Patents by Inventor Li-Jui Chen

Li-Jui Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vessel for extreme ultraviolet radiation source
    Patent number: 10877378
    Abstract: A source for generating extreme ultraviolet (EUV) radiation includes a chamber enclosing a low pressure environment. A gas inlet is configured to provide a cleaning gas in the chamber. A plurality of exhaust ports, each having a corresponding gate valve including a scanner gate valve corresponding to an exhaust port separating the chamber from an EUV scanner are provided to the chamber. A pressure sensor is disposed inside the chamber and adjacent to the scanner gate valve. A controller is configured to control the gate valves other than the scanner gate valve based on an output of the pressure sensor.
    Type: Grant
    Filed: September 25, 2019
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ssu-Yu Chen, Che-Chang Hsu, Chi Yang, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • Pressurized tin collection bucket with in-line draining mechanism
    Patent number: 10877366
    Abstract: A droplet collection bucket includes a droplet collection tube, a level sensor positioned on the droplet collection tube, a gate valve configured to close a rear portion of the droplet collection tube, a gas supply configured to supply a gas into the rear portion of the droplet collection tube, a heating element wrapping around the droplet collection tube, and a drain tube connecting an interior of the droplet collection tube with an outside of the droplet collection tube.
    Type: Grant
    Filed: January 6, 2020
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi Yang, Hsin-Feng Chen, Li-Jui Chen
  • Collector pellicle
    Patent number: 10880981
    Abstract: An extreme ultraviolet (EUV) source includes a collector mirror, a drain, a droplet generator configured to eject a target material toward the drain, a pellicle disposed over the collector mirror. The pellicle is configured to catch debris formed of the target material.
    Type: Grant
    Filed: September 17, 2018
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shang-Chieh Chien, Chi Yang, Jen-Yang Chung, Shao-Wei Luo, Tzung-Chi Fu, Chun-Kuang Chen, Li-Jui Chen, Po-Chung Cheng
  • Method and apparatus for removing debris from collector
    Patent number: 10875060
    Abstract: Debris is removed from a collector of an extreme ultraviolet light source vessel by applying a suction force through a vacuum opening of a cable. The method for removing debris also includes weakening debris attachment by using a sticky surface or by spreading a solution through a nozzle, wherein the sticky surface and the nozzle are arranged on the cable proximal to the vacuum opening. A borescope system and interchangeable rigid portions of the cable assists in targeting a target area of the collector where the debris is.
    Type: Grant
    Filed: April 18, 2019
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shang-Ying Wu, Ming-Hsun Tsai, Sheng-Kang Yu, Yung-Teng Yu, Chi Yang, Shang-Chieh Chien, Chia-Chen Chen, Li-Jui Chen, Po-Chung Cheng
  • Extreme ultraviolet radiation source
    Patent number: 10877190
    Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a chamber and the chamber encloses an EUV collector mirror. The EUV collector mirror is configured to collect and direct EUV radiation generated in the chamber and at least three exhaust ports are configured to remove debris from the chamber. In some embodiments, the exhaust ports are symmetrically arranged in a plane perpendicular to an optical axis of the collector mirror. In some embodiments, three exhaust ports are disposed such that an angle between any two adjacent ports is 120 degrees. In some embodiments, four exhaust ports are disposed such that an angle between any two adjacent ports is 90 degrees. In some embodiments, the chamber is configured to maintain a pressure in a range from 0.1 mbar to 10 mbar.
    Type: Grant
    Filed: August 12, 2019
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi Yang, Sheng-Ta Lin, Jen-Yang Chung, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • Method of controlling reticle masking blade positioning to minimize impact on critical dimension uniformity and device for controlling reticle masking blade positioning
    Patent number: 10871713
    Abstract: A method of controlling reticle masking blade positioning to minimize the impact on critical dimension uniformity includes determining a target location of a reticle masking blade relative to a reflective reticle and positioning the reticle masking blade at the target location. A position of the reticle masking blade is monitored during an imaging operation. The position of the reticle masking blade is compared with the target location and the position of the reticle masking blade is adjusted if the position of the reticle masking blade is outside a tolerance of the target location.
    Type: Grant
    Filed: May 4, 2020
    Date of Patent: December 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung-Wen Cho, Fu-Jye Liang, Chun-Kuang Chen, Chih-Tsung Shih, Li-Jui Chen, Po-Chung Cheng, Chin-Hsiang Lin
  • Apparatus and method for prevention of contamination on collector of extreme ultraviolet light source
    Patent number: 10871647
    Abstract: An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a trajectory correcting device attached to or embedded in the EUV collector mirror body and a trajectory correcting device to adjust the trajectory of metal from the reflective surface of the EUV collector mirror body to an opposite side of the EUV collector mirror body.
    Type: Grant
    Filed: July 19, 2019
    Date of Patent: December 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuo-An Liu, Gwan-Sin Chang, Bharath Kumar Pulicherla, Li-Jui Chen, Sheng-Kang Yu, Chung-Cheng Wu, Zhiqiang Wu
  • EUV metal droplet catchers
    Patent number: 10871719
    Abstract: A droplet catcher includes a tube main body and baffles arranged along a length direction of the tube main body.
