Abstract: A high-electron mobility transistor includes a substrate, a GaN channel layer over the substrate, an AlGaN layer over the GaN channel layer, a gate recess in the AlGaN layer, a source region and a drain region on opposite sides of the gate recess, a GaN source layer and a GaN drain layer grown on the AlGaN layer within the source region and the drain region, respectively, a p-GaN gate layer in and on the gate recess; and a re-grown AlGaN film on the AlGaN layer, on the GaN source layer and the GaN drain layer, and on interior surface of the gate recess.

Abstract: A method for forming a high-electron mobility transistor is disclosed. A substrate is provided. A buffer layer is formed over the substrate. A GaN channel layer is formed over the buffer layer. An AlGaN layer is formed over the GaN channel layer. A GaN source layer and a GaN drain layer are formed on the AlGaN layer within a source region and a drain region, respectively. A gate recess is formed in the AlGaN layer between the source region and the drain region. A p-GaN gate layer is then formed in and on the gate recess.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

Abstract: A high electron mobility transistor (HEMT) includes a buffer layer on a substrate, a barrier layer on the buffer layer, a p-type semiconductor layer on the buffer layer, a gate electrode on the p-type semiconductor layer, a source electrode and a drain electrode adjacent to two sides of the gate electrode on the barrier layer, a hard mask on the barrier layer and around the p-type semiconductor layer, the source electrode, and the drain electrode, and a passivation layer on the hard mask.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

Abstract: A motor includes a stator with a first stator, a second stator, and a third stator, each including at least one stator coil, and a rotor including a magnetic element, a first bearing, a second bearing, and a shaft, the stators generating a superimposed magnetic field together causing the magnetic element to rotate. When the magnetic element rotates in the first plane, the outer ring of the first bearing rotates. The center of the first bearing is located in a plane where the second bearing is located, and when the magnetic element rotates in the second plane, the inner ring of the second bearing rotates. A central axis of the shaft passes through the center of the first bearing; wherein the shaft is rotatably fixed to the first bearing and connected to the second bearing.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

Abstract: A multihull stepped planing boat with multiple independent elastic planing surfaces includes: a main hull, X front planing sub-hulls arranged side by side under a front portion of the main hull, and Y rear planing sub-hull arranged side by side under a rear portion of the main hull; wherein X and Y are positive integers, and 3?X+Y?8; the X front planing sub-hulls are equally spaced, and the Y rear planing sub-hulls are also equally spaced; there is a gap between the X front planing sub-hulls and the Y rear planing sub-hulls. The planing surface of the main hull is formed by a plurality of independent and spaced sub-planing surfaces. There is a certain elastic buffer space between each sub-planing surface and the main hull, and the shock absorption structures can absorb most of the shocks, thereby reducing the impact of water surface waves during high-speed navigation.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a second barrier layer on the first barrier layer; forming a first hard mask on the second barrier layer; removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

Abstract: A high electron mobility transistor (HEMT) and method for forming the same are disclosed. The high electron mobility transistor includes a substrate, a mesa structure disposed on the substrate, a passivation layer disposed on the mesa structure, and at least a contact structure disposed in the passivation and the mesa structure. The mesa structure includes a channel layer and a barrier layer disposed on the channel layer. The contact structure includes a body portion and a plurality of protruding portions. The body portion is through the passivation layer. The protruding portions connect to a bottom surface of the body portion and through the barrier layer and a portion of the channel layer.

Abstract: According to an embodiment of the present invention, a method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a second barrier layer on the first barrier layer; forming a first hard mask on the second barrier layer; removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.

Abstract: A mesa structure includes a substrate. A mesa protrudes out of the substrate. The mesa includes a slope and a top surface. The slope surrounds the top surface. A lattice damage area is disposed at inner side of the slope. The mesa can optionally further includes an insulating layer covering the lattice damage area. The insulating layer includes an oxide layer or a nitride layer.

Abstract: A method and the device of the working bucket number identification technology during the shoveling-and-loading process of the loader uses multi-sensor fusion technology for the three kinds of pressure sensors during the shoveling-and-loading process of the loader to realize the automatic identification of the bucket number during the shoveling-and-loading process. It can effectively improve and ensure the accuracy of the test data, while effectively preventing drivers from overworking. The method and device is also beneficial to the recognition of the loader working stage, and provides a good foundation for accurately identifying the working stage and realizing the dynamic prediction and control of the working process.

Abstract: A method for forming a high-electron mobility transistor is disclosed. A substrate is provided. A buffer layer is formed over the substrate. A GaN channel layer is formed over the buffer layer. An AlGaN layer is formed over the GaN channel layer. A GaN source layer and a GaN drain layer are formed on the AlGaN layer within a source region and a drain region, respectively. A gate recess is formed in the AlGaN layer between the source region and the drain region. A p-GaN gate layer is then formed in and on the gate recess.

Abstract: A high-electron mobility transistor includes a substrate, a GaN channel layer over the substrate, an AlGaN layer over the GaN channel layer, a gate recess in the AlGaN layer, a source region and a drain region on opposite sides of the gate recess, a GaN source layer and a GaN drain layer grown on the AlGaN layer within the source region and the drain region, respectively, a p-GaN gate layer in and on the gate recess; and a re-grown AlGaN film on the AlGaN layer, on the GaN source layer and the GaN drain layer, and on interior surface of the gate recess.

Abstract: Device, system and method for creating virtual credit are provided. The method includes acquiring user real-name information from a user interface by a terminal device, wherein an electronic exchange account associating with the acquired user real-name information is not saved in a first server; sending the user real-name information to a second server; detecting if a credit card account associating with the user real-name information is saved in the second server, and creating a virtual credit card account if the credit card account is saved in the second server; and storing the virtual credit card associated with the virtual credit card account in the data storage of the first server.

Abstract: A method for analyzing a process output and a method for creating an equipment parameter model are provided. The method for analyzing the process output includes the following steps: A plurality of process steps are obtained. A processor obtains a step model set including a plurality of first step regression models, each of which represents a relationship between N of the process steps and a process output. The processor calculates a correlation of each of the first step regression models. The processor picks up at least two of the first step regression models to be a plurality of second step regression models whose correlations are ranked at top among the correlations of the first step regression models. The processor updates the step model set by a plurality of third step regression models, each of which represents a relationship between M of the process steps and the process output.

Abstract: A high-electron mobility transistor includes a substrate; a buffer layer over the substrate; a GaN channel layer over the buffer layer; a AlGaN layer over the GaN channel layer; a gate recess in the AlGaN layer; a source region and a drain region on opposite sides of the gate recess; a GaN source layer and a GaN drain layer grown on the AlGaN layer within the source region and the drain region, respectively; and a p-GaN gate layer in and on the gate recess.

Abstract: The present disclosure provides a high electron mobility transistor (HEMT) including a substrate; a buffer layer over the substrate; a GaN layer over the buffer layer; a first AlGaN layer over the GaN layer; a first AlN layer over the first AlGaN layer; a p-type GaN layer over the first AlN layer; and a second AlN layer on the p-type GaN layer.