Abstract: A voice communication method, a voice communication apparatus, and a voice communication system are disclosed. The method includes: at a transmitting side, obtaining voice information; determining whether the voice information is uttered by a preset user, and transmitting the voice information to a peer device if it is determined that the voice information is uttered by the preset user, and prohibiting the transmission of the voice information otherwise; and at a receiving side, receiving voice information transmitted from a peer device; collecting a first environmental information, and determining whether the first environmental information meets a voice output condition; outputting the voice information if it is determined that the first environmental information meets the voice output condition, and prohibiting the output of the voice information otherwise.

Abstract: An organic thin film transistor includes a transparent base substrate and a transparent gate layer formed on the transparent base substrate. A gate insulating layer includes an oxidized inorganic sub-layer and a non-oxidized organic sub-layer formed on the transparent gate layer. A source electrode and a drain electrode are buried within the non-oxidized organic sub-layer. Each of the source electrode and the drain electrode has a bottom side, and the bottom side surface of each of the source electrode and the drain electrode faces the transparent gate layer and contacts the non-oxidized organic sub-layer. The transparent gate layer is buried within the oxidized inorganic sub-layer, and the oxidized inorganic sub-layer covers a top surface and side surfaces of the transparent gate layer.

Abstract: In accordance with various embodiments of the disclosed subject matter, an organic thin film transistor, and a fabricating method thereof are provided. In some embodiments, the method for forming an organic thin film transistor (OTFT), comprising: forming a transparent gate layer on a transparent base substrate; forming a first initial silicone polymer layer on the transparent gate layer; and performing an oxidization process to partially oxidize the first initial silicone polymer layer to form a gate insulating layer, including an oxidized inorganic sub-layer that contacts the transparent gate layer, and a non-oxidized organic sub-layer.

Abstract: A display substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of the display substrate includes: forming light emitting units of at least two colors on a base substrate, which includes: forming a first electrode, a light emitting layer and a second electrode on the base substrate. An electrode sub-layer and a transparent structure are formed on the base substrate to form the first electrode. A first transparent conductive layer, a transparent etching barrier layer and a second transparent conductive layer are formed on a side of the electrode sub-layer away from the base substrate to form the transparent structure of the first color light emitting unit. An etching rate of the first transparent conductive layer and an etching rate of the second transparent conductive layer are substantially identical, and thicknesses of transparent structures in different light emitting units are different.

Abstract: An OLED device and a method of preparing the same are provided, the OLED device including: a substrate; a first source electrode on the substrate, the first source electrode having a first side surface; a first insulating layer on the first source electrode, the first insulating layer having a second side surface intersecting with an upper surface of the first source electrode and the first side surface of the first source electrode, with at least one of an angle between the first side surface and the upper surface of the substrate and an angle between the second side surface and the upper surface of the substrate being an acute angle; an active layer on the substrate, the active layer covering the first side surface and the second side surface; a gate insulating layer on the active layer; an anode on the gate insulating layer; a light emitting functional layer on the anode; and a cathode on the light emitting functional layer, the cathode including a first drain region covering the first insulating layer and

Abstract: A sputtering system and a deposition method are provided. The sputtering system includes at least two sputtering chambers. Each of the at least two sputtering chambers includes a plurality of targets separated from each other and a plurality of target pedestals. Each of the plurality of targets is mounted on a corresponding target pedestal of the plurality of target pedestals, and a gap between two adjacent targets of the plurality of targets has a width sufficient to accommodate at least one of the plurality of targets.

Abstract: The present disclosure provides a gas screening film including at least one gas screening element, each of the at least one gas screening element includes a transistor including a gate, an insulation spacing layer, a first electrode, a semiconductor nanosheet separation layer and a second electrode, and the insulation spacing layer is disposed between the gate and the semiconductor nanosheet separation layer. The present disclosure further provides a manufacturing method of the gas screening film and a face mask. The gas screening film can screen and separate various different gases as necessary.

Abstract: A sterilization structure, a sterilization board, and a display device are disclosed. The sterilization structure includes an active layer, wherein, one surface of the active layer has an exposed region, and a material of the active layer includes a laser-induced graphene material.

Abstract: A thin film transistor and a manufacture method thereof, an array substrate and a manufacture method thereof are provided. The manufacture method of the thin film transistor includes: providing a base substrate; and forming a gate electrode, a first electrode, a second electrode and a semiconductor layer of the thin film transistor on the base substrate. At least one of the gate electrode, the first electrode and the second electrode includes N portions that are stacked in a direction perpendicular to the base substrate, adjacent two of the N portions are in direct contact with each other, and N is a positive integer more than or equal to 2. The method includes: performing N patterning processes to respectively form the N portions.

Abstract: A fabrication method of a patterned metal film layer, including: sequentially depositing a first metal layer and a photoresist on a substrate; forming a first patterned photoresist in the photoresist retaining area; etching the first metal layer, and removing a part of the first metal layer having a first thickness and located in an edge area of the photoresist retaining area and in the photoresist removing area, to form a second metal layer; processing the first patterned photoresist to form a second patterned photoresist; etching and removing a part, which is not in contact with the second patterned photoresist, of the second metal layer on the substrate to form a patterned metal film layer.

