Patents by Inventor Lin Peng

Lin Peng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12281252
    Abstract: A biological water retention material, a method for preparing the same and a use thereof. A Bacillus subtilis, named as Bacillus subtilis GE1, which has been deposited in China General Microbiological Culture Collection, Institute of Microbiology, Chinese Academy of Sciences on Jan. 7, 2016, with a deposit number of CGMCC No. 11964, solves the problem of lacking a biological water retention material that fully combines water retention materials with microbial agents to increase the survival rate of silviculture under drought conditions by increasing soil moisture content as well as enhancing the drought resistance of plants. It is suitable for use under drought and water shortage conditions, and can fully utilize the coupling effect of water retention and bacterial agents, increasing the survival rate of silviculture under drought conditions and promoting seedling growth by increasing soil moisture content as well as enhancing the drought resistance of plants.
    Type: Grant
    Filed: October 13, 2022
    Date of Patent: April 22, 2025
    Assignees: SHANDONG ACADEMY OF FORESTRY, WEIFANG HUAWEI MATERIALS TECHNOLOGY CO., LTD.
    Inventors: Fangchun Liu, Honghai Han, Hailin Ma, Xiaokai Wang, Xiujuan Zhao, Lin Peng, Binghua Liu, Xinghong Liu
  • Patent number: 12281369
    Abstract: The present invention discloses a extra thick hot rolled H section steel and a production method therefor. The extra thick hot rolled H section steel contains, by mass, the following chemical components: 0.04-0.11% of C, 0.10-0.40% of Si, 0.40-1.00% of Mn, 0.40-1.00% of Cr, 0.10-0.40% of Cu, 0.020-0.060% of Nb, 0.040-0.100% of V, 0.010-0.025% of Ti, 0.010-0.030% of Al, 0.0060-0.0120% of N, not more than 0.015% of P, not more than 0.005% of S, not more than 0.0060% of O, and the balance Fe and trace residual elements, wherein 0.090%?Nb+V+Ti?0.170%, 6.5?(V+Ti)/N?10.5, and 0.30%?CEV?0.48%. The extra thick hot rolled H section steel has a flange thickness of 90 mm-150 mm, has excellent comprehensive mechanical properties, and can well meet the needs for heavy supporting structural parts of high-rise buildings, large squares, bridge structures, etc.
    Type: Grant
    Filed: October 27, 2021
    Date of Patent: April 22, 2025
    Assignee: MAANSHAN IRON & STEEL CO., LTD.
    Inventors: Meng Xia, Baoqiao Wu, Meizhuang Wu, Jun Xing, Jie Wang, Hui Chen, Jingcheng Yan, Qi Huang, Lin Peng, Junwei He, Zhaohui Ding, Qiancheng Shen
  • Publication number: 20250048530
    Abstract: Disclosed is an electronic assembly that includes a heat sink with a groove that is cut on a surface of the heat sink. A thermal interface material is disposed between the heat sink and an electronic device. A compressible filler disposed in the groove surrounds and confines the thermal interface material.
    Type: Application
    Filed: August 4, 2023
    Publication date: February 6, 2025
    Inventors: Yi-Kuan LIAO, Kuan-Lin PENG
  • Publication number: 20240413277
    Abstract: A micro light-emitting device includes an epitaxial structure, a first electrode, a second electrode, a first contact layer and a diffusion structure. The epitaxial structure includes a first-type semiconductor layer, an active layer and a second-type semiconductor layer stacked in sequence. The second-type semiconductor layer has an outer surface relatively away from the first-type semiconductor layer. The first and second electrodes are respectively disposed on the epitaxial structure and electrically connected to the first-type and the second-type semiconductor layers. The first contact layer is disposed between the first electrode and the first-type semiconductor layer. The diffusion structure is disposed on a side of the second-type semiconductor layer away from the first-type semiconductor layer. A conductivity of the diffusion structure is less than that of the second-type semiconductor layer.
