Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

Abstract: A gallium nitride device and a method for manufacturing a high electron mobility transistor are provided. The gallium nitride device includes a substrate, a channel layer disposed on the substrate, a barrier layer disposed on the channel layer, a cap layer disposed on the barrier layer, a gate disposed on the cap layer, a source, a drain, and ohmic sidewall dams. The source and the drain are formed in the cap layer and the barrier layer. Each of the source and the drain has a trench portion, and a contact below the trench portion and protruding into the channel layer. The ohmic sidewall dams are disposed on a sidewall of the trench portion of each of the source and the drain.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a second barrier layer on the first barrier layer; forming a first hard mask on the second barrier layer; removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.

Abstract: A semiconductor transistor structure with reduced contact resistance includes a substrate, a channel layer on the substrate, a barrier layer on the channel layer, a two-dimensional electron gas (2DEG) layer at an interface between the barrier layer and the channel layer, and a recess in a contact region. The recess penetrates through the barrier layer and extends into the channel layer. An Ohmic contact metal is disposed in the recess. The Ohmic contact metal is in direct contact with a vertical side surface of the barrier layer in the recess and in direct contact with an inclined side surface of the 2DEG layer and the channel layer in the recess.

Abstract: A kitchen container includes a container body, a cover body, a rotating mechanism, and a drive element. The rotating mechanism includes a moving rack transversely movable on the cover body, a main gear driven by the moving rack and a drive gear driven by the main gear. The drive element is connected with the drive gear. The main gear is linked with the drive gear through at least one transmission set. The transmission set is disposed on a sliding trough and is shifted with rotation of the main gear. The transmission set shifts on the sliding trough to be a linked state with the drive gear when the main gear rotates in a rotating direction, and the transmission set shifts on the sliding trough to be disengaged from the linked state with the drive gear when the main gear rotates in another rotating direction.

Abstract: A high electron mobility transistor includes a substrate, a mesa structure disposed on the substrate, a passivation layer disposed on the mesa structure, and at least a contact structure disposed in the passivation layer and the mesa structure. The mesa structure includes a channel layer, a barrier layer on the channel layer, two opposite first edges extending along a first direction, and two opposite second edges extending along a second direction. The contact structure includes a body portion and a plurality of protruding portions. The body portion penetrates through the passivation layer. The protruding portions penetrate through the barrier layer and a portion of the channel layer. In a top view, the body portion overlaps the two opposite first edges of the mesa structure without overlapping the two opposite second edges of the mesa structure.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a second barrier layer on the first barrier layer; forming a first hard mask on the second barrier layer; removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.

Abstract: A multihull stepped planing boat with multiple independent elastic planing surfaces includes: a main hull, X front planing sub-hulls arranged side by side under a front portion of the main hull, and Y rear planing sub-hull arranged side by side under a rear portion of the main hull; wherein X and Y are positive integers, and 3?X+Y?8; the X front planing sub-hulls are equally spaced, and the Y rear planing sub-hulls are also equally spaced; there is a gap between the X front planing sub-hulls and the Y rear planing sub-hulls. The planing surface of the main hull is formed by a plurality of independent and spaced sub-planing surfaces. There is a certain elastic buffer space between each sub-planing surface and the main hull, and the shock absorption structures can absorb most of the shocks, thereby reducing the impact of water surface waves during high-speed navigation.

Abstract: A high electron mobility transistor (HEMT) and method for forming the same are disclosed. The high electron mobility transistor includes a substrate, a mesa structure disposed on the substrate, a passivation layer disposed on the mesa structure, and at least a contact structure disposed in the passivation and the mesa structure. The mesa structure includes a channel layer and a barrier layer disposed on the channel layer. The contact structure includes a body portion and a plurality of protruding portions. The body portion is through the passivation layer. The protruding portions connect to a bottom surface of the body portion and through the barrier layer and a portion of the channel layer.

Abstract: The present disclosure provides a high electron mobility transistor (HEMT) including a substrate; a buffer layer over the substrate; a GaN layer over the buffer layer; a first AlGaN layer over the GaN layer; a first AlN layer over the first AlGaN layer; a p-type GaN layer over the first AlN layer; and a second AlN layer on the p-type GaN layer.

Abstract: This patent presents an attitude determination and control system based on a Quaternion Kalman Filter (QKF) with an extendable number of sensors and actuators. Furthermore, it is compatible with the spherical motor as its attitude actuator. The system includes a processor with a QKF, at least one direct attitude actuator, and at least two environmental sensors. Firstly, system dynamics calculates a first propagation attitude determination result. Next, update the first propagation with the attitude sensor measurements. Then, control the satellite's attitude via the attitude actuator closer to the attitude command provided by the user. The proposed system dynamic model could adjust the number of actuators and sensors freely without reprogramming the algorithms for new missions with new configurations on the actuators and sensors. Moreover, if some components fail, the algorithm can automatically remove those related sequences to avoid the overall failure of the system.

Abstract: This patent presents an attitude determination and control system based on a Quaternion Kalman Filter (QKF) with an extendable number of sensors and actuators. Furthermore, it is compatible with the spherical motor as its attitude actuator. The system includes a processor with a QKF, at least one direct attitude actuator, and at least two environmental sensors. Firstly, system dynamics calculates a first propagation attitude determination result. Next, update the first propagation with the attitude sensor measurements. Then, control the satellite's attitude via the attitude actuator closer to the attitude command provided by the user. The proposed system dynamic model could adjust the number of actuators and sensors freely without reprogramming the algorithms for new missions with new configurations on the actuators and sensors. Moreover, if some components fail, the algorithm can automatically remove those related sequences to avoid the overall failure of the system.

Abstract: This patent presents an attitude determination and control system based on a Quaternion Kalman Filter (QKF) with an extendable number of sensors and actuators. Furthermore, it is compatible with the spherical motor as its attitude actuator. The system includes a processor with a QKF, at least one direct attitude actuator, and at least two environmental sensors. Firstly, system dynamics calculates a first propagation attitude determination result. Next, update the first propagation with the attitude sensor measurements. Then, control the satellite's attitude via the attitude actuator closer to the attitude command provided by the user. The proposed system dynamic model could adjust the number of actuators and sensors freely without reprogramming the algorithms for new missions with new configurations on the actuators and sensors. Moreover, if some components fail, the algorithm can automatically remove those related sequences to avoid the overall failure of the system.

Abstract: A semiconductor transistor structure with reduced contact resistance includes a substrate, a channel layer on the substrate, a barrier layer on the channel layer, a two-dimensional electron gas (2DEG) layer at an interface between the barrier layer and the channel layer, and a recess in a contact region. The recess penetrates through the barrier layer and extends into the channel layer. An Ohmic contact metal is disposed in the recess. The Ohmic contact metal is in direct contact with a vertical side surface of the barrier layer in the recess and in direct contact with an inclined side surface of the 2DEG layer and the channel layer in the recess.