    Type: Grant
    Filed: June 14, 2019
    Date of Patent: December 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Sheng-Ta Lin, Po-Chung Cheng, Li-Jui Chen, Shang-Chieh Chien
  • Semiconductor apparatus and method of operating the same
    Patent number: 10859918
    Abstract: A method for operating a semiconductor apparatus includes generating a plurality of target droplets, deforming the target droplets into a plurality of target plumes respectively, changing an orientation of at least one of the target plumes, and generating a plurality of EUV radiations from the target plumes respectively. At least one of the EUV radiations irradiates an area on the light collector different from other EUV radiations in response to the orientation of the at least one of the target plumes.
    Type: Grant
    Filed: January 30, 2019
    Date of Patent: December 8, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuan-Hung Chen, Chieh Hsieh, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • EUV light source and apparatus for lithography
    Patent number: 10859928
    Abstract: An extreme ultraviolet (EUV) radiation source apparatus includes a collector and a target droplet generator for generating a tin (Sn) droplet. A debris collection device is disposed over a reflection surface of the collector, and at least one drip hole is located between the debris collection device and the collector. A tin bucket for collecting debris from the debris collection device is located below the at least one drip hole, and a tube or guide rod extends from the drip hole to the tin bucket.
    Type: Grant
    Filed: May 17, 2019
    Date of Patent: December 8, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Chih Chen, Sheng-Kang Yu, Chi Yang, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • APPARATUS AND METHOD FOR MONITORING REFLECTIVITY OF THE COLLECTOR FOR EXTREME ULTRAVIOLET RADIATION SOURCE
    Publication number: 20200379357
    Abstract: A method of controlling a feedback system with a data matching module of an extreme ultraviolet (EUV) radiation source is disclosed. The method includes obtaining a slit integrated energy (SLIE) sensor data and diffractive optical elements (DOE) data. The method performs a data match, by the data matching module, of a time difference of the SLIE sensor data and the DOE data to identify a mismatched set of the SLIE sensor data and the DOE data. The method also determines whether the time difference of the SLIE sensor data and the DOE data of the mismatched set is within an acceptable range. Based on the determination, the method automatically validates a configurable data of the mismatched set such that the SLIE sensor data of the mismatched set is valid for a reflectivity calculation.
    Type: Application
    Filed: August 17, 2020
    Publication date: December 3, 2020
    Inventors: Yu-Chih HUANG, Chi YANG, Che-Chang HSU, Li-Jui CHEN, Po-Chung CHENG
  • Light source system and polarization angle adjusting method
    Patent number: 10852191
    Abstract: A light source system is provided. The light source system is capable of measuring a polarization angle and includes a light source configured to emit an original light beam, and the original light beam has an original polarization angle. The light source system further includes an amplifying module configured to amplify the original light beam and generate a forward beam for hitting a target, and the forward beam has a forward polarization angle that is equal to the original polarization angle. The light source system further includes a polarization measurement unit, and the polarization measurement unit includes a first polarization measurement module configured to receive a first return beam and measure a first polarization angle of the first return beam. The first return beam is reflected from the target.
    Type: Grant
    Filed: June 12, 2019
    Date of Patent: December 1, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jen-Hao Yeh, Chun-Lin Chang, Han-Lung Chang, Li-Jui Chen, Po-Chung Cheng
  • Methods and apparatus for removing contamination from lithographic tool
    Patent number: 10852649
    Abstract: Embodiments described herein provide a method for cleaning contamination from sensors in a lithography tool without requiring recalibrating the lithography tool. More particularly, embodiments described herein teach cleaning the sensors using hydrogen radicals for a short period while the performance drifting is still above the drift tolerance. After a cleaning process described herein, the lithography tool can resume production without recalibration.
    Type: Grant
    Filed: January 13, 2020
    Date of Patent: December 1, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Zi-Wen Chen, Po-Chung Cheng, Chih-Tsung Shih, Li-Jui Chen, Shih-Chang Shih
  • System and method for extreme ultraviolet source control
    Patent number: 10842009
    Abstract: A method for extreme ultraviolet (EUV) lithography includes generating a target droplet, producing a target plume by heating the target droplet with a first laser pulse, directing first and second laser beams onto the target plume, and receiving the first and the second laser beams reflected by the target plume.
    Type: Grant
    Filed: June 3, 2019
    Date of Patent: November 17, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Chia Hsu, Chieh Hsieh, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng, Tzung-Chi Fu, Bo-Tsun Liu
  • METHOD AND APPARATUS FOR LITHOGRAPHY IN SEMICONDUCTOR FABRICATION
    Publication number: 20200350194
    Abstract: A reticle holding tool is provided. The reticle holding tool includes a housing, a reticle chuck, and a gas delivery assembly. The housing includes an opening, a top housing member, and a lateral housing member extending from the top housing member and terminating at a lower edge which is located on a predetermined plane. The reticle chuck is positioned in the housing and has an effective surface configured to secure a reticle. The effective surface is located between the predetermined plane and the top housing member. The reticle chuck is movable between two boundary lines that are perpendicular to the effective surface. A width of the opening is greater than a distance between the two boundary lines. The gas delivery assembly is positioned within the housing and configured to supply gas into the housing.
