Abstract: A semiconductor process is described. A silicon-phosphorus (SiP) epitaxial layer is formed serving as a source/drain (S/D) region. A crystalline metal silicide layer is formed directly on the SiP epitaxial layer and thus prevents oxidation of the SiP epitaxial layer. A contact plug is formed over the crystalline metal silicide layer.

Abstract: A semiconductor process is described. A silicon-phosphorus (SiP) epitaxial layer is formed serving as a source/drain (S/D) region. A crystalline metal silicide layer is formed directly on the SiP epitaxial layer and thus prevents oxidation of the SiP epitaxial layer. A contact plug is formed over the crystalline metal silicide layer.

Abstract: A semiconductor process for forming a plug includes the following steps. A dielectric layer having a recess is formed on a substrate. A titanium layer is formed to conformally cover the recess. A first titanium nitride layer is formed to conformally cover the titanium layer, thereby the first titanium nitride layer having first sidewall parts. The first sidewall parts of the first titanium nitride layer are pulled back, thereby second sidewall parts being formed. A second titanium nitride layer is formed to cover the recess. Moreover, a semiconductor structure formed by said semiconductor process is also provided.

Abstract: A semiconductor process for forming a plug includes the following steps. A dielectric layer having a recess is formed on a substrate. A titanium layer is formed to conformally cover the recess. A first titanium nitride layer is formed to conformally cover the titanium layer, thereby the first titanium nitride layer having first sidewall parts. The first sidewall parts of the first titanium nitride layer are pulled back, thereby second sidewall parts being formed. A second titanium nitride layer is formed to cover the recess. Moreover, a semiconductor structure formed by said semiconductor process is also provided.

Abstract: The present invention utilizes a barrier layer in the contact hole to react with an S/D region to form a silicide layer. After forming the silicide layer, a directional deposition process is performed to form a first metal layer primarily on the barrier layer at the bottom of the contact hole, so that very little or even no first metal layer is disposed on the barrier layer at the sidewall of the contact hole. Then, the second metal layer is deposited from bottom to top in the contact hole as the deposition rate of the second metal layer on the barrier layer is slower than the deposition rate of the second metal layer on the first metal layer.

Abstract: A semiconductor process is described. A silicon-phosphorus (SiP) epitaxial layer is formed serving as a source/drain (S/D) region. A crystalline metal silicide layer is formed directly on the SiP epitaxial layer and thus prevents oxidation of the SiP epitaxial layer. A contact plug is formed over the crystalline metal silicide layer.

Abstract: A method of forming a contact structure is provided. A silicon-containing substrate is provided with a composite dielectric layer formed thereon. An opening penetrates through the composite dielectric layer and exposes a portion of the source/drain region. A titanium nitride layer is formed in the opening, and the titanium nitride layer is in contact with the exposed portion of the source/drain region. The titanium nitride layer is annealed, so that the bottom portion of the titanium nitride layer is partially transformed into a titanium silicide layer. A conductive layer is formed to fill up the opening.

Abstract: A method of forming a contact structure is provided. A silicon-containing substrate is provided with a composite dielectric layer formed thereon. An opening penetrates through the composite dielectric layer and exposes a portion of the source/drain region. A titanium nitride layer is formed in the opening, and the titanium nitride layer is in contact with the exposed portion of the source/drain region. The titanium nitride layer is annealed, so that the bottom portion of the titanium nitride layer is partially transformed into a titanium silicide layer. A conductive layer is formed to fill up the opening.

Abstract: A semiconductor process for forming a plug includes the following steps. A dielectric layer having a recess is formed on a substrate. A titanium layer is formed to conformally cover the recess. A first titanium nitride layer is formed to conformally cover the titanium layer, thereby the first titanium nitride layer having first sidewall parts. The first sidewall parts of the first titanium nitride layer are pulled back, thereby second sidewall parts being formed. A second titanium nitride layer is formed to cover the recess. Moreover, a semiconductor structure formed by said semiconductor process is also provided.

Abstract: Provided are aligned carbon nanotubes for a fuel cell having a large surface area, a nanocomposite that includes the aligned carbon nanotubes loaded with highly dispersed nanoparticles of a metallic catalyst, methods of producing the carbon nanotubes and the nanocomposite, and a fuel cell including the nanocomposite. In the nanocomposite, nanoparticles of the metallic catalyst are uniformly distributed on external walls of the nanotubes. A fuel cell including the nanocomposite exhibits better performance.

