Abstract: A transient electromagnetic device with variable shape and turns includes squares, a transmitting coil carrying frame, a transmitting coil, a turns-variable device, a current generator and a working power supply. The transmitting coil carrying frame is arranged inside the transmitting coil; the transmitting coil carrying frame is configured as a carrier of the transmitting coil, and configured for adjusting a side length of the transmitting coil and a shape of the transmitting coil; the square is configured for clamping and connecting the transmitting coil and the transmitting coil carrying frame to fix the transmitting coil to the transmitting coil carrying frame. The current generator is configured for generating transient current; the turns-variable device is configured for changing the turns of the transmitting coil; and the transmitting coil is configured for transmitting the transient current to a target area to be measured.

Abstract: The technology of this application relates to a frontlight module and a display apparatus. The frontlight module is disposed on a side of a display panel. The frontlight module includes a light source, a light guide plate, and light guide dots. The light guide plate includes a first surface and a second surface that are disposed opposite to each other. The display panel is disposed facing the second surface. The light source is disposed on a side surface of the light guide plate. A plurality of light guide dots are disposed on the first surface or the second surface of the light guide plate. Each light guide dot has a light guide surface disposed at an angle with respect to a surface of the light guide plate. Light is fully reflected and/or refracted on the light guide surfaces to propagate to the display panel.

Abstract: An optoelectronic device includes a first electrode, a second electrode that is spaced apart from the first electrode, an optoelectronic unit that is disposed between the first electrode and the second electrode, an insulating layer and a driving electrode. The optoelectronic unit includes an optoelectronic stack emitting or absorbing at least two wavelengths of light. The insulating layer is disposed on a lateral side of the optoelectronic stack that extends in a stacking direction of the optoelectronic stack. The driving electrode is disposed on the insulating layer at a location corresponding in position to the optoelectronic unit and is separated from the first and second electrodes.

Abstract: A technique for providing search results may include determining a first entity type, a second entity type, and a relationship type based on a compositional query. The technique may also include identifying nodes of a knowledge graph corresponding to entity references of the first entity type and entity references of the second entity type. The technique may also include determining from the knowledge graph an attribute value corresponding to the relationship type for each entity reference of the first entity type and for each entity reference of the second entity type. The technique may also include comparing the attribute value of each entity reference of the first entity type with the attribute value of each entity reference of the second entity type. The technique may also include determining one or more resultant entity references from the entity references of the first entity type based on the comparing.

Abstract: A semiconductor device includes a fin structure disposed over a substrate. The semiconductor device includes a first interfacial layer straddling the fin structure. The semiconductor device includes a gate dielectric layer extending along sidewalls of the fin structure. The semiconductor device includes a second interfacial layer overlaying a top surface of the fin structure. The semiconductor device includes a gate structure straddling the fin structure. The first interfacial layer and the gate dielectric layer are disposed between the sidewalls of the fin structure and the gate structure.

Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.

Abstract: A package structure including a redistribution circuit structure, a wiring substrate, first conductive terminals, an insulating encapsulation, and a semiconductor device is provided. The redistribution circuit structure includes stacked dielectric layers, redistribution wirings and first conductive pads. The first conductive pads are disposed on a surface of an outermost dielectric layer among the stacked dielectric layers, the first conductive pads are electrically connected to outermost redistribution pads among the redistribution wirings by via openings of the outermost dielectric layer, and a first lateral dimension of the via openings is greater than a half of a second lateral dimension of the outermost redistribution pads. The wiring substrate includes second conductive pads. The first conductive terminals are disposed between the first conductive pads and the second conductive pads. The insulating encapsulation is disposed on the surface of the redistribution circuit structure.

Abstract: Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.

Abstract: A radar system includes an ultrasonic radar unit and a warning device. The ultrasonic radar unit is configured to be detachably mounted on a vehicle, and is configured to output a pairing signal when a pairing function is activated and output a warning signal upon detecting an object that is within a range. The warning device is configured to be electrically connected to the ultrasonic radar unit and to be mounted inside the vehicle. The warning device is configured to wirelessly communicate with the ultrasonic radar unit to receive the warning signal and the pairing signal; when receiving the pairing signal, couple the ultrasonic radar unit to one of a plurality of warning areas that is on the warning device according to the pairing signal; control one of the warning areas that is coupled to the ultrasonic radar unit to output a visual warning upon receiving the warning signal.

