Patents by Inventor Li-Jui Chen

Li-Jui Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Radiation source apparatus and method for decreasing debris in radiation source apparatus
    Patent number: 10955762
    Abstract: A radiation source apparatus is provided. The radiation source apparatus includes a chamber, an exhaust module, a measuring device, a gas supply module and a controller. The exhaust module is configured to extract debris caused by unstable target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The gas supply module is configured to provide a gas into the chamber according to a second gas flow rate. The controller is configured to adjust the first gas flow rate and the second gas flow according to the measured concentration of the debris.
    Type: Grant
    Filed: July 13, 2020
    Date of Patent: March 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi Yang, Ssu-Yu Chen, Shang-Chieh Chien, Chieh Hsieh, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Lithography system and method thereof
    Patent number: 10955750
    Abstract: A method includes generating a plasma that emits a first EUV radiation in a vessel at a first gas exhaust rate of the vessel; directing the first EUV radiation to a first substrate using a collector in the vessel; halting the generating of the first EUV radiation; and ejecting a gas past the collector at a second gas exhaust rate of the vessel, in which the second gas exhaust rate is greater than the first gas exhaust rate after the halting.
    Type: Grant
    Filed: July 16, 2019
    Date of Patent: March 23, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Chun Yen, Chi Yang, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • EUV radiation source apparatus for lithography
    Patent number: 10955752
    Abstract: An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: March 23, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Chih Chen, Po-Chung Cheng, Li-Jui Chen, Shang-Chieh Chien, Sheng-Kang Yu, Wei-Chun Yen
  • Lithography system and cleaning method thereof
    Patent number: 10942459
    Abstract: A lithography system and a cleaning method thereof are provided. The lithography system includes a light source generator. The light source generator includes a collector, a droplet generator and a droplet catcher. The droplet generator and the droplet catcher are facing each other, and disposed at a region surrounding the collector. The cleaning method includes: shifting the droplet generator out of the light source generator via a port of the light source generator; inserting a shove assembly into the light source generator via the port; using a borescope attached to the shovel assembly to identify a location of a deposit formed by droplets generated by the droplet generator; using the shovel assembly to remove and collect the deposit; and withdrawing the shovel assembly along with the borescope from the light source generator via the port.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: March 9, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sheng-Ta Lin, Li-Jui Chen, Shang-Chieh Chien
  • System and Method for Extreme Ultraviolet Source Control
    Publication number: 20210068241
    Abstract: A method for extreme ultraviolet (EUV) lithography includes loading an EUV mask to a lithography system; loading a wafer to the lithography system, wherein the wafer includes a resist layer sensitive to EUV radiation; producing EUV radiation by heating target plumes using a radiation source; and exposing the resist layer to the EUV radiation while monitoring a speed of the target plumes.
    Type: Application
    Filed: November 13, 2020
    Publication date: March 4, 2021
    Inventors: Chun-Chia Hsu, Chieh Hsieh, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng, Tzung-Chi Fu, Bo-Tsun Liu
  • LIGHT SOURCE, EUV LITHOGRAPHY SYSTEM, AND METHOD FOR GENERATING EUV RADIATION
    Publication number: 20210055664
    Abstract: A light source for EUV is provided. The light source includes a target droplet generator, a laser generator, and a controller. The target droplet generator is configured to provide target droplets to a source vessel. The laser generator is configured to provide first laser pulses according to a control signal to irradiate the target droplets in the source vessel. The controller is configured to provide the control signal according to at least two of process parameters including temperature of the source vessel, droplet positions of the target droplets, and beam sizes and focal points of the first laser pulses. When the average value or the standard deviation of the temperature of the source vessel and the droplet positions of the target droplets exceed the predetermined range, the controller is configured to provide the control signal to the laser generator to stop providing the first laser pulses.
    Type: Application
    Filed: October 22, 2020
    Publication date: February 25, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chi YANG, Ssu-Yu CHEN, Shang-Chieh CHIEN, Chieh HSIEH, Tzung-Chi FU, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
  • REFILL AND REPLACEMENT METHOD FOR DROPLET GENERATOR
    Publication number: 20210059036
    Abstract: A method includes ejecting a metal droplet from a reservoir of a droplet generator toward a zone of excitation in front of a collector, emitting an excitation laser toward the zone of excitation, such that the metal droplet is heated by the excitation laser to generate extreme ultraviolet (EUV) radiation, halting the emission of the excitation laser, depressurizing the reservoir of the droplet generator, cooling down the droplet generator to a temperature not lower than about 150° C., and refilling the reservoir of the droplet generator with a solid metal material at the temperature not lower than about 150° C.
