Patents by Inventor Lin Wang

Lin Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • INTERCONNECTION STRUCTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20180174962
    Abstract: An interconnection structure includes a first dielectric layer, a first conductor, an etch stop layer, and a second dielectric layer. The first conductor is partially in the first dielectric layer and having a portion protruding from the first dielectric layer. The etch stop layer is on the first dielectric layer and covering the protruding portion of the first conductor. The second dielectric layer is on the etch stop layer. A bottom surface of the second dielectric layer has a portion in a position lower than a top of the first conductor.
    Type: Application
    Filed: February 9, 2018
    Publication date: June 21, 2018
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Zhi-Sheng ZHENG, Chih-Lin WANG
  • MULTI-FUNCTION RULER
    Publication number: 20180172415
    Abstract: A multi-function ruler is provided with a rectangular, transparent body; at least one opening through a top and an underside of the body; and at least one row of a plurality of equally spaced markings printed along one side of the body. The at least one opening includes at least one directional sign, at least one curve, and at least one figure.
    Type: Application
    Filed: December 16, 2016
    Publication date: June 21, 2018
    Inventors: Chi-Ming Chu, Heng Chang, Yu-Lin Wang
  • BIPOLAR PLATE, FUEL CELL, AND FUEL CELL STACK
    Publication number: 20180166704
    Abstract: A bipolar plate, a fuel cell, and a fuel cell stack are provided. The bipolar plate includes a first flow-field plate and a second flow-field plate. The first flow-field plate and the second flow-field plate are stacked, and the edges of the first and second flow-field plates have a continuous welding portion to seal the periphery of the bipolar plate by a welding method.
    Type: Application
    Filed: March 1, 2017
    Publication date: June 14, 2018
    Applicant: Industrial Technology Research Institute
    Inventors: Chih-Chia Lin, Cheng-Hong Liu, Ching-Ying Huang, Wen-Lin Wang
  • Data transmission method, apparatus, and computer storage medium
    Patent number: 9998298
    Abstract: Disclosed is a data transmission method. When it is determined that a transmitting end device and a receiving end device both support a link binding capability, a binding group is established; when data is selected to be transmitted by a binding link in the binding group, the data to be transmitted is encapsulated according to a binding data format and is transmitted through the binding link; and when data is selected to be transmitted by a non-binding link, the data to be transmitted is encapsulated according to a common data format and is transmitted through the non-binding link. Also disclosed are a data transmission apparatus and a computer storage medium.
    Type: Grant
    Filed: April 16, 2014
    Date of Patent: June 12, 2018
    Assignee: ZTE CORPORATION
    Inventors: Qiongwen Liang, Lin Wang, Liquan Yuan, Weiliang Zhang, Junjian Zhang
  • CRYSTALLINE FORMS OF (3-AMINO-OXETAN-3-YLMETHYL)-[2-(5,5-DIOXO-5,6,7,9-TETRAHYDRO-5LAMBDA*6*-THIA-8-AZA-BENZOCYCLOHEPTEN-8-YL)-6-METHYL-QUINAZOLIN-4-YL]-AMINE
    Publication number: 20180155337
    Abstract: The present invention relates to novel crystalline forms of compound (I), (3-Amino-oxetan-3-ylmethyl)-[2-(5,5-dioxo-5,6,7,9-tetrahydro-5lambda*6*-thia-8-aza-benzocyclohepten-8-yl)-6-methyl-quinazolin-4-yl]-amine and pharmaceutical compositions comprising the crystalline forms thereof disclosed herein, which may be used for the treatment or prophylaxis of a viral disease in a patient relating to respiratory syncytial virus (RSV) infection or a disease caused by RSV infection.
    Type: Application
    Filed: January 12, 2018
    Publication date: June 7, 2018
    Applicant: Hoffmann-La Roche Inc.
    Inventors: Wei Zhang, Lin Wang, Wei Li
  • SEMICONDUCTOR DEVICE WITH CONTACT PLUG
    Publication number: 20180158727
    Abstract: The semiconductor device includes a substrate, an epi-layer, a first etch stop layer, an interlayer dielectric (ILD) layer, a second etch stop layer, a protective layer, a liner, a silicide cap and a contact plug. The substrate has a first portion and a second portion. The epi-layer is disposed in the first portion. The first etch stop layer is disposed on the second portion. The ILD layer is disposed on the first etch stop layer. The second etch stop layer is disposed on the ILD layer, in which the first etch stop layer, the ILD layer and the second etch stop layer form a sidewall surrounding the first portion. The protective layer is disposed on the sidewall. The liner is disposed on the protective layer. The silicide cap is disposed on the epi-layer. The contact plug is disposed on the silicide cap and surrounded by the liner.
    Type: Application
    Filed: February 5, 2018
    Publication date: June 7, 2018
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wen-Jia HSIEH, Long-Jie HONG, Chih-Lin WANG, Kang-Min KUO
  • ELECTRONIC APPARATUS AND ANTENNA SETTING METHOD FOR ELECTRONIC APPARATUS
    Publication number: 20180152214
    Abstract: The present invention discloses an electronic apparatus and an antenna setting method for electronic apparatus, wherein the electronic apparatus comprises a metal appearance surface; the metal appearance surface consists of a plurality of mutually separated metal pieces; an insulating piece is provided between the two adjacent metal pieces; each metal piece is provided thereon with one or more antennas, each antenna is connected with a communication module on a master chip of the electronic apparatus.
