Abstract: The present disclosure provides a semiconductor structure including a semiconductor substrate having a device region and a dummy region adjacent the device region; a plurality of active regions in the device region; and a plurality of dummy active regions in the dummy region, where each of the active regions has a first dimension in a first direction and a second dimension in a second direction perpendicular to the first direction, and the first dimension is substantially greater than the second dimension; and each of the dummy active regions has a third dimension in the first direction and a fourth dimension in the second direction, and the third dimension is substantially greater than the fourth dimension. The plurality of dummy active regions are configured such that thermal annealing effect in the dummy region is substantially equal to that of the device region.

Abstract: A laser apparatus with all optical-fiber includes a plurality of pumping light sources in different wave bands and an optical-fiber laser system. The optical-fiber laser system includes an optical fiber at least doped with erbium (Er) element and doped with or not doped with ytterbium (Yb) element according to a need. The optical-fiber laser system outputs a laser light through the pumping light source.

Abstract: An all-fiber color laser and a light-illuminating method thereof are disclosed. The steps of the light-illuminating method include: providing a fiber color laser having a pump light source and an optical fiber with a multi-level wavelength gain medium, a first grating assembly and a second grating assembly; radiating a laser via the pump light source; generating a plurality of laser beams with various wavelengths via the multi-level wavelength gain medium; adjusting the deformation of the second grating assembly to control output of the laser beams with various wavelengths; and executing periodical modulation to generate a periodical lengthwise deformation of the second grating assembly for mixing color.

Abstract: A heat dissipating module includes a heat dissipating unit, a heat collecting plate with a position limiting hole, a heat conducting member connected between the heat dissipating element and the heat collecting plate, and a fixing structure. The fixing structure includes two end portions, an arcuate elastic portion, and a position limiting portion connected to the arcuate elastic portion and extending through the position limiting hole. Each end portion is slidably disposed on the heat collecting plate. The arcuate elastic portion is connected between the two end portions and adapted to be fastened to the heat collecting plate and a base, such that an electrical component is sandwiched in between the heat collecting plate and the base.

Abstract: A method for treating waste gas containing inorganic acid is disclosed. The method includes the following steps: (a) forming a mixture of inorganic acidic gas and a nebulized alkaline solution wherein the nebulized alkaline solution can be produced continuously or periodically; (b) forcing the mixture to pass through an adsorbent bed; and (c) releasing the treated gas. An apparatus for treating the inorganic acid gas with the method illustrated above is also disclosed here. The method can regenerate poisoned adsorbents online, and save time, space and cost simultaneously.

Abstract: An annealing method includes performing an activation annealing on a wafer with a peak temperature of greater than about 1200° C., wherein the activation annealing has a first duration; and performing a defect-recovery annealing on the wafer at a defect-recovery temperature lower than the peak temperature for a second duration. The second duration is longer than the first duration. The annealing method includes no additional annealing steps at temperatures greater than about 1200° C., and no room-temperature cooling step exists between the activation annealing and the defect-recovery annealing.

Abstract: A laser apparatus with all optical-fiber includes a plurality of pumping light sources in different wave bands and an optical-fiber laser system. The optical-fiber laser system includes an optical fiber at least doped with erbium (Er) element and doped with or not doped with ytterbium (Yb) element according to a need. The optical-fiber laser system outputs a laser light through the pumping light source.

Abstract: A semiconductor device includes a gate stack over a semiconductor substrate, a lightly doped n-type source/drain (LDD) region in the semiconductor substrate and adjacent the gate stack wherein the LDD region comprises an n-type impurity, a heavily doped n-type source/drain (N+ S/D) region in the semiconductor substrate and adjacent the gate stack wherein the N+ S/D region comprises an n-type impurity, a pre-amorphized implantation (PAI) region in the semiconductor substrate wherein the PAI region comprises an end of range (EOR) region, and an interstitial blocker region in the semiconductor substrate wherein the interstitial blocker region has a depth greater than a depth of the LDD region but less than a depth of the EOR region.

Abstract: A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric layer over the semiconductor substrate; forming a gate electrode layer over the gate dielectric layer; doping carbon and nitrogen into the gate electrode layer; and, after the step of doping carbon and nitrogen, patterning the gate dielectric layer and the gate electrode layer to form a gate dielectric and a gate electrode, respectively.

