Abstract: The present disclosure relates to compositions and methods for compositions, methods, and kits for treating cancer using chimeric antigen receptor (CAR) modified cells. Some embodiments of the present disclosure relate to an isolated nucleic acid sequence encoding CAR. The CAR may include an antigen binding domain, a transmembrane domain, a costimulatory signaling region, and a CD3 zeta signaling domain. The antigen binding domain may bind to an antigen of a non-essential organ.

Abstract: The disclosure provides a self-biased magneto-optical non-reciprocal metasurface device. The device includes substrate layer and a sub-wavelength structure layer. The substrate layer is a material layer with a refractive index of 1 to 5 in a microwave frequency band. The sub-wavelength structure layer includes a plurality of square columnar elements arranged in a matrix period with equal period in row and column directions. The square columnar elements include magneto-optical material. The adjustment of phase and amplitude of a circularly polarized electromagnetic wave is achieved by changing the length, width and height of the square columnar elements, and thus the device attains a desired isolation and insertion loss at a center frequency f0. The parameters of the magneto-optical material are: coercivity Hc?1000 A/m; remanence Br?1 kGs; a voigt parameter of a permittivity tensor or permeability tensor in a working frequency band?0.01.

Abstract: Disclosed is a magnetic encoder, a method and system for detecting an absolute electrical angle, and a readable storage medium. The magnetic encoder includes a magnetoresistance sensor, a magnetic field auxiliary coil and a coil current control circuit electrically connected with the magnetic field auxiliary coil, the magnetoresistance sensor being a planar component, the coil current control circuit being configured to supply current to the magnetic field auxiliary coil, to allow the magnetic field auxiliary coil to generate an auxiliary magnetic field, the auxiliary magnetic field influencing the magnetic field component in the first direction and the magnetic field component in the second direction, forming a resultant magnetic field, and the magnetoresistance sensor being configured to detect the resultant magnetic field and the component of the 2-dimension magnetic field generated by the magnet.

Abstract: A high-sensitivity high-temperature sensor based on dislocation welding of suspended optical fiber is provided and includes a broadband light source, an optical fiber circulator, a sensing head and a spectrometer. The optical fiber circulator is connected to the broadband light source, the sensing head and the spectrometer individually, the sensing head includes a first single-mode optical fiber, a multi-mode optical fiber, a suspended core optical fiber and a second single-mode optical fiber which are connected in sequence. The high-sensitivity high-temperature sensor has the following advantages: simple to manufacture, no need for expensive special equipment; small sizes, compact structure, easy to use; full optical fiber structure, which can measure high temperatures up to 1000 degrees; no need for adhesive, good sensor stability; double cavities in parallel can generate vernier effects with high sensitivity.

Abstract: A high-sensitivity high-temperature sensor based on dislocation welding of suspended optical fiber is provided and includes a broadband light source, an optical fiber circulator, a sensing head and a spectrometer. The optical fiber circulator is connected to the broadband light source, the sensing head and the spectrometer individually, the sensing head includes a first single-mode optical fiber, a multi-mode optical fiber, a suspended core optical fiber and a second single-mode optical fiber which are connected in sequence. The high-sensitivity high-temperature sensor has the following advantages: simple to manufacture, no need for expensive special equipment; small sizes, compact structure, easy to use; full optical fiber structure, which can measure high temperatures up to 1000 degrees; no need for adhesive, good sensor stability; double cavities in parallel can generate vernier effects with high sensitivity.

Abstract: The disclosure provides a self-biased magneto-optical non-reciprocal metasurface device. The device includes substrate layer and a sub-wavelength structure layer. The substrate layer is a material layer with a refractive index of 1 to 5 in a microwave frequency band. The sub-wavelength structure layer includes a plurality of square columnar elements arranged in a matrix period with equal period in row and column directions. The square columnar elements include magneto-optical material. The adjustment of phase and amplitude of a circularly polarized electromagnetic wave is achieved by changing the length, width and height of the square columnar elements, and thus the device attains a desired isolation and insertion loss at a center frequency f0. The parameters of the magneto-optical material are: coercivity Hc?1000 A/m; remanence Br?1 kGs; a voigt parameter of a permittivity tensor or permeability tensor in a working frequency band?0.01.

Abstract: A lidar system, including: a laser, an optical detector, a laser antenna, and a silicon-based integrated magneto-optical circulator. The silicon-based integrated magneto-optical circulator includes a silicon-based integrated Mach-Zehnder interference structure or a silicon-based integrated micro-ring structure, and silicon-based integrated magneto-optical waveguides. The silicon-based integrated magneto-optical circulator further includes an input port, a receiving port, and an emission port. The laser is aligned and coupled to the input port of the silicon-based integrated magneto-optical circulator via an optical fiber, a grating coupler, or an edge coupler. The optical detector is aligned and coupled to the receiving port of the silicon-based integrated magneto-optical circulator via the optical fiber, the grating coupler, or the edge coupler.

Abstract: An interface information display method and apparatus are provided. The method includes: in a list display state, if a click on a list item is detected, performing operations including: acquiring object information and a position of the clicked list item; generating a screenshot image of a current page; displaying the screenshot image in full screen, displaying a first mask layer on the screenshot image, and displaying a second mask layer on the first mask layer; shrinking the screenshot image to a predetermined ratio, acquiring an object thumbnail and detailed information from the object information, displaying, in a predetermined size, the object thumbnail on the second mask layer, and displaying the detailed information in a blank area on the second mask layer; and returning to the list display state when an area of the first mask layer non-overlapping with the second mask layer is clicked.

