Abstract: A low friction horizontal probing fixture includes two rails of a base unit and two slide units respectively disposed on and being slidable along the rails. Each slide unit has a slide seat that is disposed adjacent to a respective one of the rails, rolling members that are connected to the slide seat and that are rollable on the respective rail so that the slide seat is movable along the respective rail, and a lock mechanism that is disposed on the slide seat and that is operable to position the slide seat relative to the respective rail. A guiding member is connected co-movably to the slide units.

Abstract: A capacitor structure and method of forming the capacitor structure is provided, including a providing a doped region of a substrate having a two-dimensional trench array with a plurality of segments defined therein. Each of the plurality of segments has an array of a plurality of recesses extending along the substrate, where the plurality of segments are rotationally symmetric about a center of the two-dimensional trench array. A first conducting layer is presented over the surface and a bottom and sidewalls of the recesses and is insulated from the substrate by a first dielectric layer. A second conducting layer is presented over the first conducting layer and is insulated by a second dielectric layer. First and second contacts respectively connect to an exposed top surface of the first conducting layer and second conducting layer. A third contact connects to the substrate within a local region to the capacitor structure.

Abstract: Various embodiments of the present application are directed towards an integrated chip (IC). The IC comprises a trench capacitor overlying a substrate. The trench capacitor comprises a plurality of capacitor electrode structures, a plurality of warping reduction structures, and a plurality of capacitor dielectric structures. The plurality of capacitor electrode structures, the plurality of warping reduction structures, and the plurality of capacitor dielectric structures are alternatingly stacked and define a trench segment that extends vertically into the substrate. The plurality of capacitor electrode structures comprise a metal component and a nitrogen component. The plurality of warping reduction structures comprise the metal component, the nitrogen component, and an oxygen component.

Abstract: An avatar carrier generating system for metaverse and method thereof are disclosed. Before a living body enters a metaverse, a sensing element senses the living body to generate a physiological feature, and after a real-name identity message is received, the real-name identity message and the physiological feature are converted into metadata compliant with a non-fungible token standard; the non-fungible token, which is owned by the living body, is generated on the blockchain based on the metadata. When the living body enters the metaverse, an avatar carrier for entering the metaverse is generated based on the metadata of the non-fungible token, and when the avatar carrier receives an identification request, the avatar carrier is permitted to provide at least one of the physiological feature and the real-name identity message, so as to achieve the effect of improving identifiability and authentication of the avatar carrier of the metaverse.

Abstract: Techniques and systems are provided for generating a three-dimensional facial model. For instance, a process can include: obtaining a frame, the frame including a face; obtaining a mesh 3D model of the face; generating facial texture information associated with the face based on the frame and the mesh 3D model; generating, based on the facial texture information, displacement map information; and applying the displacement map information to the mesh 3D model to generate a finetuned mesh 3D model.

Abstract: Techniques and systems are provided for generating a representation of a face. For instance, a process can include obtaining one or more images of a face. The process can further include generating an encoded expression representing an expression of the face, wherein predetermined characteristics of the face remain constant relative to the encoded expression. The process can further include mapping the encoded expression to a corresponding expression of a facial model. The process can further include generating the representation of the facial model based on the encoded expression.

Abstract: The disclosure discloses a method for preparing a nanoscale cationic hyperbranched starch-based gene carrier, which mainly includes the following steps: heating and gelatinizing a dextrin solution, then obtaining a highly branched cluster dextrin molecule having abundant short chains through hydrolysis and transglycosylation of starch branching enzymes, and then performing an etherification reaction to obtain cationic polymers with different degrees of substitution. The polymer is controllable in degradation, the highly branched structure thereof can reduce the requirement of the gene carrier on the high degree of substitution of cationic starch to a certain extent, and the cytotoxicity is obviously reduced. In addition, the polymer carrier can form a stable nanocomplex with a gene fragment, and has wide application in gene therapy as an efficient gene carrier.

Abstract: Systems and techniques are provided for synthesizing facial features of a three-dimensional (3D) facial model. For example, a process can include obtaining a first frame, the first frame including a first portion of a face; generating a first facial feature corresponding to the first portion of the face; obtaining a second frame, the second frame including a second portion of the face, wherein the second portion of the face at least partially overlaps the first portion of the face; generating a one-dimensional second facial feature corresponding to the second portion of the face; generating a set of weights based on the one-dimensional second facial feature; and applying the set of weights to the first facial feature to generate a weighted facial feature.

Abstract: An electronic package module and a method for fabrication of the same are provided. The method includes providing an electronic component assembly and a circuit substrate. The electronic component assembly includes two electronic components and a conductive structure. The electronic components are connected to each other through a conductive adhesive material, while the electronic components are connected to the conductive structure through another conductive adhesive material. A soldering material is formed on the circuit substrate, and the electronic component assembly is disposed on the soldering material. The melting points of the conductive adhesive materials are higher than the melting point of the soldering material. As a result, the conductive adhesive materials are prevented from failure during the soldering process, and thus the process yield is improved.

