Abstract: Disclosed is a transistor having a base, a substrate, and a collector between the substrate and the base. The collector has a first region of a first thickness under the base and is made up of a first dopant type having a substantially constant doping concentration across the first thickness. A second region with a second thickness under the first region is made up of a second dopant type that is different from the first dopant type and has a substantially constant doping concentration across the second thickness. A third region with a third thickness under the second region is made up of the second dopant type with a graded doping concentration that is a function of increasing distance from the second region through the third thickness. An emitter is located over the base opposite the collector.

Abstract: Disclosed is a transistor having a base, a substrate, and a collector between the substrate and the base. The collector has a first region of a first thickness under the base and is made up of a first dopant type having a substantially constant doping concentration across the first thickness. A second region with a second thickness under the first region is made up of a second dopant type that is different from the first dopant type and has a substantially constant doping concentration across the second thickness. A third region with a third thickness under the second region is made up of the second dopant type with a graded doping concentration that is a function of increasing distance from the second region through the third thickness. An emitter is located over the base opposite the collector.

Abstract: A method of compensating a calibration for a vector network analyzer includes performing calibrations on at least a pair of ports to determine error terms associated with each port wherein at least one of the error terms is based upon selecting the reactance of the load standard from a set of potential values in a manner such that the reference reactance errors are reduced.

Abstract: A method of compensating a calibration for a vector network analyzer includes performing calibrations on at least a pair of ports to determine error terms associated with each port wherein at least one of the error terms is based upon selecting the reactance of the load standard from a set of potential values in a manner such that the reference reactance errors are reduced.

Abstract: The present invention relates to a probe for testing of integrated circuits or other microelectronic devices.

Abstract: The present invention relates to a method of assembling a probe for testing of integrated circuits or other microelectronic devices.

Abstract: The present invention relates to a probe tip assembly for testing of integrated circuits or other microelectronic devices. The probe tip assembly may include a plurality of independently flexible contact fingers extending from a support, each contact finger spaced apart from the other contact fingers, and each contact finger terminating in free space at an end distal from the support. A probe may be constructed by attaching the free ends of the contact fingers to electrical contacts on a circuit board and then removing the support from the contact fingers.

Abstract: A probe station for probing a test device has a chuck element for supporting the test device. An electrically conductive outer shield enclosure at least partially encloses such chuck element to provide EMI shielding therefor. An electrically conductive inner shield enclosure is interposed between and insulated from the outer shield enclosure and the chuck element, and at least partially encloses the chuck element.

Abstract: A probe measurement system for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies.

Abstract: The present invention relates to a probe for testing of integrated circuits or other microelectronic devices.

Abstract: A probe for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies may include a dielectric substrate that supports a signal path interconnecting test instrumentation and a probe tip and a ground path that shields both the signal oath and the probe tip.

Abstract: A probe for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies may include a dielectric substrate that supports a signal path interconnecting test instrumentation and a probe tip and a ground path that shields both the signal path and the probe tip.

Abstract: The present invention relates to a probe for testing of integrated circuits or other microelectronic devices.

Abstract: A direct current and a modulation signal are simultaneously applied to contact pads on a device under test, such as a laser diode, with a probe that reduces signal distortion and power dissipation by transmitting a modulated signal through an impedance matching resistor and transmitting of a direct current over a second signal path that avoids the impedance matching resistor.

Abstract: A probe measurement system having low, stable contact resistance for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies.

Abstract: A probe station for probing a test device has a chuck element for supporting the test device. An electrically conductive outer shield enclosure at least partially encloses such chuck element to provide EMI shielding therefor. An electrically conductive inner shield enclosure is interposed between and insulated from the outer shield enclosure and the chuck element, and at least partially encloses the chuck element.

Abstract: A direct current and a modulation signal are simultaneously applied to contact pads on a device under test, such as a laser diode, with a probe that reduces signal distortion and power dissipation by transmitting a modulated signal through an impedance matching resistor and transmitting of a direct current over a second signal path that avoids the impedance matching resistor.

Abstract: A probe assembly including a probe, a waveguide to transmission path transition, and a bias tee detachably connected to the probe.

Abstract: A direct current and a modulation signal are simultaneously applied to contact pads on a device under test, such as a laser diode, with a probe that reduces signal distortion and power dissipation by transmitting a modulated signal through an impedance matching resistor and transmitting of a direct current over a second signal path that avoids the impedance matching resistor.

Abstract: A probe measurement system for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies.