Abstract: An outdoor moving device includes a main body, a first energy storage device, a second energy storage device, and a connection assembly. The first energy storage device is capable of supplying power to the outdoor moving device and includes at least one first energy storage unit. The second energy storage device is capable of supplying power to the outdoor moving device and includes at least one second energy storage unit. The connection assembly is used for mounting the second energy storage device to the main body. The first energy storage device is detachably mounted to the main body, the first energy storage device is detachable from the main body to supply power to another power tool, the first energy storage unit includes a first positive electrode made of a first material, and the second energy storage unit includes a second positive electrode made of a second material.

Abstract: A memory device includes a first transistor, a second transistor and a third transistor. The first transistor is coupled to a first word line at a first node. The second transistor is coupled to a second word line different from the first word line at a second node. A control terminal of the first transistor is coupled to a control terminal of the second transistor. The third transistor is coupled between a ground and a third node which is coupled to each of the first node and the second node. In a layout view, each of the first transistor and the second transistor has a first length along a direction. The first transistor, the third transistor and second transistor are arranged in order along the direction. A method is also disclosed herein.

Abstract: An integrated circuit (IC) assembly method is provided. The method includes fabricating a first wafer including a first device with a back end of line (BEOL) and first terminals of first and second types at the BEOL and fabricating a second wafer including a second device for back side power delivery network (BSPDN) processing, second terminals of the first type, first vias and second vias. The first and second wafers are bonded at the BEOL to connect the second terminals of the first type to a subset of the first terminals of the first type, the first vias to remaining first terminals of the first type, and the second vias to the first terminals of the second type. A BSPDN is built onto a backside of the second wafer to include first and second BSPDN terminals connected to the first and second vias, respectively.

Abstract: Copper-tin-nickel brazing material prepared by alloys recycled from E-waste, preparation method therefor, and system thereof are provided. A preparation method for the copper-tin-nickel brazing material includes the following steps: (a) spreading nano-SiO2 on the bottom of crucible and then adding a crude copper-tin-iron-nickel alloy recycled from E-waste; (b) heating the crucible to melt the crude alloy into a metal liquid so that Zn and Pb in the metal liquid react with the SiO2 to form a slag that floats out; (c) introducing a refining gas to the bottom of metal liquid in step (b), thereby removing the scums or gases formed by Pb, Fe, S, and O in the metal liquid; (d) performing heat-preserving directional solidification on the metal liquid, to bias-aggregate the Fe and Sb at one end and remove the same to obtain a copper-based intermediate alloy; and smelting and powdering the copper-based intermediate alloy.

Abstract: Methods and apparatus are described herein for dynamic allocation of multiple channels and data streams for multi-channel transmission and multiple-input and multiple-output (MIMO). For example, a station (STA) may receive an enhanced poll (EPoll) frame that includes a time offset, a channel offset and antenna/sector settings from an access point (AP). The STA may transmit, based on the received EPoll frame, an enhanced service period request (ESPR) frame that includes a MIMO control field and a multi-channel control field. The MIMO control field may indicate whether the STA supports MIMO transmission. The multi-channel control field may indicate whether the STA supports multi-channel transmission. Upon transmitting the ESPR frame, the STA may receive an enhanced grant frame from the AP. The enhanced grant frame may include an antenna configuration and a multi-channel allocation to enable the STA to perform the MIMO transmission and the multi-channel transmission.

Abstract: A method for aging and storage of Jiang-flavor raw liquor involves “growing, nourishing and storing.” The Jiang-flavor new liquors of different rounds are subjected to outdoor storage in jars for not more than 1 year, then the Jiang-flavor raw liquors of different rounds having experienced the outdoor storage in jars for not more than 1 year are blended and put into stainless steel tank for blending and aging for a period of 1 to 2 years, and finally the Jiang-flavor raw liquor having experiencing the blending and ageing in the stainless steel tank for 1 to 2 years undergoes indoor storage in jars for 2 to 10 years. The method combines different storage containers with different storage years, improving the aging and storage effect and the quality of the Jiang-flavor raw liquor in a targeted manner.

Abstract: Systems, methods, and devices for beamforming (BF) training are disclosed. In some examples, a receiver is configured to receive sector sweep (SSW) training frames from an initiator device that each indicate an antenna sector of the initiator device. A transmitter is configured to transmit sector sweep (SSW) training frames to the initiator device that indicate a best received antenna sector of the initiator device. The receiver receives a sector sweep feedback (SSW FB) frame from the initiator device, and the transmitter transmits transmit a sector sweep acknowledgement (SSW ACK) frame to the initiator device that indicates an antenna sector of the initiator device that is different from the antenna sector indicated by the SSW FB frame, if the SSW FB frame was best received by an antenna not corresponding to the best received antenna sector of the initiator device.

Abstract: The present disclosure relates to the field of communication technology, and provides a measurement gap configuration method, a node and a UE. The measurement gap configuration method for a first node includes configuring a measurement gap for a UE. The measurement gap includes at least one of a per-UE measurement gap for the UE, a per-CG measurement gap for each cell group corresponding to the UE, or a per-CC measurement gap for a component carrier corresponding to the UE.

