Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.

Abstract: Apparatuses and techniques are described for detecting a defect in a memory cell array during program operations. A defect can be detected by comparing the programming speed of memory cells connected to different word lines, for one or more programmed data states. The comparison can involve adjacent word lines in a block, or word lines in different blocks and planes. The comparison involves comparing two word lines in terms of a number of program-verify loops used to reach the programmed data states or to transition between programmed data states. If a program loop delta is not within an allowable range for one or more of the programmed data states, it can be concluded that a defect is present. The block which has the slower programming word line can be identified as a bad block.

Abstract: The present disclosure belongs to the technical field of pathogen detection, in particular to loop-mediated isothermal amplification (LAMP) primer sets for detecting porcine susceptibility-related pathogenic bacteria, and a kit, a LAMP chip and use based on the same. The LAMP primer sets for detecting porcine susceptibility-related pathogenic bacteria include an Actinobacillus pleuropneumoniae primer set, a Haemophilus parasuis primer set, a Salmonella choleraesuis primer set, a Bordetella bronchiseptica primer set, a Pasteurella multocida primer set, a Streptococcus suis primer set, and an Erysipelothrix rhusiopathiae primer set.

Abstract: A fingerprint detection apparatus and an electronic device are provided. The fingerprint detection apparatus is applied under a display screen to implement under-screen optical fingerprint identification, including: a fingerprint sensor; the fingerprint sensor includes: N groups of sub-pixels, where N is a positive integer greater than 1; and different groups of sub-pixels in the N groups of sub-pixels respectively receive light signals with different characteristics in light signals returned by reflection or scattering via a finger, and light signals received by each group of sub-pixels in the N groups of sub-pixels are used to form one pixel in a fingerprint image of the finger.

Abstract: The present application discloses a CT system and a detection apparatus for the CT system. The detection apparatus includes: a high-energy detector assembly including a plurality of rows of high-energy detectors arranged along a predetermined trajectory; a low-energy detector assembly including a plurality of rows of low-energy detectors arranged at intervals along the predetermined trajectory, the low-energy detector assembly and the high-energy detector assembly being disposed in a stack; a number of rows of the low-energy detectors is smaller than a number or rows of the high-energy detectors; and each row of the low-energy detectors covers a row of high-energy detectors.

Abstract: Apparatuses, systems, and methods for direct refresh management (DRFM) sampling protection. A memory receives a DRFM address and DRFM sampling command from a controller. The memory also samples addresses into an aggressor register. Responsive to receiving the DRFM address, the memory may prevent addresses which match the DRFM address from being added to the aggressor register for at least a period of time. For example, a protect flag may be activated for the period of time. If the aggressor register already contained an address which matched the DRFM address, it may be removed.

Abstract: The present disclosure proposes a pattern matching device capable of achieving matching processing that is characterized by involving a learning function even for a semiconductor pattern including a repetitive pattern, in particular. The pattern matching device pertaining to the present disclosure is provided with a learning unit for estimating a first correlation image having, as pixel values thereof, numerical values representing a correlation between a first image and a second image. The pattern matching device calculates a second correlation image having, as pixel values thereof, numerical values representing the correlation between a derivative image generated from the first image and the first image, and the learning unit performs learning so as to reduce the difference between the first correlation image and the second correlation image (refer to FIG. 1).

Abstract: A connection structure of a thin film electrode and a housing includes at least one thin film electrode unit and a housing; the electrode unit includes a porous thin film, a first electrode and a second electrode attached to two sides of the film; a part of the film and a part of the first electrode form a first electrical connection unit; a part of the film and a part of the second electrode form a second electrical connection unit; at least one installation groove is provided on the inner wall surface of the housing; the electrode unit is provided in the installation groove; at least one communication unit communicated with the installation groove is further provided on the outer wall surface of the housing; the first electrical connection unit and the second electrical connection unit are respectively communicated with an external circuit of the housing through the communication unit.

Abstract: The invention discloses a transistor structure including a substrate, a semiconductor layer disposed on the substrate and a gate layer disposed on the semiconductor layer, wherein the gate layer includes at least one gate having a first height, a first side and a second side opposite to the first side, a first dielectric spacer is disposed at the first side of the at least one gate, a first air spacer having a second height is disposed inside the first dielectric spacer, and the second height is lower than the first height.

Abstract: To remedy short term data retention issues, a non-volatile memory performs a multi-pass programming process to program data into a set of non-volatile memory cells and identifies non-volatile memory cells that experienced downward threshold voltage drift after a first pass of the multi-pass programming process and prior to a final pass of the multi-pass programming process. The final pass of the multi-pass programming process comprises programming non-volatile memory cells not identified to have experienced the downward threshold voltage drift to a set of final target threshold voltages and purposefully overprogramming non-volatile memory cells identified to have experienced the downward threshold voltage drift to threshold voltages greater than respective final target threshold voltages by one or more offsets.

