Abstract: The present invention relates to a mutant p-hydroxyphenylpyruvate dioxygenase (HPPD) protein or a bioactive fragment thereof and an isolated polynucleotide comprising a nucleic acid sequence encoding the protein or fragment thereof, wherein the mutant p-hydroxyphenylpyruvate dioxygenase (HPPD) protein or a bioactive fragment thereof retains or enhances the property of catalyzing the conversion of p-hydroxyphenylpyruvate (HPP) to homogentisate and is significantly less sensitive to HPPD-inhibiting herbicides than a wild-type HPPD. The present invention also relates to a nucleic acid construct, an expression vector and a host cell comprising the polynucleotide, as well as to a method for producing a plant that has the property of catalyzing the conversion of p-hydroxyphenylpyruvate (HPP) to homogentisate and significantly reduced sensitivity to HPPD-inhibiting herbicides.

Abstract: The invention belongs to the technical field of agricultural chemicals, and in particular relates to a five-membered ring-substituted pyridazinol compound and a derivatives thereof, preparation method, herbicidal composition and application thereof. The compound is as shown in Formula I: wherein, X is halogen, cyano, alkyl, halogenated alkyl, alkoxy, halogenated alkoxy, R1R2N—(C?O)—, or R1R2N—, etc.; Ar is Het is a 5-membered unsaturated ring, the ring contains, besides the 1-C atom, 0 to 4 atoms or radicals follows to form the ring: O, NRb, S; Ra is one or more groups selected from: hydrogen, halogen, R—O—(CH2)n—, and R1R2R3SiO—, etc.; m is 0 or 1, n and q are independently an integer from 0 to 8, p is an integer from 1 to 8; R is hydrogen, or a halogen-containing or not containing group selected from alkyl, and alkenyl, etc.; Rb, R1, R2, R3 are each independently hydrogen, nitro, hydroxy, or amino, etc.

Abstract: The invention belongs to the technical field of agricultural chemicals, and in particular relates to a pyridine ring-substituted pyridazinol compound and a derivatives thereof, preparation method, herbicidal composition and application thereof. The compound is as shown in Formula I: wherein, X is halogen, cyano, alkyl, halogenated alkyl, alkoxy, halogenated alkoxy, R1R2N—(C?O)—, R1R2N—, hydroxy, or unsubstituted or substituted aryl; Y is independently selected from hydrogen, halogen, cyano, nitro, R—O—(CH2)n—, and R1R2 R3SiO—, etc.; r is an integer from 0 to 4, m is 0 or 1, n and q are independently an integer from 0 to 8, p is an integer from 1 to 8; R is hydrogen, or a halogen-containing or not containing group selected from alkyl, alkenyl, alkynyl, and cycloalkyl, etc.; R1, R2, R3 are each independently hydrogen, nitro, or hydroxy, etc. The compound and the derivative, as well as the composition thereof have very high herbicidal activity and good selectivity, and are safe for crops.

Abstract: Embodiments disclosed herein include optical sensor systems and methods of using such systems. In an embodiment, the optical sensor system comprises a housing and an optical path through the housing. In an embodiment, the optical path comprises a first end and a second end. In an embodiment a reflector is at the first end of the optical path, and a lens is between the reflector and the second end of the optical path. In an embodiment, the optical sensor further comprises an opening through the housing between the lens and the reflector.

Abstract: A method is disclosed for operating an endpoint detection system of a processing chamber having a ceiling formed therein, a substrate support located internal to the processing chamber, and a substrate resting on the substrate support. A transparent panel is located in the ceiling of the processing chamber, the panel oriented at a first acute angle relative to the substrate and the substrate support. The transparent panel receives an incident light beam from the endpoint detection system at a second acute angle relative to the panel. The transparent panel transmits the incident light beam to the substrate within the processing chamber at an angle perpendicular to the substrate and the substrate support.

Abstract: The present invention relates to the technical field of pesticides, particularly relates to a pyrazole compound or a salt thereof, a preparation method therefor, a herbicidal composition and use thereof. A pyrazole compound of formula (I) or a salt thereof: wherein, R1 represents hydrogen or C1-C4 alkyl; R2 represents C1-C3 alkyl; R3 represents C1-C6 linear chain or cyclic group containing one or more heteroatoms selected from O, S, and N; R4 represents C1-C3 alkyl or halogen; R5 represents pyrazole ring or pyrazole ring substituted with one or more groups selected from alkyl, alkoxyl, halogen, halogenated alkyl, amino, and nitro. The pyrazole compound is an excellent herbicide with broad spectrum biological activity and outstanding safety for crops.

