Abstract: Embodiments of the present disclosure relate to the field of electronic sensing technologies, and provide a chemical sensing unit, a chemical sensor, and a chemical sensing device. The chemical sensing unit includes a thin film transistor arranged on a substrate, and a light emitting diode coupled to the thin film transistor. The thin film transistor includes a semiconductor active layer, a source, and a drain, and the semiconductor active layer is mainly composed of a chemically sensitive semiconductor material. The chemical sensing unit is provided with a via hole in a region between the source and the drain, such that the semiconductor active layer is exposed at a position corresponding to the via hole. The light emitting diode includes a first electrode, a light-emitting functional layer, and a second electrode which are stacked in sequence, wherein the first electrode is coupled to the drain.

Abstract: The present disclosure provides a sensing circuit and a voltage compensation method. With the sensing circuit according to the present disclosure, a capacitance value of a capacitor to be measured on an internal sensing line of a display panel is determined, a compensation voltage for the internal sensing line is determined according to the capacitance value of the capacitor to be measured, and then voltage compensation is performed on the internal sensing line according to the compensation voltage corresponding to the capacitor to be measured.

Abstract: A thin film transistor (TFT), a manufacturing method, an array substrate, a display panel, and a device is disclosed. The TFT includes a hydrogen-containing buffer layer located on a substrate; an oxide semiconductor layer located on the buffer layer, wherein the oxide semiconductor layer includes a conductor region and a semiconductor region; a source or drain located on the conductor region, and electrically connected to the conductor region; and a gate structure located on the semiconductor region.

Abstract: The present disclosure discloses a TFT, a manufacturing method, an array substrate, a display panel, and a device. The TFT includes a hydrogen-containing buffer layer located on a substrate; an oxide semiconductor layer located on the buffer layer, wherein the oxide semiconductor layer includes a conductor region and a semiconductor region; a source or drain located on the conductor region, and electrically connected to the conductor region; and a gate structure located on the semiconductor region.

Abstract: Embodiments of the present disclosure provide an OLED substrate and a manufacturing method thereof and a display device. The OLED substrate includes: a base substrate; a first electrode and a second electrode which are on the base substrate; an organic material functional layer between the first electrode and the second electrode; and an auxiliary heat dissipation layer which is at a light exit side of the organic material functional layer and is in contact with the organic material functional layer. The auxiliary heat dissipation layer includes a metal heat dissipation portion and a metal oxide light transmission portion.

Abstract: A display substrate, a manufacturing method thereof, and a display device are provided, and the manufacturing method includes: providing a base substrate; forming a pixel definition layer on the base substrate; oxidizing the pixel definition layer, in which a surface of the pixel definition layer distal to the base substrate is partially oxidized, such that the pixel definition layer includes a main layer proximal to the base substrate and an oxide layer distal to the base substrate; curing and molding the pixel definition layer, and patterning the pixel definition layer to form a pixel definition layer pattern.

Abstract: The present disclosure discloses a TFT, a manufacturing method, an array substrate, a display panel, and a device. The TFT includes a hydrogen-containing buffer layer located on a substrate; an oxide semiconductor layer located on the buffer layer, wherein the oxide semiconductor layer includes a conductor region and a semiconductor region; a source or drain located on the conductor region, and electrically connected to the conductor region; and a gate structure located on the semiconductor region.

Abstract: The present disclosure relates to a substrate, a method for fabricating the same and an organic light emitting diode display device. The substrate includes a metal foil. A metal material used for the metal foil is capable of being anodized and a plurality of concave light trapping microstructures is formed on a surface of the metal foil.

Abstract: The present disclosure provides a sensing circuit and a voltage compensation method. With the sensing circuit according to the present disclosure, a capacitance value of a capacitor to be measured on an internal sensing line of a display panel is determined, a compensation voltage for the internal sensing line is determined according to the capacitance value of the capacitor to be measured, and then voltage compensation is performed on the internal sensing line according to the compensation voltage corresponding to the capacitor to be measured.

Abstract: The present disclosure provides an oxide TFT, a fabricating method therefor, an array substrate and a display device. The method for fabricating an oxide TFT includes: providing a substrate; successively forming a light shielding layer, a first insulating layer and a semiconductor layer on the substrate; successively forming a second insulating layer, a gate, and a third insulating layer on the semiconductor layer, wherein an orthographic projection of the second insulating layer on the substrate covers an orthographic projection of the semiconductor on the substrate; removing the second insulating layer and the third layer covering regions to be conducted of the semiconductor layer; processing the regions to be conducted by a conducting process to form conducted regions; and forming a first electrode and a second electrode on the conducted regions.

Abstract: A manufacturing method of a display substrate, a display substrate, and a display device are disclosed. The manufacturing method includes: forming an active layer; forming a gate insulation film layer, a gate film layer and a photoresist film layer; exposing the photoresist film layer to a light and developing the exposed photoresist film layer until the developed photoresist film layer has a thickness of 1.8-2.2 ?m and a slope angle not less than 70°; over-etching the gate film layer to form a gate electrode, an orthographic projection of the gate electrode being located within a region of an orthographic projection of the developed photoresist film layer; over-etching the gate insulation film layer by a gaseous corrosion method to form a gate insulation layer; peeling off the photoresist film layer remaining on a surface of the gate electrode; and performing a conductive treatment to the active layer.

