Patents by Inventor Li Su

Li Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240064021
    Abstract: The present disclosure provides an access control method, an access control apparatus, a network side device, a terminal and a blockchain node, wherein the access control method includes: receiving relevant information to be verified that is sent by a terminal and corresponds to an access request, wherein the relevant information to be verified includes private key signature information of the terminal and position information of preset information in the blockchain; acquiring the preset information from the blockchain according to the position information; verifying the terminal according to the private key signature information and the preset information; acquiring, in a case that verification is passed, attribute information of the terminal from a blockchain ledger according to the preset information; and feedbacking a request response for access control to the terminal according to the attribute information.
    Type: Application
    Filed: December 27, 2021
    Publication date: February 22, 2024
    Inventors: Junzhi YAN, Bo YANG, Li SU
  • Publication number: 20240056439
    Abstract: In a blockchain-based SDP access control method and apparatus, an SDP connection initiation host submits identity authentication request information to a blockchain system node, receives an authentication result feedback after verification; sends, to the blockchain system node, a query request for an SDP connection accepting host list that can be accessed, the query request including an authentication result of the blockchain system node for the SDP connection initiation host; after verifying the query request, the blockchain system node queries the SDP connection accepting host list that can be accessed by the SDP connection initiation host, and records the SDP connection accepting host list to a blockchain ledger; the SDP connection initiation host initiates a connection request to the SDP connection accepting host, queries the SDP connection accepting host list that can be accessed by the SDP connection initiation host; and if so, then access service is provided.
    Type: Application
    Filed: December 30, 2021
    Publication date: February 15, 2024
    Applicants: CHINA MOBILE COMMUNICATION CO., LTD RESEARCH INSTITUTE, CHINA MOBILE COMMUNICATIONS GROUP CO., LTD.
    Inventors: Junzhi YAN, Bo YANG, Li SU, Shen HE
  • Publication number: 20240022926
    Abstract: This disclosure relates to methods and devices for mitigating overheating in a user equipment device (UE). The UE is configured to communicate over each of LTE and 5G NR and may be configured to communicate through 5G NR over each of a Sub-6 GHz and a millimeter Wave (mmW) frequency band. The UE is configured to establish an ENDC connection with an enB and one or more gNBs. The UE implements intelligent transmission modification and cell measurement adjustments to mitigate overheating and reduce battery drain.
    Type: Application
    Filed: July 24, 2023
    Publication date: January 18, 2024
    Inventors: Alosious Pradeep Prabhakar, Wen Zhao, Lakshmi N. Kavuri, Li Su, Sagar B. Shah, Sriram Subramanian, Vijay Venkataraman, Vishwanth Kamala Govindaraju, Shiva Krishna Nana, Sanjeevi Balasubramanian, Wei Zhang, Madhukar D. Shanbhag, Sandeep K. Sunkesala, Srinivasan Nimmala, Muthukumaran Dhanapal, Tarakkumar G. Dhanani, Sree Ram Kodali, Ioannis Pefkianakis, Dhruv Khati, Franco Travostino, Thanigaivelu Elangovan, Madhusudan Chaudhary, Geoffrey R. Hall
  • Publication number: 20230422339
    Abstract: This disclosure relates to performing implicit radio resource control state transitions in a cellular communication system. A wireless device may establish a radio resource control (RRC) connection with a cellular base station. A data inactivity timer length and a target RRC state for implicit RRC transitions may be determined. A data inactivity timer having the determined data inactivity timer length may be initiated. It may be determined that the data inactivity timer has expired. The wireless device may transition to the target RRC state based at least in part on determining that the data inactivity timer has expired.