Abstract: The present disclosure relates to a switch control method for a rail transit signal system, and an apparatus for the method. When a switch control command of the signal system fails or the signal system confirms agreement with local switch control, the method is configured for performing maintenance operation on a switch via the local switch control apparatus. Compared to the prior art, the present disclosure has the advantages of meeting the requirement of the local switch control, ensuring the safety of a maintenance person and operation, etc.

Abstract: Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.

Abstract: A semiconductor device and method of manufacture are provided which utilize a remote plasma process which reduces or eliminates segregation of material. By reducing segregation of the material, overlying conductive material can be deposited on a smoother interface. By depositing on smoother interfaces, overall losses of the deposited material may be avoided, which improves the overall yield.

Abstract: A method of forming a semiconductor device includes: forming a first conductive feature in a first dielectric layer disposed over a substrate; forming a second dielectric layer over the first dielectric layer; etching the second dielectric layer using a patterned mask layer to form an opening in the second dielectric layer, where the opening exposes the first conductive feature; performing an ashing process to remove the patterned mask layer after the etching; wet cleaning the opening after the ashing process, where the wet cleaning enlarges a bottom portion of the opening; and filling the opening with a first electrically conductive material.

Abstract: A semiconductor device and method of manufacture are provided which utilize a remote plasma process which reduces or eliminates segregation of material. By reducing segregation of the material, overlying conductive material can be deposited on a smoother interface. By depositing on smoother interfaces, overall losses of the deposited material may be avoided, which improves the overall yield.

Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.

Abstract: An urban rail transportation fusion signaling system and method. The fusion signaling system includes: an autonomous train supervision system, configured to send a train operation plan; a first wayside management system, operating under a Train Autonomous Circumambulate System (TACS) system and configured to generate line resource allocation information according to the train operation plan; a second wayside management system, operating under a Commnunications-Based Train Control (CBTC) system and configured to generate operation permission information according to the train operation plan; and a car controller, provided on a rail transportation train and configured to: perform traffic control according to the line resource allocation information when the train is traveling under the TACS system; or perform traffic control according the operation permission information when the train is traveling under the CBTC system.

Abstract: A method includes forming a first high-k dielectric layer over a first semiconductor region, forming a second high-k dielectric layer over a second semiconductor region, forming a first metal layer comprising a first portion over the first high-k dielectric layer and a second portion over the second high-k dielectric layer, forming an etching mask over the second portion of the first metal layer, and etching the first portion of the first metal layer. The etching mask protects the second portion of the first metal layer. The etching mask is ashed using meta stable plasma. A second metal layer is then formed over the first high-k dielectric layer.

Abstract: The present disclosure relates to a rail transit signal system with multi-network integration, including: a wayside train control subsystem for simultaneously supporting mixed tracking operation of a China train control system (CTCS)-based national railway train and a communication based train control (CBTC)-based urban rail transit train; a compatible carbome subsystem for realizing cross-line operation of a national railway line network, an intercity railway network, a municipal railway network, and an urban rail transit network; a networked intelligent dispatching subsystem for realizing intelligent dispatching management of rail transit line networks and cooperation of line network operation plans between different rail transit line networks; an interlocking subsystem being respectively communicatively connected to and interacting with the wayside train control subsystem, the compatible carbome subsystem, and the networked intelligent dispatching subsystem; and a wireless train-ground communication subsys

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are described herein. A method includes forming a gate electrode, a gate electrode contact layer over the gate electrode, forming a dielectric layer over the gate electrode contact layer, and performing an etch through the dielectric layer, the etch forming an opening that exposes the gate electrode contact layer. The method further includes performing a post-etch treatment on the opening formed by the etch process by exposing the opening to a plasma. The method further includes forming gate electrode contacts in the openings after the post-etch treatment by a bottom-up deposition process.

Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.