Abstract: A method for forming a semiconductor device. The method includes performing a first etching process to define one or more fins and corresponding device isolation structures on a substrate. The method further includes forming an enhancement layer on each of the fins, such that the enhancement layer encapsulates each fin. The method further performs a second etching process to remove one or more of the fins, and performs a third etching process to remove a portion of the enhancement layer. The method also includes depositing an STI material on the fins and the device isolation structures, followed by recessing the fins relative to the STI material.

Abstract: A method of manufacturing micro devices includes: preparing a III-nitride epitaxial structure including a p-type III-nitride layer, an n-type III-nitride layer on the p-type III-nitride layer, a AlxIII_others1-xN layer on the n-type III-nitride layer, and an undoped III-nitride layer on the AlxIII_others1-xN layer; forming a photoresist layer on the III-nitride epitaxial structure to contact the undoped III-nitride layer; patterning the photoresist layer; performing a first plasma etching process to the III-nitride epitaxial structure through the patterned photoresist layer to form a trench in the etched III-nitride epitaxial structure, in which the trench extends from the etched photoresist layer at least to the AlxIII_others1-xN layer; and performing a second plasma etching process to the etched III-nitride epitaxial structure until the etched III-nitride epitaxial structure is cut into a plurality of micro devices and a top surface of the etched AlxIII_others1-xN layer is exposed.

Abstract: A micro light-emitting diode device includes a substrate, a micro light-emitting diode, and a transparent top electrode. The micro light-emitting diode is disposed on the substrate and includes a p-type GaN layer, an n-type III-nitride layer above the p-type GaN layer, an n-doped AlxGayIn(1-x-y)N layer above and in contact with the n-type III-nitride layer, and an active layer between the p-type GaN layer and the n-type III-nitride layer. x is equal to or greater than about 0.02. The transparent top electrode covers and is in contact with the n-doped AlxGayIn(1-x-y)N layer. A refractive index of the n-doped AlxGayIn(1-x-y)N layer is smaller than a refractive index of the n-type III-nitride layer. A sum of the thicknesses of the n-type III-nitride layer and the n-doped AlxGayIn(1-x-y)N layer is greater than a sum of the thicknesses of the active layer and the p-type GaN layer.

Abstract: A micro light-emitting diode device includes a substrate, a micro light-emitting diode, an isolation layer, and a cathode transparent electrode. The micro light-emitting diode is disposed on the substrate and includes a p-type III-nitride layer, n-type Ill-nitride layers with a layer number of m sequentially stacked above the p-type III-nitride layer, and an active layer between the p-type Ill-nitride layer and the n-type III-nitride layers. m is an integer greater than two. A top layer and a next layer in contact with each other of the n-type III-nitride layers contain aluminum. The isolation layer is on the substrate and surrounds the micro light-emitting diode. The cathode transparent electrode is at least partially in contact with a top surface of the top layer. A refractive index of the top layer is smaller than a refractive index of the next layer.

Abstract: A micro light-emitting diode device includes a substrate, a micro light-emitting diode, and a transparent top electrode. The micro light-emitting diode is disposed on the substrate and includes a p-type GaN layer, an n-type GaN layer above the p-type GaN layer, an n-doped InxAl(1-x)N layer above and in contact with the n-type GaN layer, and an active layer between the p-type GaN layer and the n-type GaN layer. x is a positive number smaller than 0.5. The transparent top electrode covers and is in contact with the n-doped InxAl(1-x)N layer. A refractive index of the n-doped InxAl(1-x)N layer is smaller than a refractive index of the n-type GaN layer. A sum of the thicknesses of the n-type GaN layer and the n-doped InxAl(1-x)N layer is greater than a sum of the thicknesses of the active layer and the p-type GaN layer.

Abstract: A micro light-emitting diode device includes a substrate, a micro light-emitting diode, and a transparent top electrode. The micro light-emitting diode is disposed on the substrate and includes a p-type GaN layer, an n-type GaN layer above the p-type GaN layer, an n-doped AlxGa(1?x)N layer above and in contact with the n-type GaN layer, and an active layer between the p-type GaN layer and the n-type GaN layer. x is equal to or greater than 0.02 and smaller than 1. The transparent top electrode covers and is in contact with the n-doped AlxGa(1?x)N layer. A refractive index of the n-doped AlxGa(1?x)N layer is smaller than a refractive index of the n-type GaN layer. A sum of the thicknesses of the n-type GaN layer and the n-doped AlxGa(1?x)N layer is greater than a sum of the thicknesses of the active layer and the p-type GaN layer.

