Patents by Inventor Lijie HUANG

Lijie HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120024054
    Abstract: With increasing demands on data communication and remote control in current industrial processes or gas measurement applications, development of new technologies would be necessary. The current invention presents a MEMS mass flow meter that are cost compatible with conventional variable area flow meters while providing all digital data process including accumulated flow rate measurements, user programmable flow rate alarm and flow data storage. These in-line meters provide packages in pipe diameter from 4 mm up to 100 mm. It is powered with battery and can be used as a stand-alone hand-held option. The meter is also equipped with the industrial standard RS485 Modbus communication interface for easy network and remote management.
    Type: Application
    Filed: July 30, 2010
    Publication date: February 2, 2012
    Applicant: Siargo Ltd.
    Inventors: Liji Huang, Kai Peng, Changming Jiang, Wenhong Deng, Chih-Chang Chen
  • Publication number: 20120011940
    Abstract: Nowadays many electronic devices, such as LCD projector, computer servers, and air fresher etc. require reliable air cooling system to reduce the risk of electronics damage caused by overheating. The present invention disclosed an apparatus integrated with air flow sensor as an alarm apparatus for air flow clog detection. The major prior approach for air flow circulation failure detection is based on an indirect measurement method of temperature monitoring on surrounding environments, which method is suffering from the slow response and poor identification of real-time situation. The present invention will demonstrate the advantages by directly monitoring air flow over by indirectly monitoring the surrounding temperature as for the purpose of preventing air flow path clog.
    Type: Application
    Filed: May 25, 2010
    Publication date: January 19, 2012
    Applicant: Siargo Ltd.
    Inventors: Liji Huang, Jian Luo, Changming Jiang, Yenan Liu, Wenhong Deng, Jialuo Jack Xuan, Chih-Chang Chen
  • Publication number: 20120001273
    Abstract: The current invention disclosed a micro-package design for packaging of micromachining liquid flow sensor. The package in present invention is fabricated with micromachining or micro-molding approach, which can greatly reduce the manufacturing cost due to the batch production. The micro-package design provides packaging solution for general micromachining liquid flow sensors that can enable various microfluidic applications while reaching the cost threshold for a disposable unit.
    Type: Application
    Filed: July 2, 2010
    Publication date: January 5, 2012
    Applicant: Siargo Ltd.
    Inventors: Chih-Chang Chen, Liji Huang
  • Publication number: 20110301765
    Abstract: An apparatus integrated with micromachined (a.k.a. MEMS, Micro Electro Mechanical Systems) silicon thermal sensor as a proximity switch sensor in air/oil Lubricators is disclosed in the present invention. The present invention relates to mass flow sensing and measurement for both gas and liquid phase and relates to air/oil lubrication process for multi-point lubrication machine. The invented apparatus is utilized as an alarm device to prevent mechanical system failures caused by the discontinuity of oil lubrication. The MEMS silicon thermal sensor is distinguished with a variety of advantages of small size, low power consumption, high reliability and high accuracy. In addition to the above benefits, the most significant and critical advantage is its fast response time of less than 20 msec, which makes the proximity switch control become viable for preventing equipment damage from oil lubricants discontinuity.
    Type: Application
    Filed: June 8, 2010
    Publication date: December 8, 2011
    Applicant: Siargo Ltd.
    Inventors: Liji Huang, Jiliang Ruan, Jian Luo, Chih-Chang Chen
  • Publication number: 20110283812
    Abstract: An apparatus integrated with micromachined (a.k.a. MEMS, Micro Electro Mechanical Systems) silicon sensor to measure air flow velocity on targeting correction for projectiles arms is disclosed in the present invention. The air flow velocity component perpendicular to the travel direction of bullets with respect to projectile arm body (e.g. bullets, shells, or arrows) has main effect to the targeting accuracy. Such effect is pretty much determined by the wind speed and the projectile travel distance. The integration with MEMS mass flow sensor has made the invented apparatus possible to be compact, low power consumption, low cost and high accuracy. The low power consumption characteristic of MEMS mass flow sensor is especially crucial for making the apparatus of present invention feasible by battery operated.
    Type: Application
    Filed: May 24, 2010
    Publication date: November 24, 2011
    Applicant: SIARGO LTD.
