Abstract: A method for data radio bearer management, the method including: transmitting a data radio bearer (DRB) setup request message to a wireless communication node; receiving a DRB setup response message from the wireless communication node, determining at least one DRB and at least one Quality of Service (QoS) flow mapped to the at least one DRB supported by the wireless communication node; and configuring the wireless communication node to support the at least one DRB and the at least one QoS flow.

Abstract: The present disclosure provides an isolated recombinant oncolytic adenovirus, a pharmaceutical composition, and uses thereof for drugs for treatment of tumors and/or cancers. The recombinant oncolytic adenovirus is a selectively replicating oncolytic adenovirus, and the genome of the recombinant oncolytic adenovirus is integrated with a coding sequence of exogenous shRNA capable of inhibiting PDL1 expression in tumor cells. The replication capability of the virus in normal primary cells is much lower than the replication capability of the virus in tumor cells. Moreover, the expressed shPDL1 can significantly reduce the level of PDL1 protein highly expressed in tumor cells. Thus, the oncolytic killing effect of the oncolytic virus and the anti-tumor immunostimulatory effect of immune cells produce a synergistic effect.

Abstract: Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed on and/or in a silicon substrate. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer is on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair of doped regions in the germanium layer is configured as an e-lens of the germanium-based sensor.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first source/drain epitaxial feature, a second source/drain epitaxial feature disposed adjacent the first source/drain epitaxial feature, a first dielectric layer disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, a first dielectric spacer disposed under the first dielectric layer, and a second dielectric layer disposed under the first dielectric layer and in contact with the first dielectric spacer. The second dielectric layer and the first dielectric spacer include different materials.

Abstract: Disclosed are a new AXL-targeting monoclonal antibody and antibody-drug conjugate. Also disclosed is a method for preparing said antibody and antibody-drug conjugate. The AXL antibody of the present invention can bind with purified human AXL protein and multiple AXL on tumor cell surface with high effectiveness and high specificity. Said humanized antibody also has high affinity and low immunogenicity. Said AXL antibody-drug conjugate has markable performance against tumors having high AXL expression.

Abstract: The present disclosure provides a semiconductor structure, including a substrate having a front surface, a first semiconductor layer proximal to the front surface, a second semiconductor layer over the first semiconductor layer, a gate having a portion between the first semiconductor layer and the second semiconductor layer, a spacer between the first semiconductor layer and the second semiconductor layer, contacting the gate, and a source/drain (S/D) region, wherein the S/D region is in direct contact with a bottom surface of the second semiconductor layer, and the spacer has an upper surface interfacing with the second semiconductor layer, the upper surface including a first section proximal to the S/D region, a second section proximal to the gate, and a third section between the first section and the second section.

Abstract: Systems, apparatus and methods are provided for performing cache program operations in a non-volatile storage system. A method may comprise issuing a first cache program operation from a storage controller to a non-volatile storage device to write data to a first regular block, writing the data to the first regular block and a copy of the data to a backup block, determining that a program error has occurred while writing the data to the first regular block, asserting the program error to the storage controller, retrieving a mapping between the first regular block and the backup block, issuing a read operation to read the copy of the data from the backup block, reading the copy of the data from the backup block and issuing a second cache program operation to write the data to a second regular block and marking the first regular block as defective.

Abstract: Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary semiconductor structure according to the present disclosure includes a substrate having a p-type well or an n-type well, a first base portion over the p-type well, a second base portion over the n-type well, a first plurality of channel members over the first base portion, a second plurality of channel members over the second base portion, an isolation feature disposed between the first base portion and the second base portion, and a deep isolation structure in the substrate disposed below the isolation feature.

Abstract: A semiconductor package includes a lead frame, a low side field-effect transistor (FET), a high side FET, a metal clip, and a molding encapsulation. The low side FET is flipped and is attached to a first die paddle of the lead frame. The lead frame comprises one or more voltage input (Vin) leads; a gate lead; one or more switching node (Lx) leads; a first die paddle; a second die paddle; and an end paddle. Each of an exposed bottom surface of the one or more Lx leads is directly connected to an exposed bottom surface of the end paddle. A longitudinal direction of an exposed bottom surface of the gate lead is perpendicular to a longitudinal direction of each of the exposed bottom surface of the one or more Lx leads. An entirely of each of the one or more Vin leads is of the full thickness.

