Abstract: A light-emitting element includes a supportive substrate; a reflective layer formed on the supportive substrate; a transparent layer formed on the reflective layer; a light-emitting stacked layer formed on the transparent layer; an etching-stop layer formed between the transparent layer and the reflective layer; and a plurality of contact parts formed between the light-emitting stacked layer and the transparent layer.

Abstract: An embodiment of the present application discloses a light-emitting structure, comprising a first unit; a second unit; a trench formed between the first unit and the second unit, and having a less steep sidewall and a steeper sidewall steeper than the less steep sidewall; and an electrical connection arranged on the less steep sidewall.

Abstract: A light-emitting element includes: a substrate including a first surface and a second surface different from the first surface; a plurality of light-emitting structure units disposed on the second surface; and a trench formed on the first surface and between the plurality of light-emitting structure units.

Abstract: A light-emitting device includes: a carrier; a light-emitting structure formed on the carrier, wherein the light-emitting structure has a first surface facing the carrier, a second surface opposite to the first surface, and an active layer between the first surface and the second surface; a plurality of first trenches extended from the first surface and passing through the active layer so a plurality of light-emitting units is defined; and a plurality of second trenches extended from the second surface and passing through the active layer of each of the plurality of light-emitting units.

Abstract: A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.

Abstract: The present invention discloses a liquid crystal lens and a manufacturing method thereof. At least one first electrode is disposed on a first substrate, a first alignment layer is disposed on the first electrode, a liquid crystal layer is disposed on the first alignment layer, a second alignment layer is disposed on the liquid crystal layer, an electric field uniformization layer is disposed on the second alignment layer, at least one second electrode and at least one third electrode are disposed on the electric field uniformization layer, and the second electrode is arranged around the third electrode. A second substrate is disposed on the second electrode and the third electrode. The third electrode which matches up with the second electrode produces an electric field gradient and the liquid crystal layer is affected uniformly by the electric field uniformization layer so as to achieve rapid focus purpose by the liquid crystal.

Abstract: This application provides a semiconductor light-emitting device and the manufacturing method thereof. The semiconductor light-emitting device comprises a semiconductor light-emitting structure and a thinned substrate. The semiconductor light-emitting structure comprises a plurality of semiconductor layers and a plurality of first channels, wherein a plurality of first channels has a predetermined depth that penetrating at least two layers of the plurality of semiconductor layers.

Abstract: An exemplary semiconductor device is provided. The semiconductor device includes a semiconductor stacked layer and a conductive structure. The conductive structure is located on the semiconductor stacked layer. The conductive structure includes a bottom portion and a top portion on opposite sides thereof. The bottom portion is in contact with the semiconductor stacked layer. A ratio of a top width of the top portion to a bottom width of the bottom portion is less than 0.7. The conductive structure can be a conductive dot structure or a conductive line structure.

Abstract: A card edge connector includes an elongated housing and a number of contacts retained in the housing. Each contact has a retaining portion retained in the housing, a contact portion forwardly extending from a front end of the retaining portion and a connecting portion backwardly extending from a rear end of the retaining portion. The contacts are arranged in two rows and formed with a first receiving space between two rows of contact portions to receive a module and a second receiving space between two rows of connecting portions to receive a mother board. The first receiving space defines a first center line along an insertion direction of the module. The second receiving space defines a second center line which is parallel to the first center line and offset to the first center line along an up to down direction perpendicular to the insertion direction.

Abstract: A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.

Abstract: A light-emitting device includes a substrate; a first semiconductor layer formed on the substrate; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer includes a plurality of voids between the active layer and the first pad.

Abstract: An exemplary semiconductor device is provided. The semiconductor device includes a semiconductor stacked layer and a conductive structure. The conductive structure is located on the semiconductor stacked layer. The conductive structure includes a bottom portion and a top portion on opposite sides thereof. The bottom portion is in contact with the semiconductor stacked layer. A ratio of a top width of the top portion to a bottom width of the bottom portion is less than 0.7. The conductive structure can be a conductive dot structure or a conductive line structure.

Abstract: A card edge connector for mating with an electronic card includes an elongated housing, a number of contacts and a retainer retained to the housing. The housing has a pair of side walls, a central slot between the side walls and a first tower upwardly extending at one end thereof. The first tower defines a first U-shaped cavity downwardly extending from a top end thereof and a mounting slot upwardly extending from a lower end thereof and located at outside of the first cavity. The first cavity communicates with the central slot along a length direction of the housing to receive the electronic card. The retainer has a non-flexible fastening portion retained in the mounting slot and a flexible locking barb obliquely protruding into the first cavity from a top end of the fastening portion to lock with the electronic card.

Abstract: An HDMI (High Definition Multimedia Interface) connector includes an insulating housing which has a receiving cavity and an inserting mouth. A connecting body is formed between the receiving cavity and the inserting mouth and defines two rows of passing holes. An insulating body is secured in the receiving cavity and includes a first insulating body and a second insulating body engaged with the first insulating body. A plurality of first signal terminals and a plurality of second signal terminals each have a fastening portion, a contacting portion and a flexible portion. The first signal terminals are integrated with the first insulating body by means of insert molding the corresponding fastening portions in the first insulating body and the second signal terminals are integrated with the second insulating body by means of insert molding the corresponding fastening portions in the second insulating body. The flexible portions are elastically received in the corresponding passing holes.

Abstract: A card edge connector includes a longitudinal insulative housing having a receiving slot formed therein and extending in a longitudinal direction for insertion of a module; a set of contacts retained in the insulative housing and protruding into the receiving slot for mating with the module; an ejector rotatably attached to one longitudinal end of the insulative housing for latching with or ejecting the module; and a spring member retained in the other longitudinal end of the insulative housing and having a pair of resilient locking arms for locking with the module.

Abstract: A card edge connector (100) includes an insulative housing (1) having a pair of opposed side walls (11), a end wall (12) connected to the side walls (11), a retainer (15) and a reinforcement wall (16) both of which protruding outwardly from the end wall (12) in a lengthwise direction of the housing (1); a plurality of terminals (2) received in the housing (1); and a metal hook (3) retained on the reinforcement wall (16) along an upper-to-lower direction of the housing (1), and having a soldering tail (32) extending beyond the housing (1) for being mounted to a mother board. The retainer (15) is connected to the reinforcement wall (16) and defines a latch projection (153) extending from an inner surface for latching a daughter board.

Abstract: The present application discloses a semiconductor light-emitting device with a protection layer. The structure includes a heat dispersion substrate, a first connecting layer on the heat dispersion substrate, a protection layer on the first connecting layer, a second connecting layer on the protection layer, and a light-emitting unit on the second connecting layer. The protection layer is highly insulative and can avoid the current leakage forming between the light-emitting unit and the heat dispersion substrate.

Abstract: A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.

Abstract: A card edge connector includes a longitudinal insulative housing having a receiving slot formed therein and extending in a longitudinal direction for insertion of a module; a set of contacts retained in the insulative housing and protruding into the receiving slot for mating with the module; an ejector rotatably attached to one longitudinal end of the insulative housing for latching with or ejecting the module; and a spring member retained in the other longitudinal end of the insulative housing and having a pair of resilient locking arms for locking with the module.