Abstract: A semiconductor package includes a substrate, a first insulation layer, a conductive pad, a second insulation layer and a conductive trace. The first insulation layer is formed on the substrate and having a first through hole. The conductive pad is formed on the substrate through the first through hole. The second insulation layer has a first surface and a second through hole, wherein the second through hole extends to the conductive pad from the first surface. The conductive trace has a second surface and is connected to the conductive pad through the second through hole. The entire of the first surface is in the same level, and the entire of the second surface is in the same level.

Abstract: A lubricant composition with improved stability and tolerance for water hardness comprises a synthetic wax emulsion; an amine derivative; an emulsifier; and a sequestrant. The synthetic wax emulsion may include poly(ethyleneoxide)-based or poly(propyleneoxide)-based wax emulsions. The amine derivative may include alkyl C12-C14 oxy propyl diamine. The lubricant composition can be used for lubricating the passage of a container along a conveyor. The method includes applying the lubricant composition to at least a part of the container or the conveyor in an application cycle, where the application cycle includes a first period of time of dispensing the lubricant composition and a second period of time of not dispensing the lubricant composition.

Abstract: A semiconductor device includes a semiconductor substrate having a well region and a gate structure formed over the well region of the semiconductor substrate. The gate structure has a first sidewall and a second sidewall. The second sidewall is opposite the first sidewall. The semiconductor device also includes a gate spacer structure having two asymmetrical portions. One of the asymmetrical portions is formed on the first sidewall of the gate structure, and the other asymmetrical portion is formed on the second sidewall of the gate structure. The semiconductor device includes a source region and a drain region formed in the semiconductor substrate and aligned with the outer edges of the asymmetrical portions of the gate spacer structure. In some embodiments, the lateral distance between the drain region and the gate structure is greater than the lateral distance between the source region and the gate structure.

Abstract: A semiconductor device includes a semiconductor die having an active surface, an opposite surface, a vertical sidewall extending between the active surface and the opposite surface, and input/output (I/O) connections disposed on the active surface. A redistribution layer (RDL) is disposed on the active surface of the semiconductor die. A plurality of first connecting elements is disposed on the RDL. A molding compound encapsulates the opposite surface and the vertical sidewall of the semiconductor die. The molding compound also covers the RDL and surrounds the plurality of first connecting elements. An interconnect substrate is mounted on the plurality of first connecting elements and on the molding compound.

Abstract: Concentrated nitric acid cleaners employing the use of ethoxylated fatty alcohols, including a blend of polyethoxylated fatty alcohols, provide enhanced cleaning on metal and other surfaces, particularly stainless steel. Methods of use, including enhanced fatty soil removal and organic soil removal (such as soap scum) are also disclosed.

Abstract: A lubricant composition with improved stability and tolerance for water hardness comprises a synthetic wax emulsion; an amine derivative; an emulsifier; and a sequestrant. The synthetic wax emulsion may include poly(ethyleneoxide)-based or poly(propyleneoxide)-based wax emulsions. The amine derivative may include alkyl C12-C14 oxy propyl diamine. The lubricant composition can be used for lubricating the passage of a container along a conveyor. The method includes applying the lubricant composition to at least a part of the container or the conveyor in an application cycle, where the application cycle includes a first period of time of dispensing the lubricant composition and a second period of time of not dispensing the lubricant composition.

Abstract: A wafer-level chip-size package includes a semiconductor structure. A bonding pad is formed over the semiconductor structure, including a plurality of conductive segments. A conductive component is formed over the semiconductor structure, being adjacent to the bonding pad. A passivation layer is formed, exposing a portions of the conductive segments of the first bonding pad. A conductive redistribution layer is formed over the portions of the conductive segments of the first bonding pad exposed by the passivation layer. A planarization layer is formed over the passivation layer and the conductive redistribution layer, exposing a portion of the conductive redistribution layer. A UBM layer is formed over the planarization layer and the portion of the conductive redistribution layer exposed by the planarization layer. A conductive bump is formed over the UBM layer.

Abstract: A lubricant composition with improved stability and tolerance for water hardness comprises a synthetic wax emulsion; an amine derivative; an emulsifier; and a sequestrant. The synthetic wax emulsion may include poly(ethyleneoxide)-based or poly(propyleneoxide)-based wax emulsions. The amine derivative may include alkyl C12-C14 oxy propyl diamine. The lubricant composition can be used for lubricating the passage of a container along a conveyor. The method includes applying the lubricant composition to at least a part of the container or the conveyor in an application cycle, where the application cycle includes a first period of time of dispensing the lubricant composition and a second period of time of not dispensing the lubricant composition.

Abstract: A semiconductor device includes a semiconductor substrate having a first conductivity type, a first well region formed in a portion of the semiconductor substrate, having a second conductivity type that is the opposite of the first conductivity type. A second well region is formed in a portion of the first well region, having the first conductivity type. A first gate structure is formed over a portion of the second well region and a portion of the first well region. A first doped region is formed in a portion of the second well region. A second doped region is formed in a portion of the first well region, having the second conductivity type. A second dielectric layer is formed over a portion of the first gate structure, a portion of the first well region, and a portion of the second doped region.

Abstract: Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a base substrate having a first region and a second region; forming a first filling layer on the first region of the base substrate and a first hard mask layer on the first filling layer; performing a first treatment process on the second region of the base substrate using the first hard mask layer and the first filling layer as a mask; forming a second filling layer on the first region of the base substrate and a second mask on at least the second filling layer; removing the first hard mask layer and the first filling layer to expose the first region of the base substrate and to pattern the second hard mask layer on the second filling layer; and performing a second treatment process on the first region of the base substrate.

