Patents by Inventor Li-Jui Chen

Li-Jui Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light source, EUV lithography system, and method for generating EUV radiation
    Patent number: 10824083
    Abstract: A light source for extreme ultraviolet (EUV) radiation is provided. The light source includes a target droplet generator, a laser generator, a measuring device, and a controller. The target droplet generator is configured to provide a plurality of target droplets to a source vessel. The laser generator is configured to provide a plurality of first laser pulses according to a control signal to irradiate the target droplets in the source vessel, so as to generate plasma as the EUV radiation. The measuring device is configured to measure process parameters including temperature of the source vessel, droplet positions of the target droplets, and beam sizes and focal points of the first laser pulses. The controller is configured to provide the control signal according to at least two of the process parameters.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: November 3, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi Yang, Ssu-Yu Chen, Shang-Chieh Chien, Chieh Hsieh, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • METHOD AND APPARATUS FOR REMOVING DEBRIS FROM COLLECTOR
    Publication number: 20200331038
    Abstract: Debris is removed from a collector of an extreme ultraviolet light source vessel by applying a suction force through a vacuum opening of a cable. The method for removing debris also includes weakening debris attachment by using a sticky surface or by spreading a solution through a nozzle, wherein the sticky surface and the nozzle are arranged on the cable proximal to the vacuum opening. A borescope system and interchangeable rigid portions of the cable assists in targeting a target area of the collector where the debris is.
    Type: Application
    Filed: April 18, 2019
    Publication date: October 22, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shang-Ying WU, Ming-Hsun TSAI, Sheng-Kang YU, Yung-Teng YU, Chi YANG, Shang-Chieh CHIEN, Chia-Chen CHEN, Li-Jui CHEN, Po-Chung CHENG
  • Apparatus and method for generating extreme ultraviolet radiation
    Patent number: 10802406
    Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.
    Type: Grant
    Filed: August 7, 2019
    Date of Patent: October 13, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chieh Hsieh, Kuan-Hung Chen, Chun-Chia Hsu, Shang-Chieh Chien, Liu Bo-Tsun, Li-Jui Chen, Po-Chung Cheng
  • Method for discharging static charges on reticle
    Patent number: 10802394
    Abstract: A reticle, a reticle container and a method for discharging static charges accumulated on a reticle are provided. The reticle includes a mask substrate, a reflective multilayer (ML) structure, a capping layer, an absorption structure and a conductive material structure. The mask substrate has a front-side surface and a back-side surface. The reflective ML structure is positioned over the front-side surface of mask substrate. The capping layer is positioned over the reflective ML structure. The absorption structure is positioned over the capping layer. The conductive material structure is positioned over a sidewall surface of the mask substrate and a sidewall surface of the absorption structure.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: October 13, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsiao-Lun Chang, Chueh-Chi Kuo, Tsung-Yen Lee, Tzung-Chi Fu, Li-Jui Chen, Po-Chung Cheng, Che-Chang Hsu
  • Radiation source for lithography exposure process
    Patent number: 10802405
    Abstract: A method for generating EUV radiation is provided. The method includes generating a target droplet with a target droplet generator. The method further includes recording an image of the target droplet on a first image plane to detect a first position of the target droplet. The method also includes recording an image of the target droplet on a second image plane to detect a second position of the target droplet. In addition, the method includes projecting a laser pulse onto the target droplet when the target droplet is located on a focus plane. The method further includes adjusting at least one parameter of the target droplet generator according to the first position and the second position.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: October 13, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chieh Hsieh, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • Light source for lithography exposure process
    Patent number: 10795264
    Abstract: A method for generating a radiation light in a lithography exposure system is provided. The method includes connecting a first nozzle assembly coupled to a support to an outlet of a storage member that receives a target fuel inside. The method further includes guiding the target fuel flowing through the first nozzle assembly and supplying a droplet of the target fuel into an excitation zone via the first nozzle assembly. The method also includes moving the support to connect a second nozzle assembly coupled to the support with the outlet. In addition, the method includes guiding the target fuel flowing through the second nozzle assembly and supplying a droplet of the target fuel into the excitation zone via the second nozzle assembly. The method further includes irradiating the droplet of the target fuel in the excitation zone with a laser pulse.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: October 6, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Hsin-Feng Chen, Han-Lung Chang, Li-Jui Chen, Bo-Tsun Liu
  • Radiation Source Apparatus
    Publication number: 20200314990
    Abstract: A radiation source apparatus includes a vessel, a laser, a collector, a container, and a cone structure. The vessel has an exit aperture. The laser is at one end of the vessel and configured to excite a target material to form a plasma. The collector is in the vessel and configured to collect at least radiation of a desired wavelength emitted by the plasma and to direct the collected radiation to the exit aperture of the vessel. The container is configured to receive a residue of the plasma. The cone structure is between the collector and the exit aperture and located besides the container. The cone structure includes a first inner sidewall, and a second inner sidewall adjoining the first inner sidewall and closer to the container than the first inner sidewall, and a first baffle assembly on the first inner sidewall.
