Abstract: A micro light-emitting diode display device including a driving transistor and a micro light-emitting diode is provided. The driving transistor includes a substrate, a bottom gate, a gate insulator, a semiconductor layer, an etch stopper, a drain electrode, a source electrode, and an insulating layer. The drain electrode is ring-shaped and a contact portion between the drain electrode and the semiconductor layer surrounds the semiconductor layer. The source electrode is in contact with the semiconductor layer and is enclosed by the drain electrode. The insulating layer has a via therein to expose a portion of the source electrode. The micro light-emitting diode is electrically connected to the source electrode. The micro light-emitting diode includes a current injection channel present in the micro-light emitting diode. The current injection channel is separated from a side surface of the micro light-emitting diode.

Abstract: A micro light-emitting diode display device including a driving transistor and a micro light-emitting diode is provided. The driving transistor includes a substrate, a bottom gate, a gate insulator, a semiconductor layer, an etch stopper, a drain electrode, a source electrode, and an insulating layer. The drain electrode is ring-shaped and a contact portion between the drain electrode and the semiconductor layer surrounds the semiconductor layer. The source electrode is in contact with the semiconductor layer and is enclosed by the drain electrode. The insulating layer has a via therein to expose a portion of the source electrode. The micro light-emitting diode is electrically connected to the source electrode. The micro light-emitting diode includes a current injection channel present in the micro-light emitting diode. The current injection channel is separated from a side surface of the micro light-emitting diode.

Abstract: An electrostatic chuck including a body, an electrode, at least one dielectric layer, and a composite dielectric layer is provided. The electrode is present on the body. The dielectric layer is present on and covers the electrode. The composite dielectric layer is present on the dielectric layer. The composite dielectric layer includes a polymer layer and a plurality of inorganic dielectric particles. The inorganic dielectric particles are distributed within the polymer layer, and a permittivity of the inorganic dielectric particles is greater than a permittivity of the polymer layer. A resistivity of the dielectric layer is greater than a resistivity of the composite dielectric layer.

Abstract: An electrostatic chuck including a body, an electrode, a diffusion blocking layer, and a composite dielectric layer is provided. The electrode is present on the body. The diffusion blocking layer is present on the electrode. The composite dielectric layer is present on the diffusion blocking layer. The composite dielectric layer includes a polymer layer and a plurality of inorganic dielectric particles. The plurality of inorganic dielectric particles is distributed within the polymer layer, and a permittivity of the inorganic dielectric particles is greater than a permittivity of the polymer layer.

Abstract: A method for transferring a micro device is provided. The method includes: preparing a carrier substrate with the micro device thereon, wherein an adhesive layer is present between and in contact with the carrier substrate and the micro device; picking up the micro-device from the carrier substrate by a transfer head; forming a liquid layer on a receiving substrate; and placing the micro device over the receiving substrate so that the micro device is in contact with the liquid layer and is gripped by a capillary force.

Abstract: A method for minimizing an average surface includes: forming an epitaxial layer on a growth substrate; forming the soft metal layer on the epitaxial layer in which the average surface roughness of a bonding surface of the soft metal layer is greater than a first value; forming a glue layer on a carrier substrate; placing a combination of the glue layer and the carrier substrate on the bonding surface in which the glue layer being in contact with the bonding surface of the soft metal layer; and applying an external pressure to compress the glue layer and the soft metal layer such that the average surface roughness of the bonding surface of the soft metal layer is reduced from the first value to a second value, wherein the second value is less than 80 nm.

Abstract: A method for minimizing an average surface includes: forming an epitaxial layer on a growth substrate; forming the soft metal layer on the epitaxial layer in which the average surface roughness of a bonding surface of the soft metal layer is greater than a first value; forming a glue layer on a carrier substrate; placing a combination of the glue layer and the carrier substrate on the bonding surface in which the glue layer being in contact with the bonding surface of the soft metal layer; and performing a laser lift-off process to separate the growth substrate from the epitaxial layer such that the average surface roughness of the bonding surface of the soft metal layer is reduced to be less than a second value. The second value is smaller than the first value, and the second value is less than 80 nm.

Abstract: A micro light-emitting diode driving circuit including a micro light-emitting diode, a driving circuit, and a digital-to-analog converter is provided. The driving circuit includes a driving transistor electrically coupled to the micro light-emitting diode in series. The digital-to-analog converter is electrically coupled to a gate terminal of the driving transistor and is configured to provide grayscale voltage levels of the micro light-emitting diode to the driving circuit and the micro light-emitting diode. The grayscale voltage levels are determined by a gamma curve. A driving voltage is applied to the driving transistor and the micro light-emitting diode, such that at least one-sixteenth of the whole grayscale voltage levels of the micro light-emitting diode is within a linear region of at least one of current-voltage curves of the driving transistor. An accessible working range of the micro light-emitting diode is about 2 volts.

Abstract: A method for binding a micro device on a substrate is provided. The method includes forming a conductive pad on the substrate; forming an elevated bonding layer on the conductive pad; lowering a temperature of the elevated bonding layer in an environment comprising a vapor such that at least a portion of the vapor is condensed to form a liquid layer on the elevated bonding layer; disposing the micro device over the elevated bonding layer such that the micro device is in contact with the liquid layer and is gripped by a capillary force produced by the liquid layer between the micro device and the elevated bonding layer, wherein the micro device comprises an electrode facing the elevated bonding layer; and evaporating the liquid layer such that the electrode is bound to the elevated bonding layer and is in electrical connection with the conductive pad.