    Type: Application
    Filed: September 8, 2023
    Publication date: December 28, 2023
    Inventors: Sethuraman Gurumoorthy, Srirang A. Lovlekar, Murtaza A. Shikari, Srinivasan Nimmala, Haijing Hu, Fangli Xu, Yuqin Chen, Longda Xing, Xu Ou, Li Su, Vijay Venkataraman, Dawei Zhang, Muthukumaran Dhanapal, Sree Ram Kodali, Srinivas Burugupalli
  • Patent number: 11855188
    Abstract: A method includes forming a first semiconductor fin and a second semiconductor fin in an n-type Fin Field-Effect (FinFET) region and a p-type FinFET region, respectively, forming a first dielectric fin and a second dielectric fin in the n-type FinFET region and the p-type FinFET region, respectively, forming a first epitaxy mask to cover the second semiconductor fin and the second dielectric fin, performing a first epitaxy process to form an n-type epitaxy region based on the first semiconductor fin, removing the first epitaxy mask, forming a second epitaxy mask to cover the n-type epitaxy region and the first dielectric fin, performing a second epitaxy process to form a p-type epitaxy region based on the second semiconductor fin, and removing the second epitaxy mask. After the second epitaxy mask is removed, a portion of the second epitaxy mask is left on the first dielectric fin.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: December 26, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Chiang Chang, Ming-Hua Yu, Li-Li Su
  • Publication number: 20230397218
    Abstract: A downlink control information (DCI), such as a blanking DCI (bDCI) message may be transmitted by a base station (e.g., eNB) and received by a mobile device (e.g., UE). The bDCI may indicate that the eNB will not transmit a subsequent DCI to the UE for a duration of time. The UE may be in continuous reception mode or connected discontinuous reception (C-DRX) mode. The UE may therefore determine to enter a sleep state or take other action. The bDCI may specify an explicit blanking duration, or an index indicating a blanking duration from a lookup table, and/or the blanking duration (and/or a blanking duration offset value) may be determined in advance, e.g., semi-statically. When the UE is in C-DRX mode, the UE may be configured such that either the sleep/wake period of the C-DRX mode or the blanking period of the bDCI may take precedence over the other.
    Type: Application
    Filed: August 16, 2023
    Publication date: December 7, 2023
    Inventors: Johnson O. Sebeni, Yang Li, Zhu Ji, Yuchul Kim, Wei Zeng, Dawei Zhang, Haijing Hu, Xiangying Yang, Li Su
  • Publication number: 20230395434
    Abstract: A semiconductor device includes a fin-shape base protruding from a substrate, channel structures suspended above the fin-shape base, a gate structure wrapping around each of the channel structures, a source/drain (S/D) epitaxial feature abutting the channel structures and directly above a top surface of the fin-shape base, inner spacers interposing the S/D epitaxial feature and the gate structure, and a dielectric layer disposed vertically between the top surface of the fin-shape base and a bottom surface of the S/D epitaxial feature.
    Type: Application
    Filed: August 10, 2023
    Publication date: December 7, 2023
    Inventors: Bo-Yu Lai, Jyun-Chih Lin, Yen-Ting Chen, Wei-Yang Lee, Chia-Pin Lin, Wei Hao Lu, Li-Li Su
  • Publication number: 20230378176
    Abstract: A semiconductor device includes: a first fin and a second fin extending from a substrate and an epitaxial source/drain region. The epitaxial source/drain region includes a first portion grown on the first fin and a second portion grown on the second fin, and the first portion and the second portion are joined at a merging boundary.
    Type: Application
    Filed: July 31, 2023
    Publication date: November 23, 2023
    Inventors: Wei Hao Lu, Yi-Fang Pai, Cheng-Wen Cheng, Li-Li Su, Chien-I Kuo
  • Publication number: 20230377989
    Abstract: A method includes etching a first recess adjacent a first dummy gate stack and a first fin; etching a second recess adjacent a second dummy gate stack and a second fin; and epitaxially growing a first epitaxy region in the first recess. The method further includes depositing a first metal-comprising mask over the first dummy gate stack, over the second dummy gate stack, over the first epitaxy region in the first recess, and in the second recess; patterning the first metal-comprising mask to expose the first dummy gate stack and the first epitaxy region; epitaxially growing a second epitaxy region in the first recess over the first epitaxy region; and after epitaxially growing the second epitaxy region, removing remaining portions of the first metal-comprising mask.
    Type: Application
    Filed: August 4, 2023
    Publication date: November 23, 2023
    Inventors: Hui-Lin Huang, Li-Li Su, Yee-Chia Yeo, Chii-Horng Li
  • Patent number: 11824959
    Abstract: Systems, methods, and mechanisms for performing ROHC header compression on TCP packets with MPTCP option enabled. A compressor may determine that a first portion of the stream of data packets is formatted according to the transmission control protocol (TCP) with a multipath TCP (MPTCP) option enabled. The compressor may establish context with a corresponding decompressor and may operate in one of three modes of compression based on the context. In some embodiments, when the context indicates that the corresponding decompressor supports decompression of TCP data packets with MPTCP option enabled, the compressor may operate in a first or second mode of compression. In some embodiments, when the context indicates that the corresponding decompressor does not support decompression of TCP data packets with MPTCP option enabled, the compressor may operation in a third mode of compression.