    Type: Application
    Filed: August 22, 2019
    Publication date: February 25, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Yu TU, Han-Lung CHANG, Hsiao-Lun CHANG, Li-Jui CHEN, Po-Chung CHENG
  • Radiation source for lithography process
    Patent number: 10928741
    Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.
    Type: Grant
    Filed: May 18, 2020
    Date of Patent: February 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shang-Ying Wu, Shang-Chieh Chien, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • EUV radiation source for lithography exposure process
    Patent number: 10925142
    Abstract: An extreme ultraviolet (EUV) lithography system is provided. The EUV lithography system includes the above-mentioned extreme ultraviolet (EUV) radiation source. The EUV lithography system further includes a collector configured to collect and reflect the EUV radiation and a mask stage configured to secure an EUV mask. The EUV lithography system also includes a wafer stage configured to secure a semiconductor wafer. In addition, the EUV lithography system includes one or more optical modules configured to direct the EUV radiation from the radiation source to image an integrated circuit (IC) pattern defined on the EUV mask onto the semiconductor wafer.
    Type: Grant
    Filed: October 2, 2018
    Date of Patent: February 16, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Chia Hsu, Kuan-Hung Chen, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • APPARATUS AND METHOD FOR GENERATING EXTREME ULTRAVIOLET RADIATION
    Publication number: 20210041787
    Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.
    Type: Application
    Filed: October 12, 2020
    Publication date: February 11, 2021
    Inventors: Chieh HSIEH, Kuan-Hung CHEN, Chun-Chia HSU, Shang-Chieh CHIEN, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
  • EUV radiation modification methods and systems
    Patent number: 10917959
    Abstract: A method and system for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.
    Type: Grant
    Filed: September 29, 2019
    Date of Patent: February 9, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Lin Louis Chang, Jen-Hao Yeh, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • LITHOGRAPHY SYSTEM AND CLEANING METHOD THEREOF
    Publication number: 20210033990
    Abstract: A lithography system and a cleaning method thereof are provided. The lithography system includes a light source generator. The light source generator includes a collector, a droplet generator and a droplet catcher. The droplet generator and the droplet catcher are facing each other, and disposed at a region surrounding the collector. The cleaning method includes: shifting the droplet generator out of the light source generator via a port of the light source generator; inserting a shove assembly into the light source generator via the port; using a borescope attached to the shovel assembly to identify a location of a deposit formed by droplets generated by the droplet generator; using the shovel assembly to remove and collect the deposit; and withdrawing the shovel assembly along with the borescope from the light source generator via the port.
    Type: Application
    Filed: March 2, 2020
    Publication date: February 4, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Sheng-Ta Lin, Li-Jui Chen, Shang-Chieh Chien
  • PHOTOGRAPHY DEVICE HAVING ILLUMINATOR AND METHOD FOR ADJUSTING INTENSITY UNIFORMITY
    Publication number: 20210033982
    Abstract: An illuminator includes a first facet mirror receiving and reflecting an exposure radiation, an adjustable shielding element disposed on the first facet mirror, the adjustable shielding element adjusting intensity uniformity of the exposure radiation reflected by the first facet mirror, and a second facet mirror receiving and reflecting the exposure radiation reflected by the first facet mirror.
    Type: Application
    Filed: June 3, 2020
    Publication date: February 4, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Che-Chang Hsu, Chieh-Jen Cheng, Li-Jui Chen, Shang-Chieh Chien, Chao-Chen Chang, Ssu-Yu Chen
  • Droplet Catcher System of EUV Lithography Apparatus and EUV Lithography Apparatus Maintenance Method
    Publication number: 20210033986
    Abstract: A droplet catcher system of an EUV lithography apparatus is provided. The droplet catcher system includes a catcher body, a heat transfer part, a heat exchanger, and a controller. The catcher body has an outer surface. The heat transfer part is directly attached to the outer surface of the catcher body. The heat exchanger is thermally coupled to the heat transfer part. The controller is electrically coupled to the heat exchanger.
    Type: Application
    Filed: March 2, 2020
    Publication date: February 4, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Yu Tu, Po-Chung Cheng, Hsiao-Lun Chang, Li-Jui Chen, Han-Lung Chang
  • EXTREME ULTRAVIOLET LITHOGRAPHY SYSTEM
    Publication number: 20210033983
    Abstract: An extreme ultraviolet (EUV) lithography system includes a vane bucket module. The vane bucket module includes a collecting tank and a temperature adjusting pack. The collecting tank has a cover and the cover includes a plurality of through holes. Thicknesses of edges of the cover is greater than a thickness of a center of the cover. The temperature adjusting pack surrounds the collecting tank. The temperature adjusting pack includes a plurality of inlets aligned with the through holes.
