Abstract: An anti-fuse structure includes a substrate, an active layer, an electrode layer, and a dielectric layer. The active layer is on the substrate and has a body portion and a convex portion protruding from the body portion. The electrode layer is on the active layer and partially overlaps the convex portion of the active layer. The electrode layer has a hollow region, and the convex portion of the active layer is in the hollow region. The dielectric layer is between the active layer and the electrode layer.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device. The method includes steps of providing a first wafer including a first substrate and a plurality of first conductors over the first substrate; forming a first interconnect structure penetrating through the first substrate and contacting one of the first conductors; forming a bonding dielectric on the first substrate and the first interconnect structure; bonding a second wafer on the first wafer, wherein the second wafer includes a second substrate, a second ILD layer on a second front surface of the second substrate, and a plurality of second conductors in the second ILD layer, wherein the second ILD layer is in contact with the bonding dielectric; forming a second interconnect structure penetrating through the second substrate and into the second ILD layer and contacting the second conductor and the first interconnect structure.

Abstract: A semiconductor device package includes a dielectric layer, a package body and a protection structure. The dielectric layer has a first surface, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The package body is disposed on the first surface of the dielectric layer. The package body covers a first portion of the lateral surface of the dielectric layer and exposes a second portion of the lateral surface of the dielectric layer. The protection structure is disposed on the second portion of the lateral surface of the dielectric layer.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the same. The semiconductor device includes a first die, a second die, a first redistribution layer, a second redistribution layer, a first interconnect structure, and a second interconnect structure. The second die is stacked on the first die, the first redistribution layer is disposed between a first substrate of the first die and a second ILD layer of the second die, and the second redistribution layer is disposed on a second substrate of the second die. The first interconnect structure connects the first redistribution layer to one of first metal lines of the first die, and the second interconnect structure connects the second redistribution layer to one of the second metal lines in the second ILD layer.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device. The method includes steps of providing a first wafer including a first substrate and a plurality of first conductors over the first substrate; forming a first interconnect structure penetrating through the first substrate and contacting one of the first conductors; forming a bonding dielectric on the first substrate and the first interconnect structure; bonding a second wafer on the first wafer, wherein the second wafer includes a second substrate, a second ILD layer on a second front surface of the second substrate, and a plurality of second conductors in the second ILD layer, wherein the second ILD layer is in contact with the bonding dielectric; forming a second interconnect structure penetrating through the second substrate and into the second ILD layer and contacting the second conductor and the first interconnect structure.

Abstract: The present disclosure relates to a multi-ring bonding pad, a semiconductor structure having the multi-ring bonding pad, and a method of manufacturing the semiconductor structure. The bonding pad includes an inner ring member, an outer ring member, and multiple bridge members. The inner ring member has a pair of first inner edges opposite to each other, a pair of second inner edges opposite to each other, and multiple third inner edges for connecting the first inner edges to the second inner edges. The outer ring member surrounds the inner ring member and has a pair of first outer edges opposite to each other, a pair of second outer edges opposite to each other, and multiple third outer edges for connecting the first outer edges to the second outer edges. The bridge members are disposed between the inner ring member and the outer ring member for connecting the inner ring member to the outer ring member.

Abstract: The present disclosure relates to a multi-ring bonding pad, a semiconductor structure having the multi-ring bonding pad, and a method of manufacturing the semiconductor structure. The bonding pad includes an inner ring member, an outer ring member, and multiple bridge members. The inner ring member has a pair of first inner edges opposite to each other, a pair of second inner edges opposite to each other, and multiple third inner edges for connecting the first inner edges to the second inner edges. The outer ring member surrounds the inner ring member and has a pair of first outer edges opposite to each other, a pair of second outer edges opposite to each other, and multiple third outer edges for connecting the first outer edges to the second outer edges. The bridge members are disposed between the inner ring member and the outer ring member for connecting the inner ring member to the outer ring member.

Abstract: A package structure and method for forming the same are provided. The package structure includes a first interconnect structure formed over a first substrate, and the first interconnect structure includes a first metal layer. The package structure further includes a second interconnect structure formed over a second substrate. The package structure includes a bonding structure between the first interconnect structure and the second interconnect structure. The bonding structure includes a first intermetallic compound (IMC) and a second intermetallic compound (IMC), a portion of the first IMC protrudes from the sidewall surfaces of the second IMC, and there could be a grain boundary between the first IMC and the second IMC.

Abstract: A flash includes a substrate comprising an active region and two electron storage structures disposed at two sides of the active region, wherein each of the electron storage structures comprises a silicon oxide/silicon nitride/silicon oxide composite layer. A buried gate is embedded in the active region, wherein the buried gate only consists of a control gate and a gate dielectric layer, and the gate dielectric layer is formed by a single material. Two source/drain doping regions are disposed in the active region at two sides of the buried gate.