Abstract: A tilted window for use in an endpoint detection system of a processing chamber, and a processing chamber having the same are described herein. In one example, the tilted window includes a mounting frame, and a panel mounted in the mounting frame. The mounting frame has a body having a top surface, a bottom surface, and an inner edge connecting the top surface to the bottom surface of the body of the mounting frame. The mounting frame further has a panel disposed in the mounting frame. The panel has a body having a top surface and a bottom surface. The top surface of the body of the panel is oriented at acute angle relative to the top surface of the body of the mounting frame.

Abstract: The present invention relates to the technical field of pesticides, particularly relates to a pyrazole compound or a salt thereof, a preparation method therefor, a herbicidal composition and use thereof. A pyrazole compound of formula (I) or a salt thereof: wherein, R1 represents hydrogen or C1-C4 alkyl; R2 represents C1-C3 alkyl; R3 represents C1-C6 linear chain or cyclic group containing one or more heteroatoms selected from O, S, and N; R4 represents C1-C3 alkyl or halogen; R5 represents pyrazole ring or pyrazole ring substituted with one or more groups selected from alkyl, alkoxyl, halogen, halogenated alkyl, amino, and nitro. The pyrazole compound is an excellent herbicide with broad spectrum biological activity and outstanding safety for crops.

Abstract: Disclosed are a pyrazole compound or a salt thereof, a preparation method therefor, a herbicidal composition and use thereof. The pyrazole compound or a salt thereof has a structure as shown in formula (I): wherein, R represents wherein, R?, R?, and R?? represent hydrogen, C1-C4 alkyl, C1-C4 halogenated alkyl, C1-C4 alkoxy or halogen, R?, R?, and R?? may be the same or different; R1 represents C1-C3 alkyl; R2 represents hydrogen or C1-C4 alkyl; R3 represents hydrogen or C1-C6 alkyl, optionally substituted phenyl, optionally substituted pyridyl, optionally substituted alkenyl, optionally substituted alkynyl, C1-C6 alkyl carbonyl, C1-C6 alkoxyl carbonyl, C1-C6 alkyl carbonyl methyl, etc. A compound having a pyrazole structure not only has excellent herbicidal effect on barnyard grass, but also is safe to rice in post-emergence application. More surprisingly, it also has good control efficacy on barnyard grass resistant to major herbicides, such as penoxsulam, quinclorac, cyhalofop-butyl, propanil, etc.

Abstract: The present invention belongs to the field of pesticides, particularly relates to a pyrazolone compound or a salt thereof, a preparation method therefor, a herbicidal composition and use thereof. The pyrazolone compound is as described in formula I: In the formula, R1R2N represents substituted or unsubstituted 3-8 membered nitrogen-containing heterocyclic group containing 1-3 heteroatoms; or R1 and R2 each represent hydrogen or C1-8 alkyl; R3 represents hydrogen, C1-4 alkyl, alkenyl, alkynyl, unsubstituted C3-6 cycloalkyl or C3-6 cycloalkyl substituted by C1-4 alkyl; R4 represents methyl, ethyl, n-propyl, isopropyl or cyclopropyl; X represents hydrogen, —S(O)nR6, —R7 or substituted or unsubstituted 3-8 membered heterocyclic group containing 1-4 heteroatoms, wherein, n represents 1, 2 or 3, R6 represents substituted or unsubstituted alkyl or aryl, and R7 represents substituted or unsubstituted alkyl, aryl, alkyl acyl or aroyl.

Abstract: Embodiments of the present disclosure provide methods for forming stair-like structures in manufacturing three dimensional (3D) stacking of semiconductor chips. In one example, a method includes performing a trimming process on a substrate to trim a patterned photoresist layer disposed on a film stack from a first width to a second width in a processing chamber, performing an etching process to etch a portion of the film stack exposed by the trimmed patterned photoresist layer, directing an optical signal to a surface of the trimmed patterned photoresist layer continuously during the trimming and the etching process, collecting a return reflected optical signal reflected from the trimmed patterned photoresist layer, determining a change of reflected intensify of the return reflected optical signal as collected; and calculating a photoresist thickness loss based on the change of the reflected intensity.

Abstract: Embodiments of the present disclosure provide methods for forming stair-like structures in manufacturing three dimensional (3D) stacking of semiconductor chips. In one example, a method includes performing a trimming process on a substrate to trim a patterned photoresist layer disposed on a film stack from a first width to a second width in a processing chamber, performing an etching process to etch a portion of the film stack exposed by the trimmed patterned photoresist layer, directing an optical signal to a surface of the trimmed patterned photoresist layer continuously during the trimming and the etching process, collecting a return reflected optical signal reflected from the trimmed patterned photoresist layer, determining a change of reflected intensify of the return reflected optical signal as collected; and calculating a photoresist thickness loss based on the change of the reflected intensity.