    Type: Application
    Filed: March 2, 2020
    Publication date: February 4, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ssu-Yu Chen, Po-Chung Cheng, Li-Jui Chen, Che-Chang Hsu, Chi Yang
  • DROPLET GENERATOR, EUV LITHOGRAPHY DEVICE AND METHOD OF GENERATING A SERIES OF DROPLETS USING A DROPLET GENERATOR
    Publication number: 20210037634
    Abstract: A droplet generator includes a steering system, a reservoir, a nozzle, a first heater, a second heater and a third heater. The steering system is used for controlling a position of droplet release of the droplet generator. The reservoir is held on the steering system for storing tin. The nozzle is connected with the reservoir for generating tin droplets, wherein the nozzle comprises at least a first zone, a second zone and a third zone connected in sequence. The first heater surrounds a peripheral surface of the nozzle in the first zone. The second heater surrounds a peripheral surface of the nozzle in the second zone. The third heater surrounds a peripheral surface of the nozzle in the third zone, wherein the heating of the first heater, the second heater and the third heater are separately controlled.
    Type: Application
    Filed: March 2, 2020
    Publication date: February 4, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jen-Hung Hsiao, Po-Chung Cheng, Li-Jui Chen, Shang-Chieh Chien
  • RETICLE WITH CONDUCTIVE MATERIAL STRUCTURE
    Publication number: 20210026236
    Abstract: A reticle, a reticle container and a method for discharging static charges accumulated on a reticle are provided. The reticle includes a mask substrate, a reflective multilayer (ML) structure, a capping layer, an absorption structure and a conductive material structure. The mask substrate has a front-side surface and a back-side surface. The reflective ML structure is positioned over the front-side surface of mask substrate. The capping layer is positioned over the reflective ML structure. The absorption structure is positioned over the capping layer. The conductive material structure is positioned over a sidewall surface of the mask substrate and a sidewall surface of the absorption structure.
    Type: Application
    Filed: October 8, 2020
    Publication date: January 28, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsiao-Lun CHANG, Chueh-Chi KUO, Tsung-Yen LEE, Tzung-Chi FU, Li-Jui CHEN, Po-Chung CHENG, Che-Chang HSU
  • LITHOGRAPHY SYSTEM AND METHOD THEREOF
    Publication number: 20210018845
    Abstract: A method includes generating a plasma that emits a first EUV radiation in a vessel at a first gas exhaust rate of the vessel; directing the first EUV radiation to a first substrate using a collector in the vessel; halting the generating of the first EUV radiation; and ejecting a gas past the collector at a second gas exhaust rate of the vessel, in which the second gas exhaust rate is greater than the first gas exhaust rate after the halting.
    Type: Application
    Filed: July 16, 2019
    Publication date: January 21, 2021
    Inventors: Wei-Chun YEN, Chi YANG, Shang-Chieh CHIEN, Li-Jui CHEN, Po-Chung CHENG
  • EXTREME ULTRAVIOLET PHOTOLITHOGRAPHY METHOD
    Publication number: 20200413526
    Abstract: An extreme ultraviolet (EUV) lithography method includes causing a first metallic droplet to move along a shroud and through an aperture of the shroud at a first velocity, and adjusting an open area of the aperture of the shroud. After adjusting the open area of the aperture of the shroud, a second metallic droplet is caused to move along the shroud and through the aperture of the shroud at a second velocity, in which the second velocity is different from the first velocity.
    Type: Application
    Filed: September 14, 2020
    Publication date: December 31, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Hsun TSAI, Han-Lung CHANG, Yen-Hsun CHEN, Shao-Hua WANG, Li-Jui CHEN, Po-Chung CHENG
  • EUV light source and apparatus for EUV lithography
    Patent number: 10880980
    Abstract: A metal reuse system for an extreme ultra violet (EUV) radiation source apparatus includes a first metal collector for collecting metal from vanes of the EUV radiation source apparatus, a first metal storage coupled to the first metal collector via a first conduit, a metal droplet generator coupled to the first metal storage via a second conduit, and a first metal filtration device disposed on either one of the first conduit and the second conduit.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Shin Cheng, Han-Lung Chang, Li-Jui Chen, Po-Chung Cheng, Hsiao-Lun Chang