    Type: Application
    Filed: March 27, 2019
    Publication date: October 1, 2020
    Inventors: Ssu-Yu CHEN, Chi YANG, Che-Chang HSU, Shang-Chieh CHIEN, Li-Jui CHEN, Po-Chung CHENG
  • EXTREME ULTRAVIOLET RADIATION SOURCE AND CLEANING METHOD THEREOF
    Publication number: 20200314989
    Abstract: An extreme ultraviolet radiation source is provided, including a vessel and a gas scrubber. The vessel has a gas inlet from which a cleaning gas is supplied into the vessel and a gas outlet from which the cleaning gas exits the vessel. The gas scrubber is disposed within the vessel, arranged such that the cleaning gas leaves the vessel through the gas outlet after flowing through the gas scrubber. The gas scrubber has a number of gas passages to allow the cleaning gas to flow through, and the sizes of the gas passages vary according to the distance between each of the gas passages and the gas outlet.
    Type: Application
    Filed: June 12, 2020
    Publication date: October 1, 2020
    Inventors: Chi YANG, Sheng-Ta LIN, Shang-Chieh CHIEN, Li-Jui CHEN, Po-Chung CHENG
  • Radiation source apparatus
    Patent number: 10791616
    Abstract: A radiation source apparatus includes a vessel, a laser, a collector, a container, and a cone structure. The vessel has an exit aperture. The laser is at one end of the vessel and configured to excite a target material to form a plasma. The collector is in the vessel and configured to collect at least radiation of a desired wavelength emitted by the plasma and to direct the collected radiation to the exit aperture of the vessel. The container is configured to receive a residue of the plasma. The cone structure is between the collector and the exit aperture and located besides the container. The cone structure includes a first inner sidewall, and a second inner sidewall adjoining the first inner sidewall and closer to the container than the first inner sidewall, and a first baffle assembly on the first inner sidewall.
    Type: Grant
    Filed: March 27, 2019
    Date of Patent: September 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ssu-Yu Chen, Chi Yang, Che-Chang Hsu, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • LITHOGRAPHY SYSTEM AND METHOD THEREOF
    Publication number: 20200292946
    Abstract: A method includes providing a plurality of fuel droplets into an EUV source vessel by a fuel droplet generator, in which the fuel droplet generator has a first portion inside the EUV source vessel and a second portion outside the EUV source vessel; generating a plurality of output signals respectively from a plurality of oscillation sensors on the fuel droplet generator; determining whether the output signals are acceptable; and determining whether an unwanted oscillation originates from the first portion of the fuel droplet generator or the second portion of the fuel droplet generator when the output signals is determined as unacceptable.