    Inventors: Liji Huang, Wei Ching, Chih-Chang Chen
  • Publication number: 20110283811
    Abstract: A wind or gas velocity profiler integrated with micromachined (a.k.a. MEMS, Micro Electro Mechanical Systems) silicon sensors in an open or enclosed space is disclosed in the present invention. There are three main embodiments disclosed in the present invention. Through the preambles of the independent claims, the advantages and merits of such measurement apparatus with MEMS flow sensor will be demonstrated as well. A silicon-based MEMS flow sensor can greatly reduce the sensor fabrication cost by a batch production. The integration with MEMS flow sensor makes the invented anemometer operate in the ways of better measurement accuracy, lower power consumption, higher reliability and a compact dimension compared to traditional anemometers such as cup anemometer, thermal anemometer and ultrasonic anemometer.
    Type: Application
    Filed: May 18, 2010
    Publication date: November 24, 2011
    Applicant: Siargo Ltd.
    Inventors: Liji Huang, Jialuo Jack Xuan, Chih-Chang Chen
  • Patent number: 7908096
    Abstract: An integrated mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or P-type silicon substrate with orientation <100>. This mass flow sensor comprises an upstream thin-film heater, an downstream thin-film heater, and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heaters and the sensors out of contact with the substrate base. This mass flow sensor is operated with three sets of circuits, a first circuit for measuring a flow rate in a first range of flow rates, a second circuit for measuring a flow rate in a second range of flow rates, and a third circuit in a differential configuration for measuring a flow rate in said first range of flow rates or said second range of flow rates, to significantly increase range of flow rate measurements and provide an optional for concentration measurement, while maintains a high degree of measurement accuracy.
    Type: Grant
    Filed: September 28, 2007
    Date of Patent: March 15, 2011
    Assignee: Siargo Ltd.
    Inventors: Gaofeng Wang, Chih-Chang Chen, Yahong Yao, Liji Huang
  • Publication number: 20110030468
    Abstract: The present invention is generally related to a novel micromachining thermal mass flow sensor and, more particularly, to a device incorporated with high strength and robust characteristics, which therefore is capable of operating under harsh environments. The new disclosed sensor is made of essential material which can provide robust physical structure and superior thermal properties to support the flow measuring operation. The invented thermal mass flow sensor is featuring with the advantages of micro-fabricated devices in terms of compact size, low power consumption, high accuracy and repeatability, wide dynamic range and easiness for mass production, which could avoid the drawbacks of fragility and vulnerability.
    Type: Application
    Filed: August 10, 2009
    Publication date: February 10, 2011
    Applicant: SIARGO, LTD.
    Inventors: Chih-Chang Chen, Gaofeng Wang, Liji Huang, Yahong Yao
  • Patent number: 7878056
    Abstract: The current invention generally relates to Micro Electro Mechanical Systems (MEMS) thermal mass flow sensors for measuring the flow rate of a flowing fluid (gas/liquid) and the methods of manufacturing on single crystal silicon wafers. The said mass flow sensors have self-cleaning capability that is achieved via the modulation of the cavity of which the sensing elements locate on the top of the cavity that is made of a silicon nitride film; alternatively the sensing elements are fabricated on top of a binary silicon nitride/conductive polycrystalline silicon film under which is a porous silicon layer selective formed in a silicon substrate. Using polycrystalline silicon or the sensing elements as electrodes, an acoustic wave can be generated across the porous silicon layer which is also used for the thermal isolation of the sensing elements.
    Type: Grant
    Filed: December 19, 2007
    Date of Patent: February 1, 2011
    Assignee: Siargo Ltd.
    Inventors: Liji Huang, Chih-Chang Chen, Yahong Yao, Gaofeng Wang
  • Patent number: 7797997
    Abstract: This invention discloses a mass flow sensor manufactured by applying the micro-electromechanical system (MEMS) process to provide a new and improved mass flow sensor that is a self-calibrated in a time-of-flight manner with configuration to measure the flow velocity directly. The self-calibration of a mass flow rate sensor is achieved by providing an electric pulse to a heater in the flow and determining a temperature variations of the fluid. The method further includes a step of measuring a temperature variation by a temperature sensor disposed at a short distance from the heater. The method further includes a step of correlating the temperature variation measured at the temperature sensor with the temperature variation of the heater to determine a time delay and a corresponding flow velocity.
