Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ?13.

Abstract: In a method for obtaining the equivalent oxide thickness of a dielectric layer, a first semiconductor capacitor including a first silicon dioxide layer and a second semiconductor capacitor including a second silicon dioxide layer are provided and a modulation voltage is applied to the semiconductor capacitors to measure a first scanning capacitance microscopic signal and a second scanning capacitance microscopic signal. According to the equivalent oxide thicknesses of the silicon dioxide layers and the scanning capacitance microscopic signals, an impedance ratio is calculated. The modulation voltage is applied to a third semiconductor capacitor including a dielectric layer to measure a third scanning capacitance microscopic signal. Finally, the equivalent oxide thickness of the dielectric layer is obtained according to the equivalent oxide thickness of the first silicon dioxide layer, the first scanning capacitance microscopic signal, third scanning capacitance microscopic signal, and the impedance ratio.

Abstract: A method of forming a semiconductor device includes forming a photoresist layer over a mask layer, patterning the photoresist layer, and forming an oxide layer on exposed surfaces of the patterned photoresist layer. The mask layer is patterned using the patterned photoresist layer as a mask.

Abstract: This patent presents a multidimensional space vector modulation (MDSVM) circuit formed by coupling a half-bridge logic control circuit not directly coupled to electronic components with at least three half-bridge logic control circuits coupled to electronic components. The half-bridge logic control circuit not directly coupled with any electronic components can form a full-bridge circuit with any other half-bridge logic control circuit coupled with electronic components. Therefore, users can further control the voltage difference between both ends of each electronic component separately and then individually control the strength and direction of current flowing through each electronic component and solving the problem of control attributed to the complexity of prior art.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

Abstract: The present disclosure provides a method for preparing a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors, the composition prepared by the method, and use of the composition for treating arthritis. The composition of the present disclosure achieves the effect of treating arthritis through various efficacy experiments.

Abstract: A system and a method for parameter optimization with adaptive search space and a user interface using the same are provided. The system includes a data acquisition unit, an adaptive adjustment unit and an optimization search unit. The data acquisition unit obtains a set of executed values of several operating parameters and a target parameter. The adaptive adjustment unit includes a parameter space transformer and a search range definer. The parameter space transformer performs a space transformation on a parameter space of the operating parameters according to the executed values. The search range definer defines a parameter search range in a transformed parameter space based on the sets of the executed values. The optimization search unit takes the parameter search range as a limiting condition and takes optimizing the target parameter as a target to search for a set of recommended values of the operating parameters.

Abstract: A vibration module is provided, having a main axis passing through the center of the vibration module. The vibration module includes a fixed part and a first vibration part. The first vibration part is disposed within the fixed part. The first vibration part includes a first moving member and a first driving assembly. The first driving assembly drives the first moving member to move along the main axis relative to the fixed part.

Abstract: The present disclosure provides a method for treating liver cirrhosis by using a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors. The composition of the present disclosure achieves the effect of treating liver cirrhosis through various efficacy experiments.

Abstract: An electronic device and a manufacturing method thereof are provided. The electronic device includes a circuit substrate, a plurality of electronic components, a plurality of carriers, and a bonding layer. The circuit substrate includes a circuit layer. The plurality of electronic components are disposed on the circuit substrate. The circuit layer is electrically connected to at least one of the plurality of electronic components. The plurality of carriers are disposed on the circuit substrate. The bonding layer bonds the plurality of carriers to the circuit substrate. At least one gap is between the plurality of carriers. A width of the gap is Wg. An average width of the plurality of carriers is Wa. A width of the circuit substrate is Wc. The electronic device satisfies: Wa*2*10?4<Wg<(Wc?Wa*2).