    Type: Application
    Filed: May 29, 2020
    Publication date: September 17, 2020
    Inventors: Wei-Shin CHENG, Hsin-Feng CHEN, Cheng-Hao LAI, Shao-Hua WANG, Han-Lung CHANG, Li-Jui CHEN, Po-Chung CHENG
  • Extreme ultraviolet photolithography system and method
    Patent number: 10779387
    Abstract: A method of operating an extreme ultraviolet (EUV) lithography system includes directing a metallic droplet along a shroud, wherein the shroud has a first opening adjacent a droplet generator and a second opening adjacent an excitation region; partially shielding the second opening of the shroud; and emitting a laser beam encountering the metallic droplet to generate an EUV light.
    Type: Grant
    Filed: January 16, 2019
    Date of Patent: September 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Hsun Tsai, Han-Lung Chang, Yen-Hsun Chen, Shao-Hua Wang, Li-Jui Chen, Po-Chung Cheng
  • RADIATION SOURCE FOR LITHOGRAPHY PROCESS
    Publication number: 20200278617
    Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.
    Type: Application
    Filed: May 18, 2020
    Publication date: September 3, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shang-Ying WU, Shang-Chieh CHIEN, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
  • METHOD OF CONTROLLING RETICLE MASKING BLADE POSITIONING TO MINIMIZE IMPACT ON CRITICAL DIMENSION UNIFORMITY AND DEVICE FOR CONTROLLING RETICLE MASKING BLADE POSITION
    Publication number: 20200264515
    Abstract: A method of controlling reticle masking blade positioning to minimize the impact on critical dimension uniformity includes determining a target location of a reticle masking blade relative to a reflective reticle and positioning the reticle masking blade at the target location. A position of the reticle masking blade is monitored during an imaging operation. The position of the reticle masking blade is compared with the target location and the position of the reticle masking blade is adjusted if the position of the reticle masking blade is outside a tolerance of the target location.
    Type: Application
    Filed: May 4, 2020
    Publication date: August 20, 2020
    Inventors: Hung-Wen CHO, Fu-Jye LIANG, Chun-Kuang CHEN, Chih-Tsung SHIH, Li-Jui CHEN, Po-Chung CHENG, Chin-Hsiang LIN
  • Apparatus and method for monitoring reflectivity of the collector for extreme ultraviolet radiation source
    Patent number: 10747119
    Abstract: A method of controlling a feedback system with a data matching module of an extreme ultraviolet (EUV) radiation source is disclosed. The method includes obtaining a slit integrated energy (SLIE) sensor data and diffractive optical elements (DOE) data. The method performs a data match, by the data matching module, of a time difference of the SLIE sensor data and the DOE data to identify a mismatched set of the SLIE sensor data and the DOE data. The method also determines whether the time difference of the SLIE sensor data and the DOE data of the mismatched set is within an acceptable range. Based on the determination, the method automatically validates a configurable data of the mismatched set such that the SLIE sensor data of the mismatched set is valid for a reflectivity calculation.
    Type: Grant
    Filed: September 11, 2019
    Date of Patent: August 18, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Chih Huang, Chi Yang, Che-Chang Hsu, Li-Jui Chen, Po-Chung Cheng
  • LASER SOURCE DEVICE, EXTREME ULTRAVIOLET LITHOGRAPHY DEVICE AND METHOD
    Publication number: 20200245443
    Abstract: A device includes a laser source, an amplifier, an optical sensor and a spectrometer. The laser source is configured to produce a seed laser beam. The amplifier includes gain medium and a discharging unit. The discharging unit is configured to pump the gain medium for amplifying power of the seed laser beam. The optical sensor is coupled to the amplifier and configured for sensing an optical emission generated in the amplifier while the gain medium is discharging. The spectrometer is coupled with the optical sensor and configured to measure a spectrum of the optical emission.
