Abstract: The present disclosure includes apparatuses and methods for sensing a resistive memory cell. A number of embodiments include performing a sensing operation on a memory cell to determine a current value associated with the memory cell, applying a programming signal to the memory cell, and determining a data state of the memory cell based on the current value associated with the memory cell before applying the programming signal and a current value associated with the memory cell after applying the programming signal.

Abstract: Apparatus, devices, systems, and methods are described that include filamentary memory cells. Mechanisms to substantially remove the filaments in the devices are described, so that the logical state of a memory cell that includes the that includes the removable filament can be detected. Additional apparatus, systems, and methods are described.

Abstract: A permanent-magnet AC motor comprises a motor and a controller coupled to the motor. The motor includes a winding. The controller includes a drive model configured to provide a drive current. Waveform of the drive current is spatially symmetrical. The winding has a waiting zone having electrical angle of 30° and a driving zone having electrical angle of 150° in each half electrical cycle when the motor is in operation. The driving zone is equally divided into five driving sub-zones.

Abstract: A patterned nonreciprocal optical resonator structure is provided that includes a resonator structure that receives an optical signal. A top cladding layer is deposited on a selective portion of the resonator structure. The top cladding layer is patterned so as to expose the core of the resonator structure defined by the selective portion. A magneto-optically active layer includes a magneto-optical medium being deposited on the exposed core of the resonator structure so as to generate optical non-reciprocity.

Abstract: Electronic apparatus, systems, and methods can include a resistive memory cell having a dielectric structured as an operably variable resistance region between an oxygen source and an oxygen sink. The dielectric, oxygen source, and an oxygen sink can be structured as a field driven unipolar memory element with respect to generation and healing of a filament in the dielectric. Additional apparatus, systems, and methods are disclosed.

Abstract: A method of forming a memory cell includes forming one of multivalent metal oxide material or oxygen-containing dielectric material over a first conductive structure. An outer surface of the multivalent metal oxide material or the oxygen-containing dielectric material is treated with an organic base. The other of the multivalent metal oxide material or oxygen-containing dielectric material is formed over the treated outer surface. A second conductive structure is formed over the other of the multivalent metal oxide material or oxygen-containing dielectric material.

Abstract: Apparatus, devices, systems, and methods are described that include filamentary memory cells. Mechanisms to substantially remove the filaments in the devices are described, so that the logical state of a memory cell that includes the that includes the removable filament can be detected. Additional apparatus, systems, and methods are described.

Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.

Abstract: The present disclosure includes apparatuses and methods for sensing a resistive memory cell. A number of embodiments include performing a sensing operation on a memory cell to determine a current value associated with the memory cell, applying a programming signal to the memory cell, and determining a data state of the memory cell based on the current value associated with the memory cell before applying the programming signal and a current value associated with the memory cell after applying the programming signal.

Abstract: A sensorless driving method for a single phase alternating current permanent magnet motor is described. The method comprises a starting drive mode and a stable drive mode.

Abstract: A method of forming a memory cell includes forming one of multivalent metal oxide material or oxygen-containing dielectric material over a first conductive structure. An outer surface of the multivalent metal oxide material or the oxygen-containing dielectric material is treated with an organic base. The other of the multivalent metal oxide material or oxygen-containing dielectric material is formed over the treated outer surface. A second conductive structure is formed over the other of the multivalent metal oxide material or oxygen-containing dielectric material.

Abstract: Electronic apparatus, systems, and methods can include a resistive memory cell having a structured as an operably variable resistance region between two electrodes and a metallic barrier disposed in a region between the dielectric and one of the two electrodes. The metallic barrier can have a structure and a material composition to provide oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell. Additional apparatus, systems, and methods are disclosed.

Abstract: Electronic apparatus, systems, and methods can include a resistive memory cell having a dielectric structured as an operably variable resistance region between an oxygen source and an oxygen sink. The dielectric, oxygen source, and an oxygen sink can be structured as a field driven unipolar memory element with respect to generation and healing of a filament in the dielectric. Additional apparatus, systems, and methods are disclosed.

Abstract: A method of forming a memory cell includes forming one of multivalent metal oxide material or oxygen-containing dielectric material over a first conductive structure. An outer surface of the multivalent metal oxide material or the oxygen-containing dielectric material is treated with an organic base. The other of the multivalent metal oxide material or oxygen-containing dielectric material is formed over the treated outer surface. A second conductive structure is formed over the other of the multivalent metal oxide material or oxygen-containing dielectric material.

Abstract: Apparatus, devices, systems, and methods are described that include filamentary memory cells. Mechanisms to substantially remove the filaments in the devices are described, so that the logical state of a memory cell that includes the that includes the removable filament can be detected. Additional apparatus, systems, and methods are described.

Abstract: A three-phase PMAC motor comprises a rotor and a stator. The rotor includes a rotor iron core, a plurality of rotor teeth, a plurality of rotor slots each formed between two adjacent rotor teeth, and a plurality of permanent magnets disposed in respective rotor slots and attached on the rotor iron core. The plurality of permanent magnets forms at least 8 pairs of magnet poles with one or two permanent magnets being associated with one pair of magnetic poles. The stator includes a stator iron core, a plurality of stator teeth protruding inwardly from inner surface of the stator iron core, three groups of armature windings wound around each of the stator teeth, and a plurality of stator slots formed between two adjacent stator teeth. Each group of armature windings is associated with one electrical phase. An electrical phase shift exists between each two armature windings.

Abstract: A last fourier transform architecture has parallel data processing paths. Input data is applied to the parallel data processing paths in a repeating sequence, and processed in those paths. Data sequencers are used to combine the outputs from the data processing paths into the required sequence.

Abstract: A permanent-magnet AC motor comprises a motor and a controller coupled to the motor. The motor includes a winding. The controller includes a drive model configured to provide a drive current. Waveform of the drive current is spatially symmetrical. The winding has a waiting zone having electrical angle of 30° and a driving zone having electrical angle of 150° in each half electrical cycle when the motor is in operation. The driving zone is equally divided into five driving sub-zones.

Abstract: A patterned nonreciprocal optical resonator structure is provided that includes a resonator structure that receives an optical signal. A top cladding layer is deposited on a selective portion of the resonator structure. The top cladding layer is patterned so as to expose the core of the resonator structure defined by the selective portion. A magneto-optically active layer includes a magneto-optical medium being deposited on the exposed core of the resonator structure so as to generate optical non-reciprocity.

Abstract: A multiplier is able to multiply an input data value by a selected constant value in CSD form. The selected constant value has a plurality of pairs of bits, and the multiplier includes multiplexers, each controlled by a respective pair of bits of the selected constant value. Each of the multiplexers has a plurality of inputs, and is connected to receive the input data value, the inverse of the input data value, and all zeros on said inputs, and it is controlled such that it outputs either the input data value, the inverse of the input data value, or all zeros, depending on the values of the respective pair of bits of the selected constant value.