Abstract: The present application provides internet browsing especially a three dimensional webpage browsing methods and systems by using the movement of a computing device with a display. By moving the computing device, a user changes the location and the orientation of the computing device, and thus interacts with at least one information item in a first web page. The computing device measures the location difference and the orientation difference between the computing device and the information item, and determines whether each of the location difference and the orientation difference is within a threshold, respectively. If both the location and orientation differences are within the threshold for a predetermined time, the user is directed to a second web page.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

Abstract: A wireless power transfer apparatus for capacitive-inductive power transfer has a primary and a secondary device separated by the conductive member. The primary device has at least two transmitter plates configured to be capacitively coupled with the conductive member to induce a current flow and generate a magnetic field in the conductive member. The secondary device is connectable to a load and provided with a receiving coil configured to be inductively coupled with the conductive member.

Abstract: A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the fin-shaped structure into a first portion and a second portion, and a gate structure on the SDB structure. Preferably, the SDB structure includes silicon oxycarbonitride (SiOCN), a concentration portion of oxygen in SiOCN is between 30% to 60%, and the gate structure includes a metal gate having a n-type work function metal layer or a p-type work function metal layer.

Abstract: A heat dissipation device is adapted to be disposed on a primary heat source and a secondary heat source. The heat dissipation device includes a water cooling head module and a heat conducting member. The water cooling head module is disposed on the primary heat source. The heat conducting member is thermally coupled to the secondary heat source and extends into the water cooling head module.

Abstract: In an embodiment, a device includes: a back-side redistribution structure including: a metallization pattern on a first dielectric layer; and a second dielectric layer on the metallization pattern; a through via extending through the first dielectric layer to contact the metallization pattern; an integrated circuit die adjacent the through via on the first dielectric layer; a molding compound on the first dielectric layer, the molding compound encapsulating the through via and the integrated circuit die; a conductive connector extending through the second dielectric layer to contact the metallization pattern, the conductive connector being electrically connected to the through via; and an intermetallic compound at the interface of the conductive connector and the metallization pattern, the intermetallic compound extending only partially into the metallization pattern.

Abstract: The present disclosure provides a cement sintering device and a cement sintering method. The cement sintering device comprises an emitting module configured to emit laser to an irradiation area corresponding to the emitting module; a moving module configured to control the irradiation area of the emitting module to move so that the irradiation area covers a cement to be sintered and is moved along an extension direction of the cement; a detecting module configured to detect structural information about the cement covered by the irradiation area; and a control module configured to adjust operation parameters of the emitting module for emitting the laser based on the structural information. Based on the solution of the present disclosure, it is possible to achieve the effect of more accurately sintering.

Abstract: A method includes forming a passivation layer over a portion of a metal pad, forming a polymer layer over the passivation layer, and exposing the polymer layer using a photolithography mask. The photolithography mask has an opaque portion, a transparent portion, and a partial transparent portion. The exposed polymer layer is developed to form an opening, wherein the metal pad is exposed through the opening. A Post-Passivation Interconnect (PPI) is formed over the polymer layer, wherein the PPI includes a portion extending into the opening to connect to the metal pad.

Abstract: A method of determining uplink and downlink transmission configuration, a method of configuring uplink and downlink transmission and devices thereof are provided. The method of determining uplink and downlink transmission configuration applied to a UE includes: determining a correspondence relationship between a start position of uplink and downlink transmission period and a start position of radio frame, based on uplink and downlink transmission configuration parameters configured by a base station, where the uplink and downlink transmission configuration parameters include one set of uplink and downlink transmission configuration parameters or two sets of uplink and downlink transmission configuration parameters, and each set of uplink and downlink transmission configuration parameters includes an uplink and downlink transmission period.

Abstract: Embodiments include devices and methods for adaptive image processing in an unmanned autonomous vehicle (UAV). In various embodiments, an image sensor may capture an image, while a processor of the UAV obtains attitude information from one or more attitude sensors. Such information may include the relative attitude of the UAV and changes in attitude. The processor of the UAV may determine a UAV motion mode based, at least in part, on the obtained attitude information. The UAV motion mode may result in the modification of yaw correction parameters. The processor of the UAV may further execute yaw filtering on the image based, at least in part, on the determined motion mode.

Abstract: A method includes forming a metal gate structure over a first fin, where the metal gate structure is surrounded by a first dielectric material, and forming a capping layer over the first dielectric material, where an etch selectivity between the metal gate structure and the capping layer is over a pre-determined threshold. The method also includes forming a patterned hard mask layer over the first fin and the first dielectric material, where an opening of the patterned hard mask layer exposes a portion of the metal gate structure and a portion of the capping layer. The method further includes removing the portion of the metal gate structure exposed by the opening of the patterned hard mask layer.

