Abstract: A method is provided and includes operations below: forming a multilayer stack, wherein the multilayer stack includes multiple first semiconductor layers and multiple second semiconductor layers that are alternately stacked; forming a first source region and a first drain region on opposing sides of a first portion of the multilayer stack and forming a second source region and a second drain region on opposing sides of a second portion of the multilayer stack; removing the second semiconductor layers in the multilayer stack; forming a first gate region, corresponding to a first transistor, over the first portion of the multilayer stack; forming a first insulating layer above the first gate region; and forming a second gate region, corresponding to a second transistor, above the first insulating layer and over the second portion of the multilayer stack.

Abstract: A sand-proof sprinkler mechanism has a base. A housing and a connecting platform are provided on the base. A hose is rotatably connected between the housing and the connecting platform. The housing has a water outlet, a housing inner chamber and a water inlet that are in communication with the hose. The housing includes an impeller transmission member and a transmission device that is drivingly connected to the impeller transmission member and the hose. The housing further has a sealing chamber for mounting the transmission device. A water baffle is provided at an opening of the sealing chamber for covering the sealing chamber. The above structure prevents particles from entering and getting stuck.

Abstract: Systems, devices, and methods for managing conductive connections for semiconductor devices are provided. In one aspect, a method includes: providing an integrated structure including an array structure in a first region and a conductive connection structure in a second region adjacent to the first region, at least one portion of at least one polysilicon layer being over the conductive connection structure; etching the at least one portion of the at least one polysilicon layer to expose one or more conductive connections in the conductive connection structure; depositing an isolating material over the array structure and the conductive connection structure; and forming conductive vertical interconnect accesses (VIAs) through the isolating material to be in contact with the one or more conductive connections and a conductive layer in the array structure.

Abstract: A magnetoresistive random access memory (MRAM) includes a first transistor and a second transistor on a substrate, a source line coupled to a first source/drain region of the first transistor, and a first metal interconnection coupled to a second source/drain region of the first transistor. Preferably, the first metal interconnection is extended to overlap the first transistor and the second transistor and the first metal interconnection further includes a first end coupled to the second source/drain region of the first transistor and a second end coupled to a magnetic tunneling junction (MTJ).

Abstract: The present disclosure provides a mixture-of-experts (MoE) model implementation method and system, an electronic device, and a storage medium, and relates to the field of artificial intelligence (AI) such as deep learning and distributed storage. The method includes: constructing a communication group, the communication group including a tensor-parallelism communication group, the tensor-parallelism communication group including at least two computing devices, tensor-parallelism segmentation being adopted for sparse parameters of each of the computing devices in a same tensor-parallelism communication group; and training an MoE model based on the communication group. By use of the solutions of the present disclosure, normal operation of model training can be guaranteed.

Abstract: A liquid storage tank may include a body with an inner cavity, wherein a first liquid storage area and a second liquid storage area are provided in the body, and a partition is provided between the first liquid storage area and the second liquid storage area. A heater for heating solution is provided in the first liquid storage area. A liquid outlet is provided in the second liquid storage area.

Abstract: A radar system includes an ultrasonic radar unit and a warning device. The ultrasonic radar unit is configured to be detachably mounted on a vehicle, and is configured to output a pairing signal when a pairing function is activated and output a warning signal upon detecting an object that is within a range. The warning device is configured to be electrically connected to the ultrasonic radar unit and to be mounted inside the vehicle. The warning device is configured to wirelessly communicate with the ultrasonic radar unit to receive the warning signal and the pairing signal; when receiving the pairing signal, couple the ultrasonic radar unit to one of a plurality of warning areas that is on the warning device according to the pairing signal; control one of the warning areas that is coupled to the ultrasonic radar unit to output a visual warning upon receiving the warning signal.

Abstract: A mechanical lock for building component connection includes a plug element (1) and a lock bod part (2). The plug element (1) includes a plug shell (10), a plug pin structure (11), and a plug transmission structure. The plug pin structure (11) is movably installed in the plug shell (10). The plug transmission structure is in transmission connection with the plug pin structure (11). An end of the plug pin structure (11) is provided with a stop part (110). The lock bod part (2) includes a lock body shell (20), a bracing structure (21), and a lock body transmission structure. An insertion channel (23) matched with the plug pin structure (11) is formed in the lock body shell (20). The lock body transmission structure is in transmission connection with the bracing structure (21).

Abstract: A pumping system includes an electric fracturing device and multiple power supply systems. The electric fracturing device includes a plunger pump, a main motor for driving the plunger pump, and at least one auxiliary electric device. The multiple power supply systems include at least one main power supply and at least one auxiliary power supply. The main power supply supplies electric power to the main motor, and the auxiliary power supply supplies electric power to the at least one auxiliary electric device.

Abstract: The present disclosure provides a display substrate, a manufacturing method thereof, and a display device. The display substrate includes a base substrate and a plurality of pixels arranged on the base substrate, each pixel includes a plurality of sub-pixels, and each sub-pixel includes a first active layer, a first gate insulation layer, a gate electrode, a second gate insulation layer, a second active layer, a first insulation layer, a source electrode and a drain electrode laminated one on another. The source electrode is connected with the first active layer through a via hole penetrating through the first insulation layer, the second gate insulation layer and the first gate insulation layer, and the source electrode and the drain electrode are connected with the second active layer through a via hole penetrating through the first insulation layer.

