Abstract: An apparatus for detecting the presence of assembly related defects on a semiconductor device including an edge ring having a resistance value and including one or more layers configured to at least partially cover the semiconductor device in a first direction. The one or more layers are divided into a first section and a second section. Each layer of the one or more layers are in electrical communication with one another. The resistance value of the edge ring is at a first resistance value associated with the first and second sections being intact. At least one of the first section and second section is configured to break in response to an assembly related defect, and the resistance value of the edge ring is configured to change from the first resistance value to a second resistance value in response to at least one of the first and second sections being broken.

Abstract: A compression-molding method for a permanent includes: providing a drive coil to generate an electromagnetic force when a transient current is passed into the drive coil, so as to apply a molding compression force to magnetic powder under compression, and providing an orientation coil to generate an orientation magnetic field when a transient current is passed into the orientation coil, thereby providing the magnetic powder under compression with an anisotropic property; and synchronously passing the transient currents to the drive coil and the orientation coil to synchronously generate the electromagnetic force and the orientation magnetic field, thereby completing compression-molding of the permanent magnet, wherein a magnitude of the electromagnetic force and an intensity of the orientation magnetic field are respectively changed by changing peak values of the transient currents.

Abstract: A thermoplastic elastomer for profile control and water shutoff is prepared from the following raw materials in parts by weight: 8-10 parts of a component A, 1-3 parts of a strong acid, 1-3 parts of a hydrophobic modifier and 100-105 parts of water. The component A is one of polyethylene glycol, polyvinylether, polyvinyl alcohol, copolymer of acrylamide and acrylonitrile. The strong acid is one of concentrated hydrochloric acid and concentrated sulfuric acid. The hydrophobic modifier is any one of formaldehyde, acetaldehyde, propionaldehyde, butyraldehyde, ?-propiolactone, ?-butyrolactone, ?-valerolactone, methyltriacetylsilane, methyltrimethylsilane, butyl acrylate and ethylene glycol dimethacrylate. The thermoplastic elastomer for profile control and water shutoff provided by the disclosure has the advantages of one-step preparation and molding, strong deformation capability, temperature resistance, salt tolerance, strong stability and the like, and is suitable for large-scale production and application.

Abstract: The storage device that includes a non-volatile memory with a control circuitry that is communicatively coupled to an array of memory cells that are arranged in a plurality of word lines. The control circuitry is configured to program the memory cells in a plurality of programming loops. The programming loops include applying a programming pulse to a selected word line of the plurality of word lines. The programming loops also include applying a verify pulse VN to the selected word line to simultaneously verify a lower tail of the memory cells being programmed to a data state N and an upper tail of the memory cells that have been programmed to a data state N?1. The data state N?1 has a lower voltage threshold than the data state N.

Abstract: The disclosure provides a resonator and a filter. The resonator includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure successively includes a lower electrode layer, a piezoelectric layer and an upper electrode layer from bottom to top. A cavity is formed between the substrate and the multilayer structure, and the cavity includes a lower half cavity below an upper surface of the substrate and an upper half cavity beyond the upper surface of the substrate and protruding toward the multilayer structure. A resonator with novel structure and good performance is formed by providing the cavity with the lower half cavity below the upper surface of the substrate and the upper half cavity above the upper surface of the substrate.

Abstract: Embodiments of this application disclose a packet processing method. The method in the embodiments of this application includes: receiving a first negotiation packet from a second network device based on a first interface of a first network device, where the first negotiation packet includes a first source media access control MAC address; determining whether the first source MAC address is the same as a first locked MAC address stored by the first network device, where the first locked MAC address is a MAC address of a network device that is determined by the first network device and that has established negotiation with the first network device; and when it is determined that the first source MAC address is different from the first locked MAC address stored by the first network device, skipping updating a link status of a first link based on the first negotiation packet.

Abstract: A phase shifter, a manufacture method for manufacturing a phase shifter, a drive method for driving a phase shifter, and an electronic device are provided. The phase shifter includes a dielectric substrate, and a transmission line, a dielectric layer, an insulating layer, and a metal layer on the dielectric substrate. In a direction perpendicular to a first surface of the dielectric substrate, the dielectric layer and the insulating layer are between the metal layer and the transmission line, a material of the dielectric layer is a semiconductor material; and an orthographic projection of the metal layer on the dielectric substrate, an orthographic projection of the insulating layer on the dielectric substrate, and an orthographic projection of the dielectric layer on the dielectric substrate at least partially overlap. The present disclosure provides a new phase shifter based on a metal-insulator-semiconductor capacitor structure.

Abstract: A lifting/lowering underframe and a load-bearing device having same. The lifting/lowering underframe comprises a lifting/lowering mechanism (2) which comprises a first lifting/lowering frame (21), a second lifting/lowering frame (22) and a driving member (23). The two ends of the driving member (23) are connected to the first lifting/lowering frame (21) and the second lifting/lowering frame (22) respectively; the driving member (23) is an electric push rod, and the driving member (23) kept between the first lifting/lowering frame (21) and the second lifting/lowering frame (22) can electrically drive the first lifting/lowering frame (21) and the second lifting/lowering frame (22) to move relative to each other. The lifting/lowering mechanism (2) is easy to maintain, has low noise and can work normally in high/low temperature and anticorrosion/explosion-proof harsh environments.

