Abstract: The present invention relates to a recombinant antigen and an isolated polynucleotide of porcine reproductive and respiratory syndrome virus (PRRSV), a composition including the same and a method of making the same. The recombinant antigen is a chimeric protein of PRRSV dual structural proteins and T-cell epitope. The polynucleotide encodes an amino acid sequence of the recombinant antigen. The recombinant protein expressed by the polynucleotide in an eukaryotic expression system can be beneficial for mass production and purification. An immunogenic composition including the recombinant antigen can promote pro-inflammatory M1-phenotype polarization of porcine alveolar macrophages (PAMs), reduce receptor CD163 expression that is mediated for viral entry and activate T helper (Th1) immune responses, thereby being applied to a vaccine composition against PRRSV.

Abstract: In a micro-electromechanical system (MEMS) structure, at least one chemical stop structure is formed to reduce inadvertent etching of adhesion layers. A first adhesion layer and a second adhesion layer are separated by a primary dielectric layer. The primary dielectric layer includes a recess that forms a stair. The second adhesion layer includes an annular opening, and a protective material covers the sides of the second adhesion layer in the annular opening. A base plate layer covers the second adhesion layer and fills the recess and the annular opening. An annular via passes through the base plate layer and the protective material down to the primary dielectric layer. The protective material and the base plate layer each act as chemical stop structures that separate the first adhesion layer from the second adhesion layer.

Abstract: A switch plate for a computer peripheral device. The switch plate includes a substrate having an upper surface and a lower surface, wherein the substrate comprises a rigid polymeric material. The switch plate including a gasket coupled with the lower surface of the substrate. The gasket comprises a resilient polymeric material. The substrate and the gasket are co-molded.

Abstract: A package structure includes a thermal dissipation structure including a substrate, a first encapsulant laterally covering the substrate, a die disposed on the substrate and including a sensing region, a second encapsulant laterally covering the die, and a redistribution structure disposed on the die and the second encapsulant. An outer sidewall of the second encapsulant is laterally offset from an outer sidewall of the first encapsulant. The die is electrically coupled to the substrate through the redistribution structure, and the redistribution structure includes a hollow region overlying the sensing region of the die.

Abstract: The present disclosure provides an integrated circuit (IC) structure that includes an IC packaging structure having an IC chip; and a thermoelectric self-cooling device (TESCD) integrated with the IC packaging structure. The TESCD further includes a thermoelectric cooling (TEC) device having a plurality of TEC units configured in an array and electrically connected to provide cooling effect to the IC packaging structure, and a liquid cooling module having a cooling liquid driving device and a generator coupled with the cooling liquid driving device to collectively generate an electrical power supplied to the TEC device with self-cooling function to the IC packaging structure.

Abstract: An integrated circuit package and the method of forming the same are provided. An integrated circuit package may include a first die having a first substrate over a package substrate and a lid. A first channel may extend through the first substrate from a first sidewall of the first die to a second sidewall of the first die. The lid may include a top portion over the first die and a first bottom portion extending along the first sidewall of the first die. The first bottom portion may include a second channel connected to the first channel.

Abstract: A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.

Abstract: A manufacturing method of a semiconductor package includes the following steps. A semiconductor device is attached to a carrier by an adhesive layer on the carrier. The semiconductor device is encapsulated by an encapsulating material. A redistribution structure is provided over the semiconductor device and the encapsulating material. The carrier is removed. The adhesive layer is partially removed by anisotropic etching process to form an adhesive residue, wherein the adhesive residue at least reveals a back surface of the semiconductor device and at least partially covers the encapsulating material.

Abstract: Embodiments described herein relate to chamber component cleaning systems and methods for cleaning a chamber component. The chamber component cleaning system includes a spray station, at least a first cleaning station, a dry station, a component transfer mechanism, and one or more enclosures that enclose the spray station, at least the first cleaning station, the dry station, and the component transfer mechanism. The spray station has a holder to position a chamber component in a path of a flow of a cleaning spray and a movable nozzle to provide the flow of the cleaning spray at a first pressure in a path of portions of the chamber component. The first cleaning station has a push mechanism to force a cleaning fluid through features and/or holes of the chamber component and at least one movable transducer to provide ultrasonic energy to the portions of the chamber component.

Abstract: A method of forming a semiconductor device having a capacitor array includes forming a top electrode plate of the capacitor array in an active region and a periphery region of a substrate; depositing a first oxide layer above the top electrode plate in the active region and the periphery region; removing the top electrode plate in the periphery region; forming a nitride film on the first oxide layer in the active region and in the periphery region; depositing a second oxide layer on the nitride film in the active region and the periphery region; and polishing the second oxide layer to expose the nitride film in the active region.

