Abstract: Disclosed herein relates to a self-checkout anti-theft vehicle system, comprising: a self-checkout vehicle having a plurality of sensors and components implemented thereon, the self-checkout vehicle being used by shoppers for storing selected merchandises in a retail environment; and a centralized computing device. The centralized computing device is configured to: obtain information related to each merchandise selected and placed into the self-checkout vehicle by a shopper by exchanging data with the plurality of sensors and components via a first communication network, identify each merchandise via a second, different communication network based at least upon the information obtained from the plurality of sensors and components, and process payment information of each merchandise.

Abstract: Embodiments of the present application provide an image enhancement method, a chip, and an image acquisition device. The method comprises: storing, by a main processor, a preset number of Raw image frames to be processed currently acquired from a sensor in a first off-chip memory, into the on-chip memory; performing, by a first neural network processor, image fusion on a preset number of Raw image frames to be fused currently obtained based on the preset number of Raw image frames to be processed currently in the on-chip memory based on a preset image fusion network, to obtain a fused Raw image frame, and storing it into the on-chip memory; sending, by the main processor to an ISP chip, a target Raw image frame to be sent currently obtained based on the fused Raw image frame in the on-chip memory.

Abstract: A semiconductor processing method includes: selecting a target state of a reticle based on a given data set, wherein the given data set comprises temperature profiles of the reticle correlated to a target overlay performance, and the target state is a state in which a deformation of the reticle is substantially unchanged; regulating the reticle to reach the target state; and performing an exposure process on a target workpiece by using the reticle.

Abstract: A staggered and crossed heat storage adsorption bed and a seawater desalination waste heat storage system are provided, which relate to the field of seawater desalination and the technical field of thermochemical adsorption heat storage. The adsorption bed includes a bed body, wherein an adsorption cavity is arranged in the bed body; two sides of the adsorption cavity are respectively communicated with an inlet cavity and an outlet cavity; the adsorption cavity includes a vacuum heat insulation layer arranged at an outermost side; the vacuum heat insulation layer is embedded with an adsorption box fixing layer; a corner end adsorption box, a central adsorption box and a side adsorption box are staggered and crossed arranged in an inner cavity of the vacuum heat insulation layer through the adsorption box fixing layer.

Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Abstract: An optical fiber sensing system for temperature and salinity synchronous measurement is provided, which includes a broad-spectrum light source, an optical fiber circulator, a coupler, a first interferometer, a second interferometer, a third interferometer and a spectrometer; the first interferometer is insensitive to temperature and salinity; the second interferometer is sensitive to both temperature and salinity, and the third interferometer is only sensitive to temperature; light emitted by the broad-spectrum light source passes through the optical fiber circulator and enters the first interferometer; reflected light of the first interferometer passes through the optical fiber circulator and the coupler sequentially, and then enters the second and the third interferometers respectively; the reflected light of the second and the third interferometers enters the spectrometer after passing through the coupler; the temperature and the salinity to be measured are simultaneously obtained by performing spectral an

Abstract: A bonding structure that may be used to form 3D-IC devices is formed using first oblong bonding pads on a first substrate and second oblong bonding pads one a second substrate. The first and second oblong bonding pads are laid crosswise, and the bond is formed. Viewed in a first cross-section, the first bonding pad is wider than the second bonding pad. Viewed in a second cross-section at a right angle to the first, the second bonding pad is wider than the first bonding pad. Making the bonding pads oblong and angling them relative to one another reduces variations in bonding area due to shifts in alignment between the first substrate and the second substrate. The oblong shape in a suitable orientation may also be used to reduce capacitive coupling between one of the bonding pads and nearby wires.

Abstract: Disclosed are a conductive film and a test component. A conductive film includes a supporting layer, a circuit layer and a protective layer. The supporting layer has a first surface and a second surface opposite to the first surface. The supporting layer supports the circuit layer. The circuit layer includes a first protruding part, a second protruding part and a connecting part. The first protruding part is disposed on the first surface. The second protruding part is disposed on the second surface. The connecting part is disposed between the first protruding part and the second protruding part. The first protruding part is connected to the second protruding part through the connecting part. The protective layer covers the first protruding part. The conductive film and the test component of the disclosed embodiments may have a buffering effect or increase the service life.

Abstract: A communication receiver includes a first signal processing circuit and a second signal processing circuit. The first signal processing circuit includes a first feedforward equalizer and a decision circuit. The first feedforward equalizer processes a received signal to generate a first equalized signal. The decision circuit performs hard decision upon the first equalized signal to generate a first symbol decision signal. The second signal processing circuit includes a second feedforward equalizer, a decision feedforward equalizer, and a first decision feedback equalizer. The second feedforward equalizer processes the first equalized signal to generate a second equalized signal. The decision feedforward equalizer processes the first symbol decision signal to generate a third equalized signal. The first decision feedback equalizer generates a second symbol decision signal according to the second equalized signal and the third equalized signal.

Abstract: A light-emitting element includes a pair of electrodes, a first light-emitting unit, a second light-emitting unit, and a charge generation layer. The first light-emitting unit, between the pair of electrodes, and the first light-emitting unit, includes a first light-emitting layer. The second light-emitting unit, between the pair of electrodes, includes a second light-emitting layer. A first luminescent layer includes a first main body material, a second main body material, a first guest material, and a first auxiliary material, and the first main body material forms a first excimer complex with the second main body material. A first excited triplet state energy level of the first auxiliary material is lower than a first excited triplet state energy level of the first excimer complex, and the first excited triplet state energy level of the first auxiliary material is higher than that of the first guest material.

