Abstract: Methods and apparatuses for reducing artifacts in magnetic resonance imaging are described. The method may include: according to a size and a spatial position of each blade in a BLADE sequence used for a formal scan, determining an image subregion corresponding to each blade in an aliasing-free prescan MR image; according to the image subregion corresponding to each blade, obtaining an aliasing-free image corresponding to each blade; according to the aliasing-free image corresponding to each blade, acquiring a GRAPPA kernel corresponding to each blade; acquiring k-space data of each blade acquired during a formal scan of an imaging target; based on the k-space data and the GRAPPA kernel of each blade, obtaining k-space data of each blade after field-of-view expansion; and reconstructing the k-space data of all the blades after field-of-view expansion to obtain a formal scan MR image of the imaging target.

Abstract: A gene sequencing data analysis method is applied to a user equipment. The gene sequencing data analysis method includes: encoding gene sequencing data of a user to obtain a plurality of gene sequencing plaintexts corresponding to the gene sequencing data; using a public key to encrypt each of the gene sequencing plaintexts to obtain a plurality of gene sequencing ciphertexts; transmitting the gene sequencing ciphertexts to a server; receiving a gene sequencing data analysis result ciphertext sent by the server; and using a private key to decrypt the gene sequencing data analysis result ciphertext to determine a gene sequencing data analysis result of the user.

Abstract: A method and apparatus for precoding are based on a reconfigurable intelligent surface. A first network device obtains unit arrangement information and block information of a second network device, wherein the block information indicates a plurality of blocks of the second network device; receives channel feedback information sent by a terminal; and sends first information to the second network device, wherein the first information is used for determining a phase shift matrix of the second network device, and the first information includes the channel feedback information and location information of the terminal relative to the second network device.

Abstract: A precoding method based on an RIS includes: acquiring unit arrangement information and block information of a second network device, determining at least one target block for sending a reference signal from a plurality of blocks in the second network device, receiving channel feedback information sent by a terminal, determining first indication information according to the channel feedback information, and sending the first indication information to the second network device. The block information indicates the plurality of blocks in the second network device. The channel feedback information is determined by the terminal based on the reference signal sent by the at least one target block. The first indication information is used to determine a phase shift matrix for the second network device.

Abstract: The techniques describe dynamic content-aware data sampling that adjusts a sampling rate of data associated with a service based on the content of the data. More specifically, if the data to be logged indicates that the service is operating normally, then the sampling rate is adjusted lower as the logged data has limited purpose provided the service is likely not experiencing an issue. In contrast, if the data indicates that the service is operating abnormally, then the sampling rate is adjusted higher as the logged data has elevated purpose provided the service may be experiencing an issue. The dynamic content-aware data sampling is implemented using program code generated by an artificial intelligence agent (e.g., a generative language model) based on service owner requirements, as well as historical data patterns and/or usage patterns.

Abstract: A method for sending precoding information is executed by a first network side device. The method includes: obtaining a capability value of a second network side device, wherein the capability value is a time required by the second network side device to complete precoding or beam switching in a case of a precoding change or beam information change; and sending the precoding information to the second network side device.

Abstract: The Bacillus subtilis ZF-1 and use thereof in inhibiting African swine fever virus are provided. A Bacillus subtilis strain (CCTCC NO: M2022185) is screened and selected from 95 self-preserved strains with an inhibiting effect on African swine fever virus. The strain has a remarkable anti-ASFV effect in vivo and in vitro through anti-infection research at a cell level and an animal body level, can reduce proliferation of the virus in a pig body and damage of ASFV infection to tissues and organs, can effectively control adverse effects of ASFV infection on the body, and can be used for preventing and controlling African swine fever epidemics.

Abstract: A precoding method, which is performed by a first network device and includes: determining phase shift matrix indication information for a second network device; and sending the phase shift matrix indication information to the second network device.