    Type: Grant
    Filed: August 15, 2022
    Date of Patent: November 21, 2023
    Assignee: Apple, Inc.
    Inventors: Yingjie Zhao, Jianxiong Shi, Lele Cui, Li Su, Faraz Faheem
  • Publication number: 20230369502
    Abstract: A semiconductor device including a seeding layer in the source/drain region and a method of forming is provided. The semiconductor device may include a plurality of nanostructures over a substrate, a gate wrapping around the plurality of nanostructures, a source/drain region adjacent the plurality of nanostructures, and inner spacers between the source/drain region and the gate stack. The source/drain region may include a polycrystalline seeding layer covering sidewalls of the plurality of nanostructures and sidewalls of the inner spacers, and a semiconductor layer over the seeding layer. The semiconductor layer may have a higher dopant concentration than the seeding layer.
    Type: Application
    Filed: May 12, 2022
    Publication date: November 16, 2023
    Inventors: Shao-Yang Ma, Cheng-Yen Wen, Li-Li Su, Chil-Horng Li, Yee-Chia Yeo
  • Patent number: 11804487
    Abstract: A semiconductor device includes: a first fin and a second fin extending from a substrate and an epitaxial source/drain region. The epitaxial source/drain region includes a first portion grown on the first fin and a second portion grown on the second fin, and the first portion and the second portion are joined at a merging boundary. The epitaxial source/drain region further includes a first subregion extending from a location level with a highest point of the epitaxial source/drain region to a location level with a highest point of the merging boundary, a second subregion extending from the location level with the highest point of the merging boundary to a location level with a lowest point of the merging boundary, and a third subregion extending from the location level with the lowest point of the merging boundary to a location level with a top surface of an STI region.
    Type: Grant
    Filed: April 4, 2022
    Date of Patent: October 31, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei Hao Lu, Yi-Fang Pai, Cheng-Wen Cheng, Li-Li Su, Chien-I Kuo
  • Publication number: 20230343635
    Abstract: An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.
    Type: Application
    Filed: June 28, 2023
    Publication date: October 26, 2023
    Inventors: Yen-Ru Lee, Chii-Horng Li, Chien-I Kuo, Li-Li Su, Chien-Chang Su, Heng-Wen Ting, Jung-Chi Tai, Che-Hui Lee, Ying-Wei Li
  • Publication number: 20230343819
    Abstract: Provided is an epitaxial structure and a method for forming such a structure. The method includes forming a fin structure on a substrate, wherein the fin structure includes a semiconductor material having substantially a {110} crystallographic orientation. The method includes etching a portion of the fin structure to expose a sidewall portion of the semiconductor material. Further, the method includes growing an epitaxial structure on the sidewall of the semiconductor material, wherein the epitaxial structure propagates with facets having a {110} crystallographic orientation.
    Type: Application
    Filed: April 26, 2022
    Publication date: October 26, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Min Liu, Tsz-Mei Kwok, Yung-Chun Yang, Cheng-Yen Wen, Li-Li Su, Chii-Horng Li, Yee-Chia Yeo, Hui-Lin Huang
  • Publication number: 20230343855
    Abstract: A method for manufacturing an integrated circuit (IC) structure is provided. The method includes: etching a first recess and a second recess in a substrate; forming a sacrificial epitaxial plug in the first recess in the substrate; forming a first epitaxial feature and a second epitaxial feature respectively in the first recess and the second recess, wherein the first epitaxial feature is over the sacrificial epitaxial plug; forming a first source/drain epitaxial structure and a second source/drain epitaxial structure over the first epitaxial feature and the second epitaxial feature respectively; forming a gate structure laterally between the first source/drain epitaxial structure and the second source/drain epitaxial structure; removing the sacrificial epitaxial plug and the first epitaxial feature to form a backside via opening exposing a backside of the first source/drain epitaxial structure; and forming a backside via in the backside via opening.