Abstract: A connection structure of a semiconductor device is provided in the present invention. The connection structure includes an interlayer dielectric, a top metal structure, and a passivation layer. The interlayer dielectric is disposed on a substrate. The top metal structure is disposed on the interlayer dielectric. The top metal structure includes a bottom portion and a top portion disposed on the bottom portion. The bottom portion includes a first sidewall, and the top portion includes a second sidewall. A slope of the first sidewall is larger than a slope of the second sidewall. The passivation layer is conformally disposed on the second sidewall, the first sidewall, and a top surface of the interlayer dielectric.

Abstract: Disclosed are an interactive information processing method, an electronic device and a storage medium. The method includes establishing a position correspondence between a display text generated based on a multimedia data stream and the multimedia data stream; and presenting the display text and the multimedia data stream corresponding to the display text based on the position correspondence.

Abstract: Disclosed are a stress-resistant, creep-resistant, high-temperature resistant and high-insulation sheath material for a maglev train cable, and a manufacturing method and use thereof. A multiple chemical crosslinking structure is constructed by blending a functional polyvinylsilicone grease with ultra-high molecular weight polyethylene (UHMWPE) and a ceramicized silicone rubber as a cable material matrix and using electron beam irradiation. In addition, organic/inorganic fillers in the matrix can form physical crosslinking points in the material. A physical-chemical dual crosslinking structure is constructed in the matrix, which can limit the motion and relaxation of molecular chains and improve the interaction between the insulation layer and sheath layer and refractory layers such as fillers and mica tapes to avoid the relative displacement during the laying and operation and improve the high-temperature resistance, creep resistance and stress relaxation resistance of a UHMWPE cable sheath material.

Abstract: Monoorgano tin trialkoxide compounds having chemical formula R?Sn(OR)3 and containing less than about 5 mol % diorgano tin dialkoxide are described. R? is a linear or branched, optionally fluorinated, unsaturated hydrocarbon group having about 2 to about 20 carbon atoms and each R is independently a linear or branched, optionally fluorinated, alkyl group having about 1 to about 10 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.

Abstract: Monoorgano tin trialkoxide compounds having chemical formula R?Sn(OR)3 and containing less than about 5 mol % diorgano tin dialkoxide are described. R? is a linear or branched, optionally fluorinated, unsaturated hydrocarbon group having about 2 to about 20 carbon atoms and each R is independently a linear or branched, optionally fluorinated, alkyl group having about 1 to about 10 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.

Abstract: A chip structure is provided. The chip structure includes a substrate. The chip structure includes a conductive line over the substrate. The chip structure includes a first passivation layer over the substrate and the conductive line. The chip structure includes a conductive pad over the first passivation layer covering the conductive line. The conductive pad is thicker and wider than the conductive line. The chip structure includes a first conductive via structure and a second conductive via structure passing through the first passivation layer and directly connected between the conductive pad and the conductive line. The chip structure includes a conductive pillar over the conductive pad.

Abstract: A radio access network (“RAN”) node or basestation that includes dual functions with both wireless communications and wireless sensing. The sensing related signal may be integrated in the RAN node to provide sensing operations (e.g. sensing radio link S-RL) in addition to wireless communications (e.g. communication radio link RL) with user equipment (“UE”). The sensing signal can be used for detecting objects along a radio path between the RAN node and UE to improve the wireless communication through the communication radio link.

Abstract: The present disclosure describes methods, system, and devices for configuring a user equipment (UE) with quality information for minimization of drive test (MDT). One method includes sending, by the RAN node, a configuration message to the UE, the configuration message comprising the quality information, so that the UE performs an MDT task and reports at least one MDT measurement result according to the quality information; and receiving, by the RAN node, the at least one MDT measurement result from the UE. Another method includes receiving, by the UE, a configuration message from a RAN node, the configuration message comprising the quality information; and performing, by the UE, an MDT task and reporting at least one MDT measurement result according to the quality information.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a chip structure including a substrate and a wiring structure over a first surface of the substrate. The method includes removing a first portion of the wiring structure adjacent to the hole to widen a second portion of the hole in the wiring structure. The second portion has a first width increasing in a first direction away from the substrate. The method includes forming a first seed layer over the wiring structure and in the hole. The method includes thinning the substrate from a second surface of the substrate until the first seed layer in the hole is exposed. The method includes forming a second seed layer over the second surface of the substrate and the first seed layer in the hole.

Abstract: A neural network accelerator architecture for multiple task adaptation comprises a volatile memory comprising a plurality of subarrays, each subarray comprising M rows and N columns of volatile memory cells; a source line driver connected to a plurality of N source lines, each source line corresponding to a column in the subarray; a binary mask buffer memory having size at least N bits, each bit corresponding to a column in the subarray, where a 0 corresponds to turning off the column for a convolution operation and a 1 corresponds to turning on the column for the convolution operation; and a controller configured to selectively drive each of the N source lines with a corresponding value from the mask buffer; wherein each column in the subarray is configured to store a convolution kernel.