Abstract: A plunger pump base and a plunger pump device. The plunger pump base includes a support assembly and an extension assembly. The support assembly includes a top plate, a bottom plate and a support frame, the top plate and the bottom plate are oppositely arranged at an interval, and the support frame is respectively fixed with the top plate and the bottom plate. The extension assembly includes an extension block, a first telescopic mechanism and a second telescopic mechanism. One end of the first telescopic mechanism is rotatably connected to the extension block, the other end of the first telescopic mechanism is rotatably connected to the top plate. One end of the second telescopic mechanism is rotatably connected to the extension block, and the other end of the second telescopic mechanism is rotatably connected to the bottom plate.

Abstract: A method includes providing a substrate having a surface such that a first hard mask layer is formed over the surface and a second hard mask layer is formed over the first hard mask layer, forming a first pattern in the second hard mask layer, where the first pattern includes a first mandrel oriented lengthwise in a first direction and a second mandrel oriented lengthwise in a second direction different from the first direction, and where the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall, and depositing a material towards the first mandrel and the second mandrel such that a layer of the material is formed on the top surface and the first sidewall but not the second sidewall of the first mandrel.

Abstract: Embodiments disclosed herein relate to using an implantation process and a melting anneal process performed on a nanosecond scale to achieve a high surface concentration (surface pile up) dopant profile and a retrograde dopant profile simultaneously. In an embodiment, a method includes forming a source/drain structure in an active area on a substrate, the source/drain structure including a first region comprising germanium, implanting a first dopant into the first region of the source/drain structure to form an amorphous region in at least the first region of the source/drain structure, implanting a second dopant into the amorphous region containing the first dopant, and heating the source/drain structure to liquidize and convert at least the amorphous region into a crystalline region, the crystalline region containing the first dopant and the second dopant.

Abstract: A detection device for detecting an eyeball includes a frame element, a transceiver, and a contact lens element. The transceiver is disposed on the frame element. The transceiver transmits a first RF (Radio Frequency) signal. The contact lens element includes a resonator. The resonator converts the first RF signal into a first ultrasonic signal. The first ultrasonic signal is transmitted to the eyeball. The resonator converts a second ultrasonic signal from the eyeball into a second RF signal. The transceiver receives the second RF signal.

Abstract: A ghost key preventing circuit includes plural driving lines, plural sensing lines, plural key switches, plural bias resistors and a controller. The plural driving lines and the plural sensing lines are collaboratively formed as a matrix circuit. The plural key switches are included in the matrix circuit. The plural bias resistors are connected with the corresponding sensing lines. When the key switch of a specified switch circuit is turned on, a divided voltage is generated and outputted from the specified switch circuit. The controller judges whether the key switch of the specified switch circuit is normally turned on or the key switch is a ghost key according to the divided voltage.

Abstract: A method of forming a semiconductor device includes forming a mask layer over a substrate and forming an opening in the mask layer. A gap-filling material is deposited in the opening. A plasma treatment is performed on the gap-filling material. The height of the gap-filling material is reduced. The mask layer is removed. The substrate is patterned using the gap-filling material as a mask.

Abstract: A method for manufacturing an integrated circuit includes patterning a plurality of photomask layers over a substrate, partially backfilling the patterned plurality of photomask layers with a first material using atomic layer deposition, completely backfilling the patterned plurality of photomask layers with a second material using atomic layer deposition, removing the plurality of photomask layers to form a masking structure comprising at least one of the first and second materials, and transferring a pattern formed by the masking structure to the substrate and removing the masking structure. The first material includes a silicon dioxide, silicon carbide, or carbon material, and the second material includes a metal oxide or metal nitride material.

Abstract: A vinyl-containing copolymer is copolymerized from (a) first compound, (b) second compound, and (c) third compound. (a) First compound is an aromatic compound having a single vinyl group. (b) Second compound is polybutadiene or polybutadiene-styrene having side vinyl groups. (c) Third compound is an acrylate compound. The vinyl-containing copolymer includes 0.003 mol/g to 0.010 mol/g of benzene ring, 0.0005 mol/g to 0.008 mol/g of vinyl group, and 1.2*10?5 mol/g to 2.4*10?4 mol/g of ester group.