Abstract: Devices and systems for droplet generation and methods for generating droplets are described. In an embodiment, the devices and systems include a capillary configured to eject a droplet, such as in response to a voltage applied to an end of the capillary. In an embodiment, the devices and systems include a moveable stage configured to carry a multi-well plate and move the stage relative to the capillary such that the ejected droplet is selectively received by a well of the multi-well plate carried by the moveable stage.

Abstract: Provided is a wide angle application high reflective mirror having a reflection band partially overlapping in a wavelength range of 800-4000 nm. The mirror comprises a film system in which a plurality of high refractive index film layers and a plurality of low refractive index film layers that are alternately stacked, and the material of the high refractive index film layer is one of SiH, SiOxHy, or SiOxNy, or a mixture thereof. The highly reflective mirror can achieve a reflectance greater than 99% with an incident angle ranging from 0 to 60 degrees over a large angle range.

Abstract: A semiconductor package includes a semiconductor device, an encapsulating material, a redistribution structure, and an adhesive residue. The encapsulating material encapsulates a first part of a side surface of the semiconductor device. The redistribution structure is disposed over the semiconductor device and a first side of the encapsulating material. The adhesive residue is disposed over a second side of the encapsulating material opposite to the first side and surrounding the semiconductor device, wherein the adhesive residue encapsulates a second part of the side surface of the semiconductor device.

Abstract: An auxiliary support device for a rolling-cut shear, including: a lower cutting table; a plurality of first hydraulic support cylinders, a plurality of support plates, a plurality of second hydraulic support cylinders shorter than the first hydraulic support cylinders, a slide plate, and a plurality of horizontal hydraulic cylinders. The lower cutting table includes a first front end including a first mounting groove, and a second mounting groove, and an inner plate. The bottom wall of the second mounting groove includes a plurality of first bolt holes and a plurality of first recesses. The inner plate is embedded in the second mounting groove through a plurality of bolts passing through the plurality of first bolt holes. The inner plate includes a plurality of second bolt holes and a plurality of second recesses. The plurality of support plates lean against the inner plate.

Abstract: A power device threshold voltage measurement circuit and its operation method thereof are provided. The measurement circuit includes a switch component, a device under test, a common source capacitor and a decoupling capacitor. The switch component and the device under test forms a half bridge circuit and the common source capacitor is in series connected at the source of the device under test. The device under test is connected as a lower switch of the half bridge circuit and the decoupling capacitor is connected between the device under test and the common source capacitor. By applying an OFF-state stress mode and a measurement mode successively afterwards, a threshold voltage of the device under test is obtained. And the present invention is beneficial to achieving in shorter pulse width, faster measuring speed and inexpensive measuring equipment, and can thus be widely applied to group III-N based power devices.

Abstract: Disclosed are a bonding system and a bonding method. In one embodiment, the bonding system includes a chamber, first and second electrostatic chucks, a visible light sensor module and a nonvisible light module. The chamber is configured to provide a vacuum state. The first electrostatic chuck is configured to hold a first substrate having a first alignment mark in the chamber, wherein the first electrostatic chuck has a first window. The second electrostatic chuck is configured to hold a second substrate having a second alignment mark in the chamber, wherein the second electrostatic chuck has a second window. The visible light sensor module is configured to capture images of the first and the second alignment marks. The nonvisible light module is configured to capture a combined image of the first and second alignment marks via the first and second windows overlapping each other in the vacuum state.

Abstract: The present disclosure provides a method and a system for image generation. The method may include: obtaining an initial image, the initial image being an image generated by a generator and including a specified target; determining, in the initial image, a partial image of the specified target; generating a fusion image including the specified target by performing an image fusion based on a background image and the partial image of the specified target; and generating a target sample image based on the fusion image.

Abstract: In an embodiment, a device includes: a sensor die having a first surface and a second surface opposite the first surface, the sensor die having an input/output region and a first sensing region at the first surface; an encapsulant at least laterally encapsulating the sensor die; a conductive via extending through the encapsulant; and a front-side redistribution structure on the first surface of the sensor die, the front-side redistribution structure being connected to the conductive via and the sensor die, the front-side redistribution structure covering the input/output region of the sensor die, the front-side redistribution structure having a first opening exposing the first sensing region of the sensor die.

Abstract: The application discloses a device and method for beamforming. The beamforming method comprises: sending a null data packet announcement (NDPA) frame from a beamformer to a pseudo user and a target user to indicate the target user to prepare for channel estimation; sending a null data packet (NDP) from the beamformer to the target user and performing channel estimation by the target user based on the NDP to determine channel state information; sending a beamforming report poll (BRP) trigger frame from the beamformer to the target user to trigger the target user to feed back channel state information; and sending from the target user a beamforming report to the beamformer, wherein the beamforming report including the channel state information.