Abstract: A Peripheral Component Interconnect Express (PCIe) data transmission method includes a first node that obtains a transaction layer packet (TLP). The TLP includes a TLP header, a TLP extension header, and data. The TLP header includes a type field, an Fmt field, and a reserved bit, and where the type field, the Fmt field, the reserved bit, and the TLP extension header indicate a data type of the data and at least one piece of attribute information corresponding to the data type such that, information, the data type and the at least one piece of the attribute information, to transmit the data is indicated using the type field, the Fmt field, the reserved bit, and the TLP extension header in the TLP.

Abstract: The available transmission resources on a downlink-shared channel are divided into resource blocks, each resource block comprising a predetermined number of sub-carriers during a predetermined time period. The resource blocks are subdivided into localized resource blocks and distributed resource blocks. A user requiring sufficient resources can be allocated a plurality of said localized resource blocks. A user who would require only a small number of said localized resource blocks can instead be allocated subunits of a plurality of said distributed resource blocks.

Abstract: This application provides a radar signal processing method and apparatus, which are applicable to the waveform design of a millimeter-wave radar. The radar signal processing method is applicable to an apparatus, for example, a millimeter-wave radar or a chip system inside the millimeter-wave radar, and the method includes: transmitting a first radar signal on a first frequency band; transmitting a second radar signal on a second frequency band; receiving a first reflected signal and a second reflected signal, where the first reflected signal is an electromagnetic wave reflected by a target object in response to the first radar signal, and the second reflected signal is an electromagnetic wave reflected by the target object in response to the second radar signal; and obtaining at least one of range information, velocity information, and angle information of the target object.

Abstract: A magnetoresistive memory cell includes a first electrode, a second electrode that is spaced from the first electrode, a magnetic tunnel junction layer stack located between the first electrode and the second electrode, the magnetic tunnel junction layer stack containing, from one side to another, a reference layer having a fixed reference magnetization direction, a tunnel barrier layer comprising a dielectric material, and a free layer, and an asymmetric magnetoresistance layer located between the magnetic tunnel junction layer stack and one of the first electrode and the second electrode.

Abstract: A method for forming a complex shape three-dimensional ceramic article by printing a first layer of a first material having a first fraction of first ceramic particles and a first fraction of a first polymeric ceramic precursor. A second layer is printed such that it is at least partially disposed on the first layer of a second material having a second fraction of second ceramic particles and a second fraction of a second polymeric ceramic precursor. A composite of the first layer and the second layer is heated at a temperature sufficient to decompose the first and second polymeric ceramic precursors and sinter the article. During the sintering process, the first and second layers with different fractions of ceramic particles undergo different degrees of shrinkage, resulting in a tuneable mismatch of the bilayer structure and accurately achieving a targeted geometry.

Abstract: A memory array is provided that includes a plurality of word lines and a plurality of bit lines, and a plurality of memory cells each including a corresponding magnetic memory element coupled in series with a corresponding selector element. Each memory cell is coupled between one of the word lines and one of the bit lines. Each memory cell has a half-pitch F, and comprises an area between 2F2 and 4F2.

Abstract: A magnetoresistive memory cell includes a first electrode, a second electrode that is spaced from the first electrode, a magnetic tunnel junction layer stack located between the first electrode and the second electrode, the magnetic tunnel junction layer stack containing, from one side to another, a reference layer having a fixed reference magnetization direction, a tunnel barrier layer comprising a dielectric material, and a free layer, and an asymmetric magnetoresistance layer located between the magnetic tunnel junction layer stack and one of the first electrode and the second electrode.

Abstract: A short-range communication method and apparatus are applied to the field of short-range communication, particularly related to scenarios such as smart driving, smart manufacturing, and can establish time-frequency synchronization between nodes in an entire network. The method includes: A first node receives at least one piece of node information from at least one node; and the first node controls the first node to establish time-frequency synchronization with a second node that is in the at least one node and that belongs to a second synchronization area, where node information from the second node includes synchronization information of the second synchronization area, and the synchronization information indicates at least one of a node identifier, a synchronization status, or a synchronization direction between nodes in the second synchronization area. This solution may be further used to improve an autonomous driving or advanced driver assistance system ADAS capability.

Abstract: An apparatus determines a timing offset of a first carrier and a second carrier. The timing offset is an offset between timing of downlink communication of the first carrier and timing of uplink communication of the second carrier. The first carrier is a carrier using a first radio access technology (RAT), and the second carrier is an uplink frequency division duplex (FDD) carrier using the first RAT and a second RAT. The apparatus sends first indication information to a terminal. The first indication information indicates the timing offset, and the timing offset is used to determine the timing of the second carrier.

