Abstract: A field effect transistor includes a substrate having a transistor forming region thereon; an insulating layer on the substrate; a first graphene layer on the insulating layer within the transistor forming region; an etch stop layer on the first graphene layer within the transistor forming region; a first inter-layer dielectric layer on the etch stop layer; a gate trench recessed into the first inter-layer dielectric layer and the etch stop layer within the transistor forming region; a second graphene layer on interior surface of the gate trench; a gate dielectric layer on the second graphene layer and on the first inter-layer dielectric layer; and a gate electrode on the gate dielectric layer within the gate trench.

Abstract: Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a source/drain region disposed over a substrate, a gate electrode layer disposed over the substrate, a first gate spacer disposed between the gate electrode layer and the source/drain region, and a dielectric spacer disposed between the gate electrode layer and the source/drain region. A first portion of the dielectric spacer is in contact with a first portion of the first gate spacer. The structure further includes a sacrificial layer disposed between a second portion of the first gate spacer and a second portion of the dielectric spacer.

Abstract: Exemplary semiconductor processing methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-carbon-and-nitrogen-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a layer of silicon-carbon-and-nitrogen-containing material on the substrate. The layer of silicon-carbon-and-nitrogen-containing material may be characterized by a dielectric constant of less than or about 4.0. The layer of silicon-carbon-and-nitrogen-containing material may be characterized by a leakage current at 2 MV/cm of less than or about 3E-08 A/cm2.

Abstract: Provided are a motor, a scroll compressor, and a processing method of a motor. The motor includes: a stator provided with a plurality of stator slots, a toothed portion being formed between any two adjacent stator slots among the plurality of stator slots, and an aluminum coil being wound in the stator slots and/or around the toothed portions to form a winding, wherein the winding includes a first connecting portion; and a lead wire, which is a copper wire and has an end portion, the end portion being connected to the first connecting portion via a first crimp terminal so as to connect the winding to an external power supply, wherein the first crimp terminal wraps and presses the end portion and the first connecting portion in an axial direction of the lead wire, and a space defined by the first crimp terminal is filled with a tin material.

Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed on the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.

Abstract: A semiconductor package includes a redistribution structure, a first conductive pillar and a second conductive pillar, and a semiconductor device. The redistribution structure has a first surface and a second surface opposite to the first surface. The first conductive pillar and the second conductive pillar are disposed on the first surface of the redistribution structure and electrically connected with the redistribution structure, wherein a maximum lateral dimension of the first conductive pillar is greater than a maximum lateral dimension of the second conductive pillar, and a topography variation of a top surface of the first conductive pillar is greater than a topography variation of a top surface of the second conductive pillar.

Abstract: A drive member for a scroll compressor and the scroll compressor including the drive member. The scroll compressor includes a first scroll plate and a second scroll plate. The drive member includes a hub portion, which has an inner hole, wherein the hub portion includes a first end and a second end opposite to each other, and a flange portion, which extends radially outwards from the first end of the hub portion of the driving member. By means of the flange portion, the drive member is connected to the first scroll plate of the scroll compressor, such that the first scroll plate is driven to rotate. The scroll compressor has a compact structure, a small size and light weight.

Abstract: Provided is a display substrate, a drive method thereof and a display apparatus, the display substrate includes: a first drive mode and a second drive mode, the first drive mode has a refresh rate less than that of the second drive mode, wherein the contents displayed on the display substrate include a plurality of display frames, in the first drive mode, the display frames include: a refresh frame and at least one maintain frame; the display substrate includes pixel circuits arranged in an array, the pixel circuits include a data signal line and a first initial signal line; the data signal line provides a first data signal in the maintain frame, the voltage value of the first data signal is constant, and/or the first initial signal line provides a first initial signal in the refresh frame and the maintain frame, the first initial signal is an AC signal.

Abstract: To reduce image artifacts and non-uniformity associated with a display pixel of an electronic display, processing circuity may adjust a luminance value corresponding to a display pixel according to a per-pixel gain mask, a per-pixel anode mask, or both. To further correct for the non-uniformity, the processing circuitry may convert the luminance value to a digital code based on a curve associated with an anode on which the display pixel is located.

Abstract: A package structure is provided. The package structure includes a redistribution structure on a substrate, a semiconductor die on the redistribution structure and electrically connected to the substrate, a wall structure on the redistribution structure and electrically isolated from the substrate. The semiconductor die includes a first sidewall, a second sidewall connected to the first sidewall, and a third sidewall connected to the second sidewall. The wall structure includes a first partition, a second partition and a third partition respectively immediately adjacent to the first sidewall, the second sidewall, and the third sidewall of the semiconductor die. The first partition is located immediately adjacent to and spaced apart from the second partition by a first distance, the second partition is located immediately adjacent to and spaced apart from the third partition by a second distance, and the first distance is substantially equal to the second distance.