Abstract: In an embodiment, there is provided a method of manufacturing a thin-film transistor. The method includes steps of: forming a gate, a gate insulator layer and an active layer on a base substrate, wherein, the gate and the active layer are provided at upper and lower sides of the gate insulator layer, respectively, and the active layer contains impurity ions therein; and, while implementing an annealing on the active layer, applying a voltage between the active layer and the gate to generate an electrical field therebetween, a direction of the electrical field being configured such that the impurity ions move from the active layer into the gate insulator layer. Meanwhile, there are also provided a thin-film transistor, an array substrate and a display apparatus.

Abstract: The present disclosure discloses a thin film transistor, an array substrate and their manufacturing methods, and a display apparatus. The method for manufacturing the thin film transistor of the present disclosure comprises a step of forming an insulation layer, wherein the step of forming the insulation layer further comprises forming a siloxane material layer, oxidizing the siloxane material layer such that an inorganic silicon film is formed on a surface of the siloxane material layer, and curing the oxidized siloxane material layer to obtain the insulation layer. In this disclosure, the outer layer of the insulation layer is an inorganic silicon film which is a commonly-used material for making the insulation layer in prior art, and the inner layer of the insulation layer is made of the siloxane material having a low dielectric constant and high chemical stability.

Abstract: Embodiments of the present disclosure provide an OLED substrate and a manufacturing method thereof and a display device. The OLED substrate includes: a base substrate; a first electrode and a second electrode which are on the base substrate; an organic material functional layer between the first electrode and the second electrode; and an auxiliary heat dissipation layer which is at a light exit side of the organic material functional layer and is in contact with the organic material functional layer. The auxiliary heat dissipation layer includes a metal heat dissipation portion and a metal oxide light transmission portion.

Abstract: The disclosure provides a thin film transistor, an array substrate, and a method for fabricating the same. An embodiment of the disclosure provides a method for fabricating a thin film transistor, the method including: forming a gate, a gate insulation layer, and an active layer above an underlying substrate successively; forming a patterned hydrophobic layer above the active layer, wherein the hydrophobic layer includes first pattern components, and orthographic projections of the first pattern components onto the underlying substrate overlap with a orthographic projection of a channel area at the active layer onto the underlying substrate; and forming a source and a drain above the hydrophobic layer, wherein the source and the drain are located respectively on two sides of a channel area, and in contact with the active layer.

Abstract: A display substrate, a manufacturing method thereof, and a display device are provided, and the manufacturing method includes: providing a base substrate; forming a pixel definition layer on the base substrate; oxidizing the pixel definition layer, in which a surface of the pixel definition layer distal to the base substrate is partially oxidized, such that the pixel definition layer includes a main layer proximal to the base substrate and an oxide layer distal to the base substrate; curing and molding the pixel definition layer, and patterning the pixel definition layer to form a pixel definition layer pattern.

Abstract: A method for fabricating a contact hole of an array substrate, an array substrate and a display device are disclosed, the method includes: coating a topmost layer with a first photoresist coating, exposing but not developing a part of the first photoresist coating, corresponding to a first contact hole, in an exposure process; coating the first photoresist coating with a second photoresist coating, exposing a part of the second photoresist coating, corresponding to the first contact hole, in an exposure process; developing and removing exposed parts of the first and second photoresist coatings, wherein a size of a removed part of the second photoresist coating, corresponding to the first contact hole, is smaller than a size of a removed part of the first photoresist coating, corresponding to the first contact hole; and removing parts of functional film layers, corresponding to the first contact hole, to form the first contact hole.

Abstract: A method for manufacturing a display panel, and a display device are disclosed. The method for manufacturing a display panel includes: providing a TFT substrate; dispersing graphene and metal nanowires in a hydrophilic solvent to form a hydrophilic conductive ink; applying the hydrophilic conductive ink onto the TFT substrate to form a composite electrode layer; forming, on the composite electrode layer, a pixel defining layer having a plurality of openings at least partially exposing the composite electrode layer; applying hydrophilic organic ink into the plurality of openings of the pixel defining layer to form an organic layer; drying the composite electrode layer and the organic layer to form a first electrode and an organic light emitting structure; and forming a second electrode on the organic light emitting structure and the pixel defining layer.

Abstract: A valve clamp for treating the cardiac valve regurgitation. The valve clamp includes a first clamp part, a second clamp part, and a connecting part. The first clamp part has the first clamping arms. The second clamp part has a corresponding number of second clamping arms. The first clamping arm and the second clamping arm can clip an object therebetween through the interaction force generated by closing and pushing against each other. Moreover, the valve clamp can also include a closed ring, which is sleeved outside the periphery of the first clamp part and the periphery of the second clamp part, such that the clamping arms can close as needed, and the clamping is tighter. The valve clamp has the advantages of a minimally invasive implantation, a simple manufacture, a low difficulty of operation, good effects, etc.

Abstract: A method for manufacturing a display panel, and a display device are disclosed. The method for manufacturing a display panel includes: providing a TFT substrate; dispersing graphene and metal nanowires in a hydrophilic solvent to form a hydrophilic conductive ink; applying the hydrophilic conductive ink onto the TFT substrate to form a composite electrode layer; forming, on the composite electrode layer, a pixel defining layer having a plurality of openings at least partially exposing the composite electrode layer; applying hydrophilic organic ink into the plurality of openings of the pixel defining layer to form an organic layer; drying the composite electrode layer and the organic layer to form a first electrode and an organic light emitting structure; and forming a second electrode on the organic light emitting structure and the pixel defining layer.