Abstract: A device structure includes first electrically conductive lines, second electrically conductive lines that are vertically spaced apart from the first electrically conductive lines, a two-dimensional array of magnetic tunnel junctions located between the first electrically conductive lines and the second electrically conductive lines, and a two-dimensional array of selector elements located in series with the two-dimensional array of magnetic tunnel junctions. Each of the magnetic tunnel junctions includes a respective reference layer, a respective nonmagnetic tunnel barrier layer, and a respective free layer, and has a respective pair of first tapered planar sidewalls laterally extending along a first horizontal direction and a respective pair of second tapered planar sidewalls laterally extending along a second horizontal direction.

Abstract: A spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) device includes a SOT MRAM cell containing a first two terminal selector element, a nonmagnetic metallic assist plate, and a magnetic tunnel junction located between the first two terminal selector element and the nonmagnetic metallic assist plate, and a circuit selection element selected from a transistor or a second two terminal selector element electrically connected to the nonmagnetic metallic assist plate of the SOT MRAM cell.

Abstract: Selector material layers are formed over the first electrically conductive lines, and magnetic tunnel junction material layers are formed over the selector material layers. The magnetic tunnel junction material layers are patterned into a two-dimensional array of magnetic tunnel junction (MTJ) pillar structures. A dielectric spacer material layer is deposited over the two-dimensional array of MTJ pillar structures. The dielectric spacer material layer and the selector material layers are anisotropically etched. Patterned portions of the selector material layers include a two-dimensional array of selector-containing pillar structures. Second electrically conductive lines are formed over the two-dimensional array of MTJ pillar structures.

Abstract: A method of forming a memory device includes forming vertical stacks each including a respective first electrically conductive line and a respective selector rail over a substrate, such that the vertical stacks laterally extend along a first horizontal direction and are laterally spaced apart from each other along a second horizontal direction, forming magnetic tunnel junction material layers over the vertical stacks, and patterning the magnetic tunnel junction material layers and an upper portion of each of the selector rails to form a two-dimensional array of magnetic tunnel junctions and periodic notches at least in an upper portion of each of the selector rails.

Abstract: A first access network device determines a timing offset of a first carrier and a second carrier. The timing offset is an offset between timing of downlink communication of the first carrier and timing of uplink communication of the second carrier. The first carrier is a carrier using a first radio access technology (RAT), and the second carrier is an uplink frequency division duplex (FDD) carrier using the first RAT and a second RAT. The first access network device sends first indication information to a terminal. The first indication information indicates the timing offset, and the timing offset is used to determine the timing of the second carrier. Based on this scheme, the terminal can use a shared frequency band resource of LTE, thereby improving resource utilization.

Abstract: Disclosed are a soft bistable magnetic actuator, a fabrication method thereof, a fatigue testing device, and an auto underwater vehicle. The method for fabricating the soft bistable magnetic actuator includes the following operations: casting a soft precursor by injection molding, wherein the soft precursor consists of a soft deformable portion and a soft peripheral portion surrounded, the soft deformable portion is made of magnetic particles and polymer, and the soft peripheral portion is made of a magnetic particle, a mixture of organic liquid, and polymer; and extracting the organic liquid by an organic solvent shrinks the soft peripheral portion, buckles the soft deformable portion towards one side.

Abstract: A method for forming a complex shape three-dimensional ceramic article by printing a first layer of a first material having a first fraction of first ceramic particles and a first fraction of a first polymeric ceramic precursor. A second layer is printed such that it is at least partially disposed on the first layer of a second material having a second fraction of second ceramic particles and a second fraction of a second polymeric ceramic precursor. A composite of the first layer and the second layer is heated at a temperature sufficient to decompose the first and second polymeric ceramic precursors and sinter the article. During the sintering process, the first and second layers with different fractions of ceramic particles undergo different degrees of shrinkage, resulting in a tuneable mismatch of the bilayer structure and accurately achieving a targeted geometry.

Abstract: A memory device includes a cross-point array of spin-torque transfer MRAM cells. First rail structures laterally extend along a first horizontal direction. Each of the first rail structures includes a vertical stack including, from bottom to top, a first electrically conductive line, a reference layer having a fixed magnetization direction, and a tunnel barrier layer. Second rail structures laterally extend along a second horizontal direction. Each of the second rail structures includes a second electrically conductive line that overlies the first rail structures. A two-dimensional array of pillar structures is located between a respective one of the first rail structures and a respective one of the second rail structures. Each of the pillar structures includes a free layer having energetically stable magnetization orientations that are parallel or antiparallel to the fixed magnetization direction.

Abstract: A magnetic tunnel junction may include a platinum-containing layer including at least one of Ir, Hf or Ru in contact with a free layer, or a combination of a platinum layer and a Hf or Ir layer formed on opposite sides of a free layer.

Abstract: A navigation method is disclosed. The method includes: obtaining first information including reference position information of the first device and/or satellite-related information, and determining a position of the first device based on the first information; and navigating the first device based on the position of the first device. In embodiments of this application, the first device obtains the first information, determines the position of the first device based on the first information, and then navigates the first device based on the position of the first device. The first information includes the reference position information of the first device and/or the satellite-related information, to help the first device quickly perform positioning or satellite searching, thereby improving efficiency of the first device in restoring navigation.