface (B) which is at least locally flat with respect to the flat part of the surface (A) and saturated with hydroxyl groups and in carrying out a hydrophilic molecular bonding between said two substrates.

Abstract: A method relaxing a strained thin film, secured via a first main face of an initial support, the second main face of the thin film being a contact face. The method supplies an intermediate support including a polymer layer having a main free contact face, the polymer's thermal expansion coefficient being greater than that of the thin film, adhesively brings into contact the contact face of the strained thin film with the contact face of the polymer layer, eliminates the initial support, realizing relaxation of the thin film through formation of wrinkles and revealing the first main face of the thin film, increases the polymer layer temperature to stretch the relaxed thin film and eliminate the wrinkles, secures the first main face of the thin film with one face of a receiving substrate, and eliminates the intermediate support to obtain a relaxed thin film integral with the receiving substrate.

Abstract: The invention concerns a method for transferring at least one object of micrometric or millimetric size onto a host substrate by means of a handle. The method comprises the following steps: fixing a polymer handle on said object in order to be able to obtain a structure, constituted of the handle and the object superimposed, and deformable, surface preparation of the face of the object opposite the handle with a view to its adhesion on a face of the host substrate, bringing into contact and adhesion of said face of the object on said face of the host substrate after deformation of at least the handle, removal of the polymer handle.

Abstract: A method for bonding two free surfaces, respectively of first and second different substrates, includes a formation step, on the free surface of the first substrate, of a self-assembled mono-molecular layer consisting of a thiol compound of the SH—R—X type, where —R is a carbonaceous chain and —X is a group selected from the group consisting in —H, —OH and —COOH, at least said free surface of the first substrate being formed by a material able to form molecular bonds with the —SH group of the thiol compound. The method also includes preparing the free surface of the second substrate consisting in saturating the free surface of the second substrate with —H groups if —X is a —H group or with —OH groups if —X is selected from the group consisting in —OH and —COOH, and placing the two free surfaces in contact.

Abstract: A method for direct molecular adhesion of an electronic compound (6) on a polymer (4) is described. The polymer (4) is coated with a bonding layer (5), for example silicon oxide, which enables the problems caused by the presence of hydrocarbons to be overcome. The method makes it possible to produce adhesive-free three-dimensional structures (10).

Abstract: The invention relates to an SiCOI type composite substrate manufacturing method comprising the following steps: supply of an initial substrate comprising an Si or SiC support (1) bearing a layer (2) of SiO2 whereon a thin layer (3) of SiC is transferred, epitaxy of SiC (4) on the thin layer (3) of SiC. The epitaxy is conducted at the following temperatures from 1450° C. to obtain 6H or 4H polytype epitaxy (4) on a transferred thin 6H or 4H polytype layer (3) respectively, if the support (1) consists of SiC, from 1350° C. to obtain 3C polytype epitaxy (4) on a transferred thin 3C polytype layer (3), if the support (1) consists of Si or SiC, from 1350° C. to obtain 6H or 4H polytype epitaxy (4) on a transferred thin 6H or 4H polytype layer (3) respectively, if the support (1) consists of Si.

Abstract: A method of forming an epitaxially grown layer by providing a support substrate that includes a region of weakness therein to define a support portion and a remainder portion on opposite sides of the region of weakness. The region of weakness comprises atomic species implanted in the support substrate to facilitate detachment of the support portion from the remainder portion. The method also includes epitaxially growing an epitaxially grown layer in association with the support portion.

Abstract: The invention relates to a method for manufacturing an optoelectronic device comprising: a—a step for manufacturing optical guiding means (66); b—a step for assembling these means with electronic circuit means (68); c—the generating of optically active means (70) on top of this assembly.

Abstract: A method for transferring an electrically active thin film from an initial substrate to a target substrate including: ion implantation through one face of the initial substrate to create a buried, embrittled film at a determined depth relative to the implanted face of the initial substrate, thus delimiting a thin film between the implanted face and the buried face; fastening the implanted face of the initial substrate with a face of the target substrate; separating the thin film from the remainder of the initial substrate at the level of the buried film; and thinning down the thin film transferred on the target substrate. The implantation dosage, energy, and current are chosen, during the ion implantation, so that concentration in implantation defects is less than a determined threshold, resulting in, within the thinned down thin film, a number of acceptor defects compatible with desired electrical properties of the thin film.