    Type: Application
    Filed: June 23, 2023
    Publication date: October 26, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wei-Hao LU, Chien-I KUO, Li-Li SU, Wei-Yang LEE, Yee-Chia YEO
  • Patent number: 11792878
    Abstract: This disclosure relates to performing implicit radio resource control state transitions in a cellular communication system. A wireless device may establish a radio resource control (RRC) connection with a cellular base station. A data inactivity timer length and a target RRC state for implicit RRC transitions may be determined. A data inactivity timer having the determined data inactivity timer length may be initiated. It may be determined that the data inactivity timer has expired. The wireless device may transition to the target RRC state based at least in part on determining that the data inactivity timer has expired.
    Type: Grant
    Filed: September 23, 2021
    Date of Patent: October 17, 2023
    Assignee: Apple Inc.
    Inventors: Sethuraman Gurumoorthy, Srirang A. Lovlekar, Murtaza A. Shikari, Srinivasan Nimmala, Haijing Hu, Fangli Xu, Yuqin Chen, Longda Xing, Xu Ou, Li Su, Vijay Venkataraman, Dawei Zhang, Muthukumaran Dhanapal, Sree Ram Kodali, Srinivas Burugupalli
  • Patent number: 11785545
    Abstract: Methods related to an inactive state of a user equipment (UE). In one example, when an amount of data in an uplink buffer is less than a threshold, the data is sent to the network while remaining in the inactive state. In another example, when reselecting to a different cell, the UE attempts to reselect to the different cell and remain in the inactive state. When transitioning to a connected state at the reselected cell, the UE sends a resume request including an identification of the first cell. In another example, when a high priority or a background PLMN search is performed in the inactive state, the results are cached and implemented the earlier of when a timer expires or the UE enters an idle state. In another example, a cell reselection criteria is altered in the inactive state to make it less likely that a cell reselection will occur.
    Type: Grant
    Filed: June 15, 2022
    Date of Patent: October 10, 2023
    Assignee: Apple Inc.
    Inventors: Li Su, Muthukumaran Dhanapal, Vijay Venkataraman, Srinivas Burugupalli
  • Publication number: 20230317785
    Abstract: A device includes a first nanostructure over a substrate and a first source/drain region adjacent the first nanostructure. The first source/drain region includes a first epitaxial layer covering a first sidewall of the first nanostructure. The first epitaxial layer has a first concentration of a first dopant. The first epitaxial layer has a round convex profile opposite the first sidewall of the first nanostructure in a cross-sectional view. The first source/drain region further includes a second epitaxial layer covering the round convex profile of the first epitaxial layer in the cross-sectional view. The second epitaxial layer has a second concentration of the first dopant, the second concentration being different from the first concentration.
    Type: Application
    Filed: April 4, 2022
    Publication date: October 5, 2023
    Inventors: Yung-Chun Yang, Wei Hao Lu, Wei-Min Liu, Li-Li Su, Chii-Horng Li, Yee-Chia Yeo
  • Publication number: 20230299180
    Abstract: The present disclosure is directed to methods for forming source/drain (S/D) epitaxial structures with a hexagonal shape. The method includes forming a fin structure that includes a first portion and a second portion proximate to the first portion, forming a gate structure on the first portion of the fin structure, and recessing the second portion of the fin structure. The method further includes growing a S/D epitaxial structure on the recessed second portion of the fin structure, where growing the S/D epitaxial structure includes exposing the recessed second portion of the fin structure to a precursor and one or more reactant gases to form a portion of the S/D epitaxial structure. Growing the S/D epitaxial structure further includes exposing the portion of the S/D structure to an etching chemistry and exposing the portion of the S/D epitaxial structure to a hydrogen treatment to enhance growth of the S/D epitaxial structure.
    Type: Application
    Filed: May 2, 2023
    Publication date: September 21, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO, LTD.
    Inventors: Wei-Min LIU, Yee-Chia YEO, Li-Li SU
  • Patent number: 11765778
    Abstract: This disclosure relates to techniques for supporting narrowband device-to-device wireless communication, including possible techniques for performing discovery in an off grid radio system. According to some embodiments, a wireless device may determine a number of synchronization signal repetitions to use for a narrowband device-to-device transmission. The wireless device may perform the transmission, including transmitting the determined number of synchronization signal repetitions. The transmission may include an indication of the number of synchronization signal repetitions used in the transmission.
    Type: Grant
    Filed: January 13, 2022
    Date of Patent: September 19, 2023
    Assignee: Apple Inc.
    Inventor: Li Su