Abstract: Embodiments of the present disclosure provide methods for forming stair-like structures with accurate profiles control in manufacturing three dimensional (3D) stacking of semiconductor chips using precise photoresist trimming process endpoint control. In one example, a method of determining a photoresist trimming endpoint for forming stair-like structures on a substrate includes performing a trimming process on a substrate to trim a patterned photoresist layer disposed on a film stack from a first width to a second width in a processing chamber, wherein the patterned photoresist layer exposes a portion of the film stack uncovered by the patterned photoresist layer during the trimming process, directing an optical signal to a surface of the patterned photoresist layer while trimming the patterned photoresist layer, collecting a return reflected optical signal reflected from the photoresist layer, and determining a trimming endpoint by analyzing the return optical signal reflected from the photoresist layer.

Abstract: Monitoring of a pulsed plasma is described using an optical sensor. In one example, the invention includes receiving light emitted by a pulsed plasma in a semiconductor plasma processing chamber, sampling the received light at a sampling rate higher than a pulse rate of the pulsed plasma, wherein the sampled light has a periodic amplitude waveform and the sampling rate is higher than the period of the amplitude waveform, accumulating multiple sampled waveforms to form a mean waveform, and transmitting characteristics of the mean waveform to a chamber control tool.

Abstract: Monitoring of a pulsed plasma is described using an optical sensor. In one example, the invention includes receiving light emitted by a pulsed plasma in a semiconductor plasma processing chamber, sampling the received light at a sampling rate higher than a pulse rate of the pulsed plasma, wherein the sampled light has a periodic amplitude waveform and the sampling rate is higher than the period of the amplitude waveform, accumulating multiple sampled waveforms to form a mean waveform, and transmitting characteristics of the mean waveform to a chamber control tool.

Abstract: In some embodiments, a method of controlling a photoresist trimming process in a semiconductor manufacturing process may include forming a photoresist layer atop a first surface of a substrate, wherein the photoresist layer comprises a lower layer having a first pattern to be etched into the first surface of the substrate, and an upper layer having a second pattern that is not etched into the first surface of the substrate; trimming the photoresist layer in a direction parallel to the first surface of the substrate; measuring a trim rate of the second pattern using an optical measuring tool during the trimming process; and correlating the trim rate of the second pattern to a trim rate of the first pattern to control the trim rate of the first pattern during the trimming process.

Abstract: Embodiments of the present disclosure provide methods for forming stair-like structures with accurate profiles control in manufacturing three dimensional (3D) stacking of semiconductor chips using precise photoresist trimming process endpoint control. In one example, a method of determining a photoresist trimming endpoint for forming stair-like structures on a substrate includes performing a trimming process on a substrate to trim a patterned photoresist layer disposed on a film stack from a first width to a second width in a processing chamber, wherein the patterned photoresist layer exposes a portion of the film stack uncovered by the patterned photoresist layer during the trimming process, directing an optical signal to a surface of the patterned photoresist layer while trimming the patterned photoresist layer, collecting a return reflected optical signal reflected from the photoresist layer, and determining a trimming endpoint by analyzing the return optical signal reflected from the photoresist layer.

Abstract: In some embodiments, a method of controlling a photoresist trimming process in a semiconductor manufacturing process may include forming a photoresist layer atop a first surface of a substrate, wherein the photoresist layer comprises a lower layer having a first pattern to be etched into the first surface of the substrate, and an upper layer having a second pattern that is not etched into the first surface of the substrate; trimming the photoresist layer in a direction parallel to the first surface of the substrate; measuring a trim rate of the second pattern using an optical measuring tool during the trimming process; and correlating the trim rate of the second pattern to a trim rate of the first pattern to control the trim rate of the first pattern during the trimming process.

Abstract: Methods and apparatus for semiconductor manufacturing process monitoring and control are provided herein. In some embodiments, apparatus for substrate processing may include a process chamber for processing a substrate in an inner volume of the process chamber; a radiation source disposed outside of the process chamber to provide radiation at a frequency of about 200 GHz to about 2 THz into the inner volume via a dielectric window in a wall of the vacuum process chamber; a detector to detect the signal after having passed through the inner volume; and a controller coupled to the detector and configured to determine the composition of species within the inner volume based upon the detected signal.

Abstract: A method and apparatus for monitoring an etch process. The etch process may be monitored using measurement information (e.g., critical dimensions (CD), layer thickness, and the like) provided ex-situ with respect to the etch process in combination with in-situ monitoring (e.g., spectroscopy, interferometry, scatterometry, reflectometry, and the like) performed during the etch process. The ex-situ measurement information in combination with the in-situ monitoring may be used to monitor for example, an endpoint of an etch process, an etch depth profile of a feature formed on a substrate, fault detection of an integrated circuit manufacturing process, and the like.