    Type: Grant
    Filed: August 24, 2008
    Date of Patent: September 21, 2010
    Assignee: Siargo Inc.
    Inventors: Xiaozhong Wu, Liji Huang
  • Patent number: 7780343
    Abstract: A device with micromachined (a.k.a. MEMS, Micro Electro Mechanical Systems) silicon sensor to measure gas or liquid concentration in a binary mixture formality is disclosed in the present invention. A process for fabricating the said MEMS silicon concentration sensor, which thereby can greatly reduce the sensor fabrication cost by a batch production, is revealed as well. This MEMS process can mass-produce the sensors on silicon substrate in the ways of small size, low power, and high reliability. In addition to the gas or liquid concentration measurement, the present invention further discloses that the said sensor can also readily measure gas or liquid mass flow rate while record the concentration data, which is not viable by other related working principle.
    Type: Grant
    Filed: July 9, 2007
    Date of Patent: August 24, 2010
    Assignee: Siargo Ltd.
    Inventors: Chih-Chang Chen, Yahong Yao, Gaofeng Wang, Liji Huang
  • Patent number: 7765679
    Abstract: A mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or lightly doped P-type silicon substrate with orientation <100>. This mass flow sensor comprises a central thin-film heater and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heater and the sensors out of contact with the substrate base. The mass flow sensor is arranged for integration on a same silicon substrate to form a one-dimensional or two-dimensional array in order to expand the dynamic measurement range. For each sensor, the thermally isolated membrane is formed by a process that includes a step of first depositing dielectric thin-film layers over the substrate and then performing a backside etching process on a bulk silicon with TMAH or KOH or carrying out a dry plasma etch until the bottom dielectric thin-film layer is exposed.
    Type: Grant
    Filed: September 19, 2006
    Date of Patent: August 3, 2010
    Assignee: Siargo, Inc.
    Inventors: Yahong Yao, Chih-Chang Chen, Gafeng Wang, Liji Huang
  • Patent number: 7752910
    Abstract: A mass flow sensor is supported on an N or P-type silicon substrate with orientation <100>. This mass flow sensor comprises a central thin-film heater and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heater and the sensors out of contact with the substrate base. The mass flow sensor is arranged for integration on a same silicon substrate to form a one-dimensional or two-dimensional array in order to expand the dynamic measurement range.
    Type: Grant
    Filed: April 3, 2008
    Date of Patent: July 13, 2010
    Assignee: Siargo, Inc.
    Inventors: Gaofeng Wang, Chih-Chang Chen, Yahong Yao, Liji Huang
  • Publication number: 20090158859
    Abstract: The current invention generally relates to Micro Electro Mechanical Systems (MEMS) thermal mass flow sensors for measuring the flow rate of a flowing fluid (gas/liquid) and the methods of manufacturing on single crystal silicon wafers. The said mass flow sensors have self-cleaning capability that is achieved via the modulation of the cavity of which the sensing elements locate on the top of the cavity that is made of a silicon nitride film; alternatively the sensing elements are fabricated on top of a binary silicon nitride/conductive polycrystalline silicon film under which is a porous silicon layer selective formed in a silicon substrate. Using polycrystalline silicon or the sensing elements as electrodes, an acoustic wave can be generated across the porous silicon layer which is also used for the thermal isolation of the sensing elements.
    Type: Application
    Filed: December 19, 2007
    Publication date: June 25, 2009
    Applicant: SIARGO LTD.
    Inventors: Liji Huang, Chih-Chang Chen, Yahong Yao, Gaofeng Wang
  • Publication number: 20090164163
    Abstract: An integrated mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or P-type silicon substrate with orientation <100>. This mass flow sensor comprises an upstream thin-film heater, an downstream thin-film heater, and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heaters and the sensors out of contact with the substrate base. This mass flow sensor is operated with three sets of circuits, a first circuit for measuring a flow rate in a first range of flow rates, a second circuit for measuring a flow rate in a second range of flow rates, and a third circuit in a differential configuration for measuring a flow rate in said first range of flow rates or said second range of flow rates, to significantly increase range of flow rate measurements and provide an optional for concentration measurement, while maintains a high degree of measurement accuracy.
    Type: Application
    Filed: September 28, 2007
    Publication date: June 25, 2009
    Applicant: SIARGO LTD.