Abstract: Some implementations described herein provide techniques and apparatuses for an integrated circuit device including a trench capacitor structure that has a merged region. A material filling the merged region is different than a material that is included in electrode layers of the trench capacitor structure. Furthermore, the material filling the merged region includes a coefficient of thermal expansion and a modulus of elasticity that, in combination with the architecture of the trench capacitor structure, reduce thermally induced stresses and/or strains within the integrated circuit device relative to another integrated circuit device having a trench capacitor structure including a merged region and electrode layers of a same material.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a substrate comprising first opposing sidewalls defining a first trench and second opposing sidewalls defining a second trench laterally offset from the first trench. A stack of layers comprises a plurality of conductive layers and a plurality of dielectric layers alternatingly stacked with the conductive layers. The stack of layers comprises a first segment in the first trench and a second segment in the second trench. A first lateral distance between the first segment and the second segment aligned with a first surface of the substrate is greater than a second lateral distance between the first segment and the second segment below the first surface of the substrate.

Abstract: The present disclosure provides a preparation method of a medicinal oil for reducing a gastrointestinal reaction caused by sulforaphane (SFA) and sulforaphene. In the present disclosure, the medicinal oil includes the SFA and the sulforaphene that serve as active ingredients, and the SFA and the sulforaphene each have a weight percentage content of 0.1% to 50%. An auxiliary material vegetable oil for preparing the medicinal oil is one or a mixture of two or more selected from the group consisting of soybean oil, corn oil, peanut oil, sesame oil, cottonseed oil, linseed oil, castor oil, rapeseed oil, sunflower seed oil, camellia seed oil, and olive oil. The SFA, the sulforaphene, and the auxiliary material are mixed to prepare a capsule. The medicinal oil can be used to reduce the gastrointestinal reaction caused by the SFA and the sulforaphene.

Abstract: Versions of an application program are evaluated to protect a customer from a supply chain attack. The versions of the application program are executed in to identify behaviors exhibited by the versions of the application program, each of the behaviors including activities that perform computer operations. A behavior change is detected by identifying a behavior that is not common to the versions of the application program.

Abstract: Systems, apparatuses, and methods may provide for technology for forming a pre-offset platform on top of a substrate. A memory block is formed, where the memory block includes a staircase area and a memory array area located adjacent the staircase area. The memory array area includes a plurality of memory pillars extending into the memory block. The staircase area has a first height, the memory array area has a second height, and a tier expansion height is defined as a difference between the second height and the first height. The pre-offset platform is located between the substrate and the staircase area of the memory block. The pre-offset platform is oriented and arranged to offset the tier expansion height so that an upper surface of the staircase area and an upper surface of the memory array area are located in a same plane.

Abstract: Systems, methods, circuits, and apparatuses for managing integrated circuits in memory devices are provided. In one aspect, a system includes a semiconductor device configured to store data, and a controller communicatively coupled to the semiconductor device. The controller is configured to send, to the semiconductor device, an instruction requesting transmission of the data; in response to determining that a predetermined time duration has elapsed after sending the instruction, initiate transmission of a read enable signal to the semiconductor device; receive, from the semiconductor device, a data strobe signal; and, in response to determining that the data strobe signal has a frequency matching a frequency of the read enable signal, read the data from the semiconductor device.

Abstract: Various embodiments of the present application are directed towards an integrated chip (IC). The IC comprises a trench capacitor overlying a substrate. The trench capacitor comprises a plurality of capacitor electrode structures, a plurality of warping reduction structures, and a plurality of capacitor dielectric structures. The plurality of capacitor electrode structures, the plurality of warping reduction structures, and the plurality of capacitor dielectric structures are alternatingly stacked and define a trench segment that extends vertically into the substrate. The plurality of capacitor electrode structures comprise a metal component and a nitrogen component. The plurality of warping reduction structures comprise the metal component, the nitrogen component, and an oxygen component.

Abstract: In some embodiments, a semiconductor device is provided. The semiconductor device includes a gate electrode disposed on a substrate. Source/drain regions are disposed on or within the substrate along opposing sides of the gate electrode. A noise reducing component is arranged along an upper surface of the gate electrode and/or along an upper surface of the substrate over the source/drain regions. A cap layer covers the upper surface of the gate electrode and/or the upper surface of the substrate over the source/drain regions. An inter-level dielectric (ILD) is disposed over and along one or more sidewalls of the cap layer.

Abstract: Resistors and method of forming the same are provided. A device structure according to the present disclosure includes a substrate, a first intermetal dielectric (IMD) layer over the substrate, a resistor that includes a first resistor layer over the first IMD layer, a second resistor layer over the first resistor layer, and a third resistor layer over the second resistor layer, a second IMD layer over the first IMD layer and the resistor, a first contact via extending through the second IMD layer and the third resistor layer and terminating in the first resistor layer, and a second contact via extending through the second IMD layer and the third resistor layer and terminating in the first resistor layer.