    Type: Application
    Filed: April 10, 2020
    Publication date: July 30, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Henry Yee-Shian TONG, Wen-Chih WANG, Hsin-Liang CHEN, Louis Chun-Lin CHANG, Cheng-Chieh CHEN, Li-Jui CHEN, Po-Chung CHENG, Jeng-Yann TSAY
  • Communication control method
    Patent number: 10725384
    Abstract: A method includes operation below. A first task is performed by a control circuit according to a first request from a processor. A second request, for triggering a second task to be performed by the control circuit, is received by an interface circuit. A first data rate, for transmitting first data generated in the first task, is calculated by the interface circuit. A second data rate, for transmitting second data to be generated in the second task, is estimated by the interface circuit. The second task other than the first task is performed by the control circuit. The first data and the second data are transmitted from the control circuit to the processor in a condition that a sum of the first data rate and the second data rate complies with a bandwidth of a data switch coupled between the control circuit and the processor.
    Type: Grant
    Filed: August 14, 2018
    Date of Patent: July 28, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chao-Chen Chang, Shao-Wei Luo, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • Droplet generator and method of servicing extreme ultraviolet radiation source apparatus
    Patent number: 10719020
    Abstract: An extreme ultraviolet radiation source apparatus includes a chamber including at least a droplet generator, a nozzle of the droplet generator, and a dry ice blasting assembly. The droplet generator includes a reservoir for a molten metal, and the nozzle has a first end connected to the reservoir and a second opposing end where molten metal droplets emerge from the nozzle. The dry ice blasting assembly includes a blasting nozzle, a blasting air inlet and a blaster carbon dioxide (CO2) inlet. The blasting nozzle is disposed inside the chamber. The blasting nozzle is arranged to direct a pressurized air stream and dry ice particles at the nozzle of the droplet generator.
    Type: Grant
    Filed: May 6, 2019
    Date of Patent: July 21, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Hsun Chen, Ming-Hsun Tsai, Shao-Hua Wang, Han-Lung Chang, Li-Jui Chen, Chia-Chen Chen
  • Layout modification method for exposure manufacturing process
    Patent number: 10720419
    Abstract: A layout modification method for fabricating a semiconductor device is provided. Uniformity of critical dimensions of a first portion and a second portion in a patterned layer is calculated by using a layout for an exposure manufacturing process to produce the semiconductor device. The second portion is adjacent to the first portion, and a width of the second portion equals a penumbra size of the exposure manufacturing process. The penumbra size is utilized to indicate which area of the patterned layer is affected by light leakage exposure from another exposure manufacturing process. Non-uniformity between the first and second portions of the patterned layer is compensated according to the uniformity of critical dimensions to generate a modified layout.
    Type: Grant
    Filed: July 26, 2019
    Date of Patent: July 21, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung-Wen Cho, Fu-Jye Liang, Chun-Kuang Chen, Chih-Tsung Shih, Li-Jui Chen, Po-Chung Cheng, Chin-Hsiang Lin
  • EUV vessel inspection method and related system
    Patent number: 10718718
    Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.
    Type: Grant
    Filed: September 29, 2019
    Date of Patent: July 21, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Lin Louis Chang, Shang-Chieh Chien, Shang-Ying Wu, Li-Kai Cheng, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng, Anthony Yen, Chia-Chen Chen
  • Method and apparatus for collecting information used in image-error compensation
    Patent number: 10712651
    Abstract: A reticle used for collecting information for image-error compensation is provided. The reticle includes a first black border structure and a second black border structure formed over a substrate. The first and second black borders are concentric with a center of the substrate. The reticle further includes a first image structure and a second image structure formed over the substrate. The first and second image structures each has patterns representing features to be patterned on a semiconductor wafer. In a direction away from the center of the substrate, the second image structure, the second black border structure, the first image structure and the first black border structure are arranged in order.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: July 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung-Wen Cho, Fu-Jye Liang, Chun-Kuang Chen, Chih-Tsung Shih, Li-Jui Chen, Po-Chung Cheng, Chin-Hsiang Lin