Abstract: A method for transferring a plurality of micro devices e is provided. The method includes picking up the micro devices from a carrier substrate by a transfer head, and iteratively performing a placing process. The placing process includes moving the transfer head to a position, at which an array of the micro devices is positioned over an array of receiving locations of a receiving substrate, and placing said array of the micro devices onto the array of the receiving locations of the receiving substrate.

Abstract: A transfer head is provided. The transfer head includes a body having a plurality of arrays of grip regions with each of the arrays comprising at least two columns of the grip regions. The grip regions in one of the columns are electrically connected in series. The columns in one of the arrays are controlled by a single voltage source, and the columns in two of the arrays are controlled by two voltage sources respectively.

Abstract: A micro light-emitting diode driving circuit including a micro light-emitting diode, a first driving transistor, and a second driving transistor is provided. The first driving transistor receives a first driving voltage from a first driving voltage source, and is electrically connected to the micro light-emitting diode and a low voltage source. The second driving transistor receives a second driving voltage from a second driving voltage source, and is electrically connected to the micro light-emitting diode and a low voltage source. One terminal of the first driving transistor and one terminal of the second driving transistor are electrically and separately connected to one end of the micro light-emitting diode, and a lateral length of the micro light-emitting diode is less than or equal to 50 ?m.

Abstract: A method for avoiding crack formation during a laser lift-off process is provided. The method includes: forming a composite glue layer on a carrier substrate in which the composite glue layer includes an ultraviolet glue and fillers therein and a Young's modulus of the fillers is greater than a Young's modulus of the ultraviolet glue; placing a semiconductor structure onto the composite glue layer in which the semiconductor structure includes a growth substrate, an epitaxial layer present on the growth substrate, and a metal layer present on the epitaxial layer, wherein placing the semiconductor structure makes the metal layer be in contact with and attached to the composite glue layer; and performing the laser lift-off process to separate the growth substrate from the epitaxial layer.

Abstract: A display is provided. The display includes a substrate and a plurality of light emitting devices. The substrate has at least one pixel defined thereon. A plurality of sub-pixels are defined in said pixel. The light emitting devices are respectively located within said sub-pixels. A distance between a geometrical center of one of said sub-pixels and a common geometrical center of said light emitting devices is greater than a distance between a geometrical center of the light emitting device in said one of said sub-pixels and the common geometrical center of said light emitting devices. A relative position of the light emitting device with respect to its corresponding sub-pixel is different from at least one of relative positions of a remaining part of said light emitting devices with respect to their respectively corresponding sub-pixels.

Abstract: A method for manufacturing at least one light emitting diode (LED) includes epitaxying at least one light emitting diode (LED) structure on a growth substrate; forming at least one supporting layer on the LED structure; temporarily adhering the supporting layer to a carrier substrate through an adhesive layer, in which the supporting layer has a Young's modulus greater than that of the adhesive layer; and removing the growth substrate from the LED structure.

Abstract: A display is provided. The display includes a substrate and a at least three micro devices. The substrate has at least one pixel defined thereon. Said three devices are located within said pixel. Geometrical centers respectively of said three micro devices are arranged in a triangular shape. A ratio of a sum area of vertical projections of said three micro devices on the substrate to an area of a vertical projection of said pixel on the substrate is greater than or equal to 0.4.

Abstract: A method for manufacturing a light emitting device is provided. The method includes: preparing a growth substrate with at least one dislocation-controlling feature thereon; sequentially growing a second type semiconductor layer, an active layer, and a first type semiconductor layer on the dislocation-controlling feature, wherein the active layer has a first region and at least one second region, and the dislocation-controlling feature causes a threading dislocation density of the first region to be greater than a threading dislocation density of the second region; and modifying a resistivity of the first type semiconductor layer, so that the resistivity of the first type semiconductor layer increases from a plurality of low resistance portions toward a high resistance portion of the first type semiconductor layer.

Abstract: A transfer head is provided. The transfer head includes a body having a plurality of arrays of grip regions with each of the arrays comprising at least two columns of the grip regions. The grip regions in one of the columns are electrically connected in series. The columns in one of the arrays are controlled by a single voltage source, and the columns in two of the arrays are controlled by two voltage sources respectively.

Abstract: A method for transferring a plurality of micro devices e is provided. The method includes picking up the micro devices from a carrier substrate by a transfer head, and iteratively performing a placing process. The placing process includes moving the transfer head to a position, at which an array of the micro devices is positioned over an array of receiving locations of a receiving substrate, and placing said array of the micro devices onto the array of the receiving locations of the receiving substrate.

Abstract: A micro-bonding structure including a substrate, a conductive pad, a bonding layer, a micro device, and a diffusive bonding portion is provided. The conductive pad is on the substrate. The bonding layer is on the conductive pad. A thickness of the bonding layer ranges from about 0.2 ?m to about 2 ?m. The micro device is on the bonding layer. The diffusive bonding portion is between and electrically connected with the bonding layer and the conductive pad. The diffusive bonding portion consists of at least a part of elements from the bonding layer and at least a part of elements from the conductive pad. A plurality of voids are between the bonding layer and the conductive pad, and one of the voids is bounded by the diffusive bonding portion and at least one of the conductive pad and the bonding layer.