Abstract: A memory die assembly, comprising a non-volatile memory structure, performs autonomous testing of the memory die assembly by repeatedly performing a group of tests for multiple cycles such that the group of tests includes programming, erasing and reading the non-volatile memory structure. Failure events from the tests are recorded by storing error data for each recorded failure event including a location in the non-volatile memory structure of the failure event, a type of test that failed and a cycle during which the failure event occurred.

Abstract: A non-volatile memory system includes a control circuit connected to non-volatile memory cells. The control circuit is configured to concurrently program memory cells connected to different word lines that are in different sub-blocks of different blocks in different planes of a die.

Abstract: There is provided a liquid crystal phase shifter including first and second substrates opposite to each other, and a liquid crystal layer between the first and second substrates. The first substrate includes a first base plate and a first electrode layer at a side of the first base plate proximal to the liquid crystal layer. The second substrate includes a second base plate and a second electrode layer at a side of the second base plate proximal to the liquid crystal layer. The first electrode layer includes a main body structure having a first side and a second side opposite to each other with respect to an extension direction of the main body structure, and a plurality of branch structures connected to at least one of the first side and the second side of the main body structure. The second electrode layer includes a plurality of first fingers.

Abstract: A mechanical structure for installing cover plates of a pasta machine includes at least two brackets arranged symmetrically; a plurality of cover plates arranged between the two brackets, two ends of each cover plate are respectively and detachably connected to the two brackets. The cover plates are integrally formed by sheet metal technology. The cover plates are connected/mounted to brackets respectively through a snap-on and/or a slide-on connection.

Abstract: A memory system separately programs memory cells connected by a common word line to multiple sets of data states with the set of data states having higher threshold voltage data states being programmed before the set of data states having lower threshold voltage data states. The memory system also separately programs memory cells connected by an adjacent word line to the multiple sets of data states such that memory cells connected by the adjacent word line are programmed to higher data states after memory cells connected by the common word line are programmed to higher data states and prior to memory cells connected by the common word line are programmed to lower data states.

Abstract: The present disclosure relates to methods and apparatus for mapping a source location of input data for processing by a graphics processing unit. The apparatus can configure a processing element of the graphics processing unit with a predefined rule for decoding a data source parameter for executing a task by the graphics processing unit. Moreover, the apparatus can store the parameter in local storage of the processing element and configure the processing element to decode the parameter according to the at least one predefined rule to determine a source location of the input data and at least one relationship between invocations of the task. The apparatus can also load, to the local storage of the processing element, the input data from a plurality of memory addresses of the source location determined by the parameter. A one logic unit can then execute the task on the loaded input data.

Abstract: An electroosmotic drive module comprises: a porous dielectric film; two electrodes respectively provided on opposite sides of the porous dielectric film; and a porous insulating layer, one electrode being disposed between the porous dielectric film and the insulating layer. An implantable electroosmotic micropump comprises a housing, and at least one electroosmotic drive module is provided in the housing. There are a plurality of electroosmotic drive modules, and the plurality of electroosmotic drive modules are connected in series end to end, such that heterogeneous integrated assembly between different materials such as electrodes, films, and housings can be achieved.

Abstract: Provided are a heterogeneous link data translation and distribution method, system, device and a storage medium. The heterogeneous link data translation and distribution method includes: original data sent by a first device in a heterogeneous link is received; a heterogeneous link routing table is queried according to the original data to obtain routing information and data protocol information of a second device to be connected to the first device; the original data is translated into data to be distributed conforming to the data protocol information of the second device; and the data to be distributed is sent to the second device according to the routing information of the second device.

Abstract: The present disclosure relates to foam beads of an elastomeric composition comprising a propylene-based elastomer. The foam bead has a density of less than 0.5 g/cm3. The foam beads can be made from pellets of elastomeric compositions by expanding with supercritical fluid blowing agent. The foamed bead has reduced lightness while maintaining elasticity.

Abstract: The present invention proposes a semiconductor device. The semiconductor device includes a first and a second transistor sets, a fin pattern, a rare earth oxide layer and an insulation layer. The first and a second transistor sets commonly have at the bases thereof a buried oxide layer (BOX), wherein the first transistor set has a rare earth oxide. The fin pattern on the BOX within a first region for the first transistor set and a second region for the second transistor set. The rare earth oxide layer includes the rare earth oxide and is formed on the BOX and the fin pattern in the first region. The insulation layer is formed on the rare earth oxide layer in the first region, the BOX and the fin pattern in the second region.

Abstract: A non-volatile storage apparatus comprises a plurality of memory cells that store host data and two models, a control circuit for writing to and reading from the memory cells, and an inference circuit. The inference circuit uses the first model with a first set of one or more metrics describing current operation of the non-volatile storage apparatus to make a first level prediction about defects and uses the second model with a second set of one or more metrics describing current operation of the non-volatile storage apparatus to make a second level prediction about defects. In one embodiment, the first level prediction is faster to make and uses less data collection, but is not as reliable, as the second level prediction. While second level prediction is more reliable, it takes more time to perform and requires a more intensive data collection, so it is only used when needed.

Abstract: A method to form a fin structure on deep trenches (DTs) for a semiconductor device includes the following steps: A buried oxide layer (BOX) having the DTs, and silicon polies in the DTs is provided. A fin on the BOX and the silicon polies having poly fences is provided. A first mask is disposed on the fin. A liner is disposed on the BOX and the first mask, wherein the liner has a first part above the fin, a second part at lateral sides of the fin and a third part on the DTs and the BOX. A second mask is disposed on the first and the second parts of the liner. The second mask and the third parts of the liner are removed to reveal the first and the second parts of the liner. The poly fences are removed and spacers at the lateral sides are formed.