    Type: Application
    Filed: July 17, 2023
    Publication date: December 12, 2024
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: BOON KHOON TEE, You-Lin Peng, Chee-Yun Low, Wan-Jung Peng, Pai-Yang Tsai, Ching-Liang Lin, Fei-Hong Chen
  • Publication number: 20240395801
    Abstract: An integrated circuit includes a diode string, a first transistor, a second transistor, and a third transistor. The diode string is coupled between a first reference voltage pin and an input/output (I/O) pad. A first terminal of the second transistor is coupled to a first node, and a gate terminal of the second transistor is coupled to a second reference voltage pin. In response to a voltage at the first terminal of the second transistor being higher than a voltage at the gate terminal of the second transistor, the second transistor is configured to turn on the third transistor, and the third transistor is configured to transmit a voltage received from the first reference voltage pin to a gate terminal of the first transistor.
    Type: Application
    Filed: July 31, 2024
    Publication date: November 28, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Po-Lin PENG, Yu-Ti SU
  • Publication number: 20240387512
    Abstract: An IC device includes a first power terminal, an IO pad, a first ESD protection device coupled between the first power terminal and IO pad, a first trigger current source device coupled between the first power terminal and the IO pad, and a substrate over which the first ESD protection device and first trigger current source device are formed. The first ESD protection device includes a parasitic BJT having a collector and an emitter coupled between the IO pad and first power terminal, and a base coupled via a substrate resistance to a well tap coupled to the first power terminal. The first trigger current source device, in response to an ESD voltage on the IO pad, becomes conductive and causes discharge of the ESD voltage through the first ESD protection device to the first power terminal.
    Type: Application
    Filed: July 31, 2024
    Publication date: November 21, 2024
    Inventors: Po-Lin PENG, Yu-Ti SU
  • Publication number: 20240381585
    Abstract: An immersion cooling system includes a tank that contains a dielectric coolant. A main pump circulates the dielectric coolant through the tank and a heat exchanger. Electronic devices are submerged in the dielectric coolant in the tank. An electronic device includes a substrate, an electronic component that is mounted on the substrate, a heat sink that is attached to the electronic component, and a forced convection device that directs the dielectric coolant from within a housing of the electronic device toward the heat sink.
    Type: Application
    Filed: May 9, 2023
    Publication date: November 14, 2024
    Inventors: Yi-Kuan LIAO, Kuan-Lin PENG
  • Publication number: 20240369882
    Abstract: The present disclosure provides a pixel unit, a display substrate, a display panel, and a display device. The pixel unit includes a slit electrode having a slit. The pixel unit includes at least two sub-pixels corresponding to different colors, each of the pixels includes n domain areas arranged along a first direction, n is a positive integer greater than or equal to 2, extension directions of the slits of the slit electrodes in any two adjacent domain areas in the n domain areas of the pixel unit are different, an acute angle between an extension direction of the slit in each domain area and a second direction is a predetermined angle, the predetermined angle is greater than or equal to 30° and less than 45°, and the second direction intersects with the first direction.
    Type: Application
    Filed: April 29, 2022
    Publication date: November 7, 2024
    Applicants: CHENGDU BOE DISPLAY SCI-TECH CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Fan Li, Lin Peng, Kambe Makoto, Yong Zhang, Panqiang Wu, Congcong Liu, Ju Ren, Lin Li
  • Publication number: 20240369883
    Abstract: The present disclosure provides a display panel, a manufacturing method and a display device. The display panel includes a first substrate, a second substrate and liquid crystal molecules. Each sub-pixel includes n domains, and at least two of the n domains are arranged in a first direction. An alignment film is arranged on one or both of the first substrate and the second substrate and provided with alignment directions, and/or slit electrodes each with a slit are arranged on one or both of the first substrate and the second substrate. The alignment directions in at least two adjacent domains in the n domains are different and/or extension directions of the slits in any two adjacent domains are different, so that the liquid crystal molecules in different domains are provided with different pretilt angles.