Abstract: An all-fiber color laser and a light-illuminating method thereof are disclosed. The steps of the light-illuminating method include: providing a fiber color laser having a pump light source and an optical fiber with a multi-level wavelength gain medium, a first grating assembly and a second grating assembly; radiating a laser via the pump light source; generating a plurality of laser beams with various wavelengths via the multi-level wavelength gain medium; adjusting the deformation of the second grating assembly to control output of the laser beams with various wavelengths; and executing periodical modulation to generate a periodical lengthwise deformation of the second grating assembly for mixing color.

Abstract: A laser surgical apparatus is provided. The laser surgical apparatus includes a laser generator, a laser delivery module for delivering a laser beam to biological tissues, a fluid source, a fluid delivery module for delivering a fluid to the biological tissues, and a control module for controlling all the above units.

Abstract: A heat dissipating module includes a heat dissipating unit, a heat collecting plate with a position limiting hole, a heat conducting member connected between the heat dissipating element and the heat collecting plate, and a fixing structure. The fixing structure includes two end portions, an arcuate elastic portion, and a position limiting portion connected to the arcuate elastic portion and extending through the position limiting hole. Each end portion is slidably disposed on the heat collecting plate. The arcuate elastic portion is connected between the two end portions and adapted to be fastened to the heat collecting plate and a base, such that an electrical component is sandwiched in between the heat collecting plate and the base.

Abstract: A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric layer over the semiconductor substrate; forming a gate electrode layer over the gate dielectric layer; doping carbon and nitrogen into the gate electrode layer; and, after the step of doping carbon and nitrogen, patterning the gate dielectric layer and the gate electrode layer to form a gate dielectric and a gate electrode, respectively.

Abstract: A method for forming a semiconductor structure includes providing a semiconductor substrate, forming a gate stack on the semiconductor substrate, and epitaxially growing a lightly-doped source/drain (LDD) region adjacent the gate stack, wherein carbon is simultaneously doped into the LDD region.

Abstract: A method of forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric over the semiconductor substrate; forming a gate electrode on the gate dielectric; forming a source/drain region adjacent the gate dielectric and the gate electrode; forming an absorption-capping layer over the source/drain region and the gate electrode; performing an activation by applying a high-energy light to the absorption-capping layer; and removing the absorption-capping layer.

Abstract: A method for treating waste gas containing inorganic acid is disclosed. The method includes the following steps: (a) forming a mixture of inorganic acidic gas and a nebulized alkaline solution wherein the nebulized alkaline solution can be produced continuously or periodically; (b) forcing the mixture to pass through an adsorbent bed; and (c) releasing the treated gas. An apparatus for treating the inorganic acid gas with the method illustrated above is also disclosed here. The method can regenerate poisoned adsorbents online, and save time, space and cost simultaneously.

Abstract: A method of enhancing dopant activation without suffering additional dopant diffusion, includes forming shallow and lightly-doped source/drain extension regions in a semiconductor substrate, performing a first anneal process on the source/drain extension regions, forming deep and heavily-doped source/drain regions in the substrate adjacent to the source/drain extension regions, and performing a second anneal process on source/drain regions. The first anneal process is a flash anneal process performed for a time of between about 1 millisecond and 3 milliseconds, and the second anneal process is a rapid thermal anneal process performed for a time of between about 1 second and 30 seconds.

Abstract: A method of forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric over the semiconductor substrate; forming a gate electrode on the gate dielectric; forming a source/drain region adjacent the gate dielectric and the gate electrode; forming an absorption-capping layer over the source/drain region and the gate electrode; performing an activation by applying a high-energy light to the absorption-capping layer; and removing the absorption-capping layer.

Abstract: A method for forming a semiconductor structure includes providing a semiconductor substrate, forming a gate stack on the semiconductor substrate, and epitaxially growing a lightly-doped source/drain (LDD) region adjacent the gate stack, wherein carbon is simultaneously doped into the LDD region.

Abstract: A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate; forming a gate dielectric over the semiconductor substrate; forming a gate electrode on the gate dielectric; forming a stressor in the semiconductor substrate adjacent to an edge of the gate electrode; and tilt implanting an impurity after the step of forming the stressor. The impurity is preferably selected from the group consisting essentially of group IV elements, inert elements, and combinations thereof.