Abstract: Introduced here are different variations of an edge-cloud collaboration framework (also called an “ECC framework”) that learns models with different levels of tradeoffs between the aforementioned objectives that tend to conflict with one another. This ECC framework—based on an adaptation of knowledge from “edge models” employed by edge devices to “cloud models” employed by a computer server system—can attempt to minimize the communication and computation costs during the inference stage while also trying to achieve the best performance possible.

Abstract: Systems, apparatus and methods are provided for performing cache program operations in a non-volatile storage system. A method may comprise issuing a first cache program operation from a storage controller to a non-volatile storage device to write data to a first regular block, writing the data to the first regular block and a copy of the data to a backup block, determining that a program error has occurred while writing the data to the first regular block, asserting the program error to the storage controller, retrieving a mapping between the first regular block and the backup block, issuing a read operation to read the copy of the data from the backup block, reading the copy of the data from the backup block and issuing a second cache program operation to write the data to a second regular block and marking the first regular block as defective.

Abstract: A carrier assembly for mounting equipment into a carrier slot includes an electro-magnetic interference (EMI) shield and an EMI finger. The EMI shield protects the mounted equipment from EMI. The EMI shield is formed in a first plane of the carrier assembly. The EMI finger protrudes from the EMI shield and is coupled to the EMI shield. The EMI finger is formed in a second plane perpendicular to the first plane. The EMI finger operates, when the carrier assembly is installed into the carrier slot, to couple the EMI shield to the carrier slot. The EMI finger, when viewed from a first direction that is perpendicular to both the first plane and the second plane, is formed in a tear-drop shape.

Abstract: A method and structure providing an optical sensor having an optimized Ge—Si interface includes providing a substrate having a pixel region and a logic region. In some embodiments, the method further includes forming a trench within the pixel region. In various examples, and after forming the trench, the method further includes forming a doped semiconductor layer along sidewalls and along a bottom surface of the trench. In some embodiments, the method further includes forming a germanium layer within the trench and over the doped semiconductor layer. In some examples, and after forming the germanium layer, the method further includes forming an optical sensor within the germanium layer.

Abstract: A clamping appliance of a reticle inner pod comprises: two clamping seats and a power member. The two clamping seats face each other in a width direction. The power member adjusts a distance of the two clamping seats in the width direction. The two clamping seats each include a bottom wall, two side walls, a first step and a second step. The two side walls are respectively disposed at two ends of the bottom wall. The first step and the second step are sequentially arranged above the bottom wall along the width direction. The two clamping seats each further include two eaves, the two eaves are respectively perpendicularly connected to the two side walls, so that the eave, the side wall and the bottom wall are clamped to form a cladding space with three-sided cladding.

Abstract: A neutron capture therapy system is provided, which may prevent a material of a beam shaping assembly from deformation and damaged, and improve the flux and quality of neutron sources. A boron neutron capture therapy system (100) includes a neutron generating device (10) and a beam shaping assembly (20). The neutron generating device (10) includes an accelerator (11) and a target (T). A charged particle beam (P) generated by acceleration of the accelerator (11) acts with the target (T) to generate neutrons. The neutrons form a neutron beam (N). The neutron beam (N) defines a main axis (X). The beam shaping assembly (20) includes a support part (21) and a main part (23) filled within the support part (21).

Abstract: A power semiconductor package comprises a lead frame, a semiconductor chip, and a molding encapsulation. The lead frame comprises an elevated section comprising a source section; a drain section; and a plurality of leads. The semiconductor chip includes a metal-oxide-semiconductor field-effect transistor (MOSFET) disposed over the lead frame. The semiconductor chip comprises a source electrode, a drain electrode, and a gate electrode. The source electrode of the semiconductor chip is electrically and mechanically connected to the source section of the elevated section of the lead frame. The semiconductor chip is served as a low side field-effect transistor as a flipped-chip connected to a heat sink by a first thermal interface material. A high side field-effect transistor is connected to the heat sink by a second thermal interface material. The low side field-effect transistor and the high side field-effect transistor are mounted on a printed circuit board.

Abstract: Reducing blinking pixels in a display includes detecting a first timing of activation of one or more emissive elements of the display, detecting a second timing of sensing pulses from a sensor arranged to detect radiation transmitted through the display, determining, based on the first timing and the second timing, a synchronized timing that staggers the activation of the one or more emissive elements of the display and the sensing pulses from the sensor, and dynamically altering, based on the determined synchronized timing, a subsequent timing of the sensing pulses from the sensor to reduce blinking of at least some of the pixels compared to blinking associated with the synchronized timing.

Abstract: The present disclosure provides a semiconductor structure, including a substrate having a front surface, a first semiconductor layer proximal to the front surface, a second semiconductor layer over the first semiconductor layer, a gate having a portion between the first semiconductor layer and the second semiconductor layer, a spacer between the first semiconductor layer and the second semiconductor layer, contacting the gate, and a source/drain (S/D) region, wherein the S/D region is in direct contact with a bottom surface of the second semiconductor layer, and the spacer has an upper surface interfacing with the second semiconductor layer, the upper surface including a first section proximal to the S/D region, a second section proximal to the gate, and a third section between the first section and the second section.

