Abstract: A band-type fan structure includes a transmission band body and multiple blades. The multiple blades are side by side disposed on the transmission band body along the surface of the transmission band body in parallel to each other. Each two adjacent blades define therebetween a flow way. When the transmission band body is continuously reciprocally moved, the blades are driven by the transmission band body to continuously reciprocally move to disturb the air in the flow ways so as to produce an air volume.

Abstract: A method for fabricating a metal-oxide-semiconductor (MOS) device with isolated drain. The method performing operations of: forming a first well region embedded in a portion of a semiconductor substrate; forming a first patterned mask layer over the semiconductor substrate, exposing portions of the semiconductor substrate; performing a first ion implant process on the portions of the semiconductor substrate exposed by the first patterned mask layer; performing a second ion implant process to a second well region exposed, forming a fourth well region between the first well region and the second well region; performing a third implant process to the second well region, forming a fifth well region overlying the fourth well region; forming a source region in a portion of the third well region; and forming a drain region in a portion of the fifth well region.

Abstract: A method for fabricating a metal-oxide-semiconductor (MOS) device, performing operations of: forming a first well region embedded in a portion of a semiconductor substrate; forming a first patterned mask layer over the semiconductor substrate; performing a first ion implant process on two portions of the semiconductor substrate exposed by the first patterned mask layer; removing the first patterned mask layer and forming a second patterned mask layer over the semiconductor substrate, exposing a portion of the third well region; performing a second ion implant process to the portion of the third well region exposed by the second patterned mask layer; performing a third implant process to the portion of the third well region exposed by the second patterned mask layer; forming a source region in a portion of the third well region; and forming a drain region in a portion of the fifth well region.

Abstract: A method for fabricating a metal-oxide-semiconductor (MOS) device with isolated drain. The method performing operations of: forming a first well region embedded in a portion of a semiconductor substrate; forming a first patterned mask layer over the semiconductor substrate, exposing portions of the semiconductor substrate; performing a first ion implant process on the portions of the semiconductor substrate exposed by the first patterned mask layer; performing a second ion implant process to a second well region exposed, forming a fourth well region between the first well region and the second well region; performing a third implant process to the second well region, forming a fifth well region overlying the fourth well region; forming a source region in a portion of the third well region; and forming a drain region in a portion of the fifth well region.

Abstract: A method for fabricating a metal-oxide-semiconductor (MOS) device, performing operations of: forming a first well region embedded in a portion of a semiconductor substrate; forming a first patterned mask layer over the semiconductor substrate; performing a first ion implant process on two portions of the semiconductor substrate exposed by the first patterned mask layer; removing the first patterned mask layer and forming a second patterned mask layer over the semiconductor substrate, exposing a portion of the third well region; performing a second ion implant process to the portion of the third well region exposed by the second patterned mask layer; performing a third implant process to the portion of the third well region exposed by the second patterned mask layer; forming a source region in a portion of the third well region; and forming a drain region in a portion of the fifth well region.

Abstract: A MOS device with an isolated drain includes: a semiconductor substrate having a first conductivity type; a first well region embedded in a first portion of the semiconductor substrate, having a second conductivity type; a second well region disposed in a second portion of the semiconductor substrate, overlying the first well region and having the first conductivity type; a third well region disposed in a third portion of the semiconductor substrate, overlying the first well region having the second conductivity type; a fourth well region disposed in a fourth portion of the semiconductor substrate between the first and third well regions, having the first conductivity type; a gate stack formed over the semiconductor substrate; a source region disposed in a portion of the second well region, having the second conductivity type; and a drain region disposed in a portion of the fourth well region, having the second conductivity type.

Abstract: A MOS device with an isolated drain includes: a semiconductor substrate having a first conductivity type; a first well region embedded in a first portion of the semiconductor substrate, having a second conductivity type; a second well region disposed in a second portion of the semiconductor substrate, overlying the first well region and having the first conductivity type; a third well region disposed in a third portion of the semiconductor substrate, overlying the first well region having the second conductivity type; a fourth well region disposed in a fourth portion of the semiconductor substrate between the first and third well regions, having the first conductivity type; a gate stack formed over the semiconductor substrate; a source region disposed in a portion of the second well region, having the second conductivity type; and a drain region disposed in a portion of the fourth well region, having the second conductivity type.

Abstract: A swing fan structure includes a main body and multiple blades. The main body has an upper face and a lower face. The main body also has a long side and a short side. The blades are side by side disposed on the upper face of the main body in parallel to each other. The blades define therebetween a flow way. The blades are drivable by the main body to reciprocally move along the long side to create an air volume. The swing fan structure has a greatly minified volume. Also, the swing fan structure overcomes the shortcoming of unstable operation of the conventional fan caused by deflection of the blades in rotation.

Abstract: A multi-stage solar power device includes a light-permeable base plate, a plurality of light-condensing plates, a heat-conducting tube, at least one gas turbine, a gas inlet tube and a gas outlet tube. The light-condensing plates include a plurality of arcs with different length. The light-condensing plates are spaced from each other and arranged under the light-permeable base plate to define a plurality of light-reflecting chambers. The heat-conducting tube has first and second ends and extends through the light-reflecting chambers. At least one gas turbine is disposed in the heat-conducting tube. The gas inlet tube has first and second sections. The first section protrudes from the light-permeable base plate, and the second section extends through the light-permeable base plate. The gas outlet tube has one end protruding from the light-permeable base plate, as well as an other end extending through the light-permeable base plate.