Abstract: A semiconductor device includes a semiconductor substrate with active regions and a first buried metal layer provided below the semiconductor substrate. The first buried metal layer includes a first buried conductive rail, a first set of buried conductive fingers that extends from the first buried conductive rail, and a second set of buried conductive fingers that are interleaved with the first set of buried conductive fingers. The first set and the second set of buried conductive fingers extends beneath more than one of the active regions. In this manner, the first set and the second set of buried conductive fingers can be utilized to distribute different voltages, such as an ungated reference voltage TVDD and a gated reference voltage VVDD in a header circuit with reduced resistance.

Abstract: Embodiments of the present disclosure relate to a permission setting method and apparatus, a device, and a medium. The method includes: displaying a permission customization control, in response to a trigger operation on a permission setting object of task information, the permission setting object including a first information object and/or a second information object, the second information object being subordinate to the first information object; displaying a permission editing interface, in response to a trigger operation on the permission customization control, and receiving customization permission information via the permission editing interface; and displaying the customization permission information corresponding to the permission setting object. Therefore, a hierarchy structure based on the task information satisfies a setting need for content-based permission customization, and improves a permission management efficiency.

Abstract: An electrically-driven fracturing system, which includes a main power generation device, a first auxiliary power generation device, a switch device, and an electrically-driven fracturing device; the electrically-driven fracturing device includes a fracturing motor and a fracturing auxiliary device; a rated generation power of the main power generation device is greater than that of the first auxiliary power generation device, a rated output voltage of the main power generation device is greater than that of the first auxiliary power generation device, the input end of the high-voltage switch group is connected to the main power generation device, the output end of the high-voltage switch group is connected to the fracturing motor, the input end of the low-voltage switch group is connected to the first auxiliary power generation device, and the output end of the low-voltage switch group is connected to the fracturing auxiliary device.

Abstract: The present disclosure relates to a method and an associated process tool. The method includes generating electromagnetic radiation that is directed toward a perimeter of a pair of bonded workpieces and toward a radiation sensor that is arranged behind the perimeter of the pair of bonded workpieces. The electromagnetic radiation is scanned along a vertical axis. An intensity of the electromagnetic radiation that impinges on the radiation sensor is measured throughout the scanning. Measuring the intensity includes recording a plurality of intensity values of the electromagnetic radiation at a plurality of different positions along the vertical axis extending past top and bottom surfaces of the pair of bonded workpieces. A position of an interface between the pair of bonded workpieces is determined based on a maximum measured intensity value of the plurality of intensity values.

Abstract: A method includes extracting, by an analysis computer, a plurality of first datasets from a plurality of graph snapshots using a structural self-attention module. The analysis computer can then extract at least a second dataset from the plurality of first datasets using a temporal self-attention module across the plurality of graph snapshots. The analysis computer can then perform graph context prediction with at least the second dataset.

Abstract: A method and an apparatus for obtaining an extended depth of field image, where the method includes: determining a target focal length range based on an initial focal length, where the target focal length range includes the initial focal length; obtaining a plurality of images of a photographed object for a plurality of focal lengths in the target focal length range; and registering and fusing the plurality of images to obtain an extended depth of field image. The target focal length range of concern to a user is selected based on the initial focal length, such that there is no need to obtain images of all focal lengths of a lens, a quantity of obtained images and processing time of registration and fusion can be reduced.

Abstract: A method for fabricating a semiconductor device includes the steps of first providing a substrate having a high electron mobility transistor (HEMT) region and a capacitor region, forming a buffer layer on the substrate, forming a mesa isolation on the HEMT region, forming a HEMT on the mesa isolation, and then forming a capacitor on the capacitor region. Preferably, a bottom electrode of the capacitor contacts the buffer layer directly.

Abstract: An all-in-one wafer cleaning machine for monocrystalline silicon production includes: a circulation track disposed at a rear end of a cleaning equipment main body and fixed to the cleaning equipment main body; a horizontal moving device disposed at an outer side of the circulation track; a first motor fixedly installed at one end inside the horizontal moving device; a first transmission gear disposed at an output end of the first motor; a first fixed rod fixedly disposed at the other end of the horizontal moving device; a first fixed gear disposed at one end of the first fixed rod, wherein the first transmission gear and the first fixed gear are engaged with the circulating track; and a vertical track fixedly disposed at the horizontal moving device.

Abstract: A communication system includes a contact lens element and a wearable device. The contact lens element has a communication function. The wearable device includes a transceiver circuit, a first metal structure, a second metal structure, and a reflector. The transceiver circuit includes a wireless communication circuit and a wireless charge circuit. The first metal structure is coupled to the wireless communication circuit. The first metal structure is configured to communicate with the contact lens element. The second metal structure is coupled to the wireless charge circuit. The second metal structure is configured to provide electric power for the contact lens element. The reflector is adjacent to the first metal structure and the second metal structure, so as to reflect radiation energy from the first metal structure and the second metal structure.

Abstract: Methods for fabricating semiconductor devices are provided. An exemplary method includes forming fins in a dense region and in an isolated region of a semiconductor substrate; performing a plasma dry etch process to remove a portion of at least one selected fin to form a first trench in the dense region and to remove a portion of at least one selected fin in the isolated region to form a second trench in the isolated region, wherein the plasma dry etch process includes: performing a passivation-oriented process and an etchant-oriented process; and controlling the passivation-oriented process and the etchant-oriented process to form the first trench with a desired first critical dimension and first depth and to form the second trench with a desired second critical dimension and second depth.