Abstract: The invention relates to a power semiconducting device made from a semiconducting material epitaxied on a stacked structure (10) comprising a layer of semiconducting material (13) transferred onto a first face of a support substrate (11) and fixed to the support substrate by an electrically insulating layer (12), the support substrate comprising electrically conducting means between said first face and a second face, the transferred layer of semiconducting material (13) acting as an epitaxy support for the epitaxied semiconducting material (14, 15).

Abstract: A process for fabricating a structure including a carrier substrate and a layer of semiconductor material on one surface of the carrier substrate. The process a) forms a layer of semiconductor material on one surface of a first substrate, b) forms a cleavage zone in the first substrate, which delimits a superficial layer, c) transfers the first substrate, with the layer of semiconductor material, onto the carrier substrate, d) provides energy to cause cleavage of the first substrate along the cleavage zone, and e) removes said superficial layer to uncover the layer of semiconductor material.

Abstract: A process for separating at least two elements of a structure. The two elements are in contact with one another along an interface and are fixed to one another by interatomic bonds at their interface. An ion implantation is performed in order to introduce ions into the structure with an adequate energy for them to reach the interface and with an adequate dose to break the interatomic bonds. This brings about at the interface, the formation of a gaseous phase having an adequate pressure to permit the separation of the two elements.