Abstract: In an embodiment, a device includes: a semiconductor fin extending from a semiconductor substrate; a nanostructure above the semiconductor fin; a source/drain region adjacent a channel region of the nanostructure; a bottom spacer between the source/drain region and the semiconductor fin; and a gap between the bottom spacer and the source/drain region.

Abstract: A downlink control information (DCI), such as a blanking DCI (bDCI) message may be transmitted by a base station (e.g., eNB) and received by a mobile device (e.g., UE). The bDCI may indicate that the eNB will not transmit a subsequent DCI to the UE for a duration of time. The UE may be in continuous reception mode or connected discontinuous reception (C-DRX) mode. The UE may therefore determine to enter a sleep state or take other action. The bDCI may specify an explicit blanking duration, or an index indicating a blanking duration from a lookup table, and/or the blanking duration (and/or a blanking duration offset value) may be determined in advance, e.g., semi-statically. When the UE is in C-DRX mode, the UE may be configured such that either the sleep/wake period of the C-DRX mode or the blanking period of the bDCI may take precedence over the other.

Abstract: An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.

Abstract: An embodiment is a method including forming a raised portion of a substrate, forming fins on the raised portion of the substrate, forming an isolation region surrounding the fins, a first portion of the isolation region being on a top surface of the raised portion of the substrate between adjacent fins, forming a gate structure over the fins, and forming source/drain regions on opposing sides of the gate structure, wherein forming the source/drain regions includes epitaxially growing a first epitaxial layer on the fin adjacent the gate structure, etching back the first epitaxial layer, epitaxially growing a second epitaxial layer on the etched first epitaxial layer, and etching back the second epitaxial layer, the etched second epitaxial layer having a non-faceted top surface, the etched first epitaxial layer and the etched second epitaxial layer forming source/drain regions.

Abstract: Apparatuses, systems, and methods for a wireless device to perform methods for improvements to security checks in a fifth generation (5G) New Radio (NR) network, including mechanisms to avoid redundant access stratum (AS) security checks. The wireless device may determine that an on-demand system information block (SIB) request is pending transmission and may buffer the on-demand SIB in response to determining that a connection establishment procedure will be initiated within a specified time period. The wireless device may then perform a unified security procedure for the on-demand SIB request and the connection establishment procedure, including confirming connection security. Further, in response to confirming connection security, the wireless device may use an on-demand SIB received from the network without confirming a corresponding on-demand SIB signature.

Abstract: A semiconductor device includes a first device region and a second device region. The first device region includes a first source/drain region extending from a substrate and a first and a second pair of spacers. The first source/drain region extends between the first pair of spacers and the second pair of spacers. The first pair of spacers and the second pair of spacers have a first height. The second device region includes a second and a third source/drain region extending from the substrate and a third and a fourth pair of spacers. The third source/drain region is separate from the second source/drain region. The second source/drain region extends between the third pair of spacers. The third source/drain region extends between the fourth pair of spacers. The third pair of spacers and the fourth pair of spacers have a second height greater than the first height.

Abstract: A method for manufacturing an integrated circuit (IC) structure is provided. The method includes: etching a first recess and a second recess in a substrate; forming a sacrificial epitaxial plug in the first recess in the substrate; forming a first epitaxial feature and a second epitaxial feature respectively in the first recess and the second recess, wherein the first epitaxial feature is over the sacrificial epitaxial plug; forming a first source/drain epitaxial structure and a second source/drain epitaxial structure over the first epitaxial feature and the second epitaxial feature respectively; forming a gate structure laterally between the first source/drain epitaxial structure and the second source/drain epitaxial structure; removing the sacrificial epitaxial plug and the first epitaxial feature to form a backside via opening exposing a backside of the first source/drain epitaxial structure; and forming a backside via in the backside via opening.

Abstract: This disclosure relates to techniques for supporting message mapping via time and/or frequency indexing. For example, these techniques may be applied to device-to-device wireless communication. For example, device to device discovery may use message mapping via frequency indexing. A portion of the payload of a message, such as a discovery message, may be offloaded to a frequency and/or time index. A receiving device may determine the offloaded portion of the payload based on the frequency and/or time (e.g., subcarrier and/or slot) used to transmit the message.

Abstract: A method includes forming a stack of layers, which includes a plurality of semiconductor nano structures and a plurality of sacrificial layers. The plurality of semiconductor nano structures and the plurality of sacrificial layers are arranged alternatingly. The method further includes laterally recessing the plurality of sacrificial layers to form lateral recesses, forming inner spacers in the lateral recesses, and epitaxially growing a source/drain region from the plurality of semiconductor nano structures. The source/drain region is spaced apart from the inner spacers by air inner spacers.

Abstract: The present disclosure is directed to methods for forming source/drain (S/D) epitaxial structures with a hexagonal shape. The method includes forming a fin structure that includes a first portion and a second portion proximate to the first portion, forming a gate structure on the first portion of the fin structure, and recessing the second portion of the fin structure. The method further includes growing a S/D epitaxial structure on the recessed second portion of the fin structure, where growing the S/D epitaxial structure includes exposing the recessed second portion of the fin structure to a precursor and one or more reactant gases to form a portion of the S/D epitaxial structure. Growing the S/D epitaxial structure further includes exposing the portion of the S/D structure to an etching chemistry and exposing the portion of the S/D epitaxial structure to a hydrogen treatment to enhance growth of the S/D epitaxial structure.