    Type: Application
    Filed: April 29, 2022
    Publication date: November 7, 2024
    Applicants: Chengdu BOE Display Sci-tech Co., Ltd., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Fan LI, Kambe MAKOTO, Yong ZHANG, Lin PENG, Panqiang WU, Congcong LIU, Ju REN, Jian HAN, Jing LI, Haiwei DENG, Zhigang WANG, Lin LI
  • Patent number: 12136968
    Abstract: Provided are a positioning method, device and system for a transmitting device, and a storage medium and an electronic device. The method includes that: control information is determined by a receiving device, wherein the control information includes temporal information and control direction information, and the control direction information is used for instructing a meta-surface control unit to adjust a reflection coefficient of a meta-surface to a target reflection coefficient corresponding to a preset direction within a target time period; a pilot signal is transmitted to the meta-surface by a transmitting device; the control information is sent to the meta-surface control unit by the receiving device; and a signal measurement result corresponding to the preset direction is determined, and the transmitting device is positioned according to the preset direction and the signal measurement result.
    Type: Grant
    Filed: May 12, 2021
    Date of Patent: November 5, 2024
    Assignee: ZTE CORPORATION
    Inventors: Jianwu Dou, Min Fang, Yijian Chen, Nan Zhang, Lin Peng
  • Publication number: 20240347531
    Abstract: An electrostatic discharge (ESD) protection device having a source region coupled to a first electrical node, a first drain region coupled to a second electrical node different from the first electrical node, and an extended drain region between the source region and the first drain region. The extended drain region includes a number N of electrically floating doped regions and a number M of gate regions coupled to the second electrical node, where N and M are integers greater than 1 and N is equal to M. Each electrically floating doped region of the N number of floating doped regions alternates with each gate region of the M number of gate regions.
    Type: Application
    Filed: June 27, 2024
    Publication date: October 17, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Po-Lin PENG, Han-Jen YANG, Jam-Wem LEE, Li-Wei CHU
  • Patent number: 12094871
    Abstract: An integrated circuit includes a diode string, a first transistor, a second transistor, and a third transistor. The diode string is coupled between a first reference voltage pin and an input/output (I/O) pad. A first terminal of the second transistor is coupled to a first node, and a gate terminal of the second transistor is coupled to a second reference voltage pin. In response to a voltage at the first terminal of the second transistor being higher than a voltage at the gate terminal of the second transistor, the second transistor is configured to turn on the third transistor, and the third transistor is configured to transmit a voltage received from the first reference voltage pin to a gate terminal of the first transistor.
    Type: Grant
    Filed: March 28, 2022
    Date of Patent: September 17, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Po-Lin Peng, Yu-Ti Su
  • Publication number: 20240263075
    Abstract: A biological water retention material, a method for preparing the same and a use thereof. A Bacillus subtilis, named as Bacillus subtilis GE1, which has been deposited in China General Microbiological Culture Collection, Institute of Microbiology, Chinese Academy of Sciences on Jan. 7, 2016, with a deposit number of CGMCC No. 11964, solves the problem of lacking a biological water retention material that fully combines water retention materials with microbial agents to increase the survival rate of silviculture under drought conditions by increasing soil moisture content as well as enhancing the drought resistance of plants. It is suitable for use under drought and water shortage conditions, and can fully utilize the coupling effect of water retention and bacterial agents, increasing the survival rate of silviculture under drought conditions and promoting seedling growth by increasing soil moisture content as well as enhancing the drought resistance of plants.
    Type: Application
    Filed: October 13, 2022
    Publication date: August 8, 2024
    Applicants: SHANDONG ACADEMY OF FORESTRY, WEIFANG HUAWEI MATERIALS TECHNOLOGY CO., LTD.