Abstract: Sidewall tracing nanoprobes, in which the tip shape of the nanoprobe Is altered so that the diameter or width of the very tip of the probe is wider than the diameter of the supporting stem. Such side protruding probe tips are fabricated by a subtractive method of reducing the stem diameter, an additive method of increasing the tip diameter, or sideway bending of the probe tip. These sidewall tracing nanoprobes are useful for inspection of semiconductor devices, especially to quantitatively evaluate the defects on the side wall of trenches or via holes.

Abstract: A mechanically stable and oriented scanning probe tip comprising a carbon nanotube having a base with a gradually decreasing diameter, with a sharp tip at the probe tip. Such a tip or an array of tips is produced by depositing a catalyst metal film on a substrate, depositing a carbon dot on the catalyst metal film, etching away the catalyst metal film not masked by the carbon dot, removing the carbon dot from the catalyst metal film to expose the catalyst metal film and growing a carbon nanotube probe tip on the catalyst metal film. The carbon probe tips can be straight, angled, or sharply bent and have various technical applications.

Abstract: A mechanically stable and oriented scanning probe tip comprising a carbon nanotube having a base with gradually decreasing diameter, with a sharp tip at the probe tip. Such a tip or an array of tips is produced by depositing a catalyst metal film on a substrate (10 & 12 in FIG. 1(a)), depositing a carbon dot (14 in FIG. 1(b)) on the catalyst metal film, etching away the catalyst metal film (FIG. 1(c)) not masked by the carbon dot, removing the carbon dot from the catalyst metal film to expose the catalyst metal film (FIG. 1(d)), and growing a carbon nanotube probe tip on the catalyst film (16 in FIG. 1(e)). The carbon probe tips can be straight, angled, or sharply bent and have various technical applications.

Abstract: Nanotube assemblies and methods for manufacturing the same, including one or more protective layers. A nanotube assembly may include a substrate, a nanotube array, formed on the substrate, and a protective layer, formed on a first area of the substrate where the nanotube array is not, the protective layer reducing the formation of nanocones, and promoting the formation of nanotubes, which make up the nanotube array.

Abstract: Provided are aligned carbon nanotubes for a fuel cell having a large surface area, a nanocomposite that includes the aligned carbon nanotubes loaded with highly dispersed nanoparticles of a metallic catalyst, methods of producing the carbon nanotubes and the nanocomposite, and a fuel cell including the nanocomposite. In the nanocomposite, nanoparticles of the metallic catalyst are uniformly distributed on external walls of the nanotubes. A fuel cell including the nanocomposite exhibits better performance.

Abstract: This invention discloses novel field emitters which exhibit improved emission characteristics combined with improved emitter stability, in particular, new types of carbide or nitride based electron field emitters with desirable nanoscale, aligned and sharped-tip emitter structures.

Abstract: This invention discloses novel field emitters which exhibit improved emission characteristics combined with improved emitter stability, in particular, new types of carbide or nitride based electron field emitters with desirable nanoscale, aligned and sharped-tip emitter structures.

Abstract: A mechanically stable and oriented scanning probe tip comprising a carbon nanotube having a base with gradually decreasing diameter, with a sharp tip at the probe tip. Such a tip or an array of tips is produced by depositing a catalyst metal film on a substrate (10 & 12 in FIG. 1(a)), depositing a carbon dot (14 in FIG. 1(b)) on the catalyst metal film, etching away the catalyst metal film (FIG. 1(c)) not masked by the carbon dot, removing the carbon dot from the catalyst metal film to expose the catalyst metal film (FIG. 1(d)), and growing a carbon nanotube probe tip on the catalyst film (16 in FIG. 1(e)). The carbon probe tips can be straight, angled, or sharply bent and have various technical applications.

Abstract: Nanotube assemblies and methods for manufacturing the same, including one or more protective layers. A nanotube assembly may include a substrate, a nanotube array, formed on the substrate, and a protective layer, formed on a first area of the substrate where the nanotube array is not, the protective layer reducing the formation of nanocones, and promoting the formation of nanotubes, which make up the nanotube array.

Abstract: Elongated nanostructures and a method of fabricating elongated nanostructures with one or more sharp A bends using a plasma enhanced chemical vapor deposition process comprising placing an anode above the nanostructure and a cathode below the nanostructure, applying a voltage between the anode and cathode to create electric field lines, and changing the direction of the electric field lines during the fabrication of the nanostructure. Device applications using such structures are also disclosed.