Abstract: The present disclosure provides a method and a device used in a User Equipment (UE) and a base station for wireless communications. The UE receives a first signaling; and transmits a first radio signal; wherein the first signaling comprises scheduling information of the first radio signal; the first signaling is used to determine a first index, and the first index is used to determine a transmitting antenna port of the first radio signal; transmit power of the first radio signal is first power, and a linear value of the first power is equal to a product of a linear value of second power and a first coefficient; the first coefficient is one of K candidate coefficients. The above method optimizes Uplink transmit power according to the UE's own capabilities.

Abstract: The present disclosure provides a fiber laser light coherent combination system, comprising: a modulator module configured to perform a phase modulation on sub-beams according to pseudo-random sequences orthogonally independent from each other, and perform a frequency shift on a reference beam according to a set frequency; a fiber laser light amplifier module configured to perform a power amplification on the modulated sub-beams; a laser light collimation emission module configured to collimate and output the sub-beams and the reference beam; a combination sampling module configured to perform a combination of the sub-beams and the reference beam which are collimated and outputted, and convert them into an electrical signal; a digital phase modulation and demodulation module configured to perform a demodulation on the electrical signal according to the shifted frequency and each of the pseudo-random sequences, and obtain a phase difference between each of the sub-beams and the reference beam.

Abstract: The present application provides a semiconductor device and the method of making the same. The method includes recessing a fin extending from a substrate, forming a base epitaxial feature on the recessed fin, forming a bar-like epitaxial feature on the base epitaxial feature, and forming a conformal epitaxial feature on the bar-like epitaxial feature. The forming of the bar-like epitaxial feature includes in-situ doping the bar-like epitaxial feature with an n-type dopant at a first doping concentration. The forming of the conformal epitaxial feature includes in-situ doping the conformal epitaxial feature with a second doping concentration greater than the first doping concentration.

Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive ring-like structure over and electrically insulated from the chip. The conductive ring-like structure surrounds a central region of the chip. The chip package structure includes a first solder structure over the conductive ring-like structure. The first solder structure and the conductive ring-like structure are made of different materials.

Abstract: This disclosure provides systems, methods, apparatus, and computer programs encoded on computer storage media, for relative timing drift correction for distributed multi-user transmissions. In one aspect, a first access point (AP) may receive a first signal from a second AP. The first signal may be associated with a channel sounding procedure to be performed substantially simultaneously by the second AP and the first AP. The first AP may then receive a second signal from the second AP, and prior to a substantially simultaneous transmission by the second AP and the first AP. The second signal may include timing information relative to the first signal. The first AP may determine a start time of the substantially simultaneous transmission at the first AP based on the timing information, and may initiate the substantially simultaneous transmission according to the determined start time.

Abstract: The invention uses the control circuit formed on the silicon wafer to detect the leakage current of transistor formed on the depletion mode GaN wafer and then adjust the gate voltage of the depletion mode GaN transistor according to the detected leakage current. Essentially, the gate voltage is reduced or viewed as made more negative when the detected leakage current is larger a specific value. Thus, the gate voltage can be gradually adjusted to approach a specific threshold voltage that right block the leakage current. In other words, by making the gate voltage more negative when non-zero leakage current is detected and even by making the gate voltage more positive when zero leakage current is detected, the depletion mode GaN transistor can be adjusted to have an acceptable or even zero leakage current, a high reaction rate and an optimized efficiency.

Abstract: A light-emitting device includes: a semiconductor stack, including a first semiconductor layer, an active region and a second semiconductor layer; a first contact electrode and a second contact electrode formed on the semiconductor stack, wherein the first contact electrode includes a first contact part formed on the first semiconductor layer and the second contact electrode includes a second contact part formed on the second semiconductor layer; an insulating stack formed on the semiconductor stack, including an opening on the second contact part; a first electrode pad and a second electrode pad formed on the insulating stack, wherein the second electrode pad filled in the opening and connecting the second contact part; wherein the second electrode pad includes an upper surface, and the upper surface includes a platform area and a depression area on the second contact part; wherein the platform area has a maximum height relative to other areas of the upper surface; wherein an area of a projection of the plat

Abstract: A multi-projector system and a method of calibrating the multi-projector system are provided. The method includes: controlling a first projector to project a first image, and capturing and generating a first captured image including the first image to obtain a first color value from the first captured image through an image capturing device; projecting a second image according to a first projection parameter, and capturing and generating a second captured image including the second image to obtain a second color value from the second captured image through the image capturing device, wherein the first projection parameter includes an electrical parameter of a light source module of the second projector; calculating an absolute difference between the first color value and the second color value; and adjusting the first projection parameter to update the absolute difference in response to the absolute difference being greater than a first threshold.

Abstract: An electronic device including an electronic unit and a redistribution layer is disclosed. The electronic unit has connection pads. The redistribution layer is electrically connected to the electronic unit and includes a first insulating layer, a first metal layer and a second insulating layer. The first insulating layer is disposed on the electronic unit and has first openings disposed corresponding to the connection pads. The first metal layer is disposed on the first insulating layer and electrically connected to the electronic unit through the connection pads. The second insulating layer is disposed on the first metal layer. The first insulating layer includes first filler particles, and the second insulating layer includes second filler particles. The first filler particles have a first maximum particle size, the second filler particles have a second maximum particle size, and the second maximum particle size is greater than the first maximum particle size.

Abstract: The present disclosure provides a multi-factor quantitative analysis method for deformation of a neighborhood tunnel. The method includes the following steps: analyzing monitoring data generated at a tunnel site; simulating collapse occurring at a shallow buried section of a tunnel; determining the degree of influence of each factor on the tunnel and a stratum; and determining quantitative influence of each factor on tunnel deformation. The present disclosure can not only provide an accurate theoretical basis for the construction of the shallow buried section of the small-distance tunnel, but also guarantee safety and cost saving during tunnel construction.