Abstract: The present disclosure provides a method and a system for detecting an absolute electrical angle, and a computer readable storage medium. The method includes: obtaining an angle sine signal corresponding to a magnetic component in a first direction and an angle cosine signal corresponding to a magnetic component in a second direction; calculating a scaling compensation sine signal and a scaling compensation cosine signal according to the angle sine signal, the angle cosine signal, and a scaling compensation formula; determining an angle interval corresponding to the scaling compensation sine signal and the scaling compensation cosine signal, and calculating a relative electrical angle according to a preset trigonometric function corresponding to the angle interval; obtaining a Hall signal detected by the Hall sensor, and determining a polarity position according to the Hall signal; and calculating the absolute electrical angle according to the relative electrical angle and the polarity position.

Abstract: The present disclosure provides a method and a system for detecting an absolute electrical angle, and a computer readable storage medium. The method includes: obtaining an angle sine signal corresponding to a magnetic component in a first direction and an angle cosine signal corresponding to a magnetic component in a second direction; calculating a scaling compensation sine signal and a scaling compensation cosine signal according to the angle sine signal, the angle cosine signal, and a scaling compensation formula; determining an angle interval corresponding to the scaling compensation sine signal and the scaling compensation cosine signal, and calculating a relative electrical angle according to a preset trigonometric function corresponding to the angle interval; obtaining a Hall signal detected by the Hall sensor, and determining a polarity position according to the Hall signal; and calculating the absolute electrical angle according to the relative electrical angle and the polarity position.

Abstract: Disclosed is a magnetic encoder, a method and system for detecting an absolute electrical angle, and a readable storage medium. The magnetic encoder includes a magnetoresistance sensor, a magnetic field auxiliary coil and a coil current control circuit electrically connected with the magnetic field auxiliary coil, the magnetoresistance sensor being a planar component, the coil current control circuit being configured to supply current to the magnetic field auxiliary coil, to allow the magnetic field auxiliary coil to generate an auxiliary magnetic field, the auxiliary magnetic field influencing the magnetic field component in the first direction and the magnetic field component in the second direction, forming a resultant magnetic field, and the magnetoresistance sensor being configured to detect the resultant magnetic field and the component of the 2-dimension magnetic field generated by the magnet.

Abstract: The present disclosure includes apparatuses and methods for sensing a resistive memory cell. A number of embodiments include performing a sensing operation on a memory cell to determine a current value associated with the memory cell, applying a programming signal to the memory cell, and determining a data state of the memory cell based on the current value associated with the memory cell before applying the programming signal and a current value associated with the memory cell after applying the programming signal.

Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.

Abstract: The present invention discloses a winding structure and method having a high power density, and motor applying the above. The winding of the present invention has a multilayer 2D structure, has a distributed structure with an electrical angle of 180 degrees and is manufactured in the form of a PCB, wherein each layer arranged only one phase winding. Each phase windings contains 2 layers, or 4 layers, or other even layers, of windings. The number of coil cycles in every layer is the same as the motor poles, the winding layers of a same phase are connected via a through hole, the connecting hole is arranged at a corner of an upper portion of the winding loop inside.

Abstract: An interface information display method and apparatus are provided. The method includes: in a list display state, if a click on a list item is detected, performing operations including: acquiring object information and a position of the clicked list item; generating a screenshot image of a current page; displaying the screenshot image in full screen, displaying a first mask layer on the screenshot image, and displaying a second mask layer on the first mask layer; shrinking the screenshot image to a predetermined ratio, acquiring an object thumbnail and detailed information from the object information, displaying, in a predetermined size, the object thumbnail on the second mask layer, and displaying the detailed information in a blank area on the second mask layer; and returning to the list display state when an area of the first mask layer non-overlapping with the second mask layer is clicked.

Abstract: A ferroelectric memory device includes a plurality of memory cells. Each of the memory cells comprises at least one electrode and a ferroelectric crystalline material disposed proximate the at least one electrode. The ferroelectric crystalline material is polarizable by an electric field capable of being generated by electrically charging the at least one electrode. The ferroelectric crystalline material comprises a polar and chiral crystal structure without inversion symmetry through an inversion center. The ferroelectric crystalline material does not consist essentially of an oxide of at least one of hafnium (Hf) and zirconium (Zr).

Abstract: A ferroelectric memory device includes a plurality of memory cells. Each of the memory cells comprises at least one electrode and a ferroelectric crystalline material disposed proximate the at least one electrode. The ferroelectric crystalline material is polarizable by an electric field capable of being generated by electrically charging the at least one electrode. The ferroelectric crystalline material comprises a polar and chiral crystal structure without inversion symmetry through an inversion center. The ferroelectric crystalline material does not consist essentially of an oxide of at least one of hafnium (Hf) and zirconium (Zr).

Abstract: The present disclosure includes apparatuses and methods for sensing a resistive memory cell. A number of embodiments include performing a sensing operation on a memory cell to determine a current value associated with the memory cell, applying a programming signal to the memory cell, and determining a data state of the memory cell based on the current value associated with the memory cell before applying the programming signal and a current value associated with the memory cell after applying the programming signal.

Abstract: Electronic apparatus, systems, and methods can include a resistive memory cell having a structured as an operably variable resistance region between two electrodes and a metallic barrier disposed in a region between the dielectric and one of the two electrodes. The metallic barrier can have a structure and a material composition to provide oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell. Additional apparatus, systems, and methods are disclosed.

Abstract: The present disclosure includes apparatuses and methods for sensing a resistive memory cell. A number of embodiments include performing a sensing operation on a memory cell to determine a current value associated with the memory cell, applying a programming signal to the memory cell, and determining a data state of the memory cell based on the current value associated with the memory cell before applying the programming signal and a current value associated with the memory cell after applying the programming signal.