Abstract: The invention provides a simple interface circuit between a large capacity, high speed DRAM and a single port SRAM cache to achieve fast-cycle memory performance. The interface circuit provides wider bandwidth internal communications than external data transfers. The interface circuit schedules parallel pipeline operations so that one set of data buses can be shared in cycles by several data flows to save chip area and alleviate data congestion. A flexible design is provided that can be used for a range of bandwidths of data transfer and generally any size bandwidth ranging from 32 to 4096 bits wide can use this same approach.

Abstract: An integrated circuit is provided having a plurality of data transmitters, including a plurality of default data transmitters for transmitting data from a plurality of data sources and at least one redundancy data transmitter. A plurality of connection elements are provided having a first, low impedance connecting state and having a second, high impedance, disconnecting state. The connection elements are operable to disconnect a failing data transmitter from a corresponding output signal line and to connect the redundancy data transmitter to that output signal line in place of the failing data transmitter. In one preferred form, the connection elements include a fuse and an antifuse. In another form, the connection elements include micro-electromechanical (MEM) switches. The connecting elements preferably present the low impedance connecting state at frequencies which include signal switching frequencies above about 500 MHz.

Abstract: Described is a method for making silicon on sapphire structures, and devices therefrom. The inventive method of forming integrated circuits on a sapphire substrate comprises the steps of providing a device layer on an oxide layer of a temporary substrate; bonding the device layer to a handling substrate; removing the temporary substrate to provide a structure containing the device layer between the oxide layer and the handling substrate; bonding a sapphire substrate to the oxide layer; removing the handling substrate from the structure; and annealing the final structure to provide a substrate comprising the oxide layer between the device layer and the sapphire substrate. The sapphire substrate may comprise bulk sapphire or may be a conventional substrate material with an uppermost sapphire layer.

Abstract: A method and structure of forming a vertical polymer transistor structure is disclosed having a first conductive layer, filler structures co-planar with the first conductive layer, a semiconductor body layer above the first conductive layer, a second conductive layer above the semiconductor body layer, and an etch stop strip positioned between a portion of the first conductive layer and the semiconductor body layer.

Abstract: A system and method for generating random noise for use in testing electronic devices comprises a first random pattern generator circuit for generating first sets of random bit pattern signals; one or more delay devices each receiving a trigger input signal and a random bit pattern signal set for generating in response a respective delay output signal, each delay output signal being delayed in time with respect to a respective trigger signal, a delay time being determined by the bit pattern set received; and, an oscillator circuit device associated with a respective one or more delay devices for receiving a respective delay output signal therefrom and generating a respective oscillating signal, each oscillator signal generated being used to generate artificial random noise for emulating a real noise environment in an electronic device.

Abstract: An improved non-volatile memory array comprises a plurality of memory cells, at least one of the memory cells comprising a three-terminal non-volatile storage element for storing a logical state of the at least one memory cell. The memory array further comprises a plurality of write lines operatively coupled to the memory cells for selectively writing the logical state of one or more memory cells in the memory array, and a plurality of bit lines and word lines operatively coupled to the memory cells for selectively reading and writing the logical state of one or more memory cells in the memory array. The memory array is advantageously configured so as to eliminate the need for a pass gate being operatively coupled to a corresponding non-volatile storage element in the at least one memory cell.

Abstract: A content addressable memory (“CAM”) system includes a plurality of segments arranged in an array, wherein each of the plurality of segments includes a plurality of CAM cells, each of the plurality of CAM cells includes a wordline, a matchline and a sinkline, the wordline being shared by all of the cells in the same row, the matchline and sinkline being shared by all of the cells in the same segment; and a corresponding method of searching within a CAM system includes providing an input word to the CAM system, comparing a portion of the input word in a segment of the CAM system, and propagating a mismatch to obviate the need for comparison in other segments of the CAM system.

Abstract: A structure and method of forming a fully planarized polymer thin-film transistor by using a first planar carrier to process a first portion of the device including gate, source, drain and body elements. Preferably, the thin-film transistor is made with all organic materials. The gate dielectric can be a high-k polymer to boost the device performance. Then, the partially-finished device structures are flipped upside-down and transferred to a second planar carrier. A layer of wax or photo-sensitive organic material is then applied, and can be used as the temporary glue. The device, including its body area, is then defined by an etching process. Contacts to the devices are formed by conductive material deposition and chemical-mechanical polish.

Abstract: A number of performance parameters for the electronic system are determined at a particular age of the electronic system. The performance parameters can be correlated to maximum operating frequency of electronic components of the electronic system for the particular age of the electronic system. Operating frequency of the electronic components is adjusted in accordance with the performance parameters. The performance parameters may be predetermined (such as through reliability and burn-in testing), determined during the life of the electronic system, or some combination of these. Performance parameters can comprise prior operating frequencies, hours of operation, ambient temperature, and supply voltage. Performance parameters can comprise performance statistics determined using age-monitoring circuits, where an aged circuit is compared with a circuit enabled only for comparison. Performance statistics may also be determined though error detection circuits.

Abstract: A semiconductor device includes a combination substrate having a bulk silicon region, and a silicon-on-insulator (SOI) region. The SOI region includes a crystallized silicon layer formed by annealing amorphous silicon and having isolation trenches formed therein so as to remove defective regions, and isolation oxides formed in the isolation trenches.