Abstract: A color correction system and a colorimeter positioning method therefore are provided. A first color block is displayed in a first display area of a display. During the period of displaying the first color block, a first sensing value is acquired for the first color block through a sensor of a colorimeter. The first sensing value is compared with a first reference value to determine whether the first sensing value meets the first specific condition. In response to the first sensing value meeting the first specific condition, a second color block is displayed in the first display area of the display. During the period of displaying the second color block, a second sensing value is acquired for the second color block through the sensor. The second sensing value is compared with a second reference value to determine whether the second sensing value meets the second specific condition.

Abstract: Systems, apparatus and methods are provided for determining an optimal performance profile and a predicted temperature. A method may include receiving a command from a host. The command may contain a logical block address (LBA) for data stored in a data storage system, a length for a data size associated with the command, and a timestamp associated with the command. The method may further include obtaining LBA information, the timestamp, the data size from the command, providing the LBA information, the timestamp, the data size, along with temperature readings, and a performance profile as inputs to a machine learning model, determining an optimal performance profile and a predicted temperature using the machine learning model and configuring a storage controller with settings of the optimal performance profile.

Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.

Abstract: An image sensor structure includes a semiconductor substrate, a plurality of image sensing elements, a reflective element, and a high-k dielectric structure. The image sensing elements are in the semiconductor substrate. The reflective element is in the semiconductor substrate and between the image sensing elements. The high-k dielectric structure is between the reflective element and the image sensing elements.

Abstract: Systems, apparatus and methods are provided for managing a removable solid state storage system for data loss prevention. A method may include maintaining a standby mode for a timer of the removable solid state storage system until the removable solid state storage system is disconnected from an external power supply, setting an operation time interval on the timer, using the timer to count how long the removable solid state storage system has been disconnected, sending an interrupt to a storage controller of the removable solid state storage system from the timer when the timer counts to the operation time Interval, and performing data loss prevention operations using a power supplied by a removable battery.

Abstract: Systems, apparatus and methods are provided for low temperature management of a storage system. An apparatus may include a temperature sensor to generate a temperature reading, a timer configured with a time interval, a backup battery, one or more non-volatile memory (NVM) devices and a storage controller. The storage controller may be configured to: maintain a standby mode for low temperature management until a host electronic system has been turned off, start the timer and check the temperature reading when the host electronic system is turned off, determine that the temperature reading is below a temperature threshold, set the time interval based on the temperature reading, receive an interrupt from the timer when the timer counts to the time Interval, and perform low-temperature management operations for data stored in the one or more NVM devices using power supplied by the backup battery.

Abstract: A method for generating and outputting a message is implemented using an electronic device the stores a computer program product and a text database. The text database includes a main message template, a template text that includes a placeholder, and a word group that includes a plurality of preset words for replacing the placeholder. The method includes: in response to receipt of a command for execution of the computer program product, displaying an editing interface including the main message template; in response to receipt of user operation of a selection of the main message template, displaying the template text; in response to receipt of user operation of a selection of one of the preset words via the user interface, generating an edited text by replacing the placeholder with the one of the preset words in the template text; and outputting the edited text as a message.

Abstract: Sidelink based relay communications include communications through a relay user equipment (“UE”) between a basestation and a remote UE. Relay communications can be improved by addressing incompatibilities between different devices, which support different features/operations, such as the layers of communication. Access control and an establishment cause value can also be addressed by the relay communications. Paging identification and system information can be communicated by relay communications, such as through the relay UE to improve communications.

Abstract: A ventilation fan includes a housing having an opening, a grille structure positioned to cover the opening, a fan module provided in the housing and a function module. The grille structure includes a base defining an outlet, and a grille support spaced apart from the base and connected by the connecting columns A radial inlet is formed between the base and the grille support is in communication with the outlet. The base includes a holder having a holding opening axially downward and faced away from the housing. The function module is disposed within the holder through the holding opening.

Abstract: Provided is a method for performing relay forwarding on integrated access and backhaul (IAB) links. The method includes receiving, by a first IAB node, a data packet; and transmitting, by the first IAB node, the data packet to an IAB donor. Further provided are an information acquisition method, an IAB node, an IAB donor node and a storage medium.

Abstract: Aspects of the present disclosure provide a method for training a predictor that predicts performance of a plurality of machine learning (ML) models on platforms. For example, the method can include converting each of the ML models into a plurality of instructions or the instructions and a plurality of intermediate representations (IRs). The method can also include simulating execution of the instructions corresponding to each of the ML models on a platform and generating instruction performance reports. Each of the instruction performance reports can be associated with performance of the instructions corresponding to one of the ML models that are executed on the platform. The method can also include training the predictor with the instructions or the IRs as learning features and the instruction performance reports as learning labels, compiling the predictor into a library file, and storing the library file in a storage device.