    Inventors: Fangchun LIU, Honghai HAN, Hailin MA, Xiaokai WANG, Xiujuan ZHAO, Lin PENG, Binghua LIU, Xinghong LIU
  • Patent number: 12051896
    Abstract: A device is disclosed herein. The device includes a bias generator, an ESD driver, and a logic circuit. The bias generator includes a first transistor. The ESD driver includes a second transistor and a third transistor coupled to each other in series. The logic circuit is configured to generate a logic control signal. When the first transistor is turned on by a detection signal, the first transistor is turned off.
    Type: Grant
    Filed: May 24, 2023
    Date of Patent: July 30, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Po-Lin Peng, Yu-Ti Su, Chia-Wei Hsu, Ming-Fu Tsai, Shu-Yu Su, Li-Wei Chu, Jam-Wem Lee, Chia-Jung Chang, Hsiang-Hui Cheng
  • Patent number: 12051691
    Abstract: An electrostatic discharge (ESD) protection device having a source region coupled to a first electrical node, a first drain region coupled to a second electrical node different from the first electrical node, and an extended drain region between the source region and the first drain region. The extended drain region includes a number N of electrically floating doped regions and a number M of gate regions coupled to the second electrical node, where N and M are integers greater than 1 and N is equal to M. Each electrically floating doped region of the N number of floating doped regions alternates with each gate region of the M number of gate regions.
    Type: Grant
    Filed: September 14, 2020
    Date of Patent: July 30, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Po-Lin Peng, Han-Jen Yang, Jam-Wem Lee, Li-Wei Chu
  • Publication number: 20240238312
    Abstract: The invention provides biodegradable implants sized for implantation in an ocular region and methods for treating medical conditions of the eye. The implants are formed from a mixture of hydrophilic end and hydrophobic end PLGA, and deliver active agents into an ocular region without a high burst release.
    Type: Application
    Filed: March 20, 2024
    Publication date: July 18, 2024
    Inventors: Jane-Guo Shiah, Rahul Bhagat, Wendy M. Blanda, Thierry Nivaggioli, Lin Peng, David Chou, David A. Weber
  • Publication number: 20240222363
    Abstract: A semiconductor device includes a first diode, a second diode, a clamp circuit and a third diode. The first diode is coupled between an input/output (I/O) pad and a first voltage terminal. The second diode is coupled with the first diode, the I/O pad and a second voltage terminal. The clamp circuit is coupled between the first voltage terminal and the second voltage terminal. The second diode and the clamp circuit are configured to direct a first part of an electrostatic discharge (ESD) current flowing between the I/O pad and the first voltage terminal. The third diode, coupled to the first voltage terminal, and the second diode include a first semiconductor structure configured to direct a second part of the ESD current flowing between the I/O pad and the first voltage terminal.
    Type: Application
    Filed: March 14, 2024
    Publication date: July 4, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Po-Lin PENG, Li-Wei CHU, Ming-Fu TSAI, Jam-Wem LEE, Yu-Ti SU
  • Publication number: 20240223913
    Abstract: An image acquisition device includes an optical sensor and a dimmer. The optical sensor includes a photosensitive area configured to convert optical signal into image signal. The dimmer is on a side of the optical sensor that receives the optical signal. The dimmer completely covers the photosensitive area. The dimmer is configured for modulating intensity of the optical signal projected onto the optical sensor. The dimmer includes dimming blocks. Each dimming block is configured for modulating intensity of light projected onto a portion of the photosensitive area. An electronic device and an image acquisition method are also provided.
    Type: Application
    Filed: July 24, 2023
    Publication date: July 4, 2024
    Inventors: MING-HSUN LEE, YEN-LIN PENG
  • Patent number: D1051133
    Type: Grant
    Filed: December 13, 2023
    Date of Patent: November 12, 2024
    Inventor: Lin Peng
  • Patent number: D1059905
    Type: Grant
    Filed: May 16, 2024
    Date of Patent: February 4, 2025
    Inventor: Lin Peng