Abstract: A method for increasing the temperature-resiliency of a neural network, the method comprising loading a neural network model into a resistive nonvolatile in-memory-computing chip, training the deep neural network model using a progressive knowledge distillation algorithm as a function of a teacher model, the algorithm comprising injecting, using a clean model as the teacher model, low-temperature noise values into a student model and changing, now using the student model as the teacher model, the low-temperature noises to high-temperature noises, and training the deep neural network model using a batch normalization adaptation algorithm, wherein the batch normalization adaptation algorithm includes training a plurality of batch normalization parameters with respect to a plurality of thermal variations.

Abstract: A power device and a manufacturing method thereof are provided. The power device comprises a substrate, an epitaxial layer disposed on the substrate, and an isolation layer disposed on the epitaxial layer. The power device is divided into a gate contact region, an active region, a termination region, and a termination peripheral region along a horizontal direction. A gate metal is disposed on a portion of the isolation layer within the gate contact region. A source metal is disposed on the isolation layer within the active region. Voltage-withstanding rings and at least one field ring are disposed in the termination region. A drain metal is disposed on a portion of the isolation layer within the termination peripheral region. The drain metal is connected to a portion of a first implantation region within the termination peripheral region. The drain metal is disposed on a front side of the power device.

Abstract: A manufacturing method for a power MOSFET device having a source region embedded via epitaxial growth, includes: growing an epitaxial layer on a silicon substrate; forming a trench gate structure on the epitaxial layer, forming a silicon platform on two sides of the trench gate structure; forming a body region on an upper part of the epitaxial layer by injecting impurities; activating the impurities in the body region through a thermal process; oxidizing surfaces of the trench gate structure and the silicon platform to form a surface oxide layer; removing the surface oxide layer formed on the silicon platform; and growing a source region on the silicon platform via epitaxial growth; preparing a source contact penetrating the source region and extending into the body region, forming an ohmic contact area at a bottom of the source contact; and performing subsequent preparing processes.

Abstract: A manufacturing method for a power MOSFET device having a source region embedded via heteroepitaxial growth, includes: growing an epitaxial layer on a silicon substrate; forming a trench gate structure on the epitaxial layer; forming a body region on an upper part of the epitaxial layer by injection; thermally activating the impurities in the body region, where silicon disposed at an upper part of the epitaxial layer and the trench gate structure is oxidized to form a surface oxide layer; removing a portion of the surface oxide layer formed in a predetermined region; performing anisotropic etching to etch the predetermined region to form a source groove; growing heteroepitaxy to fill the source groove to form a source region; preparing a source contact penetrating the source region and extending into the body region, forming an ohmic contact area at a bottom of the source contact; and performing subsequent preparing processes.

Abstract: A method for manufacturing a metal-oxide-semiconductor field-effect transistor (MOSFET) device and a MOSFET device thereof are provided. The method includes forming gate interconnection structures, trench gates, and voltage-withstand rings on a substrate with high resistivity; performing first ion implantation and first high-temperature activation to form a body region, performing second ion implantation and second high-temperature activation to form a source region; depositing an isolation layer, and forming gate interconnection metal contacts, source region metal contacts, and a cut-off ring metal contact on the isolation layer, forming a gate metal, a source metal, and a cut-off ring metal; thinning the substrate from a back surface thereof; and forming a drain metal on the back surface of the substrate.

Abstract: A digital microfluidic apparatus and a driving method therefor. The digital microfluidic apparatus comprises a digital microfluidic chip (10), a thermal control apparatus (20), and an elastic support apparatus (30). The digital microfluidic chip (10) is provided with a droplet channel (91), and the droplet channel (91) is configured to allow droplets (90) to move therein; the thermal control apparatus (20) is disposed on one side of the digital microfluidic chip (10), and is configured to generate at least two independent and non-interference hot zones in the droplet channel (91), and control the temperature of each hot zone; and the elastic support apparatus (30) is disposed on the side of the thermal control apparatus (20) away from the digital microfluidic chip (10), and is configured to drive the thermal control apparatus (20) to be pasted on the surface of the digital microfluidic chip (10).