Abstract: A band-type fan structure includes a transmission band body and multiple blades. The transmission band body has a lengthwise direction and a widthwise direction. The blades are side by side disposed on the transmission band body in parallel to each other and arranged in the lengthwise direction of the transmission band body. Each two adjacent blades define therebetween a flow way. The transmission band body is movable in the lengthwise direction, whereby the blades are driven by the transmission band body to transversely move to create an air volume. The band-type fan structure has a greatly minified volume. Also, the band-type fan structure overcomes the shortcoming of unstable operation of the conventional fan caused by deflection of the blades.

Abstract: The disclosure provides a method for identifying a storage device, which includes: obtaining, by a master control server, disk information of a storage device through a storage server; determining, by the master control server, that there is a storage device matching a device identifier according to the disk information, and entering a monitoring state; otherwise, creating a device identifier for the storage device and entering the monitoring state. The disclosure also provides a system for identifying a storage device. Through the method and the system, the storage devices are uniformly identified so as to facilitate unified management of the storage devices.

Abstract: A fan module includes a heat transfer unit, a heat radiation unit, and at least one cross-flow fan. The heat radiation unit has an air-in side and an air-out side. The cross-flow fan is located against the heat radiation unit, and includes a frame and a centrifugal fan blade assembly. The frame has an air outlet, a plurality of air inlets, and a plurality of frame sections. The frame sections respectively have a receiving recess therein, and the receiving recesses are communicable with one another to together define a receiving space for receiving the centrifugal fan blade assembly therein. With the above arrangements, the cross-flow fan can create increased air flow volume, the space occupied by the fan module can be reduced, and upgraded heat dissipation performance can be achieved.

Abstract: A thermal module includes a heat radiating unit, a heat transfer unit, and at least one cross-flow fan. The heat radiating unit has an air inlet and an air outlet that communicate with each other. The heat transfer unit has a heat absorbing section attached to a heat source and a heat dissipating section extended from the heat absorbing section to connect to the heat radiating unit. The cross-flow fan is arranged opposite to the heat radiating unit with an air-out side of the cross-flow fan located adjoining to the air inlet of the heat radiating unit. With the above arrangements, the thermal module occupies a largely reduced area while providing largely upgraded heat dissipation effect.

Abstract: A computer readable medium comprising multiple instructions stored in a computer readable device, upon executing these instructions, a computer performing the following steps: providing a first semiconductor layout and a second semiconductor layout predetermined to be fabricated on different material layers of a semiconductor device, the second semiconductor layout comprising a circuit pattern; setting a forbidden area of the circuit pattern on the first semiconductor layout according to a restriction condition; defining at least a virtual pattern arrangement area on a portion of the first semiconductor layout which does not correspond to the forbidden area; and selecting a positioning point at a boundary of the virtual pattern arrangement area and providing a virtual pattern array in the virtual pattern arrangement by taking the positioning point as an origin of a coordinate system of the virtual pattern array.

Abstract: A tube-type wind power generator includes an intake tube, an exhaust tube and a wind power generation device. The intake tube has a first end, a second end and an intake air channel, wherein the first end has a plurality of air inlets. A narrow portion is formed between the first and second ends. The exhaust tube surrounds the intake tube and has an opening end and a closed end, wherein the opening end has a plurality of windward openings and a plurality of air-guiding openings. An exhaust channel is defined between the exhaust tube and the intake tube. A gap is defined between the closed end of the exhaust tube and the second end of the intake tube. The wind power generation device has an axial-flow type impeller and a generator, wherein the axial-flow type impeller is disposed at the narrow portion of the intake tube.

Abstract: A multi-stage solar power device includes a light-permeable base plate, a plurality of light-condensing plates, a heat-conducting tube, at least one gas turbine, a gas inlet tube and a gas outlet tube. The light-condensing plates include a plurality of arcs with different length. The light-condensing plates are spaced from each other and arranged under the light-permeable base plate to define a plurality of light-reflecting chambers. The heat-conducting tube has first and second ends and extends through the light-reflecting chambers. At least one gas turbine is disposed in the heat-conducting tube. The gas inlet tube has first and second sections. The first section protrudes from the light-permeable base plate, and the second section extends through the light-permeable base plate. The gas outlet tube has one end protruding from the light-permeable base plate, as well as an other end extending through the light-permeable base plate.

Abstract: An intake and exhaust structure includes an outer duct, an inner duct and an air-guiding cover. The outer duct has a first end and a second end. The inner duct has a first end, a second end and an intake air channel. The inner duct is disposed in the outer duct, and a circular air channel is defined between the inner and outer ducts. The air-guiding cover has an inner wall and an air inlet at two ends thereof, wherein the inner wall is coupled with the second end of the inner duct.

Abstract: A method for manufacturing three-terminal solar cell array is provided. In this method, only four major scribing or etching steps are needed to expose the three conductive layers of the three-terminal solar cell and isolate the individual solar cells.

Abstract: A multi-terminal solar panel includes a first substrate, a first solar cell layer, a transparent intercellular layer, a second solar cell layer and a second substrate. The first solar cell layer is disposed on the first substrate and has a first bandgap. The first solar cell layer includes two first terminal outputs, arranged substantially in parallel with each other, at two opposite edges thereof. The transparent intercellular layer is disposed on the first solar cell layer and exposes the two first terminal outputs. The second solar cell layer is disposed on the transparent intercellular layer and has a second bandgap. The second solar cell layer includes two second terminal outputs, arranged substantially in parallel with each other, at two opposite edges thereof. The second substrate is disposed on the second solar cell layer, wherein the two second terminal outputs are substantially perpendicular to the two first terminal outputs.

Abstract: A method for manufacturing three-terminal solar cell array is provided. In this method, only four major scribing or etching steps are needed to expose the three conductive layers of the three-terminal solar cell and isolate the individual solar cells.