    Type: Application
    Filed: May 24, 2016
    Publication date: May 31, 2018
    Applicant: GOERTEK INC.
    Inventors: Peijie ZHAO, Degang ZHAO, Hongyi ZHANG, Lin WANG
  • Triboelectric nanogenerator
    Patent number: 9985554
    Abstract: A generator includes a first member, a second member and a sliding mechanism. The first member includes a first electrode and a first dielectric layer affixed to the first electrode. The first dielectric layer includes a first material that has a first rating on a triboelectric series. The second member includes a second material that has a second rating on the triboelectric series that is different from the first rating. The second member includes a second electrode. The second member is disposed adjacent to the first dielectric layer so that the first dielectric layer is disposed between the first electrode and the second electrode. The sliding mechanism is configured to cause relative lateral movement between the first member and the second member, thereby generating an electric potential imbalance between the first electrode and the second electrode.
    Type: Grant
    Filed: February 25, 2014
    Date of Patent: May 29, 2018
    Assignee: Georgia Tech Research Corporation
    Inventors: Zhong Lin Wang, Guang Zhu, Sihong Wang, Long Lin
  • SOLID STATE LIGHTING DEVICE AND LUMINAIRE
    Publication number: 20180142843
    Abstract: A lamp (10) for replacement of a HPS or HID lamp, is disclosed that comprises a support element (13) including a mounting shaft (15) extending therefrom, said mounting shaft being substantially parallel and having lateral displacement relative to a central axis of the lamp and a plurality of modules (20) each comprising a heat spreading element (23) wherein at least one module is mounted on the mounting shaft and is rotatable about the mounting shaft such that said at least one module can be pivoted between a first orientation in which the modules cooperate to define a closed structure; and a second orientation in which the at least one module is pivoted away from at least one neighboring module to define an opened structure.
    Type: Application
    Filed: April 22, 2016
    Publication date: May 24, 2018
    Inventors: Yan XIONG, Lin WANG, Chuan YUAN, Qianying DAI, Hao JIANG
  • Device management
    Patent number: 9980353
    Abstract: Proposed is a device management apparatus and method for use in a device management network including a remote device management system. The device management apparatus comprises a communication interface (6) adapted to receive device management commands of differing nature from the remote device management system and to transmit a feedback signal to said remote device management system if requested by said device management commands, wherein the differing nature of a device management command comprises a differing level of power required to process the device management command, wherein the differing level of power required to process the device management command further relates to whether or not the device management command requires the communication interface (6) to transmit the feedback signal.
    Type: Grant
    Filed: June 19, 2015
    Date of Patent: May 22, 2018
    Assignee: PHILIPS LIGHTING HOLDING B.V.
    Inventors: Qi Zhang, Lin Wang, Liwen Zhou
  • Compositions of adenosine deaminase-2 (ADA2), variants thereof and methods of using same
    Patent number: 9969998
    Abstract: Provided are variant adenosine deaminase 2 (ADA2) proteins, conjugates thereof and compositions containing the proteins and/or conjugates. Also provided are methods and uses of the ADA2 proteins or conjugates for treating diseases and conditions, such as a tumor or cancer, and in particular any disease or condition associated with elevated adenosine or other associated marker.
    Type: Grant
    Filed: April 8, 2016
    Date of Patent: May 15, 2018
    Assignee: Halozyme, Inc.
    Inventors: Christopher D. Thanos, Lin Wang, H. Michael Shepard
  • Semiconductor device and method of forming the same
    Patent number: 9972678
    Abstract: A method of forming a semiconductor device is provided including the following steps. A substrate having a first voltage area and a second voltage area is provided. A first oxide layer is formed in the first voltage area. The first oxide layer is removed to form a recess in the first voltage area. A shallow trench isolation (STI) structure is formed in the substrate, wherein a first portion of the STI structure is located in the first voltage area and a second portion of the STI structure is located in the second voltage area, a top surface of the STI structure is higher than the top surface of the substrate, and a bottom surface of the first portion of the STI structure in the first voltage area is lower than a bottom surface of the second portion of the STI structure in the second voltage area.
    Type: Grant
    Filed: October 6, 2016
    Date of Patent: May 15, 2018
    Assignee: United Microelectronics Corp.