Abstract: A scroll compressor includes a first scroll, the first scroll including a first end plate and a first scroll wrap extending from the first end plate along a first direction; a second scroll, the second scroll including a second end plate and a second scroll wrap protruding from the second end plate along a second direction opposite to the first direction, the second scroll wrap and the first scroll wrap cooperating to form a compression cavity used for compressing a medium; a support located at a side of the second scroll away from the first scroll; a motor; and a driving member rotatably supported by the support and located at the side of the second scroll away from the first scroll. The motor drives the first scroll to rotate through the driving member, and the first scroll drives the second scroll to rotate. The scroll compressor is compact in structure, small in volume, and light in weight.

Abstract: A scroll compressor includes a compressor shell; a frame (4) installed in the compressor shell; a first scroll (5) located in the compressor shell; and a second scroll (6) located in the compressor shell and being co-rotatable with the first scroll (5), to define a compression chamber (56) between the first scroll (5) and the second scroll (6), the second scroll (6) having a hub (41) that extends downward from a lower surface thereof; a transformer flange (8) supported on the frame and supporting the first scroll (5) and the second scroll (6), the transformer flange (8) being connected to the first scroll (5); an actuating mechanism (7) installed in the compressor shell and connected to the transformer flange (8), for driving the transformer flange (8) to rotate, so that the first scroll (5) and the second scroll (6) are driven to co-rotate; a crankshaft (9) assembly located in the transformer flange (8) and including an oil screw (10), an upper end (101) of the oil screw (10) being fitted with a hub (61) of

Abstract: The present invention relates methods for treating thyroid cancer, renal cell carcinoma or hepatocellar carcinoma comprising orally administering to a patient in need of such therapy a therapeutic amount of cabozantinib lauryl sulfate salt, preferably in a capsule form. The method allows the administration of the therapeutic amount of cabozantinib lauryl sulfate salt in a fed state or a fasted state and the administration does not exhibit a food effect.

Abstract: Exemplary semiconductor processing methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-oxygen-and-carbon-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a layer of silicon-oxygen—and—carbon-containing material on the substrate. The layer of silicon-oxygen—and—carbon-containing material may be characterized by a dielectric constant of less than or about 4.5. The layer of silicon-oxygen—and—carbon-containing material may be characterized by a density of greater than or about 2.0 g/cm3.

Abstract: The present disclosure provides a customized module-wise bra with both aesthetic, comfort, and functions assisting a post-mastectomy subject to wear the bra and correct any postural distortion arising from imbalance due to loss of weight from the mastectomized breast. Also provided herein is a method for fabricating the customized module-wise bra according to the anatomical/physical characteristics of the subject based on various 3D printing, 3D body scanning and ultrasonography techniques.

Abstract: The invention provides compositions and methods for treating a patient with cancer with an immune cell, e.g., a T-cell, e.g., an engineered T-cell, with increased sialidase activity. The invention also provides compositions and methods for treating a patient with cancer with an immune cell, e.g., a T-cell, e.g., an engineered T-cell, in combination with a sialidase. The invention also provides compositions and methods for treating a patient with cancer with an immune cell, e.g., a T-cell, e.g., an engineered T-cell, pretreated with a sialidase.

Abstract: The present invention relates methods for treating thyroid cancer, renal cell carcinoma or hepatocellar carcinoma comprising orally administering to a patient in need of such therapy a therapeutic amount of cabozantinib lauryl sulfate salt, preferably in a capsule form. The method allows the administration of the therapeutic amount of cabozantinib lauryl sulfate salt in a fed state or a fasted state and the administration does not exhibit a food effect.

Abstract: An inspection system and method, the inspection system includes: a carrying device, at least one ray source and a detector assembly. The ray source and the detector assembly are lifted or lowered along a central axis of the carrying device relative to the carrying device. When viewed along the central axis, the ray source is translatable between scanning positions relative to the carrying device. When the ray source is at one of the scanning positions the ray source and the detector assembly are lifted or lowered relative to the carrying device along the central axis, and the ray source emits X-rays; and when the ray source and the detector assembly are lifted or lowered a predetermined distance the ray source translates to another scanning position. The inspection system further reconstructs a three-dimensional scanning image of the object to be inspected based on detection data of the detector assembly.

Abstract: The conductive pillar in a semiconductor package has a gear-shaped top surface. The gear-shaped top surface has a plurality of protrusions distributed on the periphery of the gear-shaped top surface. Contour lines of each of the plurality of protrusions includes a smooth curve that bulges towards the space outside the conductive pillar. The conductive pillar can be defined by the space traversed by the gear-shaped top surface as it moves a certain distance in a direction perpendicular to the gear-shaped top surface. The conductive pillar can effectively enhance the adhesion between lateral surfaces of the conductive pillar and insulating materials.