Abstract: A precoding matrix indication method, performed by a terminal. The precoding matrix indication method includes: receiving configuration information of a distance from the terminal to a network device, which is sent by the network device; determining indication information of a precoding matrix at least based on the configuration information of the distance; and sending the indication information of the precoding matrix to the network device.

Abstract: The disclosure provides an optical lens assembly and an electronic device. The optical lens assembly comprises: a first lens having a negative refractive power; a second lens having a negative refractive power; a third lens having a positive refractive power; a fourth lens having a positive refractive power; a fifth lens having a refractive power; a sixth lens having a refractive power; and a seventh lens having a refractive power; a distance d11 from a second side surface of the sixth lens to a first side surface of the seventh lens on the optical axis and a total optical length TTL of the optical lens assembly meet: d11/TTL?0.03. The disclosure solves at least one problem among high resolution, miniaturization, inability of clear imaging during large temperature differences, or poor imaging quality in low light environments in optical lens assembly in the related art.

Abstract: A digital microfluidic chip and methods for droplet generation and library preparation using the same, the digital microfluidic chip includes: a droplet generation structure, configured to generate droplets of various volumes, and the droplet generation structure includes: one or more droplet generation modules, wherein each droplet generation module is configured to generate at least one of a first droplet, a second droplet, and a third droplet, and the first droplet, the second droplet, and the third droplet respectively have a first volume, a second volume, and a third volume that are different from each other; a droplet receiving module, configured to achieve at least one of mixing and reaction of a plurality of droplets; and an interconnection module, configured to drive the first droplet, the second droplet, and the third droplet, and to connect the droplet generation structure to the droplet receiving module.

Abstract: Provided is a biosynthesis-based preparation method for a structural material of the human body. A polypeptide of the present application contains the structure of a C-terminal region of (repeating unit)n or (repeating unit)n-; the repeating unit contains an amino acid sequence as shown in SEQ ID NO. 1. Recombinant type V humanized collagen prepared in the present application has high activity in promoting cell adhesion, and does not cause an immune response when applied to the human body; moreover, the preparation method is novel, allows for large-scale production of the recombinant type V humanized collagen, and is widely used in the preparation of structural materials of the human body. The application field includes preparation of high-end medical devices.

Abstract: A load cell with a Roberval structure having an anti-offset function, and a weighing device are disclosed. The load cell includes strain detection elements mounted on an elastic element, which includes a loading portion for receiving a load from a connector, a fixing portion for fixing the elastic element, a strain generation portion for converting the load into deformation, and a parallel guide beam for transferring the load and keeping the loading portion translational when loaded. The strain generation portion includes first and second hollow cavity bodies symmetrically distributed vertically relative to each other. The loading portion and the fixing portion are respectively located on left and right sides of the strain generation portion. The parallel guide beam is located at upper and lower portions of the strain generation portion. A center of rotation and a geometric center of the strain generation portion coincide when the load cell with the Roberval structure is loaded.

Abstract: A method for efficient and rapid propagation of Emmenopterys henryi includes obtaining sterile seedlings, inducing adventitious buds, proliferating adventitious buds, promoting elongation of adventitious buds, promoting rooting of adventitious buds, and hardening and transplanting tissue culture plantlets. Different plant hormone components are selected to prepare a culture system including an initiation medium, a differentiation medium, a proliferation medium, an elongation medium, and a rooting medium. The differentiation rate of adventitious buds of Emmenopterys henryi is as high as 81.7%, the proliferation coefficient of adventitious buds is 4.7, the proportion of adventitious buds with a height greater than 5 mm after proliferation culture reaches 72.5%, and the rooting rate is 77.8%. When the tissue culture plantlets are transplanted into a mixed substrate, the survival rate reaches 100%.