Abstract: Disclosed are a radio-frequency ablation catheter having a spiral structure and device thereof. The radio-frequency ablation catheter has an elongated catheter body. A spiral electrode support is arranged at the front end of the catheter body. Multiple electrodes are arranged on the electrode support. A control handle is arranged at the rear end of the catheter body. Wall-attachment adjusting wires having various structures can be arranged in the radio-frequency ablation catheter, so that the radio-frequency ablation catheter having a spiral structure can be adapted to target vessels of different diameters, and so that the electrodes on the electrode support have a good wall-attachment state.

Abstract: A semiconductor device includes a semiconductor substrate having a first conductivity type, a first well region formed in a portion of the semiconductor substrate, having a second conductivity type that is the opposite of the first conductivity type. A second well region is formed in a portion of the first well region, having the first conductivity type. A first gate structure is formed over a portion of the second well region and a portion of the first well region. A first doped region is formed in a portion of the second well region. A second doped region is formed in a portion of the first well region, having the second conductivity type. A second dielectric layer is formed over a portion of the first gate structure, a portion of the first well region, and a portion of the second doped region.

Abstract: The present disclosure provides an amplitude limiting system of insulated aerial work platform, including an insulated aerial work platform having a telescopic arm, an insulated folding arm and retractable supporting legs, a luffing cylinder, a first pressure sensor, a balance valve, a selector valve, a flow meter, and a controller; the luffing cylinder is installed between the telescopic arm and the insulated folding arm and includes a hydraulic pressure chamber; the first pressure sensor is connected to the hydraulic pressure chamber of the luffing cylinder and is electrically connected to the controller; the balancing valve is arranged on the luffing cylinder; the selector valve is connected to the balance valve; the flow meter is connected in between the selector valve with the balance valve and is electrically connected to the controller.

Abstract: A lubricant composition with improved stability and tolerance for water hardness comprises a synthetic wax emulsion; an amine derivative; an emulsifier; and a sequestrant. The synthetic wax emulsion may include poly(ethyleneoxide)-based or poly(propyleneoxide)-based wax emulsions. The amine derivative may include alkyl C12-C14 oxy propyl diamine. The lubricant composition can be used for lubricating the passage of a container along a conveyor. The method includes applying the lubricant composition to at least a part of the container or the conveyor in an application cycle, where the application cycle includes a first period of time of dispensing the lubricant composition and a second period of time of not dispensing the lubricant composition.

Abstract: A semiconductor device includes a semiconductor substrate having a first conductivity type, a first well region formed in a portion of the semiconductor substrate, having a second conductivity type that is the opposite of the first conductivity type. A second well region is formed in a portion of the first well region, having the first conductivity type. A first gate structure is formed over a portion of the second well region and a portion of the first well region. A first doped region is formed in a portion of the second well region. A second doped region is formed in a portion of the first well region, having the second conductivity type. A second dielectric layer is formed over a portion of the first gate structure, a portion of the first well region, and a portion of the second doped region.

Abstract: A semiconductor device capable of high-voltage operation includes a semiconductor substrate having a first conductivity type. A first well doped region is formed in a portion of the semiconductor substrate. The first well doped region has a second conductivity type. A first doped region is formed on the first well doped region, having the second conductivity type. A second doped region is formed on the first well doped region and is separated from the first doped region, having the second conductivity type. A first gate structure is formed over the first well doped region and is adjacent to the first doped region. A second gate structure is formed beside the first gate structure and is close to the second doped region. A third gate structure is formed overlapping a portion of the first gate structure and a first portion of the second gate structure.

Abstract: A semiconductor device includes a semiconductor substrate and a passive component. The passive component is formed on the semiconductor substrate and includes a first polysilicon (poly) layer, a salicide blockage (SAB) layer and a first salicide layer. The SAB layer is formed on the first poly layer. The first salicide layer is formed on the SAB layer.

Abstract: A semiconductor device includes a semiconductor substrate having a first conductivity type, a first well region formed in a portion of the semiconductor substrate, having a second conductivity type that is the opposite of the first conductivity type. A second well region is formed in a portion of the first well region, having the first conductivity type. A first gate structure is formed over a portion of the second well region and a portion of the first well region. A first doped region is formed in a portion of the second well region. A second doped region is formed in a portion of the first well region, having the second conductivity type. A second dielectric layer is formed over a portion of the first gate structure, a portion of the first well region, and a portion of the second doped region.

Abstract: The present invention provides a catheter apparatus with a carrier comprising right-handed wire helixes and left-handed wire helixes that are plainly or bi-axially woven into a tubular structure. A therapeutic assembly wraps around one of the wire helixes to stabilize an associated interstice of the tubular structure. The regular shape of the carrier may be quickly recovered after the carrier is seriously bent or distorted in an intravascular treatment.

Abstract: Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a base substrate having a first region and a second region; forming a first filling layer on the first region of the base substrate and a first hard mask layer on the first filling layer; performing a first treatment process on the second region of the base substrate using the first hard mask layer and the first filling layer as a mask; forming a second filling layer on the first region of the base substrate and a second mask on at least the second filling layer; removing the first hard mask layer and the first filling layer to expose the first region of the base substrate and to pattern the second hard mask layer on the second filling layer; and performing a second treatment process on the first region of the base substrate.