    Type: Application
    Filed: July 13, 2020
    Publication date: November 5, 2020
    Inventors: Chueh-Chi KUO, Tsung-Yen LEE, Chia-Hsin CHOU, Tzung-Chi FU, Li-Jui CHEN, Po-Chung CHENG, Che-Chang HSU
  • RADIATION SOURCE APPARATUS AND METHOD FOR DECREASING DEBRIS IN RADIATION SOURCE APPARATUS
    Publication number: 20200348607
    Abstract: A radiation source apparatus is provided. The radiation source apparatus includes a chamber, an exhaust module, a measuring device, a gas supply module and a controller. The exhaust module is configured to extract debris caused by unstable target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The gas supply module is configured to provide a gas into the chamber according to a second gas flow rate. The controller is configured to adjust the first gas flow rate and the second gas flow according to the measured concentration of the debris.
    Type: Application
    Filed: July 13, 2020
    Publication date: November 5, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi YANG, Ssu-Yu CHEN, Shang-Chieh CHIEN, Chieh HSIEH, Tzung-Chi FU, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
  • LAYOUT MODIFICATION METHOD FOR EXPOSURE MANUFACTURING PROCESS
    Publication number: 20200350306
    Abstract: A layout modification method for fabricating a semiconductor device is provided. Uniformity of critical dimensions of a first portion and a second portion in a patterned layer are calculated by using a layout for an exposure manufacturing process to produce the semiconductor device. A width of the second portion equals a penumbra size of the exposure manufacturing process, and the penumbra size is utilized to indicate which area of the patterned layer is affected by light leakage exposure from another exposure manufacturing process. Non-uniformity between the first and second portions of the patterned layer is compensated according to the uniformity of critical dimensions to generate a modified layout. The patterned layer includes a plurality of absorbers, and a first width of the absorbers is the first portion is less than a second width of the absorbers in the second portion the second portion.
    Type: Application
    Filed: July 20, 2020
    Publication date: November 5, 2020
    Inventors: Hung-Wen CHO, Fu-Jye LIANG, Chun-Kuang CHEN, Chih-Tsung SHIH, Li-Jui CHEN, Po-Chung CHENG, Chin-Hsiang LIN
  • EUV VESSEL INSPECTION METHOD AND RELATED SYSTEM
    Publication number: 20200348241
    Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.
    Type: Application
    Filed: July 20, 2020
    Publication date: November 5, 2020
    Inventors: Chun-Lin Louis CHANG, Shang-Chieh CHIEN, Shang-Ying WU, Li-Kai CHENG, Tzung-Chi FU, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG, Anthony YEN, Chia-Chen CHEN
  • METHOD AND APPARATUS FOR COLLECTING INFORMATION USED IN IMAGE-ERROR COMPENSATION
    Publication number: 20200348586
    Abstract: A method for collecting information in image-error compensation is provided. The method includes providing a reticle having a first image structure and a second image structure; moving a light shading member to control a first exposure field; projecting a light over the first exposure field; recording an image of the first image structure after the light is projected; moving the light shading member to control a second exposure field; projecting the light over the second exposure field; and recording an image of the second image structure after the light is projected.
    Type: Application
    Filed: July 13, 2020
    Publication date: November 5, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hung-Wen CHO, Fu-Jye LIANG, Chun-Kuang CHEN, Chih-Tsung SHIH, Li-Jui CHEN, Po-Chung CHENG, Chin-Hsiang LIN
  • DROPLET GENERATOR AND METHOD OF SERVICING EXTREME ULTRAVIOLET RADIATION SOURCE APPARATUS
    Publication number: 20200348608
    Abstract: An extreme ultraviolet radiation source apparatus includes a chamber including at least a droplet generator, a nozzle of the droplet generator, and a dry ice blasting assembly. The droplet generator includes a reservoir for a molten metal, and the nozzle has a first end connected to the reservoir and a second opposing end where molten metal droplets emerge from the nozzle. The dry ice blasting assembly includes a blasting nozzle, a blasting air inlet and a blaster carbon dioxide (CO2) inlet. The blasting nozzle is disposed inside the chamber. The blasting nozzle is arranged to direct a pressurized air stream and dry ice particles at the nozzle of the droplet generator.
    Type: Application
    Filed: July 20, 2020
    Publication date: November 5, 2020
    Inventors: Yen-Hsun CHEN, Ming-Hsun TSAI, Shao-Hua WANG, Han-Lung CHANG, Li-Jui CHEN, Chia-Chen CHEN