Abstract: An antifuse structure includes an active area and a gate electrode over the active area. The active area includes a first body portion and a first extending portion extending in a first direction. The gate electrode includes a second body portion and a second extending portion extending in a second direction perpendicular to the first direction. The first body portion includes a first surface facing a portion of the second body portion, and the second body portion includes a second surface facing a portion of the first extending portion. The first extending portion and the second extending portion are partially overlapped in a third direction perpendicular to both the first direction and the second direction, with a dielectric layer sandwiched between the first and second extending portions, forming an intersection area.

Abstract: An antifuse structure includes an active area and a gate electrode over the active area. The active area includes a first body portion and a first extending portion extending in a first direction. The gate electrode includes a second body portion and a second extending portion extending in a second direction perpendicular to the first direction. The first body portion includes a first surface facing a portion of the second body portion, and the second body portion includes a second surface facing a portion of the first extending portion. The first extending portion and the second extending portion are partially overlapped in a third direction perpendicular to both the first direction and the second direction, with a dielectric layer sandwiched between the first and second extending portions, forming an intersection area.

Abstract: Two-terminal memory can be formed into a memory array that contains many discrete memory cells in a physical and a logical arrangement. Where each memory cell is isolated from surrounding circuitry by a single transistor, the resulting array is referred to as a 1T1R memory array. In contrast, where a group of memory cells are isolated from surrounding circuitry by a single transistor, the result is a 1TnR memory array. Because memory cells of a group are not isolated among themselves in the 1TnR case, bit disturb effects are theoretically possible when operating on a single memory cell. Read operations are disclosed for two-terminal memory devices configured to mitigate bit disturb effects, despite a lack of isolation transistors among memory cells of an array. Disclosed operations can facilitate reduced bit disturb effects even for high density two-terminal memory cell arrays.

Abstract: A method for forming a complementary metal oxide semiconductor device is disclosed. First, a substrate having a first device region and a second device region is provided. A first trench is formed in the first device region and filled with a first material. A second trench is formed in the second device region and filled with a second material. The first material and the second material comprise different stresses. After that, a first gate structure and a second gate structure are formed on the first material and the second material and completely covering the first trench and the second trench, respectively.

Abstract: According to an embodiment of the present invention, a method for fabricating semiconductor device includes the steps of: forming a semiconductor layer on a substrate; removing part of the semiconductor layer and part of the substrate to form a trench; forming a liner in the trench; removing part of the liner to form a spacer adjacent to two sides of the trench; and forming a bit line structure in the trench.

Abstract: A non-volatile programmable circuit configurable to perform logic functions, is provided. The programmable circuit can employ two-terminal non-volatile memory devices to store information, thereby mitigating or avoiding disturbance of programmed data in the absence of external power. Two-terminal resistive switching memory devices having high current on/off ratios and fast switching times can also be employed for high performance, and facilitating a high density array. For look-up table applications, input/output response times can be several nanoseconds or less, facilitating much faster response times than a memory array access for retrieving stored data.

Abstract: A substrate structure includes a dielectric layer, a first circuit layer, at least one conductive structure and a first protective layer. The first circuit layer is disposed adjacent to a first surface of the dielectric layer. The conductive structure includes a first portion and a second portion. The first portion is disposed on the first circuit layer. The first protective layer is disposed on the dielectric layer and contacts at least a portion of a sidewall of the first portion of the conductive structure. The first circuit layer and the conductive structure are integrally formed.

Abstract: A semiconductor substrate includes a dielectric layer, a heat dissipation structure and a first patterned conductive layer. The dielectric layer has a surface. The heat dissipation structure is surrounded by the dielectric layer. The heat dissipation structure defines a space and includes a liquid in the space. The first patterned conductive layer is disposed adjacent to the surface of the dielectric layer and thermally connected with the heat dissipation structure.

Abstract: A semiconductor substrate includes a dielectric layer, a first patterned conductive layer and a first connection element. The dielectric layer has a first surface. The first patterned conductive layer has a first surface and is disposed adjacent to the first surface of the dielectric layer. The first connection element is disposed on the first surface of the first patterned conductive layer. The first connection element includes a first portion, a second portion and a seed layer disposed between the first portion and the second portion. The first portion of the first connection element and the first patterned conductive layer are formed to be a monolithic structure.

Abstract: A method includes forming a plurality of first core features and one frame feature encircling the first core features. The first core features extend along a first direction and are arranged along a second direction perpendicular to the first direction, and each of the first core features is spaced apart from the frame feature by a first gap along the first direction. The method also includes forming a spacer layer filling the first gaps and forming a plurality of individual recesses entirely separated from each other. The method also includes forming a plurality of second core features in the individual recesses, wherein the second core features are entirely separated from each other and are spaced apart from the frame feature by the spacer layer. The method then removes the spacer layer to form a plurality of openings between the first core features, the second core features and the frame feature.

Abstract: A semiconductor substrate includes a dielectric layer, a heat dissipation structure and a first patterned conductive layer. The dielectric layer has a surface. The heat dissipation structure is surrounded by the dielectric layer. The heat dissipation structure defines a space and includes a liquid in the space. The first patterned conductive layer is disposed adjacent to the surface of the dielectric layer and thermally connected with the heat dissipation structure.