Abstract: In an embodiment, there is provided a method of manufacturing a thin-film transistor. The method includes steps of: forming a gate, a gate insulator layer and an active layer on a base substrate, wherein, the gate and the active layer are provided at upper and lower sides of the gate insulator layer, respectively, and the active layer contains impurity ions therein; and, while implementing an annealing on the active layer, applying a voltage between the active layer and the gate to generate an electrical field therebetween, a direction of the electrical field being configured such that the impurity ions move from the active layer into the gate insulator layer. Meanwhile, there are also provided a thin-film transistor, an array substrate and a display apparatus.

Abstract: A method for fabricating a contact hole of an array substrate, an array substrate and a display device are disclosed, the method includes: coating a topmost layer with a first photoresist coating, exposing but not developing a part of the first photoresist coating, corresponding to a first contact hole, in an exposure process; coating the first photoresist coating with a second photoresist coating, exposing a part of the second photoresist coating, corresponding to the first contact hole, in an exposure process; developing and removing exposed parts of the first and second photoresist coatings, wherein a size of a removed part of the second photoresist coating, corresponding to the first contact hole, is smaller than a size of a removed part of the first photoresist coating, corresponding to the first contact hole; and removing parts of functional film layers, corresponding to the first contact hole, to form the first contact hole.

Abstract: Embodiments of the present disclosure provide an array substrate and a method of manufacturing the same and a display pane. The array substrate includes: a substrate, and a light shielding metal layer, a buffer layer, a thin film transistor disposed on the substrate in order. The thin film transistor includes a gate electrode, an active layer, and a source electrode and a drain electrode. The buffer layer includes a first via hole that exposes the light shielding metal layer. The source electrode is electrically connected to the light shielding metal layer through the conductive structure in the first via hole.

Abstract: A voice communication method, a voice communication apparatus, and a voice communication system are disclosed. The method includes: at a transmitting side, obtaining voice information; determining whether the voice information is uttered by a preset user, and transmitting the voice information to a peer device if it is determined that the voice information is uttered by the preset user, and prohibiting the transmission of the voice information otherwise; and at a receiving side, receiving voice information transmitted from a peer device; collecting a first environmental information, and determining whether the first environmental information meets a voice output condition; outputting the voice information if it is determined that the first environmental information meets the voice output condition, and prohibiting the output of the voice information otherwise.

Abstract: A valve clamp for treating the cardiac valve regurgitation. The valve clamp includes a first clamp part, a second clamp part, and a connecting part. The first clamp part has the first clamping arms. The second clamp part has a corresponding number of second clamping arms. The first clamping arm and the second clamping arm can clip an object therebetween through the interaction force generated by closing and pushing against each other. Moreover, the valve clamp can also include a closed ring, which is sleeved outside the periphery of the first clamp part and the periphery of the second clamp part, such that the clamping arms can close as needed, and the clamping is tighter. The valve clamp has the advantages of a minimally invasive implantation, a simple manufacture, a low difficulty of operation, good effects, etc.

Abstract: A display substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of the display substrate includes: forming light emitting units of at least two colors on a base substrate, which includes: forming a first electrode, a light emitting layer and a second electrode on the base substrate. An electrode sub-layer and a transparent structure are formed on the base substrate to form the first electrode. A first transparent conductive layer, a transparent etching barrier layer and a second transparent conductive layer are formed on a side of the electrode sub-layer away from the base substrate to form the transparent structure of the first color light emitting unit. An etching rate of the first transparent conductive layer and an etching rate of the second transparent conductive layer are substantially identical, and thicknesses of transparent structures in different light emitting units are different.

Abstract: An OLED device and a method of preparing the same are provided, the OLED device including: a substrate; a first source electrode on the substrate, the first source electrode having a first side surface; a first insulating layer on the first source electrode, the first insulating layer having a second side surface intersecting with an upper surface of the first source electrode and the first side surface of the first source electrode, with at least one of an angle between the first side surface and the upper surface of the substrate and an angle between the second side surface and the upper surface of the substrate being an acute angle; an active layer on the substrate, the active layer covering the first side surface and the second side surface; a gate insulating layer on the active layer; an anode on the gate insulating layer; a light emitting functional layer on the anode; and a cathode on the light emitting functional layer, the cathode including a first drain region covering the first insulating layer and

Abstract: Provided are a light source structure and a light-emitting device. The light source structure includes a power supply unit, a field effect unit and a light-emitting unit, wherein the power supply unit supplies power to the field effect unit and the light-emitting unit; and the field effect unit includes a vibrator unit that receives sound waves from the outside to generate vibration, so that the field effect unit generates a current varying along with the vibration, and supplies the varying current to the light-emitting unit to generate light with variable light intensity.

Abstract: The present disclosure relates to a substrate, a method for fabricating the same and an organic light emitting diode display device. The substrate includes a metal foil. A metal material used for the metal foil is capable of being anodized and a plurality of concave light trapping microstructures is formed on a surface of the metal foil.

Abstract: Embodiments of the present disclosure relate to the field of electronic sensing technologies, and provide a chemical sensing unit, a chemical sensor, and a chemical sensing device. The chemical sensing unit includes a thin film transistor arranged on a substrate, and a light emitting diode coupled to the thin film transistor. The thin film transistor includes a semiconductor active layer, a source, and a drain, and the semiconductor active layer is mainly composed of a chemically sensitive semiconductor material. The chemical sensing unit is provided with a via hole in a region between the source and the drain, such that the semiconductor active layer is exposed at a position corresponding to the via hole. The light emitting diode includes a first electrode, a light-emitting functional layer, and a second electrode which are stacked in sequence, wherein the first electrode is coupled to the drain.