    Inventors: Gaofeng Wang, Chih-Chang Chen, Yahong Yao, Liji Huang
  • Patent number: 7536908
    Abstract: An integrated mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or P-type silicon substrate with orientation <100>. This mass flow sensor comprises a central thin-film heater and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heater and the sensors out of contact with the substrate base. The mass flow sensor is arranged for integration on a same silicon substrate to form a one-dimensional or two-dimensional array in order to expand the dynamic measurement range. For each sensor, the thermally isolated membrane is formed by a process that includes a step of first depositing dielectric thin-film layers over the substrate and then performing a backside etching process on a bulk silicon with TMAH or KOH or carrying out a dry plasma etch until the bottom dielectric thin-film layer is exposed.
    Type: Grant
    Filed: June 21, 2005
    Date of Patent: May 26, 2009
    Assignee: Siargo, Ltd.
    Inventors: Gaofeng Wang, Chih-Chang Chen, Yahong Yao, Liji Huang
  • Publication number: 20090049907
    Abstract: This invention discloses a mass flow sensor manufactured by applying the micro-electromechanical system (MEMS) process to provide a new and improved mass flow sensor that is a self-calibrated in a time-of-flight manner with configuration to measure the flow velocity directly. The self-calibration of a mass flow rate sensor is achieved by providing an electric pulse to a heater in the flow and determining a temperature variations of the fluid. The method further includes a step of measuring a temperature variation by a temperature sensor disposed at a short distance from the heater. The method further includes a step of correlating the temperature variation measured at the temperature sensor with the temperature variation of the heater to determine a time delay and a corresponding flow velocity.
    Type: Application
    Filed: August 24, 2008
    Publication date: February 26, 2009
    Inventors: Xiaozhong Wu, Liji Huang
  • Publication number: 20090016403
    Abstract: A device with micromachined (a.k.a. MEMS, Micro Electro Mechanical Systems) silicon sensor to measure gas or liquid concentration in a binary mixture formality is disclosed in the present invention. A process for fabricating the said MEMS silicon concentration sensor, which thereby can greatly reduce the sensor fabrication cost by a batch production, is revealed as well. This MEMS process can mass-produce the sensors on silicon substrate in the ways of small size, low power, and high reliability. In addition to the gas or liquid concentration measurement, the present invention further discloses that the said sensor can also readily measure gas or liquid mass flow rate while record the concentration data, which is not viable by other related working principle.
    Type: Application
    Filed: July 9, 2007
    Publication date: January 15, 2009
    Inventors: Chih-Chang Chen, Yahong Yao, Gaofeng Wang, Liji Huang
  • Publication number: 20080271525
    Abstract: A mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or lightly doped P-type silicon substrate with orientation <100>. This mass flow sensor comprises a central thin-film heater and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heater and the sensors out of contact with the substrate base. The mass flow sensor is arranged for integration on a same silicon substrate to form a one-dimensional or two-dimensional array in order to expand the dynamic measurement range. For each sensor, the thermally isolated membrane is formed by a process that includes a step of first depositing dielectric thin-film layers over the substrate and then performing a backside etching process on a bulk silicon with TMAH or KOH or carrying out a dry plasma etch until the bottom dielectric thin-film layer is exposed.
    Type: Application
    Filed: April 3, 2008
    Publication date: November 6, 2008
    Inventors: Gaofeng Wang, Chih-Chang Chen, Yahong Yao, Liji Huang
  • Publication number: 20070017285
    Abstract: An integrated mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or P-type silicon substrate with orientation <100>. This mass flow sensor comprises a central thin-film heater and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heater and the sensors out of contact with the substrate base. The mass flow sensor is arranged for integration on a same silicon substrate to form a one-dimensional or two-dimensional array in order to expand the dynamic measurement range. For each sensor, the thermally isolated membrane is formed by a process that includes a step of first depositing dielectric thin-film layers over the substrate and then performing a backside etching process on a bulk silicon with TMAH or KOH or carrying out a dry plasma etch until the bottom dielectric thin-film layer is exposed.
    Type: Application
    Filed: June 21, 2005
    Publication date: January 25, 2007
    Inventors: Gaofeng Wang, Chih-Chang Chen, Yahong Yao, Liji Huang