    Inventors: Chang-Po Hsiung, Ping-Hung Chiang, Shih-Chieh Pu, Chia-Lin Wang, Nien-Chung Li, Wen-Fang Lee, Shih-Yin Hsiao, Chih-Chung Wang
  • Mechanical energy-to-electricity transformer using kinetic energy of a hydraulic machine
    Patent number: 9966808
    Abstract: A mechanical energy-to-electricity transformer using kinetic energy of a hydraulic machine is provided, including: a power unit, for connecting to the hydraulic machine; a generator, including a rotor, a stator and an output electrode set, the rotor connected to the power unit and twelve magnetic members, the rotor being rotated with a rotational speed lower than or equal to 600 rpm, N pole and S pole of the magnetic members circumferentially alternatively arranged, the stator having thirty-six ditches axially, between every adjacent two ditches forming a tooth, the ditches, teeth, coil units magnetic members defining winding sets circumferentially arranged in intervals by 120 degrees to form a three-phase AC structure electrically connected with the output terminal, the three-phase AC structure being rotatable relative to the magnetic members to generate AC power of 60 Hz and 220 V.
    Type: Grant
    Filed: January 21, 2016
    Date of Patent: May 8, 2018
    Inventor: Yao-Lin Wang
  • Semiconductor structure with insertion layer and method for manufacturing the same
    Patent number: 9960246
    Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate, an interfacial layer formed over the substrate, and an insertion layer formed over the interfacial layer. The semiconductor structure further includes a gate dielectric layer formed over the insertion layer and a gate structure formed over the gate dielectric layer. The insertion layer and the gate dielectric layer may be metal oxides where the insertion layer has an oxygen coordination number greater than the gate dielectric layer.
    Type: Grant
    Filed: December 5, 2016
    Date of Patent: May 1, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng-Wei Lian, Chih-Lin Wang, Kang-Min Kuo, Chih-Wei Lin
  • METHOD FOR PRODUCING CASTINGS, CASTING APPARATUS, AND GAS-BLOWING NOZZLE USED IN CASTING APPARATUS
    Publication number: 20180111188
    Abstract: A method for producing a casting by pouring a metal melt by gravity into a gas-permeable casting mold having a cavity comprising at least a sprue, a runner and a product-forming cavity, comprises pouring a metal melt into a desired cavity portion including the product-forming cavity through the sprue, the melt being in a volume smaller than the volume of an entire cavity of the gas-permeable casting mold and substantially equal to the volume of the desired cavity portion; supplying a gas to the desired cavity portion through the sprue before the desired cavity portion is filled with the poured melt, so that the melt fills the desired cavity portion and solidifies; the gas being supplied from a gas-blowing nozzle fit into the sprue.
    Type: Application
    Filed: December 19, 2017
    Publication date: April 26, 2018
    Applicant: HITACHI METALS, LTD.
    Inventors: Hiroyuki WATANABE, Toru IWANAGA, Lin WANG
  • Thermal pile sensing structure integrated with capacitor
    Patent number: 9945726
    Abstract: The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. A hot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor.
    Type: Grant
    Filed: August 26, 2016
    Date of Patent: April 17, 2018
    Assignee: PIXART IMAGING INCORPORATION
    Inventors: Ming-Han Tsai, Shin-Lin Wang
  • SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
    Publication number: 20180102408
    Abstract: A method of forming a semiconductor device is provided including the following steps. A substrate having a first voltage area and a second voltage area is provided. A first oxide layer is formed in the first voltage area. The first oxide layer is removed to form a recess in the first voltage area. A shallow trench isolation (STI) structure is formed in the substrate, wherein a first portion of the STI structure is located in the first voltage area and a second portion of the STI structure is located in the second voltage area, a top surface of the STI structure is higher than the top surface of the substrate, and a bottom surface of the first portion of the STI structure in the first voltage area is lower than a bottom surface of the second portion of the STI structure in the second voltage area.
    Type: Application
    Filed: October 6, 2016
    Publication date: April 12, 2018
    Applicant: United Microelectronics Corp.
    Inventors: Chang-Po Hsiung, Ping-Hung Chiang, Shih-Chieh Pu, Chia-Lin Wang, Nien-Chung Li, Wen-Fang Lee, Shih-Yin Hsiao, Chih-Chung Wang
  • Mechanism for forming metal gate structure
    Patent number: 9941152
    Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a metal gate stack formed over the semiconductor substrate. The semiconductor device also includes an insulating layer formed over the semiconductor substrate and surrounding the metal gate stack, wherein the metal gate stack includes a metal gate electrode. The semiconductor device further includes a metal oxide structure formed over the insulating layer and in direct contact with the insulating layer. The metal oxide structure includes an oxidized material of the metal gate electrode.
    Type: Grant
    Filed: February 6, 2017
    Date of Patent: April 10, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wen-Jia Hsieh, Chih-Lin Wang, Chia-Der Chang
  • Double push reset controller
    Patent number: D818972
    Type: Grant
    Filed: April 14, 2017
    Date of Patent: May 29, 2018
    Assignee: eMoMo Technology Co., Ltd.
    Inventors: Wenji Tang, Ming Kong, Zhigang Wang, Xiaolian Zhou, Wei Zhou, Yulong Zhang, Xibo Mo, Lin Wang
  • Caddy
    Patent number: D819972
    Type: Grant
    Filed: September 13, 2016
    Date of Patent: June 12, 2018
    Assignee: 3M INNOVATIVE PROPERTIES COMPANY
    Inventors: Pei-Chun Chang, Hui-Lin Wang, Ho Hsin Kun