Abstract: A connector comprises an insulation body having a plurality of first insulation partition ribs and a row of first contacts arranged on the insulation body at a first pitch. The row of first contacts includes a plurality of first ground contacts and a plurality of first signal contacts. At least two first signal contacts are disposed between two adjacent first ground contacts. Each of the first ground contacts and each of the first signal contacts has a first contact portion, a first fixation portion, and a first elastic arm between the first contact portion and the first fixation portion. Each first insulation partition rib is disposed between the first elastic arm of each first ground contact and the first elastic arm of one first signal contact adjacent to the first ground contact. No insulation rib is disposed between the first elastic arms of any two adjacent first signal contacts.

Abstract: Disclosed are an Ack/NACK reporting method and apparatus, a device and a storage medium. The method comprises: a UE determining, according to signaling sent by a base station, a time-domain position for reporting ACK/NACK corresponding to PDSCH transmission; and the UE reporting, at the time-domain position for reporting ACK/NACK, M pieces of ACKs/NACK which satisfy a definition condition and corresponding to the PDSCH transmissions, where M is an integer greater than 0.

Abstract: The present application discloses a method and an apparatus for implementing an OAM function. In this solution, a unified OAM management center processes, based on a unified OAM management data model, network OAM status information, but the unified OAM management data model is unrelated to a network technology used by a network entity.

Abstract: A device and a method for heating and curing artificial stone with microwave are provided. The device includes a microwave curing cavity, within which an incompletely cured artificial stone is placed, and microwave is used to heat the artificial stone to completely cure the artificial stone; wherein, a frequency of the microwave is in a range of 300˜1120 MHz. The present disclosure provides a separately designed microwave curing cavity, and utilizes 300˜1120 MHz microwave having a large penetrating depth, to realize a rapid curing of a large-sized artificial stone.

Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die, the encapsulant including fillers having an average diameter; a through via extending through the encapsulant, the through via having a lower portion of a constant width and an upper portion of a continuously decreasing width, a thickness of the upper portion being greater than the average diameter of the fillers; and a redistribution structure including: a dielectric layer on the through via, the encapsulant, and the integrated circuit die; and a metallization pattern having a via portion extending through the dielectric layer and a line portion extending along the dielectric layer, the metallization pattern being electrically coupled to the through via and the integrated circuit die.

Abstract: A semiconductor device includes a substrate includes a first layer and a second layer over the first layer, a bump disposed over the second layer, a molding disposed over the second layer and surrounding the bump, and a retainer disposed over the second layer, wherein the retainer is disposed between the molding and a periphery of the substrate. Further, a method of manufacturing a semiconductor device includes providing a substrate, disposing several bumps on the substrate, disposing a retainer on the substrate and surrounding the bumps, and disposing a molding between the bumps and the retainer.

Abstract: Provided is a metal gate structure and related methods that include performing a metal gate cut process. The metal gate cut process includes a plurality of etching steps. For example, a first anisotropic dry etch is performed, a second isotropic dry etch is performed, and a third wet etch is performed. In some embodiments, the second isotropic etch removes a residual portion of a metal gate layer including a metal containing layer. In some embodiments, the third etch removes a residual portion of a dielectric layer.

Abstract: A microelectromechanical systems package structure includes a first substrate, a transducer unit, a semiconductor chip and a second substrate. The first substrate defines a through hole. The transducer unit is electrically connected to the first substrate, and includes a base and a membrane. The membrane is located between the through hole and the base. The semiconductor chip is electrically connected to the first substrate and the transducer unit. The second substrate is attached to the first substrate and defines a cavity. The transducer unit and the chip are disposed in the cavity, and the second substrate is electrically connected to the transducer unit and the semiconductor chip through the first substrate.

Abstract: A non-contact heartbeat rate measurement system includes an image sensor, a target region selecting module, a heartbeat signal calculating module, a spectrum analyzing module, a vibration detecting module, a heartbeat peak selecting module. When a signal quality indicator is greater than a threshold value, and a first peak with global highest signal intensity in a heartbeat spectrum is similar to a face vibration frequency, the heartbeat peak selecting module selects a second peak with local highest signal intensity from a part frequency band of the heartbeat spectrum as an output heartbeat frequency. A non-contact heartbeat rate measurement method and an apparatus are disclosed herein.