Abstract: A hierarchical power supply noise monitoring device and system for very large scale integrated circuits. The noise-monitoring device is fabricated on-chip to measure the noise on the chip. The noise-monitoring system includes a plurality of on-chip noise-monitoring devices distributed strategically across the chip. A noise-analysis algorithm analyzes the noise characteristics from the noise data collected from the noise-monitoring devices, and a hierarchical noise-monitoring system maps the noise of each core to the system on chip.

Abstract: A method and structure for a photodiode array comprising a plurality of photodiode cores, light sensing sidewalls along an exterior of the cores, logic circuitry above the cores, trenches separating the cores, and a transparent material in the trenches is disclosed. With the invention, the sidewalls are perpendicular to the surface of the photodiode that receives incident light. The light sensing sidewalls comprise a junction region that causes electron transfer when struck with light. The sidewalls comprise four vertical sidewalls around each island core. The logic circuitry blocks light from the core so light is primarily only sensed by the sidewalls.

Abstract: A semiconductor device is presented which includes a self-aligned, planarized thin-film transistor which can be used in various integrated circuit devices, such as static random access memory (SRAM) cells. The semiconductor device has a first field-effect transistor and a second field-effect transistor. The second field-effect transistor overlies the first field-effect transistor, and the first field-effect transistor and the second field-effect transistor share a common gate. The second field-effect transistor includes a source and a drain which are self-aligned to the shared gate in a layer of planarized semiconductor material above the first field-effect transistor. In one embodiment, the second field-effect transistor is a thin-film transistor, and the shared gate has a U-shape wrap-around configuration at a body of the thin-film transistor.

Abstract: A system on a chip (SOC voltage generator) system is provided for supplying at least one voltage level to a plurality of units on a chip having an SOC design. The system includes a plurality of local DC voltage generators distributed throughout the chip, each local DC voltage generator independently supplying voltage to at least one unit of the plurality of units, each local DC voltage generator including a regulator system outputting one pump control signal; and a pump system receiving the one pump control signal and outputting at least one voltage level in accordance with the one pump control signal. Furthermore a method for supplying voltage to a plurality of units on a chip having an SOC design is provided. The method includes the steps of distributing a plurality of local DC voltage generators throughout the chip; and supplying at least one voltage level to the plurality of units via the plurality of local DC voltage generators.

Abstract: A method and structure for an integrated circuit chip has a logic core which includes a plurality of insulating and conducting levels, an exterior conductor level and passive devices having a conductive polymer directly connected to the exterior conductor level. The passive devices contain RF devices which also includes resistor, capacitor, and/or inductor. The resistors can be serpentine resistors and the capacitors can be interdigitated capacitors.

Abstract: A system on a chip (SOC voltage generator) system is provided for supplying at least one voltage level to a plurality of units on a chip having an SOC design. The system includes a plurality of local DC voltage generators distributed throughout the chip, each local DC voltage generator independently supplying voltage to at least one unit of the plurality of units, each local DC voltage generator including a regulator system outputting one pump control signal; and a pump system receiving the one pump control signal and outputting at least one voltage level in accordance with the one pump control signal. Furthermore a method for supplying voltage to a plurality of units on a chip having an SOC design is provided. The method includes the steps of distributing a plurality of local DC voltage generators throughout the chip; and supplying at least one voltage level to the plurality of units via the plurality of local DC voltage generators.

Abstract: Apparatus and method for providing high dielectric constant decoupling capacitors for semiconductor structures. The high dielectric constant decoupling capacitor can be fabricated by depositing high dielectric constant material between adjacent conductors on the same level, between conductors in successive levels, or both, to thereby provide very large capacitance value without any area or reliability penalty.

Abstract: A compact SRAM cell that incorporates refractory metal-silicon-nitrogen resistive elements as its pull-up transistors is described which includes a semi-conducting substrate, a pair of NMOS transfer devices formed vertically on the sidewalls of an etched substrate by a metal conductor providing electrical communication between an n+ region in the substrate and a bitline on top, a pair of pull-down nMOS devices on the substrate connected to ground interconnects, and a pair of vertical high-resistive elements formed of a refractory metal-silicon-nitrogen and function as a load for connecting to Vdd. The invention further describes a method for fabricating such compact SRAM cell.

Abstract: A method and structure for an electrode device, whereby a second electrode is deposited on a first electrode such that there is an increase in the capacitive coupling between the pair of conductive electrodes. The electrodes are self-aligning such that the patterning manufacturing process is insensitive to variations in the positional placement of the pattern on the substrate. Moreover, a single lithographic masking layer is used for forming the pair of electrodes, which are electrically isolated. Finally, the first electrode is offset from the second electrode by a chemical surface modification of the first electrode, and an anisotropic deposition of the second electrode which is shadowed by the first electrode.

Abstract: A hierarchical power supply noise monitoring device and system for very large scale integrated circuits. The noise-monitoring device is fabricated on-chip to measure the noise on the chip. The noise-monitoring system comprises a plurality of on-chip noise-monitoring devices distributed strategically across the chip. A noise-analysis algorithm analyzes the noise characteristics from the noise data collected from the noise-monitoring devices, and a hierarchical noise-monitoring system maps the noise of each core to the system on chip.