Abstract: A compression-molding method for a permanent includes: providing a drive coil to generate an electromagnetic force when a transient current is passed into the drive coil, so as to apply a molding compression force to magnetic powder under compression, and providing an orientation coil to generate an orientation magnetic field when a transient current is passed into the orientation coil, thereby providing the magnetic powder under compression with an anisotropic property; and synchronously passing the transient currents to the drive coil and the orientation coil to synchronously generate the electromagnetic force and the orientation magnetic field, thereby completing compression-molding of the permanent magnet, wherein a magnitude of the electromagnetic force and an intensity of the orientation magnetic field are respectively changed by changing peak values of the transient currents.

Abstract: Apparatuses and techniques are described for obtaining a threshold voltage distribution for a set of memory cells based on a user read mode. The user read mode can be based on various factors including a coding of a page and an increasing or decreasing order of the read voltages. The read process for the Vth distribution is made to mimic the read mode which is used when the memory device is in the hands of the end user. This results in a Vth distribution which reflects the user's experience to facilitate troubleshooting. In some cases, one or more dummy read operations are performed, where the read result is discarded, prior to a read operation which is used to build the Vth distribution.

Abstract: Embodiments of this application provide antenna switching methods and apparatuses. In an implementation, a first communication device determines a first antenna identifier based on air interface transmission information, the first communication device sends the first antenna identifier to a digital switch, and the digital switch switches from a second switch state to a first switch state based on the first antenna identifier, where the first switch state indicates that a second communication device communicates with the first antenna within a first time unit, and the second switch state indicates that the second communication device communicates with a second antenna within a second time unit.

Abstract: A control system includes: a fracturing control device configured to acquire a target fracturing pressure of a fracturing unit, perform closed-loop control on the fracturing unit by taking the target fracturing pressure as a control target, and set a target sand blending pressure for the sand blending unit; a sand blending control device configured to perform closed-loop control on the sand blending unit by taking the target sand blending pressure as a control target.

Abstract: A memory apparatus and operating method are provided. The apparatus includes memory cells connected to word lines and disposed in memory holes and configured to retain a threshold voltage. The memory holes are organized in rows grouped in strings. A control means is coupled to the word lines and the memory holes and programs the memory cells associated with a first one of the strings in a program operation and acquire a smart verify programming voltage in a smart verify operation including smart verify loops. The control means discards the smart verify programming voltage and determines another smart verify programming voltage in another smart verify operation on the memory cells associated with a second one of the strings in response to a quantity of the smart verify loops needed to complete programming of the memory cells associated with the first one of the strings being outside a predetermined threshold criteria.

Abstract: Apparatuses, systems, and methods for sample rate adjustment. A memory may sample row addresses based on a sampling rate to determine aggressor addresses. The memory includes a sample adjustment circuit which monitors a rate of refresh operations and adjusts the sampling rate based on the monitored rate. The sample adjustment circuit may provide a calculated temperature value based on the monitored rate, and the calculated temperature may be used to set a sampling rate. The refresh rate may be based on a measured temperature.

Abstract: A motor malfunction monitoring device for monitoring a malfunction of a drive motor, includes: vibration sensors for detecting for one or more components of the drive motor transverse vibration in a direction parallel to a mounting plane of the drive motor and perpendicular to a longitudinal direction of the drive motor or longitudinal vibration in a direction perpendicular to both the mounting plane and the longitudinal direction of the drive motor; a voltage sensor for detecting a voltage of the drive motor or a current sensor for detecting a current of the drive motor; and a data storage storing a database of normal operation spectrums of one of the transverse vibration or the longitudinal vibration during a normal operation of the drive motor, and of one of the voltage or the current during a normal operation of the drive motor.

Abstract: Disclosed is a slag discharging method in a process of producing ultra-low phosphorus steel, which relates to the technical field of iron and steel smelting, and in which molten steel is mixed with lime first to produce basic slag; then converting is performed with oxygen to increase the oxidizability of the basic slag; and a carbon-containing reducing agent is finally added, so that in the process that the carbon is oxidized to release a large amount of carbon monoxide gas, phosphates are captured, and the basic slag is rapidly foamed and overflows from the opening of the steel ladle, so that conditions are no longer available for rephosphorization. Also disclosed is a method for producing ultra-low phosphorus steel, which includes the above-described slag discharging method in a process of producing ultra-low phosphorus steel, and refining and ingotting after slag discharge.

Abstract: A non-volatile memory includes memory cells, word lines connected to the memory cells, and a set of regular control gate drivers connected to the word lines. The control gate drivers include different subsets of control gate drivers that receive different sources of voltage and provide different output voltages. A redundant control gate driver, that receives the different sources of voltage and provides the different output voltages, is included that can replace any of the regular control gate drivers.

Abstract: Embodiments of the disclosure are drawn to apparatuses, systems, and methods for dynamic targeted refresh steals. A memory bank may receive access commands and then periodically enter a refresh mode, where auto refresh operations and targeted refresh operations are performed. The memory bank may receive a refresh management command based on a count of access commands directed to the memory bank. Responsive to the refresh management signal, a panic targeted refresh operation may be performed on the memory bank. A number of times the refresh management signal was issued may be counted, and based on that count a next periodic targeted refresh operation may be skipped.