Abstract: A current transmission assembly and a current transmission system are provided. The current transmission system includes the current transmission assembly and a circuit board structure. The current transmission assembly includes a pluggable component, at least one conductor component, and at least one electrically connecting component. The pluggable component includes a housing, at least one set of electrically conductive arms, and at least one connecting member. The at least one sets of electrically conductive arms is disposed inside the housing. The at least one conductor component includes an electrical insulator and a wire main body. The electrical insulator encircles the wire main body, so that a first terminal and a second terminal are exposed from the wire main body, and the first terminal is connected to the at least one two connecting member.

Abstract: A semiconductor structure includes a first stack of active channel layers and a second stack of active channel layers disposed over a semiconductor substrate, where the second stacking include a dummy channel layer and the first stack is free of any dummy channel layer, a gate structure engaged with the first stack and the second stack, and first S/D features disposed adjacent to the first stack and second S/D features disposed adjacent to the second stack, where the second S/D features overlap with the dummy channel layer.

Abstract: A monitoring and alerting method for a liquid-cooling system includes monitoring a thermal resistance variation of a cold plate of the liquid-cooling system and sending an alert related to the thermal resistance variation. Furthermore, a liquid-cooling system and an electronic device including the same are provided. The liquid-cooling system includes a liquid-cooling module including a cold plate; and a monitoring and alerting module including a control unit, an inlet thermometer in communication with the control unit for measuring a temperature of a liquid inlet of the cold plate, and a heat source thermometer in communication with the control unit for measuring a temperature of a heat source in thermal contact with the cold plate. The control unit produces an alert according to a thermal resistance variation calculated by the inlet thermometer, the heat source thermometer, and a power of the heat source.

Abstract: Presented are systems and methods related to radio resource control (RRC) message delivery. In some embodiments, a first integrated access and backhaul (IAB) entity sends to a second IAB entity a message related to RRC message delivery. The first IAB entity can comprise an IAB node or IAB donor DU. The second IAB entity can comprise an IAB donor. The message can comprise a RRC message delivery status to indicate that a buffered RRC message is discarded at the LAB node or IAB donor DU. In some embodiments, the RRC message delivery status includes an identifier of the RRC message which triggers the RRC message delivery status.

Abstract: Presented are systems and methods for transferring configuration information. A first integrated access and backhaul (IAB) donor may send an Xn application protocol (XnAP) message to a second IAB donor. The XnAP message may be to transfer an updated information of an IAB distributed unit (IAB-DU) to the second IAB donor.

Abstract: A method of wireless communication includes transmitting, from a source communication node, a first message to a target communication node requesting a hand-over procedure for handing over one or more mobile devices from the source communication node to the target communication node. The first message indicates a traffic pattern or group information of the one or more mobile devices. The method also includes receiving, by the source communication node, a second message from the target communication node in response to the first message.

Abstract: The present disclosure provides a voltage monitor and a semiconductor device including the voltage monitor. The voltage monitor includes a first voltage-to-digital converter (VDC), a second VDC, a first digital-to-binary converter (DBC), a second DBC, and an adder. The first VDC is configured to generate a first digital signal in response to a clock signal, and the second VDC is configured to generate a second digital signal in response to the clock signal. The first DBC is connected to the first VDC, and configured to convert the first digital signal to a first binary signal. The second DBC is connected to the second VDC, and configured to convert the second digital signal to a second binary signal. The adder is connected to the first DBC and the second DBC, and configured to combine the first binary signal and the second binary signal into an output signal.

Abstract: A chip includes a first circuit under test, a second circuit under test, and a clock masking circuit. The first circuit under test is coupled to the second circuit under test. The clock masking circuit includes a first clock control circuit, a second clock control circuit, and an enabling circuit. The first clock control circuit is configured to provide a first clock signal for the first circuit under test according to a first enable signal and an initial clock signal. The second clock control circuit is configured to provide a second clock signal for the second circuit under test according to a second enable signal and the initial clock signal. The enabling circuit is configured to provide a first enable signal for the first clock control circuit and a second enable signal for the second clock control circuit.

Abstract: A modified maleimide resin is provided. The modified maleimide resin is formed from a dicyclopentadiene (DCPD)-based resin having an amino group and a maleic anhydride by a condensation polymerization. The dicyclopentadiene-based resin having an amino group is formed by nitration and hydrogenation of dicyclopentadiene phenolic resin.

Abstract: A modified bismaleimide resin is provided. The modified bismaleimide resin is formed from a fluorine-based diamine and a maleic anhydride by a condensation polymerization. The fluorine-based diamine includes a fluorine group, a fluorine-containing substituent or a combination thereof, and further includes an arylene group, an ether group, an alkylene group, an amide group or a combination thereof.

Abstract: Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary semiconductor structure according to the present disclosure includes a first base portion and a second base portion, an isolation feature sandwiched between the first base portion and the second base portion, a center dielectric fin over the isolation feature, a first anti-punch-through (APT) feature over the first base portion, a second APT feature over the second base portion, a first stack of channel members over the first APT feature, and a second stack of channel members over the second APT feature. The center dielectric fin is sandwiched between the first stack of channel members and the second stack of channel members as well as between the first APT feature and the second APT feature.