Abstract: A micro light-emitting diode device includes a substrate, a micro light-emitting diode, and a cathode transparent electrode. The micro light-emitting diode is disposed on the substrate and includes a p-type III-nitride layer, a first n-type III-nitride layer above the p-type III-nitride layer, a second n-type III-nitride layer above the first n-type III-nitride layer, and an active layer between the p-type and first n-type III-nitride layers. The second n-type III-nitride layer contains aluminum and has top and bottom surfaces. A refractive index of the second n-type III-nitride layer is smaller than a refractive index of the first n-type III-nitride layer and varies in a monotonically non-decreasing manner from the top surface. The refractive index of the second n-type III-nitride layer is larger at the bottom surface than at the top surface. The cathode transparent electrode is in contact with the top surface.

Abstract: A micro light-emitting diode device includes a substrate, a micro light-emitting diode, and a transparent top electrode. The micro light-emitting diode is disposed on the substrate and includes a p-type GaN layer, an n-type III-nitride layer above the p-type GaN layer, an n-doped AIN layer above and in contact with the n-type III-nitride layer, and an active layer between the p-type GaN layer and the n-type III-nitride layer. The transparent top electrode covers and is in contact with the n-doped AIN layer. A refractive index of the n-doped AIN layer is smaller than a refractive index of the n-type III-nitride layer. A sum of the thicknesses of the n-type III-nitride layer and the n-doped AIN layer is greater than a sum of the thicknesses of the active layer and the p-type GaN layer.

Abstract: The present invention relates to a two-component coating composition comprising one first saturated polyhydroxy component, optionally one second saturated polyhydroxy component, wherein the second polyhydroxy compound is different from the first polyhydroxy compound, at least one metal component, water and at least one polyisocyanate. The resulting composition offers excellent scratch resistance, better mechanical properties and good applicability.

Abstract: A micro light emitting diode display includes a substrate, an electrode layer disposed on the substrate, a micro light emitting diode device disposed on the electrode layer, a metal layer disposed on the substrate and connected to the electrode layer, and first and second encapsulation layers. The substrate has an air passage extending to opposite surfaces thereof. The first encapsulation layer wraps the micro light emitting diode device. The second encapsulation layer covers the metal layer and has a material different from that of the first encapsulation layer. The metal layer has a visible area in a display region of the substrate that is not covered by the micro light emitting diode device. A part of the visible area is covered by the second encapsulation layer, and a proportion of the part to the visible area is equal to or greater than 60%.

Abstract: A device with a light-emitting diode includes a substrate, a first conductive pad and a second conductive pad, a light-emitting diode, a metal protrusion, a polymer layer, and a top electrode. The substrate has a top surface. The first conductive pad and the second conductive pad are on the substrate. The light-emitting diode is on the first conductive pad. The metal protrusion is on the second conductive pad. The polymer layer covers the top surface of the substrate, the first conductive pad, the second conductive pad, the metal protrusion, and the light-emitting diode, in which a distance from a top of the metal protrusion to the top surface of the substrate is greater than a thickness of the polymer layer. The top electrode covers the light-emitting diode, the polymer layer, and the metal protrusion such that the light-emitting diode is electrically connected with the second conductive pad.

Abstract: A method of manufacturing micro devices includes: preparing a GaN-based epitaxial structure including a p-type GaN layer, a n-type GaN layer on the p-type GaN layer, and an undoped GaN layer on the n-type GaN layer; forming a photoresist layer on the GaN-based epitaxial structure with the undoped GaN layer contacting the photoresist layer; patterning the photoresist layer; performing a plasma etching process to the GaN-based epitaxial structure through the patterned photoresist layer until the patterned photoresist layer is completely removed, such that a plurality of mesas are formed on the etched GaN-based epitaxial structure, in which a height of the mesas is at least 1.0 ?m; and continuing to perform the plasma etching process until the undoped GaN layer is completely removed and the etched GaN-based epitaxial structure is cut into a plurality of micro devices.