Abstract: This disclosure relates to techniques for a wireless device to perform low latency communication using historical beam information. The wireless device may establish a radio resource control connection, and may subsequently release the resource control connection. The wireless device may store antenna element and beam information for the resource control connection. The wireless device may determine whether to use the stored antenna element and beam information when establishing another radio resource control connection. If the wireless device determines to do so, the wireless device may use the stored antenna element and beam information when establishing that radio resource control connection.

Abstract: A process for dual subscriber identity module (SIM) dual standby (DR-DSDS) operation including receiving event data indicating a trigger event configuring radio frequency (RF) hardware; identifying a conflict between a communication band of a first SIM and a communication band of a second SIM for DR-DSDS operation; determining a type of the conflict; determining, a first priority value for a component carrier (CC) corresponding to the first SIM, and a second priority value for a CC corresponding to the second SIM, the first and second priority values based at least on the type of the conflict; determining a timing scenario for configuring the RF hardware; searching for a RF hardware configuration to resolve the conflict based on the first and second priority values; and generating RF handle data, corresponding to the conflict resolution, specifying a RF hardware configuration for the DR-DSDS operation.

Abstract: This disclosure relates to techniques for supporting narrowband device-to-device wireless communication, including possible techniques for providing synchronization sequences. A first wireless device may transmit a preamble of a device-to-device wireless communication with a second wireless device. The preamble may include a first synchronization sequence. The first synchronization sequence may include multiple repetitions of a basis sequence, multiplied by a cover code. The basis sequence may span multiple orthogonal frequency division multiplexing symbols.

Abstract: Apparatuses, systems, and methods for a wireless device to perform methods for improvements to security checks in a fifth generation (5G) New Radio (NR) network, including mechanisms to avoid redundant access stratum (AS) security checks. The wireless device may determine that an on-demand system information block (SIB) request is pending transmission and may buffer the on-demand SIB in response to determining that a connection establishment procedure will be initiated within a specified time period. The wireless device may then perform a unified security procedure for the on-demand SIB request and the connection establishment procedure, including confirming connection security. Further, in response to confirming connection security, the wireless device may use an on-demand SIB received from the network without confirming a corresponding on-demand SIB signature.

Abstract: Disclosed are embodiments for reducing likelihood of selecting a cell identified by a Radio Access Network (RAN) Notification Area ID (RNA ID) that is different from that identifying a last or current serving cell so as to avoid an RNA update procedure; reducing Random Access Channel (RACH) transmissions for an RNA update procedure and a mobile originated (MO) data transmission in response to a Radio Resource Control (RRC) triggered RNA update procedure; and selecting a band or beam in a multi-band/beam cellular system that improves RACH efficiency.

Abstract: A semiconductor device includes a first device region and a second device region. The first device region includes a first source/drain region extending from a substrate and a first and a second pair of spacers. The first source/drain region extends between the first pair of spacers and the second pair of spacers. The first pair of spacers and the second pair of spacers have a first height. The second device region includes a second and a third source/drain region extending from the substrate and a third and a fourth pair of spacers. The third source/drain region is separate from the second source/drain region. The second source/drain region extends between the third pair of spacers. The third source/drain region extends between the fourth pair of spacers. The third pair of spacers and the fourth pair of spacers have a second height greater than the first height.

Abstract: An embodiment is a method including forming a raised portion of a substrate, forming fins on the raised portion of the substrate, forming an isolation region surrounding the fins, a first portion of the isolation region being on a top surface of the raised portion of the substrate between adjacent fins, forming a gate structure over the fins, and forming source/drain regions on opposing sides of the gate structure, wherein forming the source/drain regions includes epitaxially growing a first epitaxial layer on the fin adjacent the gate structure, etching back the first epitaxial layer, epitaxially growing a second epitaxial layer on the etched first epitaxial layer, and etching back the second epitaxial layer, the etched second epitaxial layer having a non-faceted top surface, the etched first epitaxial layer and the etched second epitaxial layer forming source/drain regions.

Abstract: Aspects are described for a user equipment (UE) comprising a transceiver configured to enable wireless communication with a base station, and a processor communicatively coupled to the transceiver. The processor is configured to enter a radio resource control (RRC) idle mode. The processor is further configured to measure at least one cell of a set of cells in a sleep period, wherein the sleep period is indicated in a discontinuous reception (DRX) configuration message received from the base station. The processor is further configured to receive a UE information request from the base station responsive to entering an RRC connected mode and transmit results of the measurement to the base station responsive to the UE information request to enable faster carrier addition by a network the UE connects to.

Abstract: A method of forming a semiconductor includes forming a first recess in a first semiconductor fin protruding from a substrate and forming a second recess in a second semiconductor fin protruding from the substrate first semiconductor fin and forming a source/drain region in the first recess and the second recess. Forming the source/drain region includes forming a first portion of a first layer in the first recess and forming a second portion of the first layer in the second recess, forming a second layer on the first layer by flowing a first precursor, and forming a third layer on the second layer by flowing a second precursor, the third layer being a single continuous material.

Abstract: An embodiment includes a device including a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes and a first source/drain region in the first fin and adjacent the first gate spacer, the first source/drain region including a first carbon-containing buffer layer on the first fin. The device also includes and a first epitaxial structure on the first carbon-containing buffer layer.