Abstract: A method for forming a conductive feature includes following operations. A first insulating layer is formed over a substrate. The first insulating layer is patterned to form a first recess in the first insulating layer. The first recess is filled with a conductive material. A plurality of second recesses are formed in the conductive material. Each of the second recesses overlaps the first recess. A portion of the conductive material is removed to form a first conductive feature. A ratio of a sum of opening areas of the second recesses to an opening area of the first recess is less than 1%.

Abstract: A method for replacing an element of a display device includes: forming a structure with a first liquid layer between a first micro device and a conductive pad of a substrate in which the first micro device is gripped by a sticking force produced by the first liquid layer; evaporating the first liquid layer such that the first micro device is bound to the substrate; determining if the first micro device is malfunctioned or misplaced; removing the first micro device when the first micro device is malfunctioned or misplaced; forming another structure with a second liquid layer between a second micro device and the conductive pad of the substrate in which the second micro device is gripped by a sticking force produced by the second liquid layer; and evaporating the second liquid layer such that the second micro device is bound to the substrate.

Abstract: A micro light emitting diode display includes a substrate, an electrode layer and a micro light emitting diode device. The substrate has a first surface, a second surface opposite to the first surface, and at least one air passage extending from the first surface to the second surface. The electrode layer is disposed on and in contact with the first surface of the substrate. The air passage has an opening on the first surface of the substrate, and the electrode layer is spaced apart from the opening. The micro light emitting diode device is disposed on the electrode layer and has a light emitting area that is less than or equal to 2500 ?m2.

Abstract: A micro light-emitting diode device structure including a substrate, a micro light-emitting diode, an isolation layer, and a top electrode is provided. A height of a contact periphery between the micro light-emitting diode and a concave surface of the isolation layer is greater than a height of a flat surface of the isolation layer and is smaller than a height of the micro light-emitting diode. A height of the isolation layer decreases from the height of the contact periphery to the height of the flat surface in a direction away from the micro light-emitting diode. In a cross-section, an included angle between the flat surface and a virtual straight line connecting the contact periphery and a turning periphery is greater than 120 degrees. The turning periphery is a boundary between the concave surface and the flat surface.

Abstract: A method of handling a micro device is provided. The method includes: holding the micro device by a transfer head; forming a liquid layer between the micro device and a substrate; maintaining a first temperature of the transfer head to be lower than an environmental temperature; maintaining a second temperature of the substrate to be lower than the environmental temperature; and binding the micro device to the substrate by the liquid layer.

Abstract: A method for replacing an element of a display device includes: forming a structure with a first liquid layer between a first micro device and a conductive pad of a substrate in which the first micro device is gripped by a sticking force produced by the first liquid layer; evaporating the first liquid layer such that the first micro device is bound to the substrate; determining if the first micro device is malfunctioned or misplaced; removing the first micro device when the first micro device is malfunctioned or misplaced; forming another structure with a second liquid layer between a second micro device and the conductive pad of the substrate in which the second micro device is gripped by a sticking force produced by the second liquid layer; and evaporating the second liquid layer such that the second micro device is bound to the substrate.

Abstract: A micro light-emitting diode transparent display including a transparent substrate is provided. N pixels are defined on the transparent substrate. N sets of micro light-emitting diodes are on the transparent substrate and respectively located in the N pixels. A wall portion is on the transparent substrate and surrounding one of the N sets of the micro light-emitting diodes to form an enclosed region on the transparent substrate. A length of a periphery of the enclosed region is equal to or smaller than 85% of a length of an outer periphery of one of the N pixels in which said one of the N sets of the micro light-emitting diodes is located. An area of said one of the N pixels outside the enclosed region allows light to directly pass through the micro light-emitting diode transparent display.

Abstract: A micro light emitting diode display includes a substrate, an electrode layer disposed on the substrate, a micro light emitting diode device disposed on the electrode layer, a metal layer disposed on the substrate and connected to the electrode layer, and first and second encapsulation layers. The substrate has an air passage extending to opposite surfaces thereof. The first encapsulation layer wraps the micro light emitting diode device. The second encapsulation layer covers the metal layer and has a material different from that of the first encapsulation layer. The metal layer has a visible area in a display region of the substrate that is not covered by the micro light emitting diode device. A part of the visible area is covered by the second encapsulation layer, and a proportion of the part to the visible area is equal to or greater than 60%.